RTR030N05 Datasheet by Rohm Semiconductor

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ROHII'I (1) Gate (2) Source (1) (3) Dram w *1 ESD Protecmn Diode ‘2 Body mode
RTR030N05
  Nch 45V 3A Middle Power MOSFET    Datasheet
llOutline
VDSS 45V SOT-346T
 
RDS(on)(Max.) 67 SC-96
ID±3A TSMT3
PD1.0W  
      
llInner circuit
llFeatures
1) Low on-resistance
2) Built-in G-S protection diode
3) Small surface mount package(TSMT3)
llPackaging specifications
Type
Packing Embossed
Tape
Reel size (mm) 180
llApplication Tape width (mm) 8
Switching Basic ordering unit (pcs) 3000
Taping code TL
Marking PV
llAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter Symbol Value Unit
Drain - Source voltage VDSS 45 V
Continuous drain current ID±3 A
Pulsed drain current IDP*1 ±12 A
Gate - Source voltage VGSS ±12 V
Power dissipation PD*2 1.0 W
PD*3 0.76 W
Junction temperature Tj150
Operating junction and storage temperature range Tstg -55 to +150
                                              
                                              
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© 2015 ROHM Co., Ltd. All rights reserved. 1/11 20150918 - Rev.001      
RTR030N05                            Datasheet
llThermal resistance                                    
Parameter Symbol Values Unit
Min. Typ. Max.
Thermal resistance, junction - ambient
RthJA
*2 - - 125 /W
RthJA
*3 - - 165 /W
llElectrical characteristics (Ta = 25°C)
Parameter Symbol Conditions Values Unit
Min. Typ. Max.
Drain - Source breakdown
voltage V(BR)DSS VGS = 0V, ID = 1mA 45 - - V
Breakdown voltage
temperature coefficient
 
ΔV(BR)DSS
 
ID = 1mA - 46.8 - mV/
 
 ΔTj    referenced to 25
Zero gate voltage
drain current IDSS VDS = 45V, VGS = 0V - - 1 μA
Gate - Source leakage current IGSS VGS = ±12V, VDS = 0V - - ±10 μA
Gate threshold voltage VGS(th) VDS = 10V, ID = 1mA 0.5 - 1.5 V
Gate threshold voltage
temperature coefficient
 ΔVGS(th)  
ID = 1mA - -3.9 - mV/
 
 ΔTj    referenced to 25
Static drain - source
on - state resistance RDS(on)*4
VGS = 4.5V, ID = 3A - 48 67
VGS = 4V, ID = 3A - 53 74
VGS = 2.5V, ID = 3A - 68 95
Gate resistance RG f = 1MHz, open drain - 6.7 - Ω
Forward Transfer
Admittance |Yfs|*4 VDS = 10V, ID = 3A 2.8 - - S
*1 Pw10μs, Duty cycle1%
*2 Mounted on a ceramic board (30x30x0.8mm)
*3 Mounted on a FR4 (25x25x0.8mm)
*4 Pulsed
                                                                                           
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© 2015 ROHM Co., Ltd. All rights reserved. 2/11 20150918 - Rev.001
RTR030N05                 Datasheet
llElectrical characteristics (Ta = 25°C)
Parameter Symbol Conditions
Values
Unit
Min. Typ. Max.
Input capacitance Ciss VGS = 0V - 510 -
pFOutput capacitance Coss VDS = 10V - 110 -
Reverse transfer capacitance Crss f = 1MHz - 55 -
Turn - on delay time td(on)*4 VDD 25V,VGS = 4.5V - 12 -
ns
Rise time tr*4 ID = 1.5A - 19 -
Turn - off delay time td(off)*4 RL 16.6Ω - 34 -
Fall time tf*4 RG = 10Ω - 26 -
llGate charge characteristics (Ta = 25°C)
Parameter Symbol Conditions
Values
Unit
Min. Typ. Max.
Total gate charge Qg*4
VDD 25V,
ID = 3A,
VGS = 4.5V
- 6.2 -
nCGate - Source charge Qgs*4 - 1.6 -
Gate - Drain charge Qgd*4 - 1.4 -
llBody diode electrical characteristics (Source-Drain) (Ta = 25°C)
Parameter Symbol Conditions
Values
Unit
Min. Typ. Max.
Continuous forward current IS
Ta = 25
- - 0.8 A
Pulse forward current ISP*1 - - 12 A
Forward voltage VSD*4 VGS = 0V, IS = 3A - - 1.2 V
                                               
