IRLML0060TRPBF Datasheet by Infineon Technologies

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IRLML0060TRPbF
1 2016-12-20
Absolute Maximum Ratings
Symbol Parameter Max. Units
VDS Drain-to-Source Voltage 60 V
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 2.7
A
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 2.1
IDM Pulsed Drain Current 11
PD @TA= 25°C Maximum Power Dissipation 1.25
W
PD @TA= 70°C Maximum Power Dissipation 0.80
Linear Derating Factor 0.01 mW/°C
VGS Gate-to-Source Voltage ± 16
TJ Operating Junction and °C
TSTG Storage Temperature Range -55 to + 150
Micro 3™ (SOT-23)
IRLML0060TRPbF
G D S
Gate Drain Source
Base part number Package Type Standard Pack Orderable Part Number
Form Quantity
IRLML0060TRPbF Micro 3™ (SOT-23) Tape and Reel 3000 IRLML0060TRPbF
HEXFET® Power MOSFET
Thermal Resistance
Symbol Parameter Typ. Max. Units
RJA Junction-to-Ambient ––– 100
RJA Junction-to-Ambient (t < 10s) ––– 99
°C/W
VDSS 60 V
VGS ±16 V
RDS(on) max
(@ VGS = 10V) 92 m
RDS(on) max
(@ VGS = 4.5V) 116 m
Applications
 Load/System Switch
Features Benefits
Industry-Standard Pinout Multi-Vendor Compatibility
Compatible with Existing Surface Mount Techniques
results in Easier Manufacturing
RoHS Compliant Containing no Lead, no Bromide and no Halogen  Environmentally Friendlier
MSL1 Increased Reliability
(Imneon, Units
IRLML0060TRPbF
2 2016-12-20
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width 400µs; duty cycle 2%.
Surface mounted on 1 in square Cu board
Refer to application note #AN-994.
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 60 ––– ––– V VGS = 0V, ID = 250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.06 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– 98 116
m
VGS = 4.5V, ID = 2.2A
––– 78 92 VGS = 10V, ID = 2.7A
VGS(th) Gate Threshold Voltage 1.0 ––– 2.5 V VDS = VGS, ID = 25µA
IDSS Drain-to-Source Leakage Current ––– ––– 20 µA VDS = 60V, VGS = 0V
––– ––– 250 VDS = 60V,VGS = 0V,TJ = 125°C
IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 16V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -16V
RG Internal Gate Resistance ––– 1.6 –––
gfs Forward Trans conductance 7.6 ––– ––– S VDS = 25V, ID = 2.7A
Qg Total Gate Charge ––– 2.5 ––– ID = 2.7A
Qgs Gate-to-Source Charge ––– 0.7 ––– VDS = 30V
Qgd Gate-to-Drain (‘Miller’) Charge ––– 1.3 ––– VGS = 4.5V
td(on) Turn-On Delay Time ––– 5.4 –––
ns
VDD = 30V
tr Rise Time ––– 6.3 ––– ID = 1.0A
td(off) Turn-Off Delay Time ––– 6.8 ––– RG = 6.8
tf Fall Time ––– 4.2 ––– VGS = 4.5V
Ciss Input Capacitance ––– 290 –––
pF
VGS = 0V
Coss Output Capacitance ––– 37 ––– VDS = 25V
Crss Reverse Transfer Capacitance ––– 21 ––– ƒ = 1.0MHz
nC
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current ––– ––– 1.6
A
MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current ––– ––– 11 integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C,IS = 2.7A,VGS = 0V 
trr Reverse Recovery Time ––– 14 21 ns TJ = 25°C ,VR = 30V, IF = 1.6A
Qrr Reverse Recovery Charge ––– 13 20 nC di/dt = 100A/µs 
(Ifineon, VGs
IRLML0060TRPbF
3 2016-12-20
Fig. 2 Typical Output Characteristics
Fig. 3 Typical Transfer Characteristics Fig. 4 Normalized On-Resistance
vs. Temperature
Fig. 1 Typical Output Characteristics
0.1 110 100
VDS, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
ID, Drain-to-Source Current (A)
VGS
TOP 10V
6.0V
4.5V
4.0V
3.5V
3.3V
3.0V
BOTTOM 2.8V
60µs PULSE WIDTH
Tj = 25°C
2.8V
