MBT/SMBT3906DW1T1 Datasheet by ON Semiconductor

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© Semiconductor Components Industries, LLC, 2013
August, 2019 Rev. 7
1Publication Order Number:
MBT3906DW1T1/D
MBT3906DW1
Dual General Purpose
Transistor
The MBT3906DW1 device is a spinoff of our popular
SOT23/SOT323 threeleaded device. It is designed for general
purpose amplifier applications and is housed in the SOT363
sixleaded surface mount package. By putting two discrete devices in
one package, this device is ideal for lowpower surface mount
applications where board space is at a premium.
Features
hFE, 100300
Low VCE(sat), 0.4 V
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Available in 8 mm, 7inch/3,000 Unit Tape and Reel
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AECQ101 Qualified and
PPAP Capable
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit
CollectorEmitter Voltage VCEO 40 Vdc
CollectorBase Voltage VCBO 40 Vdc
EmitterBase Voltage VEBO 5.0 Vdc
Collector Current Continuous IC200 mAdc
Electrostatic Discharge ESD HBM Class 2
MM Class B
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Package Dissipation (Note 1)
TA = 25°C
PD150 mW
Thermal Resistance,
JunctiontoAmbient
RqJA 833 °C/W
Junction and Storage
Temperature Range
TJ, Tstg 55 to +150 °C
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum
recommended footprint.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
SOT363/SC88
CASE 419B
STYLE 1
MARKING
DIAGRAM
XX = Device Code
M = Date Code
G= PbFree Package
XX MG
G
1
6
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(Note: Microdot may be in either location)
See detailed ordering, marking and shipping information in the
package dimensions section on page 6 of this data sheet.
ORDERING INFORMATION
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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (Note 2) V(BR)CEO 40 Vdc
CollectorBase Breakdown Voltage V(BR)CBO 40 Vdc
EmitterBase Breakdown Voltage V(BR)EBO 5.0 Vdc
Base Cutoff Current IBL − −50 nAdc
Collector Cutoff Current ICEX − −50 nAdc
ON CHARACTERISTICS (Note 2)
DC Current Gain
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 50 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
hFE
60
80
100
60
30
300
CollectorEmitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
VCE(sat)
0.25
0.4
Vdc
Base Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
VBE(sat)
0.65
0.85
0.95
Vdc
SMALLSIGNAL CHARACTERISTICS
CurrentGain Bandwidth Product fT250 MHz
Output Capacitance Cobo 4.5 pF
Input Capacitance Cibo 10.0 pF
Input Impedance
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
hie
2.0 12
kW
Voltage Feedback Ratio
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
hre
0.1 10
X 104
SmallSignal Current Gain
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
hfe
100 400
Output Admittance
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
hoe
3.0 60
mmhos
Noise Figure
(VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 k W, f = 1.0 kHz)
NF
4.0
dB
SWITCHING CHARACTERISTICS
Delay Time (VCC = 3.0 Vdc, VBE = 0.5 Vdc) td35
ns
Rise Time (IC = 10 mAdc, IB1 = 1.0 mAdc) tr35
Storage Time (VCC = 3.0 Vdc, IC = 10 mAdc) ts225
ns
Fall Time (IB1 = IB2 = 1.0 mAdc) tf75
2. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%.