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© 2015 ROHM Co., Ltd. All rights reserved. 3/11 20150918 - Rev.001
120 a3 T‘ 100 X m E a? 50 E n. E 60 .9 iii .9- .6 4° 0 g 20 O n. o o .0 0.01 Normalized Transient Thermal Resistance : r“) 0.001 001101 50 103 150 2CD Junction Temperature : T, [“0] Duty Cycle lop D=1 D=0.5 D=0 1 D=0 05 D=D o1 boltem Signle Rmu-a)=125“CNv Rlnura)(t)=r(l)lenu-a) mourned on ceramic board (30mm x 30mm x DBmm) 0m 1 mm Pulse Width : Pw [5] Drain Current : ID [A] Peak Transient Power: F‘(W) 100 Overan'on in this area .5 limited bYRBJun) (Vm = 4 5V) 1o 7w:1aous PM: W, 1 DC Operation 0 1 13:25 "C m; lums Single Pulse MDIHI'BG an a Deramlcboam (30mmx30mmx 0.5mm) 0.01 0.1 1 10 100 Drain - Source Volkage : V95 [V] 10000 Ta = 25%: Single Pulse 1000 100 10 1 0.0001 0.01 1 100 Pulse Width : Pw [s]
RTR030N05                 Datasheet
llElectrical characteristic curves
Fig.1 Power Dissipation Derating Curve Fig.2 Maximum Safe Operating Area
Fig.3 Normalized Transient Thermal
    Resistance vs. Pulse Width
Fig.4 Single Pulse Maximum Power
    dissipation
                                                
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© 2015 ROHM Co., Ltd. All rights reserved. 4/11 20150918 - Rev.001
Drain Current : ID [A] Normarize Drain - Source Breakdown Voltage (amass [V] 2.5 1.5 0.5 0 80 50 z. o 20 r r v65: 4 5v v65: 4 0v 7 Ves=2-5V v65: 1.8V ves=2 0v __,,_. 3:25” o , Pulsed l l 0 0.1 0.2 03 0.4 0.5 06 0.7 0.8 0,9 1 Drain - Source Voltage : VDSM H vGS = W ID: 1mA pulsed /_,—————"" -50 0 50 100 150 Junction Temperature : T‘ [”C] _-= E 9 ‘5 0 .E E D E 9 ‘5 0 .E E D Ta=25° c V65: 45V Pulsed ‘W/Tcl'f 05 0 012345676910 Drain - Source Voltage : VDS [V] 10 VDs= 10V Pulsed 1 Ta: 125 °c Ta= 75°C Ta= 25"C T=-2° 01 a 50 0.01 0.001 D 0.5 1 15 2 2.5 Gate - Source Voltage : Ves [V]
RTR030N05                 Datasheet
llElectrical characteristic curves
Fig.5 Typical Output Characteristics(I) Fig.6 Typical Output Characteristics(II)
Fig.7 Breakdown Voltage vs.
     Junction Temperature
Fig.8 Typical Transfer Characteristics
                                                
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© 2015 ROHM Co., Ltd. All rights reserved. 5/11 20150918 - Rev.001
Gate Threshold Voltage : V633") [V] ID/ID max. [%] Drain Current Dissipation : vDs = 10v b=1mA > pulsed 2 \ 1 \\ \ o -50 0 so 100 150 Junction Temperature : T, [“C] 120 100 so so 40 20 o ,25 O 25 50 75 100 125 150 Junction Temperature : T, [”C] Fowvard Transter Admittance : |Y,s| [S] Static Drain - Source Orr-State Resistance I 001 200 150 0'1 1 10 Drain Current: ID [A] Ta=25'C Puised \flD: 1.;5A \— |u= 3.0A 0 2 4 6 8 10 Gate - Source Voltage : V65 M
RTR030N05                 Datasheet
llElectrical characteristic curves
Fig.9 Gate Threshold Voltage vs.
     Junction Temperature
Fig.10 Forward Transfer Admittance vs.
     Drain Current
Fig.11 Drain Current Derating Curve Fig.12 Static Drain - Source On - State
   Resistance vs. Gate Source Voltage
                                                
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© 2015 ROHM Co., Ltd. All rights reserved. 6/11 20150918 - Rev.001
Static Drain - Source Orr-Slate Resistance 1 Rnstm) [m0] 100 ED 60 40 20 0 V65 = 4.5V to = 3.0A pulsed -50 -25 0 25 50 75 100 125 Junction Temperature : 1] [°C] 150 Static Drain - Source Orr-Slate Resistance 1000 3 RDs(an) [m0] 1O 001 0.1 1 Drain Current: In [A] 10
RTR030N05                 Datasheet
llElectrical characteristic curves
Fig.13 Static Drain - Source On - State
   Resistance vs. Junction Temperature
Fig.14 Static Drain - Source On - State
     Resistance vs. Drain Current (I)
                                                
