BC,SBC846ALT1G Series Datasheet by ON Semiconductor

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0N Semiconductor® www.0nsemi.com
© Semiconductor Components Industries, LLC, 1994
December, 2019 Rev. 18
1Publication Order Number:
BC846ALT1/D
General Purpose
Transistors
NPN Silicon
BC846ALT1G Series
Features
Moisture Sensitivity Level: 1
ESD Rating Human Body Model: > 4000 V
ESD Rating Machine Model: > 400 V
S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AECQ101
Qualified and PPAP Capable
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector-Emitter Voltage
BC846
BC847, BC850
BC848, BC849
VCEO
65
45
30
Vdc
CollectorBase Voltage
BC846
BC847, BC850
BC848, BC849
VCBO
80
50
30
Vdc
EmitterBase Voltage
BC846
BC847, BC850
BC848, BC849
VEBO
6.0
6.0
5.0
Vdc
Collector Current Continuous IC100 mAdc
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR5 Board,
(Note 1)
TA = 25°C
Derate above 25°C
PD225
1.8
mW
mW/°C
Thermal Resistance,
JunctiontoAmbient (Note 1)
RqJA 556 °C/W
Total Device Dissipation
Alumina Substrate (Note 2)
TA = 25°C
Derate above 25°C
PD300
2.4
mW
mW/°C
Thermal Resistance,
JunctiontoAmbient (Note 2)
RqJA 417 °C/W
Junction and Storage
Temperature Range
TJ, Tstg 55 to
+150
°C
1. FR5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in 99.5% alumina.
SOT23
CASE 318
STYLE 6
MARKING DIAGRAM
1
2
3
COLLECTOR
3
1
BASE
2
EMITTER
See detailed ordering and shipping information in the package
dimensions section on page 12 of this data sheet.
ORDERING INFORMATION
1
XX M G
G
XX = Device Code
M = Date Code*
G=PbFree Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
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BC846ALT1G Series
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage BC846A, B, C
(IC = 10 mA) BC847A, B, C, BC850B, C
BC848A, B, C, BC849B, C
V(BR)CEO 65
45
30
V
CollectorEmitter Breakdown Voltage BC846A, B, C
(IC = 10 mA, VEB = 0) BC847A, B, C BC850B, C
BC848A, B, C, BC849B, C
V(BR)CES 80
50
30
V
CollectorBase Breakdown Voltage BC846A, B, C
(IC = 10 mA) BC847A, B, C, BC850B, C
BC848A, B, C, BC849B, C
V(BR)CBO 80
50
30
V
EmitterBase Breakdown Voltage BC846A, B, C
(IE = 1.0 mA) BC847A, B, C, BC850B, C
BC848A, B, C, BC849B, C
V(BR)EBO 6.0
6.0
5.0
V
Collector Cutoff Current (VCB = 30 V)
(VCB = 30 V, TA = 150°C)
ICBO
15
5.0
nA
mA
ON CHARACTERISTICS
DC Current Gain BC846A, BC847A, BC848A
(IC = 10 mA, VCE = 5.0 V) BC846B, BC847B, BC848B
BC846C, BC847C, BC848C
(IC = 2.0 mA, VCE = 5.0 V) BC846A, BC847A, BC848A
BC846B, BC847B, BC848B,
BC849B, BC850B
BC846C, BC847C, BC848C, BC849C, BC850C
hFE
110
200
420
90
150
270
180
290
520
220
450
800
CollectorEmitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
CollectorEmitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
VCE(sat)
0.25
0.6
V
Base Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Base Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
VBE(sat)
0.7
0.9
V
Base Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)
Base Emitter Voltage (IC = 10 mA, VCE = 5.0 V)
VBE(on) 580
660
700
770
mV
SMALLSIGNAL CHARACTERISTICS
CurrentGain Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
fT100 MHz
Output Capacitance (VCB = 10 V, f = 1.0 MHz) Cobo 4.5 pF
Noise Figure (IC = 0.2 mA,
VCE = 5.0 Vdc, RS = 2.0 kW, BC846A,B,C, BC847A,B,C, BC848A,B,C
f = 1.0 kHz, BW = 200 Hz) BC849B,C, BC850B,C
NF
10
4.0
dB
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
BC846ALT1G Series
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3
BC846A, BC847A, BC848A, SBC846A
Figure 1. DC Current Gain vs. Collector
Current
IC, COLLECTOR CURRENT (A)
0.10.010.001
0
100
200
300
hFE, DC CURRENT GAIN
1
VCE = 1 V
150°C
55°C
25°C
Figure 2. DC Current Gain vs. Collector
Current
IC, COLLECTOR CURRENT (A)
0.10.010.001
0
100
200
300
hFE, DC CURRENT GAIN
1
VCE = 5 V
150°C
55°C
25°C
Figure 3. Collector Emitter Saturation Voltage
vs. Collector Current
IC, COLLECTOR CURRENT (A)
0.10.010.0010.0001
0
0.02
0.18
Figure 4. Base Emitter Saturation Voltage vs.