Mi: Figure 1. Delay and Rise Time Figure 2. Storage and Fall Time Equivalent Test Circuit Equivalent Test Circuit
MBT3906DW1
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3
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure 2. Storage and Fall Time
Equivalent Test Circuit
3 V
275
10 k
1N916 Cs < 4 pF*
3 V
275
10 k
Cs < 4 pF*
< 1 ns
+0.5 V
10.6 V 300 ns
DUTY CYCLE = 2%
< 1 ns
+9.1 V
10.9 V
DUTY CYCLE = 2%
t1
0
10 < t1 < 500 ms
* Total shunt capacitance of test jig and connectors
TYPICAL TRANSIENT CHARACTERISTICS
Figure 3. Capacitance
REVERSE BIAS (VOLTS)
2.0
3.0
5.0
7.0
10
1.0
0.1
Figure 4. Charge Data
IC, COLLECTOR CURRENT (mA)
5000
1.0
VCC = 40 V
IC/IB = 10
Q, CHARGE (pC)
3000
2000
1000
500
300
200
700
100
50
70
2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
CAPACITANCE (pF)
1.0 2.0 3.0 5.0 7.0 10 20 30 40
0.2 0.3 0.5 0.7
QT
QA
Cibo
Cobo
TJ = 25°C
TJ = 125°C
Figure 5. Turn On Time
IC, COLLECTOR CURRENT (mA)
70
100
200
300
500
50
TIME (ns)
1.0 2.0 3.0 10 20 70
5100
Figure 6. Fall Time
IC, COLLECTOR CURRENT (mA)
5.0 7.0 30 50 200
10
30
7
20
70
100
200
300
500
50
1.0 2.0 3.0 10 20 70
5100
5.0 7.0 30 50 200
10
30
7
20
t , FALL TIME (ns)
f
VCC = 40 V
IB1 = IB2
IC/IB = 20
IC/IB = 10
IC/IB = 10
tr @ VCC = 3.0 V
td @ VOB = 0 V
40 V
15 V
2.0 V
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TYPICAL AUDIO SMALLSIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(VCE = 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)
Figure 7.
f, FREQUENCY (kHz)
2.0
3.0
4.0
5.0
1.0
0.1
Figure 8.
Rg, SOURCE RESISTANCE (k OHMS)
0
NF, NOISE FIGURE (dB)
1.0 2.0 4.0 10 20 40
0.2 0.4
0100
4
6
8
10
12
2
0.1 1.0 2.0 4.0 10 20 40
0.2 0.4 100
NF, NOISE FIGURE (dB)
f = 1.0 kHz IC = 1.0 mA
IC = 0.5 mA
IC = 50 mA
IC = 100 mA
SOURCE RESISTANCE = 200 W
IC = 1.0 mA
SOURCE RESISTANCE = 200 W
IC = 0.5 mA
SOURCE RESISTANCE = 2.0 k
IC = 100 mA
SOURCE RESISTANCE = 2.0 k
IC = 50 mA
h PARAMETERS
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C)
Figure 9. Current Gain
IC, COLLECTOR CURRENT (mA)
70
100
200
300
50
Figure 10. Output Admittance
IC, COLLECTOR CURRENT (mA)
h , DC CURRENT GAIN
h , OUTPUT ADMITTANCE ( mhos)
Figure 11. Input Impedance
IC, COLLECTOR CURRENT (mA)
Figure 12. Voltage Feedback Ratio
IC, COLLECTOR CURRENT (mA)
30
100
50
10
20
2.0
3.0
5.0
7.0
10
1.0
0.1 0.2 1.0 2.0 5.0
0.5 10
0.3 0.5 3.0
0.7
2.0
5.0
10
20
1.0
0.2
0.5
oe
h , INPUT IMPEDANCE (k OHMS)
ie
0.1 0.2 1.0 2.0 5.0 10
0.3 0.5 3.0
0.1 0.2 1.0 2.0 5.0 10
0.3 0.5 3.0
7
5
0.1 0.2 1.0 2.0 5.0 10
0.3 0.5 3.0
fe
m
70
30
0.7 7.0
0.7 7.0
7.0
3.0
0.7
0.3
0.7 7.0
0.7 7.0
h , VOLTAGE FEEDBACK RATIO (x 10 )
re -4
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TYPICAL STATIC CHARACTERISTICS
Figure 13. DC Current Gain
IC, COLLECTOR CURRENT (mA)
0.3
0.5
0.7
1.0
2.0
0.2
0.1
h , DC CURRENT GAIN (NORMALIZED)
0.5 2.0 3.0 10 50 70
0.2 0.3
