BUK7Y3R0-40H Datasheet by Nexperia USA Inc.

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BUK7Y3R0-40H
N-channel 40 V, 3.0 mΩ standard level MOSFET in LFPAK56
10 May 2018 Product data sheet
1. General description
Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction
technology, housed in a robust LFPAK56 package. This product has been fully designed and
qualified to meet AEC-Q101 requirements delivering high performance and endurance.
2. Features and benefits
Fully automotive qualified to AEC-Q101:
175 °C rating suitable for thermally demanding environments
Trench 9 Superjunction technology:
Reduced cell pitch enables enhanced power density and efficiency with lower RDSon in
same footprint
Improved SOA and avalanche capability compared to standard TrenchMOS
Tight VGS(th) limits enable easy paralleling of MOSFETs
LFPAK Gull Wing leads:
High Board Level Reliability absorbing mechanical stress during thermal cycling, unlike
traditional QFN packages
Visual (AOI) soldering inspection, no need for expensive x-ray equipment
Easy solder wetting for good mechanical solder joint
LFPAK copper clip technology:
Improved reliability, with reduced Rth and RDSon
Increases maximum current capability and improved current spreading
3. Applications
12 V automotive systems
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power switching
BUK7Y3R0-40H Table 1‘ Quick reference data ID = 25 A: v05 = Fig. 12 Fig.13
Nexperia BUK7Y3R0-40H
N-channel 40 V, 3.0 mΩ standard level MOSFET in LFPAK56
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C - - 40 V
IDdrain current VGS = 10 V; Tmb = 25 °C - - 120 A
Ptot total power dissipation Tmb = 25 °C; Fig. 1 - - 172 W
Static characteristics
RDSon drain-source on-state
resistance
VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 10
1.8 2.55 3
Dynamic characteristics
QGD gate-drain charge ID = 25 A; VDS = 32 V; VGS = 10 V;
Fig. 12; Fig. 13
- 6.3 15.8 nC
Source-drain diode
Qrrecovered charge IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 20 V
- 19.5 - nC
S softness factor IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 20 V; Tj = 25 °C; Fig. 16
- 0.8 -
BUK7Y3R0-40H All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved
Product data sheet 10 May 2018 2 / 13
BUK7Y3R0-40H Table 2‘ Pinning information Table 3‘ Ordering information Table 4‘ Marking codes
Nexperia BUK7Y3R0-40H
N-channel 40 V, 3.0 mΩ standard level MOSFET in LFPAK56
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 S source
2 S source
3 S source
4 G gate
mb D mounting base; connected to
drain
mb
1 2 3 4
LFPAK56; Power-
SO8 (SOT669)
S
D
G
mbb076
6. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
BUK7Y3R0-40H LFPAK56;
Power-SO8
plastic, single-ended surface-mounted package; 4 terminals SOT669
7. Marking
Table 4. Marking codes
Type number Marking code
BUK7Y3R0-40H 73H040
BUK7Y3R0-40H All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved
Product data sheet 10 May 2018 3 / 13
BUK7Y3R0-40H Table 5 Li ng values In accendance with the Absuiute Maximum Rating System (IEC 60134). [21E] ”my
Nexperia BUK7Y3R0-40H
N-channel 40 V, 3.0 mΩ standard level MOSFET in LFPAK56
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C - 40 V
VGS gate-source voltage DC; Tj ≤ 175 °C -10 20 V
Ptot total power dissipation Tmb = 25 °C; Fig. 1 - 172 W
IDdrain current VGS = 10 V; Tmb = 25 °C - 120 A
IDM peak drain current pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 2 - 600 A
Tstg storage temperature -55 175 °C
Tjjunction temperature -55 175 °C
Source-drain diode
ISsource current Tmb = 25 °C [1] - 120 A
ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 600 A
Avalanche ruggedness
EDS(AL)S non-repetitive drain-
source avalanche
energy
ID = 120 A; Vsup ≤ 40 V; RGS = 50 Ω;
VGS = 10 V; Tj(init) = 25 °C; unclamped;
Fig. 3
[2] [3] - 50 mJ
[1] 120A continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB,
thermal design and operating temperature.
[2] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
[3] Refer to application note AN10273 for further information.
