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SQ2337 Vishay Siliconix - Transistors - FETs, MOSFETs - Single

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Compare Parts Datasheets Image Digi-Key Part Number Manufacturer Part Number Manufacturer Description Quantity Available
Unit Price
EUR
Minimum Quantity Packaging Series Part Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Mounting Type Supplier Device Package Package / Case
   
SQ2337ES-T1_GE3 Datasheet SQ2337ES-T1_GE3 - Vishay Siliconix SQ2337ES-T1_GE3TR-ND SQ2337ES-T1_GE3 MOSFET P-CHAN 80V SOT23 15.000 - Immediate Available: 15.000 0,18865 € 3.000 Minimum: 3.000 Tape & Reel (TR)
Alternate Packaging
Automotive, AEC-Q101, TrenchFET® Active P-Channel MOSFET (Metal Oxide) 80V 2.2A (Tc) 6V, 10V 290mOhm @ 1A, 4.5V 2.5V @ 250µA 18nC @ 10V ±20V 620pF @ 30V
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3W (Tc) -55°C ~ 175°C (TJ) Surface Mount SOT-23-3 (TO-236) TO-236-3, SC-59, SOT-23-3
SQ2337ES-T1_GE3 Datasheet SQ2337ES-T1_GE3 - Vishay Siliconix SQ2337ES-T1_GE3CT-ND SQ2337ES-T1_GE3 MOSFET P-CHAN 80V SOT23 16.407 - Immediate Available: 16.407 0,53000 € 1 Minimum: 1 Cut Tape (CT)
Alternate Packaging
Automotive, AEC-Q101, TrenchFET® Active P-Channel MOSFET (Metal Oxide) 80V 2.2A (Tc) 6V, 10V 290mOhm @ 1A, 4.5V 2.5V @ 250µA 18nC @ 10V ±20V 620pF @ 30V
-
3W (Tc) -55°C ~ 175°C (TJ) Surface Mount SOT-23-3 (TO-236) TO-236-3, SC-59, SOT-23-3
SQ2337ES-T1_GE3 Datasheet SQ2337ES-T1_GE3 - Vishay Siliconix SQ2337ES-T1_GE3DKR-ND SQ2337ES-T1_GE3 MOSFET P-CHAN 80V SOT23 16.407 - Immediate Available: 16.407 Digi-Reel® 1 Minimum: 1 Digi-Reel®
Alternate Packaging
Automotive, AEC-Q101, TrenchFET® Active P-Channel MOSFET (Metal Oxide) 80V 2.2A (Tc) 6V, 10V 290mOhm @ 1A, 4.5V 2.5V @ 250µA 18nC @ 10V ±20V 620pF @ 30V
-
3W (Tc) -55°C ~ 175°C (TJ) Surface Mount SOT-23-3 (TO-236) TO-236-3, SC-59, SOT-23-3
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12:45:19 11.23.2020