Collector Current
Figure 5. Base Emitter Voltage vs. Collector
Current
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
0.10.010.0010.0001
0.2
0.3
0.5
0.6
0.7
0.8
1.0
0.10.010.0010.0001
0.2
0.3
0.5
0.6
0.8
0.9
1.0
1.2
VCE(sat), COLLECTOREMITTER
SATURATION VOLTAGE (V)
VBE(sat), BASEEMITTER
SATURATION VOLTAGE (V)
VBE(on), BASEEMITTER VOLTAGE (V)
IC/IB = 20 150°C
55°C
25°C
0.4
0.9 IC/IB = 20
150°C
55°C
25°C
0.4
0.7
1.1 VCE = 5 V
150°C
55°C
25°C
0.04
0.06
0.08
0.10
0.12
0.14
0.16
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BC846A, BC847A, BC848A, SBC846A
Figure 6. Collector Saturation Region
IB, BASE CURRENT (mA)
Figure 7. BaseEmitter Temperature Coefficient
IC, COLLECTOR CURRENT (mA)
1.6
1.2
2.0
2.8
2.4
1.2
1.6
2.0
0.02 1.0 10
020
0.1
0.4
0.8
VCE, COLLECTOR-EMITTER VOLTAGE (V)
VB, TEMPERATURE COEFFICIENT (mV/ C)°θ
0.2 1.0 10 100
-55°C to +125°CTA = 25°C
IC = 50 mA IC = 100 mA
IC = 200 mA
IC =
20 mA
IC =
10 mA
1.0
Figure 8. Capacitances
VR, REVERSE VOLTAGE (VOLTS)
10
Figure 9. CurrentGain Bandwidth Product
IC, COLLECTOR CURRENT (mAdc)
0.4 0.6 1.0 10 20
1.0 2.0 6.0 40
80
100
200
300
400
60
20
40
30
7.0
5.0
3.0
2.0
0.7 1.0 10 202.0 50
307.05.03.00.5
VCE = 10 V
TA = 25°C
C, CAPACITANCE (pF)
f, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
T
0.8 4.0 8.0
TA = 25°C
Cob
Cib
150:0 59 I I
BC846ALT1G Series
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5
BC846B, SBC846B
Figure 10. DC Current Gain vs. Collector
Current
IC, COLLECTOR CURRENT (A)
0.10.010.001
0
100
200
300
400
600
hFE, DC CURRENT GAIN
1
VCE = 1 V
150°C
55°C
25°C
500
Figure 11. DC Current Gain vs. Collector
Current
IC, COLLECTOR CURRENT (A)
0.10.010.001
0
100
200
300
400
600
hFE, DC CURRENT GAIN
1
VCE = 5 V
150°C
55°C
25°C
500
Figure 12. Collector Emitter Saturation Voltage
vs. Collector Current
IC, COLLECTOR CURRENT (A)
0.10.010.0010.0001
0
0.15
0.30
Figure 13. Base Emitter Saturation Voltage vs.
