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SI2399 Vishay Siliconix - Transistors - FETs, MOSFETs - Single

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Compare Parts Datasheets Image Digi-Key Part Number Manufacturer Part Number Manufacturer Description Quantity Available
Unit Price
EUR
Minimum Quantity Packaging Series Part Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Mounting Type Supplier Device Package Package / Case
   
SI2399DS-T1-GE3 Datasheet SI2399DS-T1-GE3 - Vishay Siliconix SI2399DS-T1-GE3TR-ND SI2399DS-T1-GE3 MOSFET P-CH 20V 6A SOT23-3 42.000 - Immediate Available: 42.000 0,14022 € 3.000 Minimum: 3.000 Tape & Reel (TR)
Alternate Packaging
TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20V 6A (Tc) 2.5V, 10V 34mOhm @ 5.1A, 10V 1.5V @ 250µA 20nC @ 4,5V ±12V 835pF @ 10V
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2.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount SOT-23-3 (TO-236) TO-236-3, SC-59, SOT-23-3
SI2399DS-T1-GE3 Datasheet SI2399DS-T1-GE3 - Vishay Siliconix SI2399DS-T1-GE3CT-ND SI2399DS-T1-GE3 MOSFET P-CH 20V 6A SOT23-3 44.433 - Immediate Available: 44.433 0,42000 € 1 Minimum: 1 Cut Tape (CT)
Alternate Packaging
TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20V 6A (Tc) 2.5V, 10V 34mOhm @ 5.1A, 10V 1.5V @ 250µA 20nC @ 4,5V ±12V 835pF @ 10V
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2.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount SOT-23-3 (TO-236) TO-236-3, SC-59, SOT-23-3
SI2399DS-T1-GE3 Datasheet SI2399DS-T1-GE3 - Vishay Siliconix SI2399DS-T1-GE3DKR-ND SI2399DS-T1-GE3 MOSFET P-CH 20V 6A SOT23-3 44.433 - Immediate Available: 44.433 Digi-Reel® 1 Minimum: 1 Digi-Reel®
Alternate Packaging
TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20V 6A (Tc) 2.5V, 10V 34mOhm @ 5.1A, 10V 1.5V @ 250µA 20nC @ 4,5V ±12V 835pF @ 10V
-
2.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount SOT-23-3 (TO-236) TO-236-3, SC-59, SOT-23-3
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02:25:30 1.21.2021