Tmb (°C)
0 20015050 100
03na19
40
80
120
Pder
(%)
0
Fig. 1. Normalized total power dissipation as a function of mounting base temperature
BUK7Y3R0-40H All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved
Product data sheet 10 May 2018 4 / 13
BUK7Y3R0-40H
Nexperia BUK7Y3R0-40H
N-channel 40 V, 3.0 mΩ standard level MOSFET in LFPAK56
aaa-027086
10-1 1 10 102
10-1
1
10
102
103
VDS (V)
ID
ID
(A)(A)
DCDC
100 ms100 ms
10 ms10 ms
1 ms1 ms
100 µs100 µs
tp = 10 µstp = 10 µs
Limit RDSon = VDS / ID
Limit RDSon = VDS / ID
Tmb = 25 °C; IDM is a single pulse
Fig. 2. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
aaa-027085
10-3 10-2 10-1 1 10
10-1
1
10
102
103
tAL (ms)
IAL
IAL
(A)(A)
(1)(1)
(2)(2)
(3)(3)
(1) Tj (init) = 25°C; (2) Tj (init) = 150°C; (3) Repetitive Avalanche
Fig. 3. Avalanche rating; avalanche current as a function of avalanche time
BUK7Y3R0-40H All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved
Product data sheet 10 May 2018 5 / 13
BUK7Y3R0-40H Table 6. Thermal characteristics
Nexperia BUK7Y3R0-40H
N-channel 40 V, 3.0 mΩ standard level MOSFET in LFPAK56
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-mb) thermal resistance
from junction to
mounting base
Fig. 4 - 0.77 0.87 K/W
aaa-027087
10-6 10-5 10-4 10-3 10-2 10-1 1
10-3
10-2
10-1
1
tp (s)
Zth(j-mb)
Zth(j-mb)
(K/W)(K/W)
single shotsingle shot
δ = 0.5δ = 0.5
0.20.2
0.10.1
0.050.05
0.020.02
P
t
tp
T
tp
δ = T
Fig. 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK7Y3R0-40H All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved
Product data sheet 10 May 2018 6 / 13
BUK7Y3R0-40H Table 7. Characteristics in = 1 Fig. 3 Fig. 9 Fig. 3 Fig. 3 vGS = 1 Fig. 10 vGS = 1 Fig. 11 vGS = 1 Fig. 11 vGS = 1 Fig. 11 Fig. 15 ‘
Nexperia BUK7Y3R0-40H
N-channel 40 V, 3.0 mΩ standard level MOSFET in LFPAK56
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
ID = 250 µA; VGS = 0 V; Tj = 25 °C 40 43 - V
ID = 250 µA; VGS = 0 V; Tj = -40 °C - 40.5 - V
V(BR)DSS drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = -55 °C 36 40 - V
ID = 1 mA; VDS=VGS; Tj = 25 °C; Fig. 8;
Fig. 9
2.4 3 3.6 V
ID = 1 mA; VDS=VGS; Tj = -55 °C; Fig. 8 - - 4.3 V
VGS(th) gate-source threshold
voltage
ID = 1 mA; VDS=VGS; Tj = 175 °C; Fig. 8 1 - - V
VDS = 40 V; VGS = 0 V; Tj = 25 °C - 0.06 1 µA
VDS = 16 V; VGS = 0 V; Tj = 125 °C - 0.8 10 µA
IDSS drain leakage current
VDS = 40 V; VGS = 0 V; Tj = 175 °C - 80 500 µA
VGS = 20 V; VDS = 0 V; Tj = 25 °C - 2 100 nAIGSS gate leakage current
VGS = -10 V; VDS = 0 V; Tj = 25 °C - 2 100 nA
VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 10
1.8 2.55 3
VGS = 10 V; ID = 25 A; Tj = 105 °C;
Fig. 11
2.5 3.6 4.8 mΩ
VGS = 10 V; ID = 25 A; Tj = 125 °C;
Fig. 11
2.8 4 5.3 mΩ
RDSon drain-source on-state
resistance
VGS = 10 V; ID = 25 A; Tj = 175 °C;
Fig. 11
3.5 5 6.5 mΩ
RGgate resistance f = 1 MHz; Tj = 25 °C 0.34 0.85 2.12 Ω
Dynamic characteristics
QG(tot) total gate charge - 34 59 nC
QGS gate-source charge - 9.8 15 nC
QGD gate-drain charge
ID = 25 A; VDS = 32 V; VGS = 10 V;
Fig. 12; Fig. 13
- 6.3 15.8 nC
Ciss input capacitance - 2417 5449 pF
Coss output capacitance - 688 1377 pF
Crss reverse transfer
capacitance
VDS = 25 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; Fig. 14
- 108 415 pF
td(on) turn-on delay time - 10 - ns
trrise time - 8.1 - ns
td(off) turn-off delay time - 21.4 - ns
tffall time
VDS = 30 V; RL = 1.2 Ω; VGS = 10 V;
RG(ext) = 5 Ω
- 10 - ns
Source-drain diode
VSD source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 15 - 0.8 1.2 V
BUK7Y3R0-40H All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved
Product data sheet 10 May 2018 7 / 13