0.1 100
1.00.7 200
30205.0 7.0
FE
VCE = 1.0 V
TJ = +125°C
+25°C
-55°C
Figure 14. Collector Saturation Region
IB, BASE CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
0.1
V , COLLECTOR EMITTER VOLTAGE (VOLTS)
0.5 2.0 3.0 100.2 0.3
01.00.7 5.0 7.0
CE
IC = 1.0 mA
TJ = 25°C
0.070.050.030.020.01
10 mA 30 mA 100 mA
Figure 15. “ON” Voltages
IC, COLLECTOR CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
Figure 16. Temperature Coefficients
IC, COLLECTOR CURRENT (mA)
V, VOLTAGE (VOLTS)
1.0 2.0 5.0 10 20 50
0100
-0.5
0
0.5
1.0
0 60 80 120 140 160 180
20 40 100 200
-1.0
-1.5
-2.0
200
TJ = 25°C VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE @ VCE = 1.0 V
+25°C TO +125°C
-55°C TO +25°C
+25°C TO +125°C
-55°C TO +25°C
qVC FOR VCE(sat)
qVB FOR VBE(sat)
, TEMPERATURE COEFFICIENTS (mV/ C)°
V
q
HF? Lib“? ULJ HF? Lib“? ULJ LL
MBT3906DW1
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6
DEVICE ORDERING INFORMATION
Device Marking Pin Out Package Shipping
MBT3906DW1T1G A2 SOT363
(PbFree)
3000 / Tape & Reel
SMBT3906DW1T1G A2 SOT363
(PbFree)
3000 / Tape & Reel
SMBT3906DW3T1G A3 SOT363
(PbFree)
3000 / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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MBT3906DW1
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7
PACKAGE DIMENSIONS
SC88/SC706/SOT363
CASE 419B02
ISSUE Y
STYLE 1:
PIN 1. EMITTER 2
2. BASE 2
3. COLLECTOR 1
4. EMITTER 1
5. BASE 1
6. COLLECTOR 2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRU-
SIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END.
4. DIMENSIONS D AND E1 AT THE OUTERMOST EXTREMES OF
THE PLASTIC BODY AND DATUM H.
5. DATUMS A AND B ARE DETERMINED AT DATUM H.
6. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE
LEAD BETWEEN 0.08 AND 0.15 FROM THE TIP.
7. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION.
ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN
EXCESS OF DIMENSION b AT MAXIMUM MATERIAL CONDI-
TION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER
RADIUS OF THE FOOT.
Cddd M
123
A1
A
c
654
E
b
6X DIM MIN NOM MAX
MILLIMETERS
A−−− −−− 1.10
A1 0.00 −−− 0.10
ddd
b0.15 0.20 0.25
C0.08 0.15 0.22
D1.80 2.00 2.20
−−− −−− 0.043
0.000 −−− 0.004
0.006 0.008 0.010
0.003 0.006 0.009
0.070 0.078 0.086
MIN NOM MAX
INCHES
0.10 0.004
E1 1.15 1.25 1.35
e0.65 BSC
L0.26 0.36 0.46
2.00 2.10 2.20
0.045 0.049 0.053
0.026 BSC
0.010 0.014 0.018
0.078 0.082 0.086
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
0.65
0.66
6X
DIMENSIONS: MILLIMETERS
0.30
PITCH
2.50
6X
RECOMMENDED
TOP VIEW
SIDE VIEW END VIEW
bbb H
B
SEATING
PLANE
DETAIL A E
A2 0.70 0.90 1.00 0.027 0.035 0.039
L2 0.15 BSC 0.006 BSC
aaa 0.15 0.006
bbb 0.30 0.012
ccc 0.10 0.004
A-B D
aaa C
2X 3 TIPS
D
E1
D
e
A
2X
aaa H D
2X
D
L
PLANE
DETAIL A
H
GAGE
L2
C
ccc C
A2
6X
MBT3906DW1T1/D
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