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SI2342 Vishay Siliconix - Transistors - FETs, MOSFETs - Single

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Compare Parts Datasheets Image Digi-Key Part Number Manufacturer Part Number Manufacturer Description Quantity Available
Unit Price
EUR
Minimum Quantity Packaging Series Part Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Mounting Type Supplier Device Package Package / Case
   
SI2342DS-T1-GE3 Datasheet SI2342DS-T1-GE3 - Vishay Siliconix SI2342DS-T1-GE3TR-ND SI2342DS-T1-GE3 MOSFET N-CH 8V 6A SOT-23 21.000 - Immediate Available: 21.000 0,14022 € 3.000 Minimum: 3.000 Tape & Reel (TR)
Alternate Packaging
TrenchFET® Active N-Channel MOSFET (Metal Oxide) 8V 6A (Tc) 1.2V, 4.5V 17mOhm @ 7.2A, 4.5V 800mV @ 250µA 15,8nC @ 4,5V ±5V 1070pF @ 4V
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2.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount SOT-23 TO-236-3, SC-59, SOT-23-3
SI2342DS-T1-GE3 Datasheet SI2342DS-T1-GE3 - Vishay Siliconix SI2342DS-T1-GE3CT-ND SI2342DS-T1-GE3 MOSFET N-CH 8V 6A SOT-23 23.733 - Immediate Available: 23.733 0,42000 € 1 Minimum: 1 Cut Tape (CT)
Alternate Packaging
TrenchFET® Active N-Channel MOSFET (Metal Oxide) 8V 6A (Tc) 1.2V, 4.5V 17mOhm @ 7.2A, 4.5V 800mV @ 250µA 15,8nC @ 4,5V ±5V 1070pF @ 4V
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2.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount SOT-23 TO-236-3, SC-59, SOT-23-3
SI2342DS-T1-GE3 Datasheet SI2342DS-T1-GE3 - Vishay Siliconix SI2342DS-T1-GE3DKR-ND SI2342DS-T1-GE3 MOSFET N-CH 8V 6A SOT-23 23.733 - Immediate Available: 23.733 Digi-Reel® 1 Minimum: 1 Digi-Reel®
Alternate Packaging
TrenchFET® Active N-Channel MOSFET (Metal Oxide) 8V 6A (Tc) 1.2V, 4.5V 17mOhm @ 7.2A, 4.5V 800mV @ 250µA 15,8nC @ 4,5V ±5V 1070pF @ 4V
-
2.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount SOT-23 TO-236-3, SC-59, SOT-23-3
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06:02:59 1.26.2021