Collector Current
Figure 14. Base Emitter Voltage vs. Collector
Current
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
0.10.010.0010.0001
0.2
0.3
0.5
0.6
0.7
0.8
1.0
1.1
0.10.010.0010.0001
0.2
0.3
0.5
0.6
0.8
0.9
1.0
1.2
VCE(sat), COLLECTOREMITTER
SATURATION VOLTAGE (V)
VBE(sat), BASEEMITTER
SATURATION VOLTAGE (V)
VBE(on), BASEEMITTER VOLTAGE (V)
IC/IB = 20 150°C
55°C
25°C
0.4
0.9
IC/IB = 20
150°C
55°C
25°C
0.4
0.7
1.1 VCE = 5 V
150°C
55°C
25°C
0.25
0.20
0.05
0.10
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BC846B, SBC846B
Figure 15. Collector Saturation Region
IB, BASE CURRENT (mA)
Figure 16. BaseEmitter Temperature Coefficient
IC, COLLECTOR CURRENT (mA)
1.0
1.2
1.6
2.0
0.02 1.0 10
020
0.1
0.4
0.8
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
VB, TEMPERATURE COEFFICIENT (mV/ C)°θ
0.2 2.0 10 200
1.0
TA = 25°C
200 mA
50 mA
IC =
10 mA
0.05 0.2 0.5 2.0 5.0
100 mA
20 mA
1.4
1.8
2.2
2.6
3.0
0.5 5.0 20 50 100
-55°C to 125°C
qVB for VBE
Figure 17. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
40
Figure 18. CurrentGain Bandwidth Product
IC, COLLECTOR CURRENT (mA)
0.1 0.2 1.0 50
2.0 2.0 10 100
100
200
500
50
20
20
10
6.0
4.0
1.0 10 50 100
5.0
VCE = 5 V
TA = 25°C
C, CAPACITANCE (pF)
f, CURRENT-GAIN - BANDWIDTH PRODUCT
T
0.5 5.0 20
TA = 25°C
Cob
Cib
BC846ALT1G Series
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BC847B, BC848B, BC849B, BC850B, SBC847B, SBC848B
Figure 19. DC Current Gain vs. Collector
Current
IC, COLLECTOR CURRENT (A)
0.10.010.001
0
100
200
600
hFE, DC CURRENT GAIN
1
VCE = 1 V
150°C
55°C
25°C
300
400
500
Figure 20. DC Current Gain vs. Collector
Current
IC, COLLECTOR CURRENT (A)
0.10.010.001
0
100
200
600
hFE, DC CURRENT GAIN
1
VCE = 5 V
150°C
55°C
25°C
300
400
500
Figure 21. Collector Emitter Saturation Voltage
vs. Collector Current
IC, COLLECTOR CURRENT (A)
0.10.010.0010.0001
0
0.05
0.30
Figure 22. Base Emitter Saturation Voltage vs.
Collector Current
Figure 23. Base Emitter Voltage vs. Collector
Current
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
0.10.010.0010.0001
0.2
0.3
0.5
0.6
0.7
0.8
1.1
0.10.010.0010.0001
0.2
0.3
0.5
0.6
0.8
0.9
1.0
1.2
VCE(sat), COLLECTOREMITTER
SATURATION VOLTAGE (V)
VBE(sat), BASEEMITTER
SATURATION VOLTAGE (V)
VBE(on), BASEEMITTER VOLTAGE (V)
IC/IB = 20
150°C
55°C
25°C
0.4
0.9
IC/IB = 20
150°C
55°C
25°C
0.4
0.7
1.1 VCE = 5 V
150°C
55°C
25°C
0.10
0.15
0.20
0.25
1.0
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BC847B, BC848B, BC849B, BC850B, SBC846B, SBC847B, SBC848B
Figure 24. Collector Saturation Region
IB, BASE CURRENT (mA)
Figure 25. BaseEmitter Temperature
Coefficient
IC, COLLECTOR CURRENT (mA)
1.6
1.2
2.0
2.8
2.4
1.2
1.6
2.0
0.02 1.0 10
020
0.1
0.4
0.8
VCE, COLLECTOR-EMITTER VOLTAGE (V)
VB, TEMPERATURE COEFFICIENT (mV/ C)°θ
0.2 1.0 10 100
-55°C to +125°CTA = 25°C
IC = 50 mA IC = 100 mA
IC = 200 mA
IC =
20 mA
IC =
10 mA
1.0
Figure 26. Capacitances
VR, REVERSE VOLTAGE (VOLTS)
10
Figure 27. CurrentGain Bandwidth Product
IC, COLLECTOR CURRENT (mAdc)
0.4 0.6 1.0 10 20
1.0 2.0 6.0 40
80
100
200
300
400
60
20
40
30
7.0
5.0
3.0
2.0
0.7 1.0 10 202.0 50
307.05.03.00.5
VCE = 10 V
TA = 25°C
C, CAPACITANCE (pF)
f, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
T
0.8 4.0 8.0
TA = 25°C
Cob
Cib
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BC846C, BC847C, BC848C, BC849C, BC850C, SBC847C
Figure 28. DC Current Gain vs. Collector
Current
IC, COLLECTOR CURRENT (A)
0.10.010.001
0
100
200
1000
hFE, DC CURRENT GAIN
1
VCE = 1 V
150°C
55°C
25°C
300
400
500
600
700
800
900
Figure 29. DC Current Gain vs. Collector
Current
IC, COLLECTOR CURRENT (A)
0.10.010.001
0
100
200
1000
hFE, DC CURRENT GAIN
1
VCE = 5 V
150°C
55°C
25°C
300
400
500
600
700
800
900
Figure 30. Collector Emitter Saturation Voltage
vs. Collector Current
IC, COLLECTOR CURRENT (A)
0.10.010.0010.0001
0
0.05
0.30
Figure 31. Base Emitter Saturation Voltage vs.
