DMN2400UV Datasheet by Diodes Incorporated

View All Related Products | Download PDF Datasheet
woes” ®' :l :I :I E59 0 3 m |_||_||_| HUI—I |_||_||_| |_l|_||_l DMN2400UV 1o! 6 Document number DSCNESZ Rev 7 , 2 WWW.diOdeS.COm
DMN2400UV
Document number: DS31852 Rev. 7 - 2
1 of 6
www.diodes.com January 2011
© Diodes Incorporated
DMN2400UV
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Features
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected up to 2kV
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Qualified to AEC-Q101 standards for High Reliability
Mechanical Data
Case: SOT-563
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.006 grams (approximate)
Ordering Information (Note 3)
Part Number Case Packaging
DMN2400UV-7 SOT-563 3,000/Tape & Reel
DMN2400UV-13 SOT-563 10,000/Tape & Reel
Notes: 1. No purposefully added lead.
2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Date Code Key
Year 2009 2010 2011 2012 2013 2014 2015
Code W X Y Z A B C
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
SOT-563
Top View Top View
Internal Schematic
ESD PROTECTED TO 2kV
Bottom View
S
1
D
1
D
2
S
2
G
1
G
2
24N YM
24N and NAB = Marking Code
YM = Date Code Marking
Y = Year (ex: W = 2009)
M = Month (ex: 9 = September)
NAB YM
m5” DMN2400UV 2006 Datumenl number D531852 Rev 7 , 2 WWW.di0dES.CDm
DMN2400UV
Document number: DS31852 Rev. 7 - 2
2 of 6
www.diodes.com January 2011
© Diodes Incorporated
DMN2400UV
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol Value Units
Drain-Source Voltage VDSS 20 V
Gate-Source Voltage VGSS ±12 V
Continuous Drain Current (Note 4) Steady
State TA = 25°C
TA = 85°C ID 1.33
0.84 A
Pulsed Drain Current IDM 3 A
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Value Units
Total Power Dissipation (Note 4) PD 530 mW
Thermal Resistance, Junction to Ambient R
θ
JA 233.8 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage BVDSS 20 - - V
VGS = 0V, ID = 250μA
Zero Gate Voltage Drain Current TJ = 25°C IDSS - - 100 nA
VDS = 20V, VGS = 0V
Gate-Source Leakage IGSS - - ±1.0
μA VGS = ±4.5V, VDS = 0V
- - ±50 VGS = ±10V, VDS = 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage VGS
(
th
)
0.5 - 0.9 V
VDS = VGS, ID = 250μA
Static Drain-Source On-Resistance RDS (ON)
- 0.3 0.48
Ω
VGS = 5.0V, ID = 200mA
- 0.35 0.5 VGS = 4.5V, ID = 600mA
- 0.45 0.7 VGS = 2.5V, ID = 500mA
- 0.55 0.9 VGS = 1.8V, ID = 350mA
- 0.65 1.5 VGS = 1.5V, ID = 50mA
Forward Transfer Admittance |Yfs| - 1.4 - S
VDS = 10V, ID = 400mA
Diode Forward Voltage (Note 5) VSD 0.7 1.2 V VGS = 0V, IS = 150mA,
f = 1.0MHz
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance Ciss - 36.0 - pF VDS =16V, VGS = 0V,
f = 1.0MHz
Output Capacitance Coss - 5.7 - pF
Reverse Transfer Capacitance Crss - 4.2 - pF
Gate Resistance R
g
- 68 - Ω VDS = 0V, VGS = 0V,
Total Gate Charge Q
g
- 0.5 - nC VGS =4.5V, VDS = 10V,
ID =250mA
Gate-Source Charge Q
g
s - 0.07 - nC
Gate-Drain Charge Q
g
d - 0.1 - nC
Turn-On Delay Time tD
(
on
)
- 4.06 - ns
VDD = 10V, VGS = 4.5V,
RL = 47, RG = 10,
ID = 200mA
Turn-On Rise Time t
r
- 7.28 - ns
Turn-Off Delay Time tD
(
off
)
- 13.74 - ns
Turn-Off Fall Time tf - 10.54 - ns
Notes: 4. Device soldered onto FR-4 PCB, minimum recommended soldering pad dimensions (25.4mm x 25.4mm x1.6mm, 2oz Cu pad: 0.18mm2 x 6).
5. Short duration pulse test used to minimize self-heating effect.
6. Guaranteed by design. Not subject to product testing.
January 2011 © Dmdes \ncuvpmalefl E 550; E. 025m «:20 omaowz me m 0239 $20 8582, mm. H PZMIIDO 2, ID OEDOW‘Z, KEV m
DMN2400UV
Document number: DS31852 Rev. 7 - 2
3 of 6
www.diodes.com January 2011
© Diodes Incorporated
DMN2400UV
0
0.5
1.0
1.5
2.0
012345
Fig. 1 Typical Output Characteristics
V , DRAIN-SOURCE VOLTAGE (V)
