DMC2990UDJ Datasheet by Diodes Incorporated

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COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Device V(BR)DSS R
DS(ON) max ID max
TA = +25°C
Q1 20V
0.99 @ VGS = 4.5V 450mA
1.2 @ VGS = 2.5V 400mA
1.8 @ VGS = 1.8V 330mA
2.4 @ VGS = 1.5V 300mA
Q2 -20V
1.9 @ VGS = -4.5V -310mA
2.4 @ VGS = -2.5V -280mA
3.4 @ VGS = -1.8V -240mA
5 @ VGS = -1.5V -180mA
Description
This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
General Purpose Interfacing Switch
Power Management Functions
Analog Switch
Features and Benefits
Low On-Resistance
Very low Gate Threshold Voltage, 1.0V max
Low Input Capacitance
Fast Switching Speed
Ultra-Small Surface Mount Package 1mm x 1mm
Low Package Profile, 0.45mm Maximum Package height
ESD Protected Gate
Totally Lead-Free & Fully RoHS compliant (Note 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3 & 4)
Qualified to AEC-Q101 standards for High Reliability
Mechanical Data
Case: SOT963
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See diagram
Terminals: Finish Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.027 grams (approximate)
Ordering Information (Note 5 & 6)
Part Number Case Packaging
DMC2990UDJ-7 SOT963 10K/Tape & Reel
DMC2990UDJ-7B SOT963 10K/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
5. The options -7 and -7B stand for different taping orientations. Please refer to Diodes website at http://www.diodes.com for further details.
6. For packaging details, go to our website at http”//www.diodes.com/products/packages.html
Marking Information
D1 = Product Type Marking Code
ESD PROTECTED
Top View
SOT963
D1
Top View
Schematic and
Transistor Dia
g
ram
S
2
D
2
D
1
S
1
G
2
G
1
e3
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Maximum Ratings Q1 N-CHANNEL (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage VDSS 20 V
Gate-Source Voltage VGSS ±8 V
Continuous Drain Current (Note 7) VGS = 4.5V
Steady
State
TA = +25°C
TA = +70C ID 450
350 mA
t<5s TA = +25C
TA = +70C ID 520
410 mA
Continuous Drain Current (Note 7) VGS = 1.8V
Steady
State
TA = +25C
TA = +70C ID 330
260 mA
t<5s TA = +25C
TA = +70C ID 390
310 mA
Maximum Continuous Body Diode Forward Current (Note 7) IS 440 mA
Pulsed Drain Current (Note 8) IDM 800 mA
Maximum Ratings Q2 P-CHANNEL (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage VDSS -20 V
Gate-Source Voltage VGSS ±8 V
Continuous Drain Current (Note 5) VGS = -4.5V
Steady
State
TA = +25C
TA = +70C ID -310
-240 mA
t<5s TA = +25C
TA = +70C ID -360
-280 mA
Continuous Drain Current (Note 5) VGS = -1.8V
Steady
State
TA = +25C
TA = +70C ID -240
-190 mA
t<5s TA = +25C
TA = +70C ID -280
-220 mA
Maximum Continuous Body Diode Forward Current (Note 7) IS -440 mA
Pulsed Drain Current (Note 8) IDM -800 mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 7) PD 350 mW
Thermal Resistance, Junction to Ambient (Note 7) Steady State RJA 360 °C/W
t<5s 270 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Notes: 7. Device mounted on FR-4 PCB, with minimum recommended pad layout.
