NYC0102BLT1G Datasheet by Littelfuse Inc.

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NYCO1OZBLT1 G ‘ 1 ON Semiconductor® 3
© Semiconductor Components Industries, LLC, 2014
July, 2014 − Rev. 2 1Publication Order Number:
NYC0102BL/D
NYC0102BLT1G
Sensitive Gate
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed and tested for highly−sensitive triggering in low-power
switching applications.
Features
High dv/dt
Gating Current < 200 mA
Miniature SOT−23 Package for High Density PCB
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
Peak Repetitive Off−State Voltage (Note 1)
(RGK = IK, TJ = *40 to +110°C, Sine
Wave, 50 to 60 Hz
VDRM,
VRRM 200
V
On-State Current RMS
(180° Conduction Angle, TC = 80°C) IT(RMS) 0.25 A
Peak Non-repetitive Surge Current,
TA = 25°C, (1/2 Cycle, Sine Wave, 60 Hz) ITSM 7.0 A
Circuit Fusing Considerations (t = 8.3 ms) I2t 0.2 A2s
Forward Peak Gate Power
(Pulse Width 1.0 msec, TA = 25°C) PGM 0.1 W
Forward Average Gate Power
(t = 8.3 msec, TA = 25°C) PG(AV) 0.02 W
Forward Peak Gate Current
(Pulse Width 20 ms, TA = 25°C) IFGM 0.5 A
Reverse Peak Gate Voltage
(Pulse Width 1.0 ms, TA = 25°C) VRGM 8.0 V
Operating Junction Temperature Range
@ Rated VRRM and VDRM
TJ−40 to
+125
°C
Storage Temperature Range Tstg −40 to
+150
°C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board
TA = 25°C
PD225 mW
Thermal Resistance, Junction−to−Ambient RqJA 380 °C/W
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
0.25 AMP, 200 VOLT SCRs
PIN ASSIGNMENT
1
2
3
Gate
Anode
Cathode
K
G
A
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SOT−23
CASE 318
STYLE 8
MARKING
DIAGRAM
1
2
3
1
C2B MG
G
C2B = Specific Device Code
M = Date Code*
G= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may vary de-
pending upon manufacturing location.
Device Package Shipping
ORDERING INFORMATION
NYC0102BLT1G SOT−23
(Pb−Free)
3000 / Tape &
Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
SZNYC0102BLT1G SOT−23
(Pb−Free)
3000 / Tape &
Reel
NYC0102BLT1G
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2
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Forward Blocking Current
(VDRM = 200 V, RGK = 1 kW)T
C = 25°C
TC = 125°C
IDRM
1.0
100 mA
mA
Peak Repetitive Reverse Blocking Current
(VDRM = 200 V, RGK = 1 kW)T
C = 25°C
TC = 125°C
IRRM
1.0
100 mA
mA
ON CHARACTERISTICS
Peak Forward On−State Voltage
(ITM = 0.4 A, tp < 1 ms, TC = 25°C) VTM − 1.7 V
Gate Trigger Current
(VD = 12 V, RL = 100 W, TC = 25°C) IGT 200 mA
Gate Trigger Voltage
(VD = 12 V, RL = 100 W, TC = 25°C) VGT 0.8 V
Holding Current
(IT = 50 mA, RGK = 1 kW, TC = 25°C) IH 6.0 mA
Gate Non−Trigger Voltage
(VD = VDRM, RL = 3.3 kW, TC = 125°C) VGD 0.1 − V
Latching Current
(IG = 1.0 mA, RGK = 1 kW, TC = 25°C) IL 7.0 mA
Gate Reverse Voltage
(IRG = 10 mA) VRG 8.0 − V
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off−State Voltage
(RGK = 1 kW, TC = 125°C) dv/dt 200 V/ms
Critical Rate of Rise of On−State Current
(IG = 2xIGT 60 Hz, tr < 100 ns, TJ = 125°C) di/dt 50 A/ms
+ Current
+ Voltage
VTM
IDRM at VDRM
IH
Symbol Parameter
VDRM Peak Repetitive Off State Forward Voltage
IDRM Peak Forward Blocking Current
VRRM Peak Repetitive Off State Reverse Voltage
IRRM Peak Reverse Blocking Current
VTM Peak on State Voltage
IHHolding Current
Voltage Current Characteristic of SCR
Anode +
on state
Reverse Blocking Region
(off state)
Reverse Avalanche Region
Anode −
Forward Blocking Region
IRRM at VRRM
(off state)
Gate Open , ‘k\ RGK ,
NYC0102BLT1G
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3
IT, AVERAGE CURRENT (A)
Figure 1. Maximum Average Power vs.
