PESDzzzL5Ux Datasheet by Nexperia USA Inc.

View All Related Products | Download PDF Datasheet
nexpefla http://www.nxD.com http://www.DhiliDs.com/ httD://www.semiconductors.philips.com/ htt : www.nex eria.com salesaddressesQneer com
Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com (email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
- © Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
I . 'foundedbyPhIhps
1. Product profile
1.1 General description
Low capacitance unidirectional fivefold ElectroStatic Discharge (ESD) protection diode
arrays in small Surface-Mounted Device (SMD) plastic packages designed to protect up to
five unidirectional signal lines from the damage caused by ESD and other transients.
1.2 Features
1.3 Applications
PESDxL5UF; PESDxL5UV;
PESDxL5UY
Low capacitance unidirectional fivefold ESD protection diode
arrays
Rev. 02 — 8 January 2008 Product data sheet
Table 1. Product overview
Type number Package Package configuration
NXP JEITA JEDEC
PESD3V3L5UF SOT886 - MO-252 leadless ultra small
PESD5V0L5UF SOT886 - MO-252 leadless ultra small
PESD3V3L5UV SOT666 - - ultra small and flat lead
PESD5V0L5UV SOT666 - - ultra small and flat lead
PESD3V3L5UY SOT363 SC-88 - very small
PESD5V0L5UY SOT363 SC-88 - very small
nESD protection of up to five lines nUltra low leakage current: IRM =5nA
nLow diode capacitance nESD protection up to 20 kV
nMax. peak pulse power: PPP =25W nIEC 61000-4-2; level 4 (ESD)
nLow clamping voltage: VCL =12V nIEC 61000-4-5 (surge); IPP = 2.5 A
nComputers and peripherals nCommunication systems
nAudio and video equipment nPortable electronics
nCellular handsets and accessories nSubscriber Identity Module (SIM) card
protection
_H__H_ _H__H_ _U_H_ VII—I 0 LI LIL!
PESDXL5UF_V_Y_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 8 January 2008 2 of 17
NXP Semiconductors PESDxL5UF/V/Y
Low capacitance unidirectional fivefold ESD protection diode arrays
1.4 Quick reference data
2. Pinning information
Table 2. Quick reference data
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Per diode
VRWM reverse standoff voltage
PESD3V3L5UF
PESD3V3L5UV
PESD3V3L5UY
- - 3.3 V
PESD5V0L5UF
PESD5V0L5UV
PESD5V0L5UY
- - 5.0 V
Cddiode capacitance f = 1 MHz; VR=0V
PESD3V3L5UF
PESD3V3L5UV
PESD3V3L5UY
- 2228pF
PESD5V0L5UF
PESD5V0L5UV
PESD5V0L5UY
- 1619pF
Table 3. Pinning
Pin Description Simplified outline Symbol
PESD3V3L5UF; PESD5V0L5UF
1 cathode (diode 1)
2 common anode
3 cathode (diode 2)
4 cathode (diode 3)
5 cathode (diode 4)
6 cathode (diode 5)
PESD3V3L5UV; PESD5V0L5UV
1 cathode (diode 1)
2 common anode
3 cathode (diode 2)
4 cathode (diode 3)
5 cathode (diode 4)
6 cathode (diode 5)
bottom view
321
456
61
52
43
006aaa159
123
456 61
52
43
006aaa159
de,
PESDXL5UF_V_Y_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 8 January 2008 3 of 17
NXP Semiconductors PESDxL5UF/V/Y
Low capacitance unidirectional fivefold ESD protection diode arrays
3. Ordering information
4. Marking
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
PESD3V3L5UY; PESD5V0L5UY
1 cathode (diode 1)
2 common anode
3 cathode (diode 2)
4 cathode (diode 3)
5 cathode (diode 4)
6 cathode (diode 5)
Table 3. Pinning
…continued
Pin Description Simplified outline Symbol
132
4
56 61
52
43
006aaa159
Table 4. Ordering information
Type number Package
Name Description Version
PESD3V3L5UF XSON6 plastic extremely thin small outline package;
no leads; 6 terminals; body 1 ×1.45 ×0.5 mm SOT886
PESD5V0L5UF
PESD3V3L5UV - plastic surface-mounted package; 6 leads SOT666
PESD5V0L5UV
PESD3V3L5UY SC-88 plastic surface-mounted package; 6 leads SOT363
PESD5V0L5UY
Table 5. Marking codes
Type number Marking code[1]
PESD3V3L5UF A1
PESD5V0L5UF A2
PESD3V3L5UV E1
PESD5V0L5UV E2
PESD3V3L5UY K3*
PESD5V0L5UY K4*
PESDXL5UF_V_Y_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 8 January 2008 4 of 17
NXP Semiconductors PESDxL5UF/V/Y
Low capacitance unidirectional fivefold ESD protection diode arrays
5. Limiting values
[1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.