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© 2015 ROHM Co., Ltd. All rights reserved. 7/11 20150918 - Rev.001
Static Drain - Source Orr-State Resistance Static Drain - Source Orr-State Resistance 1000 i RDSkm) [m0] 10 1000 i RDSkm) [m0] 10 001 0. 01 Ta=125°C Ta=75”C Ta=25°0 Ta= -25“C 01 1 10 Drain Current: In [A] Ta= 1 25"C Ta= 75°C Ta= 25°C Ta= -25”C 0.1 1 10 Drain Current: In [A] Static Drain - Source Orr-State Resistance 1000 Ta=125°C Ta= 75”C Ta=25°C a Ta= -25 C E. 5: 10 0 8 DC 10 0.01 0.1 1 Drain Current: ID [A] 1O
RTR030N05                 Datasheet
llElectrical characteristic curves
Fig.15 Static Drain - Source On - State
     Resistance vs. Drain Current (II)
Fig.16 Static Drain - Source On - State
     Resistance vs. Drain Current (IlI)
Fig.17 Static Drain - Source On - State
     Resistance vs. Drain Current (IV)
                                                
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© 2015 ROHM Co., Ltd. All rights reserved. 8/11 20150918 - Rev.001
Capacitance : C [pF] Gate - Source Voltage : V55 [V] 10(X)0 10(X) 100 10 O. 01 0,1 1 10 Drain - Source Voltage : VDS [V] 100 0 1 2 3 4 5 G Total Gate Charge : Qg [n0] 7 Switching Time : t [ns] Source Current: Is [A] 10000 1000 100 10 Mon) 1 0.01 0.1 1 10 Drain Current: ID [A] 10 1 0.1 0 01 0 0.5 1 1.5 Source - Drain Voltage : VSD [V]
RTR030N05                 Datasheet
llElectrical characteristic curves
Fig.18 Typical Capacitance vs.
      Drain - Source Voltage
Fig.19 Switching Characteristics
Fig.20 Dynamic Input Characteristics Fig.21 Source Current vs.
      Source Drain Voltage
                                                
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© 2015 ROHM Co., Ltd. All rights reserved. 9/11 20150918 - Rev.001
Pmse wldth Ves Vus D. U .T, V Re DD 90% 90% M“; 1, [mm '1 an fl V55 Va: 01 V55 lemma 4» D,U.T. Qua 0“ Vun Charge
RTR030N05                             Datasheet
llMeasurement circuits
Fig. 1-1 SWITCHING TIME MEASUREMENT CIRCUIT Fig. 1-2 SWITCHING WAVEFORMS
Fig. 2-1 GATE CHARGE MEASUREMENT CIRCUIT Fig. 2-2 GATE CHARGE WAVEFORM
                                                                                           
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© 2015 ROHM Co., Ltd. All rights reserved. 10/11 20150918 - Rev.001
SOT-346T 30-96 ( TSMTS ) *7, T 2 _ w v b2 Pattern of terminal position areas [Not a panern of soldermg pads] DIM MILIMETERS INCHES MIN MAX MIN MAX A - 1 00 - 0.039 A1 000 0 10 0,000 0004 A2 0.75 095 0.030 0.037 A3 0.25 0.010 b 0.35 050 0.014 0.020 0 0,10 020 0,004 0.010 D 200 300 0,110 0.110 E 1.50 180 0,059 0,071 e 0.95 0037 HE 260 a 00 0,102 0,118 LI 030 060 0012 0024 Lu 0,40 0 70 0,016 0,020 0 0,05 025 0,002 0,010 x - 0 20 - 0 008 DIM MILIMETERS INCHES MIN MAX MIN MAX b2 0 7o , 0028 21 2.10 0.083 n , | 090 , | o 035 Dimension in mm/inches
RTR030N05                           Datasheet
llDimensions
                                               
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© 2015 ROHM Co., Ltd. All rights reserved. 11/11 20150918 - Rev.001
Datasheet
Datasheet
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Notice-PGA-E Rev.001
© 2015 ROHM Co., Ltd. All rights reserved.
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CLASS CLASS CLASSb CLASS
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Precaution for Mounting / Circuit board design
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For details, please refer to ROHM Mounting specification
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