8. Device mounted on minimum recommended pad layout test board, 10s pulse duty cycle = 1%.
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Electrical Characteristics Q1 N-CHANNEL (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage BVDSS 20 - - V
VGS = 0V, ID = 250A
Zero Gate Voltage Drain Current @TC = +25°C IDSS - - 100
nA VDS = 16V, VGS = 0V
- - 50 VDS = 5V, VGS = 0V
Gate-Source Leakage IGSS - - ±100 nA
VGS = ±5V, VDS = 0V
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage VGS
(
th
)
0.4 - 1.0 V
VDS = VGS, ID = 250A
Static Drain-Source On-Resistance RDS(ON)
- 0.60 0.99
VGS = 4.5V, ID = 100mA
- 0.75 1.2 VGS = 2.5V, ID = 50mA
- 0.90 1.8 VGS = 1.8V, ID = 20mA
- 1.2 2.4 VGS = 1.5V, ID = 10mA
- 2.0 - VGS = 1.2V, ID = 1mA
Forward Transfer Admittance |Yfs| 180 850 - mS
VDS = 5V, ID = 125mA
Diode Forward Voltage VSD - 0.6 1.0 V
VGS = 0V, IS = 10mA
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance Ciss - 27.6 - pF
VDS = 15V, VGS = 0V,
f = 1.0MHz
Output Capacitance Coss - 4.0 - pF
Reverse Transfer Capacitance Crss - 2.8 - pF
Gate Resistance RG - 113 - VDS = 0V, VGS = 0V, f = 1.0MHz
Total Gate Charge Q
g
- 0.5 - nC
VGS = 4.5V, VDS = 10V,
ID = 250mA
Gate-Source Charge Q
g
s - 0.07 - nC
Gate-Drain Charge Q
g
d - 0.07 - nC
Turn-On Delay Time tD
(
on
)
- 4.0 - ns
VDD = 15V, VGS = 4.5V,
RL = 47, RG = 2,
ID = 200mA
Turn-On Rise Time t
r
- 3.3 - ns
Turn-Off Delay Time tD
(
off
)
- 19.0 - ns
Turn-Off Fall Time tf - 6.4 - ns
Electrical Characteristics Q2 P-CHANNEL (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage BVDSS -20 - - V
VGS = 0V, ID = -250A
Zero Gate Voltage Drain Current @TC = +25°C IDSS - - 100
nA VDS = -16V, VGS = 0V
- - 50 VDS = -5V, VGS = 0V
Gate-Source Leakage IGSS - - ±100 nA
VGS = ±5V, VDS = 0V
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage VGS
(
th
)
-0.4 - -1.0 V
VDS = VGS, ID = -250A
Static Drain-Source On-Resistance RDS(ON)
- 1.2 1.9
VGS = -4.5V, ID = -100mA
- 1.5 2.4 VGS = -2.5V, ID = -50mA
- 2.1 3.4 VGS = -1.8V, ID = -20mA
- 2.5 5 VGS = -1.5V, ID = -10mA
- 4.0 - VGS = -1.2V, ID = -1mA
Forward Transfer Admittance |Yfs| 100 450 - mS
VDS = -5V, ID = -125mA
Diode Forward Voltage VSD - -0.6 -1.0 V
VGS = 0V, IS = -10mA
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance Ciss - 28.7 - pF
VDS = -15V, VGS = 0V,
f = 1.0MHz
Output Capacitance Coss - 4.2 - pF
Reverse Transfer Capacitance Crss - 2.9 - pF
Gate Resistance RG - 399 - VDS = 0V, VGS = 0V, f = 1.0MHz
Total Gate Charge Q
g
- 0.4 - nC
VGS = -4.5V, VDS =- 10V,
ID = -250mA
Gate-Source Charge Q
g
s - 0.08 - nC
Gate-Drain Charge Q
g
d - 0.06 - nC
Turn-On Delay Time tD
(
on
)
- 5.8 - ns
VDD = -15V, VGS = -4.5V,
RG = 2, ID = -200mA
Turn-On Rise Time t
r
- 5.7 - ns
Turn-Off Delay Time tD
(
off
)
- 31.1 - ns
Turn-Off Fall Time tf - 16.4 - ns
Notes: 9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.