[2] Measured from pin 1, 3, 4, 5 or 6 to pin 2.
[1] Device stressed with ten non-repetitive ESD pulses.
[2] Measured from pin 1, 3, 4, 5 or 6 to pin 2.
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per diode
PPP peak pulse power tp= 8/20 µs[1][2] -25W
IPP peak pulse current tp= 8/20 µs[1][2] - 2.5 A
Per device
Tjjunction temperature - 150 °C
Tamb ambient temperature 65 +150 °C
Tstg storage temperature 65 +150 °C
Table 7. ESD maximum ratings
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Max Unit
Per diode
VESD electrostatic discharge voltage IEC 61000-4-2
(contact discharge)
[1][2] -20kV
MIL-STD-883 (human
body model) -10kV
Table 8. ESD standards compliance
Standard Conditions
Per diode
IEC 61000-4-2; level 4 (ESD) > 15 kV (air); > 8 kV (contact)
MIL-STD-883; class 3 (human body model) > 4 kV
PESDXL5UF_V_Y_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 8 January 2008 5 of 17
NXP Semiconductors PESDxL5UF/V/Y
Low capacitance unidirectional fivefold ESD protection diode arrays
6. Characteristics
Fig 1. 8/20 µs pulse waveform according to
IEC 61000-4-5 Fig 2. ESD pulse waveform according to
IEC 61000-4-2
t (µs)
0403010 20
001aaa630
40
80
120
IPP
(%)
0
et
100 % IPP; 8 µs
50 % IPP; 20 µs
001aaa631
IPP
100 %
90 %
t
30 ns
60 ns
10 %
tr = 0.7 ns to 1 ns
Table 9. Characteristics
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Per diode
VRWM reverse standoff voltage
PESD3V3L5UF
PESD3V3L5UV
PESD3V3L5UY
- - 3.3 V
PESD5V0L5UF
PESD5V0L5UV
PESD5V0L5UY
- - 5.0 V
IRM reverse leakage current
PESD3V3L5UF
PESD3V3L5UV
PESD3V3L5UY
VRWM = 3.3 V - 75 300 nA
PESD5V0L5UF
PESD5V0L5UV
PESD5V0L5UY
VRWM = 5.0 V - 5 25 nA
VBR breakdown voltage IR=1mA
PESD3V3L5UF
PESD3V3L5UV
PESD3V3L5UY
5.3 5.6 5.9 V
PESD5V0L5UF
PESD5V0L5UV
PESD5V0L5UY
6.4 6.8 7.2 V
PESDXL5UF_V_Y_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 8 January 2008 6 of 17
NXP Semiconductors PESDxL5UF/V/Y
Low capacitance unidirectional fivefold ESD protection diode arrays
[1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.
[2] Measured from pin 1, 3, 4, 5 or 6 to pin 2.