BUK7Y3R0-40H /// /A
Nexperia BUK7Y3R0-40H
N-channel 40 V, 3.0 mΩ standard level MOSFET in LFPAK56
Symbol Parameter Conditions Min Typ Max Unit
trr reverse recovery time - 27 - ns
Qrrecovered charge
IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 20 V - 19.5 - nC
IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 20 V; Tj = 25 °C; Fig. 16
- 0.8 - S softness factor
IS = 25 A; dIS/dt = -500 A/µs; VGS = 0 V;
VDS = 20 V; Tj = 25 °C; Fig. 16
- 0.7 -
aaa-027088
01234
0
40
80
120
160
VDS (V)
ID
ID
(A)(A)
VGS = 4 VVGS = 4 V
4.5 V4.5 V
5 V5 V
5.5 V5.5 V6 V6 V10 V10 V
Tj = 25 °C
Fig. 5. Output characteristics; drain current as a
function of drain-source voltage; typical values
aaa-027095
0 5 10 15 20
0
5
10
15
20
VGS (V)
RDSon
RDSon
(mΩ)(mΩ)
Tj = 25 °C; ID = 25 A
Fig. 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values
aaa-027089
0 1 2 3 4 5 6 7
0
50
100
150
200
VGS (V)
ID
ID
(A)(A)
-55°C-55°C
Tj= 25°CTj= 25°C
175°C175°C
VDS = 8 V
Fig. 7. Transfer characteristics; drain current as a
function of gate-source voltage; typical values
aaa-018139
-60 -30 0 30 60 90 120 150 180
0
1
2
3
4
5
Tj (°C)
VGS(th)
VGS(th)
(V)(V)
TypTyp
MinMin
MaxMax
ID = 1 mA ; VDS = VGS
Fig. 8. Gate-source threshold voltage as a function of
junction temperature
BUK7Y3R0-40H All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved
Product data sheet 10 May 2018 8 / 13
BUK7Y3R0-40H 7 RDSo/v RDSon (25°C)
Nexperia BUK7Y3R0-40H
N-channel 40 V, 3.0 mΩ standard level MOSFET in LFPAK56
aaa-018138
012345
10-6
10-5
10-4
10-3
10-2
10-1
VGS (V)
ID
ID
(A)(A)
TypTypMinMin MaxMax
Tj = 25 °C; VDS = 5V
Fig. 9. Sub-threshold drain current as a function of
gate-source voltage
aaa-027090
0 20 40 60 80 100 120 140 160
0
4
8
12
16
20
ID (A)
RDSon
RDSon
(mΩ)(mΩ) 4.5 V4.5 V 5 V5 V
5.5 V5.5 V
6 V6 V
10 V10 V
VGS = 20 VVGS = 20 V
Tj = 25 °C
Fig. 10. Drain-source on-state resistance as a function
of drain current; typical values
aaa-026897
-60 -30 0 30 60 90 120 150 180
0
0.4
0.8
1.2
1.6
2
2.4
Tj (°C)
aa
Fig. 11. Normalized drain-source on-state resistance
factor as a function of junction temperature
aaa-027092
0 10 20 30 40
0
2
4
6
8
10
QG (nC)
VGS
VGS
(V)(V)
32 V32 VVDS = 14 VVDS = 14 V
Tj = 25 °C; ID = 25 A
Fig. 12. Gate-source voltage as a function of gate
charge; typical values
BUK7Y3R0-40H All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved
Product data sheet 10 May 2018 9 / 13
BUK7Y3R0-40H
Nexperia BUK7Y3R0-40H
N-channel 40 V, 3.0 mΩ standard level MOSFET in LFPAK56
003aaa508
VGS
VGS(th)
QGS1
QGS2
QGD
VDS
QG(tot)
ID
QGS
VGS(pl)
Fig. 13. Gate charge waveform definitions
aaa-027093
10-1 1 10 102
10
102
103
104
VDS (V)
CC
(pF)(pF)
Ciss
Ciss
Coss
Coss
Crss
Crss
VGS = 0 V; f = 1 MHz
Fig. 14. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
aaa-027094
0 0.2 0.4 0.6 0.8 1 1.2
0
40
80
120
160
VSD (V)
IS
IS
(A)(A)
Tj = 25°CTj = 25°C175°C175°C
VGS = 0 V
Fig. 15. Source-drain (diode forward) current as a
function of source-drain (diode forward)
voltage; typical values
003aaf444
0
S =
0.25 IRM
t (s)
trr
ta
tb
ta
tb
IRM
ID
(A)
Fig. 16. Reverse recovery waveform definitions
BUK7Y3R0-40H All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved
Product data sheet 10 May 2018 10 / 13
BUK7Y3R0-40H Plastic single-ended surlace-mounted package (LFPAKSG; Power—sea); ¢ leads sorsss E© 44493—2;
Nexperia BUK7Y3R0-40H
N-channel 40 V, 3.0 mΩ standard level MOSFET in LFPAK56
11. Package outline
References
Outline
version
European
projection Issue date
IEC JEDEC JEITA
SOT669 MO-235
sot669_po
11-03-25
13-02-27
Unit(1)
mm
max
nom
min
1.20
1.01
0.15
0.00
0.25
0.50