u z .‘E 9 “F 2 o u an 3 o m E‘ on 0, ac \ p \ DMC2990UDJ Documem number 0535431 Rev 972 STAN c R , DR N-SOURC ON-R \\ \\ \\
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Q1 N-CHANNEL
0
0.2
0.4
0.6
0.8
0 0.5 1 1.5 2 2.5 3 3.5 4
V , DRAIN-SOURCE VOLTAGE (A)
Fig. 1 Typical Output Characteristics
DS
I , DRAIN CURRENT (A)
D
V = 1.2V
GS
V
GS
= 1.5V
V
GS
= 2.0V
V
GS
= 2.5V
V
GS
= 3.0V
V
GS
=4.0V
V
GS
= 4.5V
0
0.2
0.4
0.6
0.8
0 0.5 1 1.5 2 2.5 3
V , GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
GS
V = 5.0V
DS
T = -55°C
A
T =
A
25°C T =
A
85°C
T =
A
125°C
T =
A
150°C
I , DRAIN CURRENT(A)
D
0.2
0.4
0.6
0.8
1.0
1.2
0 0.2 0.4 0.6 0.8
I , DRAIN-SOURCE CURRENT
Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage
D
, D
AI
-S
E
-
ESIS
A
E ( )
DS(ON)
V = 1.8V
GS
V = 2.5V
GS
V = 4.5V
GS
0
0.2
0.4
0.6
0.8
1.0
1.2
0 0.2 0.4 0.6 0.8 1.0
T =
A
-55°C
T =
A
25°C
T =
A
85°C
T = 150°C
A
T =
A
125°C
I DRAIN CURRENT (A)
Fig. 4 Typical On-Resistance vs. Drain Current and Temperature
D
, D
AIN-S
E
N-
ESIS
AN
E ( )
DS(ON)
V = 4.5V
GS
0.6
0.8
1.0
1.2
1.4
1.6
-50-25 0 25 50 75100125150
T , JUNCTION TEMPERATURE( C)
Fig. 5 On-Resistance Variation with Temperature
J
R , DRAIN-SOURCE
ON-RESISTANCE (Normalized)
DS(ON)
I = 150mA
D
I = 300mA
D
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
0
0.2
0.4
0.6
0.8
1.0
1.2
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE( C)
Fig. 6 On-Resistance Variation with Temperature
J
I = 150mA
D
I = 300mA
D
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DMC2990UDJ
Document number: DS35481 Rev. 9 - 2
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0
0.2
0.4
0.6
0.8
1.0
1.2
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE( C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
J
V , GATE THRESHOLD VOLTAGE (V)
GS(TH)
I = 250µA
D
I = 1mA
D
0
0.2
0.4
0.6
0.8
1.0
0 0.2 0.4 0.6 0.8 1.0 1.2
T = 25°C
A
V , SOURCE- DRAIN VOLTAGE (V)
Fig. 8 Diodes Forward Voltage vs. Current
SD
I, S
O
U
R
C
E
C
U
R
R
EN
T
(A)
S
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Junction Capacitance
DS
C
T
, J
U
N
C
T
I
O
N
C
A
P
A
C
I
T
AN
C
E (p
F
)
50
40
30
20
10
0
10 15 2050
f = 1MHz
C
iss
C
oss
C
rss
1
10
100
1,000
2 4 6 8 10 12 14 16 18 20
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Drain-Source Leakage Current vs. Voltage
DS
I , LEAKAGE CURRENT (nA)
DSS
T =
A
25°C
T =
A
85°C
T =
A
125°C
T = 150°C
A
0
2
4
6
8
0 0.2 0.4 0.6 0.8 1
Q - (nC)
Fig. 11 Gate Charge Characteristics
G
V = 10V
DS
V,
G
A
T
E-S
O
U
R
C
E V
O
L
T
A
G
E (V)
GS
0.001
0.1
1
110100
P = 10s
W
DC
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W
P = 10µs
W
T = 150°C
T = 25°C
Single Pulse
J(MAX)
A
0.01
0.1
V , DRAIN-SOURCE VOLTAGE
Fig. 12 SOA, Safe Operation Area
DS
I , DRAIN CURRENT (A)
D
R
Limited
DS(on)
‘ n: O m 0 n: 3 O J at El n: o W EC 3 x O m v55: 45v E / EC / DMCZQQUUDJ Documem number 0535431 Rev 972 ON -R DR N-SOUR R :75 ov :‘5 \\
DMC2990UDJ
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Q2 P-CHANNEL
0
0.2
0.4
0.6
0.8
0 0.5 1 1.5 2 2.5 3 3.5 4
-V , DRAIN-SOURCE VOLTAGE (V)
Fig. 13 Typical Output Characteristics
DS
-I , DRAIN CURRENT (A)
D
0
0.2
0.4
0.6
0.8
0 0.5 1 1.5 2 2.5 3
-V , GATE-SOURCE VOLTAGE (V)
Fig. 14 Typical Transfer Characteristics
GS
-I , DRAIN CURRENT(A)
D
V = -5.0V
DS
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
3.5 4
-I , DRAIN-SOURCE CURRENT
Fig. 15 Typical On-Resistance vs.
