BAT54T1 Datasheet by ON Semiconductor

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© Semiconductor Components Industries, LLC, 2014
April, 2014 − Rev. 10 Publication Order Number:
BAT54T1/D
1
BAT54T1G, SBAT54T1G
Schottky Barrier Diodes
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
Features
Extremely Fast Switching Speed
Low Forward Voltage − 0.35 Volts (Typ) @ IF = 10 mAdc
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 125°C unless otherwise noted)
Rating Symbol Value Unit
Reverse Voltage VR30 V
Forward Power Dissipation, FR−5 Board
(Note 1) @ TA = 25°C
Derate above 25°C
PF
400
3.2
mW
mW/°C
Thermal Resistance,
Junction−to−Case RJL 174 °C/W
Thermal Resistance,
Junction−to−Ambient RJA 492 °C/W
Forward Current (DC) IF200 Max mA
Non−Repetitive Peak Forward Current
tp < 10 msec IFSM 600 mA
Repetitive Peak Forward Current
Pulse Wave = 1 sec, Duty Cycle = 66% IFRM 300 mA
Junction Temperature TJ55 to 125 °C
Storage Temperature Range Tstg 55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR-5 = 1.0 x 0.75 x 0.062 in.
1
CATHODE
2
ANODE
30 VOLT
SCHOTTKY BARRIER
DETECTOR AND SWITCHING
DIODES
2
1
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1
Device Package Shipping
ORDERING INFORMATION
SOD−123
CASE 425
STYLE 1
MARKING DIAGRAM
BAT54T1G SOD−123
(Pb−Free)
3000 / Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
SBM G
G
SB = Device Code
M = Date Code
G= Pb−Free Package
(Note: Microdot may be in either location)
SBAT54T1G SOD−123
(Pb−Free)
3000 / Tape & Reel
BAT54T1G, SBAT54T1G
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Reverse Breakdown Voltage
(IR = 10 A)
V(BR)R 30 − V
Total Capacitance
(VR = 1.0 V, f = 1.0 MHz)
CT 7.6 10 pF
Reverse Leakage
(VR = 25 V)
IR 0.5 2.0 Adc
Forward Voltage
(IF = 0.1 mAdc)
VF 0.22 0.24 Vdc
Forward Voltage
(IF = 30 mAdc)
VF 0.41 0.5 Vdc
Forward Voltage
(IF = 100 mAdc)
VF 0.52 0.8 Vdc
Reverse Recovery Time
(IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc, Figure 1)
trr − 5.0 ns
Forward Voltage
(IF = 1.0 mAdc)
VF 0.29 0.32 Vdc
Forward Voltage
(IF = 10 mAdc)
VF 0.35 0.40 Vdc
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
+
10 V 2 k
820
0.1 F
DUT
VR
100 H
0.1 F
50 Output
Pulse
Generator
50 Input
Sampling
Oscilloscope
trtpt
10%
90%
IF
IR
trr t
iR(REC) = 1 mA
OUTPUT PULSE
(IF = IR = 10 mA; measured
at iR(REC) = 1 mA)
IF
INPUT SIGNAL
Figure 1. Recovery Time Equivalent Test Circuit
BAT54T1G, SBAT54T1G
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3
CT, TOTAL CAPACITANCE (pF)
100
0.0 0.1
VF, FORWARD VOLTAGE (VOLTS)
0.2 0.3 0.4 0.5
10
1.0
0.1
85°C
10
0
VR, REVERSE VOLTAGE (VOLTS)
1.0
0.1
0.01
0.001 510
15 20 25
0
VR, REVERSE VOLTAGE (VOLTS)
51015 30
Figure 2. Forward Voltage
Figure 3. Leakage Current
Figure 4. Total Capacitance
−40°C
25°C
TA = 150°C
TA = 125°C
TA = 85°C
TA = 25°C
0.6
−55°C
150°C
125°C
100
1000
30
2520
IR, REVERSE CURRENT (A) IF, FORWARD CURRENT (mA)
14
12
10
8
6
4
2
0
g 4i 4 « jifi SOLDERING 0.91 0,036 P 7 236 0.093 419 0.165 ‘For addmcma‘ Imormahon on a detafls‘ p‘ease down‘oad me Mounting Techniques Refieren Semlcanducmvand J
BAT54T1G, SBAT54T1G
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4
PACKAGE DIMENSIONS
SOD−123
CASE 425−04
ISSUE G
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
1.22
0.048
0.91
0.036
2.36
0.093
4.19
0.165
ǒmm
inchesǓ
SCALE 10:1
STYLE 1:
PIN 1. CATHODE
2. ANODE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
E
b
DA
L
C
1
2
A1
DIM MIN NOM MAX
MILLIMETERS INCHES
A0.94 1.17 1.35 0.037
A1 0.00 0.05 0.10 0.000
b0.51 0.61 0.71 0.020
c
1.60
0.15
0.055
D1.40 1.80
E2.54 2.69 2.84 0.100
---
3.68 0.140
L0.25
3.86
0.010
HE
0.046
0.002
0.024
0.063
0.106
0.145
0.053
0.004
0.028
0.071
0.112
0.152
MIN NOM MAX
3.56
HE
---
--- ---
0.006
--- ---
--- ---
q
--- ---
q00
10 10
°°° °
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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P
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Phone: 421 33 790 2910
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Phone: 81−3−5817−1050
BAT54T1/D
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