0.35
4.41
3.62
2.2
2.0
6.2
5.8
0.85
0.40
A
Dimensions (mm are the original dimensions)
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
Plastic single-ended surface-mounted package (LFPAK56; Power-SO8); 4 leads SOT669
A1A2
1.10
0.95
A3b b2b3
0.1
L2w y
8°
0°
θ
b4c c2D(1) D1(1) E(1) E1(1)
3.3
3.1
e
1.27
H L
0.25
0.19
0.30
0.24
4.20 1.3
0.8
0.25
0.9
0.7
4.10
3.80
5.0
4.8
1.3
0.8
L1
A C
1/2 e
w A
0 5 mm
scale
e
E1
b
c2
A2
12 3 4
mounting
base
D1
c
E
b2
b3
b4
HD
L2
L1
C
X
y C
q
(A3)
L
A
A1
detail X
Fig. 17. Package outline LFPAK56; Power-SO8 (SOT669)
BUK7Y3R0-40H All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved
Product data sheet 10 May 2018 11 / 13
Docu :1 [1113 El suit me m a design on da|a sheer is explained status 0! devices) described e this aammem was publish as The latest product Siam rings www nexgeria com BUK7Y3R0-40H can I ions Mcommercia sale 7 Nex |o me generai Ierms and commons or m llwww nex er m/ m ellerms
Nexperia BUK7Y3R0-40H
N-channel 40 V, 3.0 mΩ standard level MOSFET in LFPAK56
12. Legal information
Data sheet status
Document status
[1][2]
Product
status [3]
Definition
Objective [short]
data sheet
Development This document contains data from
the objective specification for
product development.
Preliminary [short]
data sheet
Qualification This document contains data from
the preliminary specification.
Product [short]
data sheet
Production This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the internet at https://www.nexperia.com.
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the relevant
full data sheet, which is available on request via the local Nexperia sales
office. In case of any inconsistency or conflict with the short data sheet, the
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data sheet shall define the specification of the product as agreed between
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Suitability for use in automotive applications — This Nexperia product
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Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
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products are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
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Characteristics sections of this document is not warranted. Constant or
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trademarks are the property of their respective owners.
BUK7Y3R0-40H All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved
Product data sheet 10 May 2018 12 / 13
BUK7Y3R0-40H
Nexperia BUK7Y3R0-40H
N-channel 40 V, 3.0 mΩ standard level MOSFET in LFPAK56
Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................2
5. Pinning information......................................................3
6. Ordering information....................................................3
7. Marking.......................................................................... 3
8. Limiting values............................................................. 4
9. Thermal characteristics............................................... 6
10. Characteristics............................................................ 7
11. Package outline........................................................ 11
12. Legal information.......................................................12
© Nexperia B.V. 2018. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 10 May 2018
BUK7Y3R0-40H All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved
Product data sheet 10 May 2018 13 / 13

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