SM05T1 Series, SZSM05T1G Datasheet by ON Semiconductor

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© Semiconductor Components Industries, LLC, 2003
August, 2018 − Rev. 9 1Publication Order Number:
SM05T1/D
SM05T1GSeries
ESD Protection Diode Array
Dual Common Anode
These dual monolithic silicon surge protection diodes are designed
for applications requiring transient overvoltage protection capability.
They are intended for use in voltage and ESD sensitive equipment such
as computers, printers, business machines, communication systems,
medical equipment and other applications. Their dual junction common
anode design protects two separate lines using only one package. These
devices are ideal for situations where board space is at a premium.
Specification Features:
SOT−23 Package Allows Either Two Separate Unidirectional
Configurations or a Single Bidirectional Configuration
Working Peak Reverse Voltage Range − 5.0 V to 36 V
Peak Power − 300 Watt (8/20 ms)
Low Leakage − 1.0 mA
Flammability Rating UL 94 V−0
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These are Pb−Free Devices
Mechanical Characteristics:
CASE: Void-Free, Transfer-Molded, Thermosetting Plastic Case
FINISH: Corrosion Resistant Finish, Easily Solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
Package Designed for Optimal Automated Board Assembly
Small Package Size for High Density Applications
Available in 8 mm Tape and Reel
Use the Device Number to Order the 7 Inch/3,000 Unit Reel
Replace the “T1” with “T3” in the Device Number to Order the
13 Inch/10,000 Unit Reel
www.onsemi.com
SOT−23
CASE 318
STYLE 12
13
2
PIN 1. CATHODE
2. CATHODE
3. ANODE
MARKING DIAGRAM
Device Package Shipping
ORDERING INFORMATION
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
SM05T1G SOT−23
(Pb−Free)
3,000/Tape & Reel
SM12T1G SOT−23
(Pb−Free)
3,000/Tape & Reel
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
1
xxM MG
G
xxM = Device Code
xx = 05, 12, 15, 24, 36
M = Date Code*
G= Pb−Free Package
(Note: Microdot may be in either location)
SM15T1G SOT−23
(Pb−Free)
3,000/Tape & Reel
SM24T1G SOT−23
(Pb−Free)
3,000/Tape & Reel
SM36T1G SOT−23
(Pb−Free)
3,000/Tape & Reel
SZSM05T1G SOT−23
(Pb−Free)
3,000/Tape & Reel
SM05T1G Series
www.onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Power Dissipation @ 20 ms (Note 1) @ TL 25°CPpk 300 W
IEC 61000−4−2 (ESD)
Air
Contact
±15
±26
kV
IEC 61000−4−4 (EFT) 40 A
IEC 61000−4−5 (Lightning) 12 A
Total Power Dissipation on FR−5 Board (Note 2) @ TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
°PD°
RqJA
225
1.8
556
°mW°
mW/°C
°C/W
Total Power Dissipation on Alumina Substrate (Note 3) @ TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
°PD
RqJA
300
2.4
417
°mW
mW/°C
°C/W
Junction and Storage Temperature Range TJ, Tstg − 55 to +150 °C
Lead Solder Temperature − Maximum (10 Second Duration) TL260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Non−repetitive current pulse per Figure 3