Cddiode capacitance f = 1 MHz;
VR=0V
PESD3V3L5UF
PESD3V3L5UV
PESD3V3L5UY
- 2228pF
PESD5V0L5UF
PESD5V0L5UV
PESD5V0L5UY
- 1619pF
VCL clamping voltage [1][2]
PESD3V3L5UF
PESD3V3L5UV
PESD3V3L5UY
IPP =1A --10V
PESD3V3L5UF
PESD3V3L5UV
PESD3V3L5UY
IPP = 2.5 A - - 12 V
PESD5V0L5UF
PESD5V0L5UV
PESD5V0L5UY
IPP =1A --10V
PESD5V0L5UF
PESD5V0L5UV
PESD5V0L5UY
IPP = 2.5 A - - 12 V
rdif differential resistance IR=1mA
PESD3V3L5UF
PESD3V3L5UV
PESD3V3L5UY
- - 200
PESD5V0L5UF
PESD5V0L5UV
PESD5V0L5UY
- - 100
Table 9. Characteristics
…continued
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
PESDXL5UF_V_Y_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 8 January 2008 7 of 17
NXP Semiconductors PESDxL5UF/V/Y
Low capacitance unidirectional fivefold ESD protection diode arrays
Tamb =25°C
Fig 3. Peak pulse power as a function of exponential
pulse duration; typical values Fig 4. Relative variation of peak pulse power as a
function of junction temperature; typical values
f = 1 MHz; Tamb =25°C
(1) PESD3V3L5UF; PESD3V3L5UV; PESD3V3L5UY
(2) PESD5V0L5UF; PESD5V0L5UV; PESD5V0L5UY
Fig 5. Diode capacitance as a function of reverse
voltage; typical values Fig 6. Relative variation of reverse current as a
function of junction temperature; typical values
006aab139
110
4
103
10 102
10
102
PPP
(W)
1
tp (µs)
006aab140
Tj (°C)
0 15010050
0.4
0.8
0.2
0.6
1.0
1.2
0
PPP
PPP(25°C)
006aab141
VR (V)
054231
(1)
(2)
10
5
15
25
20
Cd
(pF)
0
006aab142
Tj (°C)
75 25 17512525 75
1
10
101
IR
IR(25°C)
PESDXL5UF_V_Y_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 8 January 2008 8 of 17
NXP Semiconductors PESDxL5UF/V/Y
Low capacitance unidirectional fivefold ESD protection diode arrays
Fig 7. V-I characteristics for a unidirectional ESD protection diode
006aaa407
VCL VBR VRWM
IRM
IR
IPP
V
I
P-N
+
PESDXL5UF_V_Y_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 8 January 2008 9 of 17
NXP Semiconductors PESDxL5UF/V/Y
Low capacitance unidirectional fivefold ESD protection diode arrays
Fig 8. ESD clamping test setup and waveforms
006aab143
50
RZ
CZ
vertical scale = 200 V/div
horizontal scale = 50 ns/div
unclamped +1 kV ESD voltage waveform
(IEC 61000-4-2 network) clamped +1 kV ESD voltage waveform
(IEC 61000-4-2 network)
unclamped 1 kV ESD voltage waveform
(IEC 61000-4-2 network) clamped 1 kV ESD voltage waveform
(IEC 61000-4-2 network)
vertical scale = 200 V/div
horizontal scale = 50 ns/div vertical scale = 5 V/div
horizontal scale = 50 ns/div
GND
GND
GND1
GND2
GND
450
RG 223/U
50 coax
ESD TESTER
IEC 61000-4-2 network
CZ = 150 pF; RZ = 330
4 GHz DIGITAL
OSCILLOSCOPE
10×
ATTENUATOR
(1)
vertical scale = 5 V/div
horizontal scale = 50 ns/div
(1): attenuator is only used for open
socket high voltage measurements
PESD5V0L5UF/V/Y
PESD3V3L5UF/V/Y
DUT
Device
Under
Test
PESDXL5UF_V_Y_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 8 January 2008 10 of 17
NXP Semiconductors PESDxL5UF/V/Y
Low capacitance unidirectional fivefold ESD protection diode arrays
7. Application information
The devices are designed for the protection of up to five unidirectional data or signal lines
from the damage caused by ESD and surge pulses. The devices may be used on lines
where the signal polarities are both, positive and negative with respect to ground. The
devices provide a surge capability of 25 W per line for an 8/20 µs waveform each.
