IRLMS2002 Infineon Technologies - Transistors - FETs, MOSFETs - Single

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Compare Parts Datasheets Image Digi-Key Part Number Manufacturer Part Number Manufacturer Description Quantity Available
Unit Price
EUR
Minimum Quantity Packaging Series Part Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Mounting Type Supplier Device Package Package / Case
   
IRLMS2002TRPBF Datasheet IRLMS2002TRPBF - Infineon Technologies IRLMS2002PBFTR-ND IRLMS2002TRPBF Infineon Technologies MOSFET N-CH 20V 6.5A MICRO6 28.870 - Immediate Available: 28.870 €0,27267 3.000 Minimum: 3.000 Tape & Reel (TR)
Alternate Packaging
HEXFET® Active N-Channel MOSFET (Metal Oxide) 20V 6.5A (Ta) 2.5V, 4.5V 30mOhm @ 6.5A, 4.5V 1.2V @ 250µA 22nC @ 5V ±12V 1310pF @ 15V
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2W (Ta) -55°C ~ 150°C (TJ) Surface Mount Micro6™(SOT23-6) SOT-23-6
IRLMS2002TRPBF Datasheet IRLMS2002TRPBF - Infineon Technologies IRLMS2002PBFCT-ND IRLMS2002TRPBF Infineon Technologies MOSFET N-CH 20V 6.5A MICRO6 28.870 - Immediate Available: 28.870 €0,61000 1 Minimum: 1 Cut Tape (CT)
Alternate Packaging
HEXFET® Active N-Channel MOSFET (Metal Oxide) 20V 6.5A (Ta) 2.5V, 4.5V 30mOhm @ 6.5A, 4.5V 1.2V @ 250µA 22nC @ 5V ±12V 1310pF @ 15V
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2W (Ta) -55°C ~ 150°C (TJ) Surface Mount Micro6™(SOT23-6) SOT-23-6
IRLMS2002TRPBF Datasheet IRLMS2002TRPBF - Infineon Technologies IRLMS2002PBFDKR-ND IRLMS2002TRPBF Infineon Technologies MOSFET N-CH 20V 6.5A MICRO6 28.870 - Immediate Available: 28.870 Digi-Reel® 1 Minimum: 1 Digi-Reel®
Alternate Packaging
HEXFET® Active N-Channel MOSFET (Metal Oxide) 20V 6.5A (Ta) 2.5V, 4.5V 30mOhm @ 6.5A, 4.5V 1.2V @ 250µA 22nC @ 5V ±12V 1310pF @ 15V
-
2W (Ta) -55°C ~ 150°C (TJ) Surface Mount Micro6™(SOT23-6) SOT-23-6
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10:00:45 9.23.2021