DS
I, D
R
AI
N
C
U
R
R
E
N
T
(A)
D
V = 1.5V
GS
V = 2.0V
GS
V = 2.5V
GS
V = 4.5V
GS
V = 1.2V
GS
V = 1.8V
GS
0
0.5
1.0
1.5
0 0.5 1 1.5 2 2.5 3
I, D
R
AIN
C
U
R
R
EN
T
(A)
D
Fig. 2 Typical Transfer Characteristics
V , GATE SOURCE VOLTAGE (V)
GS
V = 5V
DS
T = -55°C
A
T = 25°C
A
T = 125°C
A
T = 150°C
A
T = 85°C
A
0
0.4
0.8
1.2
1.6
2.0
0 0.4 0.8 1.2 1.6 2
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
I , DRAIN-SOURCE CURRENT (A)
D
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
Ω
V = 1.8V
GS
V = 4.5V
GS
V = 2.5V
GS
V = 1.5V
GS
V = 5.0V
GS
0
0.2
0.4
0.6
0.8
0 0.4 0.8 1.2 1.6
I , DRAIN CURRENT (A)
Fig. 4 Typical Drain-Source On-Resistance
vs. Drain Current and Temperature
D
R
, D
R
AI
N
-S
O
U
R
C
E
O
N
-
R
ESIS
T
A
N
C
E ( )
DS(ON)
Ω
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 4.5V
GS
Fig. 5 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
J
0.6
0.8
1.0
1.2
1.4
1.6
R
, D
R
AIN-S
O
U
R
C
E
ON-RESISTANCE (NORMALIZED)
DS(ON)
V = 2.5.V
I = 500mA
GS
D
V = 4.5V
I = 1.0A
GS
D
0
0.2
0.4
0.6
0.8
R
, D
R
AI
N
-S
O
U
R
C
E
O
N
-
R
ESIS
T
A
N
C
E ( )
DS(ON)
Ω
Fig. 6 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
J
V = 4.5V
I = 1.0A
GS
D
V = 2.5V
I = 500mA
GS
D
// OURCE CURRENT \ 1pF GE CURR NT C CAPAC TANC VDRNNASOURC DMN2400UV {cl 8 January 2011 Document number nsmsg Rev, 7 7 2 www.d|odes.com mm; \ncuvpmalefl
DMN2400UV
Document number: DS31852 Rev. 7 - 2
4 of 6
www.diodes.com January 2011
© Diodes Incorporated
DMN2400UV
0
0.2
0.4
0.6
0.8
1.0
1.2
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
V , GATE THRESHOLD VOLTAGE (V)
GS(TH)
I = 250µA
D
I = 1mA
D
0
0.4
0.8
1.2
1.6
0 0.4 0.6 0.8 1.0 1.2
V , SOURCE-DRAIN VOLTAGE (V)
SD
Fig. 8 Diode Forward Voltage vs. Current
0.2
I, S
O
U
R
C
E
C
U
R
R
EN
T
(A)
S
T = 25°C
A
0
10
20
30
40
50
60
0 5 10 15 20
Fig. 9 Typical Capacitance
V , DRAIN-SOURCE VOLTAGE (V)
DS
C
,
C
A
P
A
C
I
T
A
N
C
E (p
F
)
f = 1MHz
C
iss
C
oss
C
rss
0.1
1
10
100
1,000
2 4 6 8 10 12 14 16 18 20
Fig. 10 Typical Drain-Source Leakage Current
vs. Drain-Source Voltage
V , DRAIN-SOURCE VOLTAGE (V)
DS
I, D
R
AIN-S
O
U
R
C
E LEAKA
G
E
C
U
R
R
EN
T
(nA)
DSS
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
T = -55°C
A
0
1
2
3
4
5
0 0.1 0.2 0.3 0.4 0.5 0.6
Fig. 11 Gate-Charge Characteristics
Q , TOTAL GATE CHARGE (nC)
g
V , GATE-SOURCE VOLTAGE (V)
GS
V = 10V
I = 250mA
DS
D
3 E El: E E Q E. F! fimli— m —' T i Tjfi—' 7— F——>| <+——>| Iol DMN2400UV sols Document number DSCNESZ Rev 7 , 2 WWW.diOdeS.COm
DMN2400UV
Document number: DS31852 Rev. 7 - 2
5 of 6
www.diodes.com January 2011
© Diodes Incorporated
DMN2400UV
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
Fig. 12 Transient Thermal Response
t , PULSE DURATION TIME (s)
1
0.001
0.01
0.1
1
r(t),
T
R
ANSIEN
T
T
H
E
R
MAL
R
ESIS
T
AN
C
E
T - T = P * R (t)
Duty Cycle, D = t /t
JA JA
12
θ
R (t) = r(t) *
θ
JA
R
R = 221°C/W
θ
θ
JA
JA
P(pk) t
1
t
2
D = 0.7
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
D = 0.9
D = 0.5
Package Outline Dimensions
Suggested Pad Layout
SOT-563
Dim Min Max Typ
A 0.15 0.30 0.20
B 1.10 1.25 1.20
C 1.55 1.70 1.60
D - - 0.50
G 0.90 1.10 1.00
H 1.50 1.70 1.60
K 0.55 0.60 0.60
L 0.10 0.30 0.20
M 0.10 0.18 0.11
All Dimensions in mm
Dimensions Value (in mm)
Z 2.2
G 1.2
X 0.375
Y 0.5
C1 1.7
C2 0.5
A
M
L
BC
H
K
G
D
X
Z
Y
C1
C2
C2
G
m5” DMN2400UV sols Document number DSCNESZ Rev 7 , 2 WWW.diOdeS.COm
DMN2400UV
Document number: DS31852 Rev. 7 - 2
6 of 6
www.diodes.com January 2011
© Diodes Incorporated
DMN2400UV
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2011, Diodes Incorporated
www.diodes.com

Products related to this Datasheet

MOSFET 2N-CH 20V 1.33A SOT563
MOSFET 2N-CH 20V 1.33A SOT563
MOSFET 2N-CH 20V 1.33A SOT563