2. FR−5 = 1.0 x 0.75 x 0.62 in.
3. Alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina
NOTE: Other voltages may be available upon request
ELECTRICAL CHARACTERISTICS
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3)
Symbol Parameter
IPP Maximum Reverse Peak Pulse Current
VCClamping Voltage @ IPP
VRWM Working Peak Reverse Voltage
IRMaximum Reverse Leakage Current @ VRWM
VBR Breakdown Voltage @ IT
ITTest Current
QVBR Maximum Temperature Coefficient of VBR
IFForward Current
VFForward Voltage @ IF
ZZT Maximum Zener Impedance @ IZT
IZK Reverse Current
ZZK Maximum Zener Impedance @ IZK Uni−Directional
IPP
IF
V
I
IR
IT
VRWM
VCVBR VF
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Device*
Device
Marking
VRWM IR @ VRWM
VBR, Breakdown Voltage
IT
VC @
IPP =
1 Amp Max IPP
(Note 4)
Typical
Capacitance
(Volts) (pF)
(Volts) (mA) Min Max mA (Volts) (Amps)
Pin 1 to 3
@ 0 Volts
SM05T1G 05M 5 10 6.2 7.3 1.0 9.8 17 225
SM12T1G 12M 12 1.0 13.3 15.75 1.0 19 12 95
SM15T1G 15M 15 1.0 16.7 19.6 1.0 24 10 100
SM24T1G 24M 24 1.0 26.7 31.35 1.0 43 5.0 60
SM36T1G 36M 36 1.0 40.0 46.95 1.0 60 4.0 45
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. 8/20 ms pulse waveform per Figure 3
*Include SZ-prefix devices where applicable.
SM05T1G Series
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3
TYPICAL CHARACTERISTICS
0.1 10
10
Figure 1. Non−Repetitive Peak Pulse Power
versus Pulse Time
1
tp, PULSE DURATION (ms)
100 1000
1
0.1
0.01
Figure 2. Steady State Power Derating Curve
PPP
, PEAK PULSE POWER (kW)
0 25 50 75 100 125 150 175
300
250
200
150
100
50
0
TEMPERATURE (°C)
FR−5 BOARD
ALUMINA SUBSTRATE
PD, POWER DISSIPATION (mW)
100
Figure 3. 8/20 ms Pulse Waveform Figure 4. Typical Diode Capacitance (SM05)
01 524
250
130
90
BIAS VOLTAGE (VOLTS)
90
80
70
60
50
40
30
20
10
0020406080
t, TIME (ms)
tP
tr
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
HALF VALUE IRSM/2 @ 20 ms
% OF PEAK PULSE CURRENT
PEAK VALUE IRSM @ 8 ms
C, CAPACITANCE (pF)
210
170
Figure 5. Typical Diode Capacitance (SM12)
015812
100
90
40
30
20
10
0
BIAS VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
80
70
60
50
3
SM05T1G Series
www.onsemi.com
4
TYPICAL COMMON ANODE APPLICATIONS
A quad junction common anode design in a SOT−23
package protects four separate lines using only one package.
This adds flexibility and creativity to PCB design especially
when board space is at a premium. Two simplified examples
of surge protection applications are illustrated below.
KEYBOARD
TERMINAL
PRINTER
ETC.
FUNCTIONAL
DECODER
I/O
A
SM05T1G
Series
GND
Computer Interface Protection
B
C
D
Microprocessor Protection
I/O
RAM ROM
CLOCK
CPU
CONTROL BUS
ADDRESS BUS
DATA BUS
GND
VGG
VDD
SM05T1
Series
SM05T1G
Series
SM05T1G Series
www.onsemi.com
5
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AS
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
SOLDERING FOOTPRINT*
VIEW C
L
0.25
L1
e
EE
b
A
SEE VIEW C
DIM
AMIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.000
b0.37 0.44 0.50 0.015
c0.08 0.14 0.20 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.30 0.43 0.55 0.012
0.039 0.044
0.002 0.004
0.017 0.020
0.006 0.008
0.114 0.120
0.051 0.055
0.075 0.080
0.017 0.022
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
HE
0.35 0.54 0.69 0.014 0.021 0.027
c0 −−− 10 0 −−− 10
T°°°°
T
3X
TOP VIEW
SIDE VIEW END VIEW
2.90
0.80
DIMENSIONS: MILLIMETERS
0.90
PITCH
3X
3X 0.95
RECOMMENDED
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
STYLE 12:
PIN 1. CATHODE
2. CATHODE
3. ANODE
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage
may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
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arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer
is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of
any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and
do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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P
UBLICATION ORDERING INFORMATION
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USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
SM05T1/D
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