0.1 110 100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
ID, Drain-to-Source Current (A)
2.8V
60µs PULSE WIDTH
Tj = 150°C
VGS
TOP 10V
6.0V
4.5V
4.0V
3.5V
3.3V
3.0V
BOTTOM 2.8V
2 3 4 5
VGS, Gate-to-Source Voltage (V)
0.1
1
10
100
ID, Drain-to-Source Current (A)
TJ = 25°C
TJ = 150°C
VDS = 25V
60µs PULSE WIDTH
-60 -40 -20 020 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 2.7A
VGS = 10V
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IRLML0060TRPbF
4 2016-12-20
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 8. Maximum Safe Operating Area
Fig. 7 Typical Source-to-Drain Diode
Forward Voltage
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
0.1 110 100
VDS, Drain-to-Source Voltage (V)
10
100
1000
10000
C, Capacitance (pF)
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
01234567
QG, Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
VGS, Gate-to-Source Voltage (V)
VDS= 48V
VDS= 30V
VDS= 12V
ID= 2.7A
0.20.40.60.81.01.2
VSD, Source-to-Drain Voltage (V)
0.1
1
10
100
ISD, Reverse Drain Current (A)
TJ = 25°C
TJ = 150°C
VGS = 0V
0 1 10 100
VDS, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS(on)
TA = 25°C
Tj = 150°C
Single Pulse
100µsec
1msec
10msec
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IRLML0060TRPbF
5 2016-12-20
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current vs. Case Temperature
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
25 50 75 100 125 150
TA , Ambient Temperature (°C)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
ID, Drain Current (A)
1E-006 1E-005 0.0001 0.001 0.01 0.1 110 100
t1 , Rectangular Pulse Duration (sec)
0.01
0.1
1
10
100
1000
Thermal Response ( Z thJA ) °C/W
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + TA
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IRLML0060TRPbF
6 2016-12-20
Fig 13. Typical On-Resistance Vs.
Drain Current
Fig 14a. Basic Gate Charge Waveform
Fig 12. Typical On-Resistance Vs.
Gate Voltage
Fig 14b. Gate Charge Test Circuit
3 4 5 6 7 8 9 10
VGS, Gate -to -Source Voltage (V)
0
100
200
300
400
RDS(on), Drain-to -Source On Resistance (m)
ID = 2.7A
TJ = 25°C
TJ = 125°C
0246810 12
ID, Drain Current (A)
50
75
100
125
150
RDS(on), Drain-to -Source On Resistance (m)
Vgs = 10V
Vgs = 4.5V
(Imneon, //
IRLML0060TRPbF
7 2016-12-20
Fig 15. Typical Threshold Voltage Vs.
Junction Temperature Fig 16. Typical Power Vs. Time
-75 -50 -25 025 50 75 100 125 150
TJ , Temperature ( °C )
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
VGS(th), Gate threshold Voltage (V)
ID = 25µA
ID = 250µA
110 100 1000 10000 100000
Time (sec)
0
20
40
60
80
100
Power (W)
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IRLML0060TRPbF
8 2016-12-20
Note: For the most current drawing please refer to Infineon’s web site www.infineon.com
Micro3™ (SOT-23/TO-236AB) Part Marking Information
Micro3™ (SOT-23) Package Outline (Dimensions are shown in millimeters (inches))
e
E1
E
D
A
B
0.15 [0.006]
e1
12
3
MCBA
5
6
6
5
NOTES:
1. DIMENSIONING & TOLERANCING PER ANSI Y14. 5M-1994
2. DIMENSIONS ARE SHOWN IN MILLIMETERS [I NCHES].
3. CONTROLLI NG DIMENSION: MILLIMETER.
4. DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE.
5. DATUM A AND B TO BE DETERMINED AT DATUM PLANE H.
6. DIMENSIONS D AND E1 ARE MEASURED AT DATUM PLANE H. DI MENSIONS DOES
NOT INCLUDE MOLD PROTRUSI ONS OR INTERLEAD FLASH. MOLD PROTRUSIONS
OR INTERLEAD FLASH SHALL NOT EXCEED 0.25 MM [0. 010 INCH] PER SIDE.
7. DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE.
8. OUTLINE CONFORMS TO JEDEC OUTLI NE TO-236 AB.
NOTES:
b
A1 3X
A
A2
ABC
M
0.20 [0.008]
0.10 [0.004] C
C
3X L
c
L2
H4
L1
7
0.972
1.900
Recommended Footprint
0.802
0.950
2.742
0.89 1.12
SYMBOL MAXMIN
A1
b
0.01 0.10
c
0.30 0.50
D
0.08 0.20
E
2.80 3.04
E1
2.10 2.64
e
1.20 1.40
A
0.95 BSC
L0.40 0.60
08
MILLIMETERS
A2 0.88 1.02
e1 1.90 BSC
REF0.54L1
BSC
0.25
L2
0.010
BSC
0.021
REF
BSC 0.075
0.0400.035
INCHES
80
0.0240.016
BSC0.037
0.0550.047
0.1040.083
0.1200.110
0.0080.003
0.0200.012
0.004
0.0004
MIN MAX
0.0440.035
DIMENSIONS
(Imneon, www.infineon.co
IRLML0060TRPbF
9 2016-12-20
Micro3™Tape & Reel Information (Dimensions are shown in millimeters (inches))
Note: For the most current drawing please refer to Infineon’s web site www.infineon.com
2.05 ( .080 )
1.95 ( .077 )
TR
FEED DIRECTION
4.1 ( .161 )
3.9 ( .154 )
1.6 ( .062 )
1.5 ( .060 ) 1.85 ( .072 )
1.65 ( .065 )
3.55 ( .139 )
3.45 ( .136 )
1.1 ( .043 )
0.9 ( .036 )
4.1 ( .161 )
3.9 ( .154 ) 0.35 ( .013 )
0.25 ( .010 )
8.3 ( .326 )
7.9 ( .312 )
1.32 ( .051 )
1.12 ( .045 )
9.90 ( .390 )
8.40 ( .331 )
178.00
( 7.008 )
MAX.
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
(ifineon, Qualification Information V55 V55
IRLML0060TRPbF
10 2016-12-20
Revision History
Date Comments
12/20/16
 Changed datasheet with Infineon logo - all pages.
 Removed typo “Industrial” on Feature and Benefits Table on page1.
 Corrected typo for Igss test condition from “VGS = 20V” to “VGS = 16V” on page 2.
Qualification Information
Qualification Level Consumer
(per JEDEC JESD47F)
Moisture Sensitivity Level Micro3™ (SOT-23) MSL1
(per JEDEC J-STD-020D)
RoHS Compliant Yes
Applicable version of JEDEC standard at the time of product release.
Trademarks of Infineon Technologies AG
µHVIC™, µIPM™, µPFC™, AU-ConvertIR™, AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, CoolDP™, CoolGaN™, COOLiR™, CoolMOS™, CoolSET™,
CoolSiC™, DAVE™, DI-POL™, DirectFET™, DrBlade™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™,
GaNpowIR™, HEXFET™, HITFET™, HybridPACK™, iMOTION™, IRAM™, ISOFACE™, IsoPACK™, LEDrivIR™, LITIX™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™,
OPTIGA™, OptiMOS™, ORIGA™, PowIRaudio™, PowIRStage™, PrimePACK™, PrimeSTACK™, PROFET™, PRO-SIL™, RASIC™, REAL3™, SmartLEWIS™, SOLID
FLASH™, SPOC™, StrongIRFET™, SupIRBuck™, TEMPFET™, TRENCHSTOP™, TriCore™, UHVIC™, XHP™, XMC™
Trademarks updated November 2015
Other Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
Edition 2016-04-19
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2016 Infineon Technologies AG.
All Rights Reserved.
Do you have a question about this
document?
Email: erratum@infineon.com
Document reference
ifx1
IMPORTANT NOTICE
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”) .
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement
of intellectual property rights of any third party.
In addition, any information given in this
document is subject to customer’s compliance
with its obligations stated in this document and
any applicable legal requirements, norms and
standards concerning customer’s products and
any use of the product of Infineon Technologies in
customer’s applications.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical
departments to evaluate the suitability of the
product for the intended application and the
completeness of the product information given in
this document with respect to such application.
For further information on the product, technology,
delivery terms and conditions and prices please
contact your nearest Infineon Technologies office
(www.infineon.com).
Please note that this product is not qualified
according to the AEC Q100 or AEC Q101 documents
of the Automotive Electronics Council.
WARNINGS
Due to technical requirements products may
contain dangerous substances. For information on
the types in question please contact your nearest
Infineon Technologies office.
Except as otherwise explicitly approved by Infineon
Technologies in a written document signed by
authorized representatives of Infineon
Technologies, Infineon Technologies’ products
may not be used in any applications where a
failure of the product or any consequences of the
use thereof can reasonably be expected to result in
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