Collector Current
Figure 32. Base Emitter Voltage vs. Collector
Current
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
0.10.010.0010.0001
0.2
0.3
0.5
0.6
0.7
0.8
1.1
0.10.010.0010.0001
0.2
0.3
0.5
0.6
0.8
0.9
1.0
1.2
VCE(sat), COLLECTOREMITTER
SATURATION VOLTAGE (V)
VBE(sat), BASEEMITTER
SATURATION VOLTAGE (V)
VBE(on), BASEEMITTER VOLTAGE (V)
IC/IB = 20
150°C
55°C
25°C
0.4
0.9
IC/IB = 20
150°C
55°C
25°C
0.4
0.7
1.1 VCE = 5 V
150°C
55°C
25°C
0.10
0.15
0.20
0.25
1.0
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BC846C, BC847C, BC848C, BC849C, BC850C, SBC847C
Figure 33. Collector Saturation Region
IB, BASE CURRENT (mA)
Figure 34. BaseEmitter Temperature
Coefficient
IC, COLLECTOR CURRENT (mA)
1.6
1.2
2.0
2.8
2.4
1.2
1.6
2.0
0.02 1.0 10
020
0.1
0.4
0.8
VCE, COLLECTOR-EMITTER VOLTAGE (V)
VB, TEMPERATURE COEFFICIENT (mV/ C)°θ
0.2 1.0 10 100
-55°C to +125°CTA = 25°C
IC = 50 mA IC = 100 mA
IC = 200 mA
IC =
20 mA
IC =
10 mA
1.0
Figure 35. Capacitances
VR, REVERSE VOLTAGE (VOLTS)
10
Figure 36. CurrentGain Bandwidth Product
IC, COLLECTOR CURRENT (mAdc)
0.4 0.6 1.0 10 20
1.0 2.0 6.0 40
80
100
200
300
400
60
20
40
30
7.0
5.0
3.0
2.0
0.7 1.0 10 202.0 50
307.05.03.00.5
VCE = 10 V
TA = 25°C
C, CAPACITANCE (pF)
f, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
T
0.8 4.0 8.0
TA = 25°C
Cob
Cib
Thermal men Thermal mem 1ooms:1o “ \ 15 Thermal lelt
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1 mS
Thermal Limit
1 S
Figure 37. Safe Operating Area for
BC846A, BC846B, BC846C
Figure 38. Safe Operating Area for
BC847A, BC847B, BC847C, BC850B, BC850C
VCE, COLLECTOR EMITTER VOLTAGE (V) VCE, COLLECTOR EMITTER VOLTAGE (V)
100101
0.001
0.01
0.1
1
1001010.1
0.001
0.01
0.1
1
Figure 39. Safe Operating Area for
BC848A, BC848B, BC848C, BC849B, BC849C
VCE, COLLECTOR EMITTER VOLTAGE (V)
1001010.1
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
100 mS 10 mS
1 mS
Thermal Limit
1 S
100 mS 10 mS
1 mS
Thermal Limit
1 S
100 mS 10 mS
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ORDERING INFORMATION
Device Marking Package Shipping
BC846ALT1G
1A
SOT23
(PbFree)
3,000 / Tape & Reel
SBC846ALT1G*
BC846ALT3G 10,000 / Tape & Reel
BC846BLT1G
1B
3,000 / Tape & Reel
SBC846BLT1G*
BC846BLT3G
10,000 / Tape & Reel
SBC846BLT3G*
BC846CLT1G 3C 3,000 / Tape & Reel
BC847ALT1G
1E
3,000 / Tape & Reel
BC847ALT3G 10,000 / Tape & Reel
BC847BLT1G
1F
3,000 / Tape & Reel
SBC847BLT1G*
BC847BLT3G
10,000 / Tape & Reel
NSVBC847BLT3G*
BC847CLT1G
1G 3,000 / Tape & Reel
SBC847CLT1G*
BC847CLT3G 10,000 / Tape & Reel
BC848ALT1G 1J 3,000 / Tape & Reel
BC848BLT1G
1K 3,000 / Tape & Reel
SBC848BLT1G*
BC848BLT3G 10,000 / Tape & Reel
BC848CLT1G
1L 3,000 / Tape & Reel
NSVBC848CLT1G*
BC848CLT3G 10,000 / Tape & Reel
BC849BLT1G
2B 3,000 / Tape & Reel
NSVBC849BLT1G*
BC849BLT3G 10,000 / Tape & Reel
BC849CLT1G
2C
3,000 / Tape & Reel
BC849CLT3G 10,000 / Tape & Reel
BC850BLT1G
2F
3,000 / Tape & Reel
NSVBC850BLT1G*
BC850CLT1G
2G
NSVBC850CLT1G*
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Spe-
cifications Brochure, BRD8011/D.
