BSS84PWH6327XTSA1 P-Channel 60V 150mA (Ta) 300mW (Ta) Surface Mount PG-SOT323-3
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335 In Stock
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All prices are in EUR.
Price Break Unit Price Extended Price
1 0,35000 €0,35
10 0,28700 €2,87
25 0,23960 €5,99
100 0,15180 €15,18
500 0,09986 €49,93
1.000 0,06790 €67,90

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Unit Price
€0,35000

Excludes VAT

€0,41650

Includes VAT

Alternate Package

BSS84PWH6327XTSA1

Datasheet
Digi-Key Part Number BSS84PWH6327XTSA1CT-ND
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Manufacturer

Infineon Technologies

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Manufacturer Part Number BSS84PWH6327XTSA1
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Description MOSFET P-CH 60V 150MA SOT323-3
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Manufacturer Standard Lead Time 34 Weeks
Detailed Description

P-Channel 60V 150mA (Ta) 300mW (Ta) Surface Mount PG-SOT323-3

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Customer Reference
Documents & Media
Datasheets BSS84PW
Other Related Documents Part Number Guide
Featured Product Data Processing Systems
PCN Assembly/Origin Lead Plate Supplier Add 26/Apr/2017
PCN Packaging Reel Cover Tape Chg 16/Feb/2016
HTML Datasheet BSS84PW
Simulation Models OptiMOS™ Power MOSFET 60V P-Channel Spice Model
Product Attributes
Type Description Select All
Categories
Manufacturer Infineon Technologies
Series SIPMOS®
Packaging Cut Tape (CT) 
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 150mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 8Ohm @ 150mA, 10V
Vgs(th) (Max) @ Id 2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs 1,5nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 19,1pF @ 25V
FET Feature -
Power Dissipation (Max) 300mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-SOT323-3
Package / Case SC-70, SOT-323
Base Part Number BSS84
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names BSS84PWH6327XTSA1CT