Drain Current and Gate Voltage
D
R
, D
R
AIN-S
O
U
R
CE
O
N-
R
ESISTANCE ( )
DS(ON)
0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
0 0.2 0.4 0.6 0.8
V = -1.8V
GS
V = -4.5V
GS
0
0.4
1.6
1.2
2.0
0 0.2 0.4 0.6 0.8
V = -4.5V
GS
-I DRAIN CURRENT (A)
Fig. 16 Typical On-Resistance vs.
Drain Current and Temperature
D
R
, D
R
AIN-S
O
U
R
CE
O
N-
R
ESISTANCE ( )
DS(ON)
T = 150°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
T = 125°C
A
0.8
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE( C)
Fig. 17 On-Resistance Variation with Temperature
J
, D
AI
-S
E
ON-RESISTANCE (Normalized)
DS(ON)
0.5
0.7
0.9
1.1
1.3
1.5
1.7
V = -2.5V,
I = -150mA
GS
D
V = -4.5V,
I = -300mA
GS
D
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE( C)
Fig. 18 On-Resistance Variation with Temperature
J
0
0.4
0.8
1.2
1.6
2.0
2.4
V = -2.5V,
I = -150mA
GS
D
V = -4.5V,
I = -300mA
GS
D
// // // // SOURCE CURRENT c UNCTIONC F‘ CITANC 1pF OLTAG OURC GAT DMC2990UDJ (on; Documem number 0535431 Rev 972 www.d descom
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Document number: DS35481 Rev. 9 - 2
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0
0.2
0.4
0.6
0.8
1.0
1.
2
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE( C)
Fig. 19 Gate Threshold Variation vs. Ambient Temperature
J
-V , GATE THRESHOLD VOLTAGE (V)
GS(TH)
I = -250µA
D
I = -1mA
D
0
0.2
0.4
0.6
0.8
0.4 0.6 0.8 1.0 1.2
T = 25°C
A
V , SOURCE- DRAIN VOLTAGE (V)
Fig. 20 Diodes Forward Voltage vs. Current
SD
I, S
E
EN
(A)
S
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 21 Typical Junction Capacitance
DS
C
, J
U
N
C
T
I
O
N
C
A
P
A
C
I
T
AN
C
E (p
F
)
T
f = 1MHz
C
iss
C
oss
C
rss
0
10
20
30
40
50
02 4 6 8 10
1
10
100
1,000
0 4 6 8 10 12 14 16 18 20
-V , DRAIN-SOURCE VOLTAGE (V)
Fig. 22 Typical Leakage Current vs.
Drain-Source Voltage
DS
-I , LEAKAGE CURRENT (nA)
DSS
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = -25°C
A
2
Q , TOTAL GATE CHARGE (nC)
Fig. 23 Gate Charge Characteristics
G
0
1
2
3
4
5
0 2 4 6 8 1012141618
V = 10V, I = -4.5A
DS
D
-V ,
A
E S
E V
L
A
E (V)
GS
0.1 1 10 100
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 24 SOA, Safe Operation Area
P = 10s
W
P = DC
W
P=1s
W
P = 100ms
W
I , DRAIN CURRENT (A)
D
T = 150 C
T= 25C
Single Pulse
J(MAX)
A
R
Limited
DS(ON)
P=1ms
W
P = 100µs
W
0.001
0.01
0.1
1
10
P = 10µs
W
P = 10ms
W
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0.001
0.01
0.1
1
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
t1, PULSE DURATION TIME (sec)
Fig. 25 Transient Thermal Resistance
D = 0.9
D = 0.7
D = 0.5
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
R(t), TRANSIENT THERMAL RESISTANCE
R (t) = r(t)*R
R = 356C/W
Duty Cycle, D = t1/t2

JA JA
JA
Package Outline Dimensions
Suggested Pad Layout
SOT963
Dim Min Max Typ
A 0.40 0.50 0.45
A1 0 0.05 -
c 0.120 0.180 0.150
D 0.95 1.05 1.00
E 0.95 1.05 1.00
E1 0.75 0.85 0.80
L 0.05 0.15 0.10
b 0.10 0.20 0.15
e 0.35 Typ
e1 0.70 Typ
All Dimensions in mm
Dimensions Value (in mm)
C 0.350
X 0.200
Y 0.200
Y1 1.100
L
c
E
D
e1
e
E1
b (6 places)
A
A1
Y1
Y (6X)
CC
X (6X)
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IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2013, Diodes Incorporated
www.diodes.com

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