*S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified
and PPAP Capable.
MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS 0N Semiwndudw" SOTeza (Toezas) CASEsIaeoa w ISSUEAS (:2 DATE 30 JAN 2018 SCALE“ D NOTES I DIMENSIONINGANDTOLERANCINGPERASMEVIASM I556 2 comemwe DIMENSION MILLIMEIERS I: 3 MAXIMUM LEADTHICKNESS Names LEAD FINISH 0.25 7 MINIMUM LEAD THICKNESS IS THE MINIMuM nucxNeaa OF A 3 THE EASE MATERIAL I H 4 DIMENSIONSDANDEDONOTINCLUDEMOLDFLASH E y E PROIRuSIONS. 0R GATE aueea ‘ Z 7 MILUMETERS INCHES [I] 7 mm mm mm MAX MIN no». MAX A cae I00 III mus me 0045 +I F3” A1 am we am Dona acne Dom a m Du 05D nms mm 0020 a» a ma an m Dona Duos Duos TOPVIEW a 230 250 :04 mm am 0120 E I20 I30 1M: 0047 005I 0055 A e I 73 I 50 2 D4 0070 0075 0050 L can an ass nmz mm 0022 LI D35 as. use mm mm 0027 i ‘ HE ZID 240 254 0083 0094 0106 H7 7 e r D" m n- , m M SIDE VIEW 5:: VIEW c/ C ENDVIEW GENERIC MARKING DIAGRAM‘ RECOMMENDED SOLDERING FDDTPRINT XXXM- 3X 290 7 + 7 70,90 1 ‘ W085 PITCH DIMENSIONS MILLIMEIERS 3X 0.50 a xxx : scecmc Device Code M : DaIe Ccae . : Pb-Free Package *rms inIcrmaIion Is geneIIC Please refer Io device aaIa sheeI Icr acmal pan maTkIrIg. PD-Free IndIcanr, “G" or mIcroch - I may or may noI be present. SWLE I TNRD s STVLE 5 STVLE 7 STVLE a CANCELLED FINI BASE PINI EMITTER FINI ANDDE 2 EMITTER 2 BASE 2 NocoNNECTIoN a COLLECTOR a COLLECIOR a CATRoDE SWLE 5 STVLE 10 STVLE II SWLE I2 STVLE I3 SWLE Io PINI ANoDE FINI DRAIN PINI ANoDE RINI CATNoDE PINI SOURCE RINI cATNoDE 2 MODE 2 SOURCE 2 CATHODE 2 CATHODE 2 DRAIN 2 GAVE 3 CATNODE a GATE 3 CATHODEVANODE 3 ANODE 3 GATE 3 ANODE SWLE I5 STVLE 16 STVLE I7 SWLE IE STVLE I9 SIVLE 2n PINI GATE FINI ANODE PINI NocoNNEcTIoN RINI NocoNNECTIoN PINI CATRoDE RINI cATNoDE 2 CATNoDE 2 CAIHODE 2 ANoDE 2 CATNoDE 2 ANoDE 2 ANoDE 3 ANoDE a CAIHODE a CATHODE 3 ANoDE 3 CATRoDEeANoDE 3 GATE SWLE 21 STVLE 22 STVLE 23 STVLE 24 STVLE 25 SIVLE 2s PINI GATE FINI RETuRN PINI ANoDE PINI GATE FINI ANDDE PINI CATNoDE 2 SOURCE 2 ouTRuT 2 ANoDE 2 DRAIN 2 CATRoDE 2 ANoDE 3 DRAIN 3 INPUT 3 CATHODE 3 SOURCE a GATE 3 No CONNECTION SWLE27 STVLEZB FINI CATNoDE RINI ANoDE 2 CATNoDE 2 ANoDE 3 CATNoDE 3 ANoDE ON SemIchduclm and ngnIs cI Dlhers ave hademavks cI SemIchduclur Campcnems lndusllles. LLC dba oN Semlcanduclar Dr .Is suhsIdIarIes In Ine DnIIea sxaIes andJDI aIneI cmmITIEs ON SemIcunduchr vesewes Ine "gm Ia make changes wIlhDIA lunhEI ncnce Ia any prawns nequn oN SEmenducmv makes m7 wananIy. represenlalmn m guarantee regardmg Ine suIIaaIIIIy cI as manual: IDT any psflIcuIsI purpase nay caes ON SEmIchduclm assume any IIaInIIIy vasIng auIeI Ine aaeIIcaIIan a. use aI any pmdudm man and spEcIlIcslIy dlscIaIms any and an IIaaIIIIy IncIudIng wmm IInnIaIIcn spEcIaI canseaaenIIaI a. IncIcenIaI damages oN SemImnduchr dues neI aenvey any IICEME under IIs paIenI lIghl: Ivar Ine