Average Current
Figure 2. Current Derating
0
0.05
0.1
0.15
0.2
0.25
0.3
0 50 100 150
T, TEMPERATURE (°C)
IT, AVERAGE CURRENT (A)
DC
180°
Figure 3. Surge Current ITSM vs. Number of
Cycles
0
3
7
1 10 100 1000
NUMBER OF CYCLES
ITSM (A)
Figure 4. Thermal Response
PULSE DURATION (s)
TRANSIENT RESISTANCE
(NORMALIZED)
Figure 5. ON−State Characteristics
VTM, (V)
I
TM
, (A)
Figure 6. Gate Trigger Current vs. TJ
(Normalized to 255C)
TJ, (K)
P, AVERAGE POWER (W)
0
0.05
0.1
0.15
0.2
0.25
0 0.05 0.1 0.15 0.2
4
5
6
2
1
0
0.2
0.4
0.6
0.8
1
1.E−04 1.E−03 1.E−02 1.E−01 1.E+00 1.E+01 1.E+02 1.E+03
0.1
1
10
0 0.5 1 1.5 2 2.5
25°C
125°C
0
0.5
1
1.5
2
200 250 300 350 40
0
Gate
Open
RGK = 1k
/ Gate RGK:1k
NYC0102BLT1G
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4
0
0.5
1
1.5
2
200 250 300 350 400
Figure 7. Gate Trigger Current vs. TJ
(Normalized to 255C)
TJ, (K)
Gate
Open
RGK = 1k
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
024681012
Figure 8. Gate Trigger Current vs. RGK
IGT (mA)
RGK, (kW)
0
5.0
10
15
25
02468101
IH,IL (mA)
Figure 9. Holding and Latching Current vs.
RGK
RGK, (kW)
0
500
1000
1500
2000
024681012
Figure 10. dV/dt vs. RGK
RGK, (kW)
dV/dt (V/ms)
20
3579
0
0.20
0.40
0.60
0.80
1.0
200 250 300 350 400
VGT (V)
Figure 11. Gate Triggering Voltage vs. TJ
TJ, (K)
III
NYC0102BLT1G
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5
PACKAGE DIMENSIONS
SOT−23 (TO−236)]
CASE 318−08
ISSUE AP
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
ǒmm
inchesǓ
SCALE 10:1
0.8
0.031
0.9
0.035
0.95
0.037
0.95
0.037
2.0
0.079
SOLDERING FOOTPRINT*
VIEW C
L
0.25
L1
q
e
EE
b
A
SEE VIEW C
DIM
AMIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.001
b0.37 0.44 0.50 0.015
c0.09 0.13 0.18 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.10 0.20 0.30 0.004
0.040 0.044
0.002 0.004
0.018 0.020
0.005 0.007
0.114 0.120
0.051 0.055
0.075 0.081
0.008 0.012
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
HE
0.35 0.54 0.69 0.014 0.021 0.029
c
0 −−− 10 0 −−− 10
q°°°°
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
P
UBLICATION ORDERING INFORMATION
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
NYC0102BL/D
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your loc
al
Sales Representative
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SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended,
or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which
the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or
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expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
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