VSMY2853RGX01, VSMY2853GX01 Datasheet by Vishay Semiconductor Opto Division

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VISHAY. SurfLighlm www.vishay.com/doc?99912 “mam; ® m... RoHS cowmm moss" FREE QREEN 5.1m emwttertechsupgorl@wshay.com www.v\shay.com/doc?91000
VSMY2853RGX01, VSMY2853GX01
www.vishay.com Vishay Semiconductors
Rev. 1.0, 31-Jul-2018 1Document Number: 84904
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Speed Infrared Emitting Diodes, 850 nm,
Surface Emitter Technology
DESCRIPTION
As part of the SurfLightTM portfolio, the VSMY2853 series
are infrared, 850 nm emitting diodes based on GaAlAs
surface emitter chip technology with extreme high radiant
intensities, high optical power and high speed, molded in
clear, untinted plastic packages (with lens) for surface
mounting (SMD).
APPLICATIONS
Automotive sensors
Miniature light barrier
• Photointerrupters
Optical switch
Emitter source for proximity sensors
IR illumination
FEATURES
Package type: surface-mount
Package form: GW, RGW
Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.55
AEC-Q101 qualified
Peak wavelength: λp = 850 nm
High reliability
High radiant power
Very high radiant intensity
Angle of half intensity: ϕ = ± 28°
Suitable for high pulse current operation
Terminal configurations: gullwing or reverse gullwing
Package matches with detector VEMD2503X01 series
Floor life: 4 weeks, MSL 2a, according to J-STD-020
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Note
Test conditions see table “Basic Characteristics“
Note
MOQ: minimum order quantity
VSMY2853RGX01 VSMY2853GX01
PRODUCT SUMMARY
COMPONENT Ie (mW/sr) ϕ (deg) λp (nm) tr (ns)
VSMY2853RGX01 50 ± 28 850 10
VSMY2853GX01 50 ± 28 850 10
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
VSMY2853RGX01 Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Reverse gullwing
VSMY2853GX01 Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Gullwing
VISHAY. em\ttertechsupgon@wshay,com www.v\shay,com/doc?91000
VSMY2853RGX01, VSMY2853GX01
www.vishay.com Vishay Semiconductors
Rev. 1.0, 31-Jul-2018 2Document Number: 84904
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage VR5V
Forward current IF100 mA
Peak forward current tp/T = 0.5, tp = 100 μs IFM 200 mA
Surge forward current tp = 100 μs IFSM 1A
Power dissipation PV190 mW
Junction temperature Tj100 °C
Operating temperature range Tamb -40 to +85 °C
Storage temperature range Tstg -40 to +100 °C
Soldering temperature According to Fig. 7, J-STD-020 Tsd 260 °C
Thermal resistance junction-to-ambient EIA / JESD51 RthJA 250 K/W
0
20
40
60
80
100
120
140
160
180
200
0 102030405060708090100
21890
T
amb
- Ambient Temperature (°C)
P
V
- Power Dissipation (mW)
RthJA = 250 K/W
0
20
40
60
80
100
120
0 102030405060708090100
21891
R
thJA
= 250 K/W
T
amb
- Ambient Temperature (°C)
I
F
- Forward Current (mA)
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage IF = 100 mA, tp = 20 ms VF-1.61.9V
IF = 1 A, tp = 100 μs VF-2.8-V
Temperature coefficient of VFIF = 100 mA TKVF --1.5-mV/K
Reverse current IRNot designed for reverse operation μA
Junction capacitance VR = 0 V, f = 1 MHz, E = 0 mW/cm2CJ-50-pF
Radiant intensity IF = 100 mA, tp = 20 ms Ie27 50 75 mW/sr
IF = 1 A, tp = 100 μs Ie-350-mW/sr
Radiant power IF = 100 mA, tp = 20 ms φe-55-mW
Temperature coefficient of radiant power IF = 100 mA TKφe- -0.12 - %/K
Angle of half intensity ϕ 28-deg
Peak wavelength IF = 100 mA λp840 850 870 nm
Spectral bandwidth IF = 100 mA Δλ -30-nm
Temperature coefficient of λpIF = 100 mA TKλp-0.25-nm/K
Rise time IF = 100 mA, 10 % to 90 % tr-10-ns
Fall time IF = 100 mA, 10 % to 90 % tf-10-ns
— VISHAY. V HM; \/1x :: ’Z / www.msha .com/doc791000
VSMY2853RGX01, VSMY2853GX01
www.vishay.com Vishay Semiconductors
Rev. 1.0, 31-Jul-2018 3Document Number: 84904
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 3 - Forward Current vs. Forward Voltage
Fig. 4 - Relative Radiant vs. Forward Current
Fig. 5 - Relative Radiant Power vs. Wavelength
Fig. 6 - Relative Radiant Intensity vs. Angular Displacement
SOLDER PROFILE
Fig. 7 - Lead (Pb)-free Reflow Solder Profile
According to J-STD-020
DRYPACK
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
FLOOR LIFE
Floor life (time between soldering and removing from MBB)
must not exceed the time indicated on MBB label:
Floor life: 4 weeks
Conditions: Tamb < 30 °C, RH < 60 %
Moisture sensitivity level 2a, according to J-STD-020.
DRYING
In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-020 or label.
Devices taped on reel dry using recommended conditions
192 h at 40 °C (+ 5 °C), RH < 5 %.
1
10
100
1000
1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6
IF- Forward Current (mA)
VF- Forward Voltage (V)
tp= 100 μs
0.1
1
10
10 100 1000
Ie,rel - Relative Radiant Intensity
(Ie/ Ie(100 mA))
IF- Forward Current (mA)
tp= 100 μs
0
20
40
60
80
100
750 800 850 900 950
Ie, rel - Relative Radiant Intensity (%)
λ- Wavelength (nm)
IF= 100 mA
22688
Ie rel - Relative Radiant Intensity
ϕ - Angular Displacement
0.4 0.2 00.6
10° 20°
0.9
0.8
30°
40°
50°
60°
70°
80°
0.7
1.0
240 °C
Max. 260 °C
217 °C
255 °C
19841-1
10
100
1000
10000
0
100
200
300
0 50 100 150 200 300
Axis Title
1st line
2nd line
2nd line
Temperature (°C)
Time (s)
50
150
250
250
245 °C
Max. 100 s
Max. 30 s
Max. 120 s
Max. ramp down 6 °C/s
Max. ramp up 3 °C/s
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VSMY2853RGX01, VSMY2853GX01
www.vishay.com Vishay Semiconductors
Rev. 1.0, 31-Jul-2018 4Document Number: 84904
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE DIMENSIONS in millimeters: VSMY2853RGX01
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VSMY2853RGX01, VSMY2853GX01
www.vishay.com Vishay Semiconductors
Rev. 1.0, 31-Jul-2018 5Document Number: 84904
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE DIMENSIONS in millimeters: VSMY2853GX01
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VSMY2853RGX01, VSMY2853GX01
www.vishay.com Vishay Semiconductors
Rev. 1.0, 31-Jul-2018 6Document Number: 84904
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TAPING AND REEL DIMENSIONS in millimeters: VSMY2853RGX01
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VSMY2853RGX01, VSMY2853GX01
www.vishay.com Vishay Semiconductors
Rev. 1.0, 31-Jul-2018 7Document Number: 84904
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TAPING AND REEL DIMENSIONS in millimeters: VSMY2853GX01
— VISHAY. V
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Revision: 01-Jan-2021 1Document Number: 91000
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