G2R120MT33J N-Channel 3300V 35A Surface Mount TO-263-7
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143 In Stock
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Price Break Unit Price Extended Price
1 81,08000 €81,08
10 79,04300 €790,43

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Unit Price
€81,08000

Excludes VAT

€96,48521

Includes VAT

G2R120MT33J

Datasheet
Digi-Key Part Number 1242-G2R120MT33J-ND
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Manufacturer

GeneSiC Semiconductor

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Manufacturer Part Number G2R120MT33J
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Description SIC MOSFET N-CH TO263-7
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Manufacturer Standard Lead Time 20 Weeks
Detailed Description

N-Channel 3300V 35A Surface Mount TO-263-7

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Customer Reference
Documents & Media
Datasheets SiC MOSFETs Selector Guide
EDA / CAD Models G2R120MT33J by Ultra Librarian
Product Attributes
Type Description Select All
Categories
Manufacturer GeneSiC Semiconductor
Series G2R™
Packaging Tube 
Part Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 3300V
Current - Continuous Drain (Id) @ 25°C 35A
Drive Voltage (Max Rds On, Min Rds On) 20V
Rds On (Max) @ Id, Vgs 156mOhm @ 20A, 20V
Vgs(th) (Max) @ Id -
Gate Charge (Qg) (Max) @ Vgs 145nC @ 20V
Vgs (Max) +25V, -10V
Input Capacitance (Ciss) (Max) @ Vds 3706pF @ 1000V
FET Feature -
Power Dissipation (Max) -
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263-7
Package / Case TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Base Part Number G2R120
 
Environmental & Export Classifications
RoHS Status RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
California Prop 65
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Additional Resources
Standard Package 50
Other Names 1242-G2R120MT33J