G2R1000MT33J N-Channel 3300V 4A (Tc) 74W (Tc) Surface Mount TO-263-7
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1.422 In Stock
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Price Break Unit Price Extended Price
1 14,15000 €14,15
10 12,44500 €124,45
25 11,93480 €298,37

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Unit Price
€14,15000

Excludes VAT

€16,83850

Includes VAT

G2R1000MT33J

Datasheet
Digi-Key Part Number 1242-G2R1000MT33J-ND
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Manufacturer

GeneSiC Semiconductor

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Manufacturer Part Number G2R1000MT33J
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Description SIC MOSFET N-CH 4A TO263-7
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Manufacturer Standard Lead Time 20 Weeks
Detailed Description

N-Channel 3300V 4A (Tc) 74W (Tc) Surface Mount TO-263-7

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Customer Reference
Documents & Media
Datasheets G2R1000MT33J
EDA / CAD Models G2R1000MT33J by Ultra Librarian
Product Attributes
Type Description Select All
Categories
Manufacturer GeneSiC Semiconductor
Series G2R™
Packaging Tube 
Part Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 3300V
Current - Continuous Drain (Id) @ 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V
Rds On (Max) @ Id, Vgs 1.2Ohm @ 2A, 20V
Vgs(th) (Max) @ Id 3.5V @ 2mA
Gate Charge (Qg) (Max) @ Vgs 21nC @ 20V
Vgs (Max) +20V, -5V
Input Capacitance (Ciss) (Max) @ Vds 238pF @ 1000V
FET Feature -
Power Dissipation (Max) 74W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263-7
Package / Case TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Base Part Number G2R1000
 
Environmental & Export Classifications
RoHS Status RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
California Prop 65
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Additional Resources
Standard Package 50
Other Names 1242-G2R1000MT33J