SOT23 (TO236)
CASE 31808
ISSUE AS
DATE 30 JAN 2018
SCALE 4:1
D
A1
3
12
1
XXXMG
G
XXX = Specific Device Code
M = Date Code
G= PbFree Package
*This information is generic. Please refer to
device data sheet for actual part marking.
PbFree indicator, “G” or microdot “ G”,
may or may not be present.
GENERIC
MARKING DIAGRAM*
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
SOLDERING FOOTPRINT
VIEW C
L
0.25
L1
e
EE
b
A
SEE VIEW C
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.000
b0.37 0.44 0.50 0.015
c0.08 0.14 0.20 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.30 0.43 0.55 0.012
0.039 0.044
0.002 0.004
0.017 0.020
0.006 0.008
0.114 0.120
0.051 0.055
0.075 0.080
0.017 0.022
NOM MAX
L1
H
STYLE 22:
PIN 1. RETURN
2. OUTPUT
3. INPUT
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 7:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
STYLE 9:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 10:
PIN 1. DRAIN
2. SOURCE
3. GATE
STYLE 11:
PIN 1. ANODE
2. CATHODE
3. CATHODEANODE
STYLE 12:
PIN 1. CATHODE
2. CATHODE
3. ANODE
STYLE 13:
PIN 1. SOURCE
2. DRAIN
3. GATE
STYLE 14:
PIN 1. CATHODE
2. GATE
3. ANODE
STYLE 15:
PIN 1. GATE
2. CATHODE
3. ANODE
STYLE 16:
PIN 1. ANODE
2. CATHODE
3. CATHODE
STYLE 17:
PIN 1. NO CONNECTION
2. ANODE
3. CATHODE
STYLE 18:
PIN 1. NO CONNECTION
2. CATHODE
3. ANODE
STYLE 19:
PIN 1. CATHODE
2. ANODE
3. CATHODEANODE
STYLE 23:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 20:
PIN 1. CATHODE
2. ANODE
3. GATE
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
STYLE 1 THRU 5:
CANCELLED
STYLE 24:
PIN 1. GATE
2. DRAIN
3. SOURCE
STYLE 25:
PIN 1. ANODE
2. CATHODE
3. GATE
STYLE 26:
PIN 1. CATHODE
2. ANODE
3. NO CONNECTION
STYLE 27:
PIN 1. CATHODE
2. CATHODE
3. CATHODE
2.10 2.40 2.64 0.083 0.094 0.104
HE
0.35 0.54 0.69 0.014 0.021 0.027
c
0−−− 10 0 −−− 10
T°°°°
T
3X
TOP VIEW
SIDE VIEW
END VIEW
2.90
0.80
DIMENSIONS: MILLIMETERS
0.90
PITCH
3X
3X 0.95
RECOMMENDED
STYLE 28:
PIN 1. ANODE
2. ANODE
3. ANODE
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
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ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
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SOT23 (TO236)
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