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)
and surge transients. The following guidelines are recommended:
1. Place the device as close to the input terminal or connector as possible.
2. The path length between the device and the protected line should be minimized.
3. Keep parallel signal paths to a minimum.
4. Avoid running protected conductors in parallel with unprotected conductors.
5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and
ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Ground planes should be used whenever possible. For multilayer PCBs, use ground
vias.
Fig 9. Typical application for unidirectional
application of five lines Fig 10. Typical application for bidirectional application
of four lines
006aab144
DUT
GND
high-speed data lines
006aab145
DUT
GND
high-speed data lines
EMJ L V 7 -- 77w --
PESDXL5UF_V_Y_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 8 January 2008 11 of 17
NXP Semiconductors PESDxL5UF/V/Y
Low capacitance unidirectional fivefold ESD protection diode arrays
8. Package outline
Fig 11. Package outline PESDxL5UF (SOT886) Fig 12. Package outline PESDxL5UV (SOT666)
Fig 13. Package outline PESDxL5UY (SOT363/SC-88)
04-07-22Dimensions in mm
0.25
0.17
0.40
0.32 0.35
0.27
0.5
0.6
1.05
0.95
1.5
1.4
0.5
0.50
max 0.04
max
3
2
1
4
5
6
Dimensions in mm 04-11-08
1.7
1.5
1.7
1.5
1.3
1.1
1
0.18
0.08
0.27
0.17
0.5
pin 1 index
123
456
0.6
0.5
0.3
0.1
06-03-16Dimensions in mm
0.25
0.10
0.3
0.2
pin 1
index
1.3
0.65
2.2
2.0 1.35
1.15
2.2
1.8 1.1
0.8
0.45
0.15
132
465
The indicated -xxx are the last three digits of the 12NC ordering code, p \ LJ
PESDXL5UF_V_Y_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 8 January 2008 12 of 17
NXP Semiconductors PESDxL5UF/V/Y
Low capacitance unidirectional fivefold ESD protection diode arrays
9. Packing information
[1] For further information and the availability of packing methods, see Section 13.
[2] T1: normal taping
[3] T4: 90° rotated reverse taping
[4] T2: reverse taping
10. Soldering
Table 10. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number Package Description Packing quantity
3000 4000 5000 8000 10000
PESD3V3L5UF SOT886 4 mm pitch, 8 mm tape and reel; T1 [2] - - -115 - -
4 mm pitch, 8 mm tape and reel; T4 [3] - - -132 - -
PESD5V0L5UF SOT886 4 mm pitch, 8 mm tape and reel; T1 [2] - - -115 - -
4 mm pitch, 8 mm tape and reel; T4 [3] - - -132 - -
PESD3V3L5UV SOT666 2 mm pitch, 8 mm tape and reel - - - -315 -
4 mm pitch, 8 mm tape and reel - -115 - - -
PESD5V0L5UV SOT666 2 mm pitch, 8 mm tape and reel - - - -315 -
4 mm pitch, 8 mm tape and reel - -115 - - -
PESD3V3L5UY SOT363 4 mm pitch, 8 mm tape and reel; T1 [2] -115 - - - -135
4 mm pitch, 8 mm tape and reel; T2 [4] -125 - - - -165
PESD5V0L5UY SOT363 4 mm pitch, 8 mm tape and reel; T1 [2] -115 - - - -135
4 mm pitch, 8 mm tape and reel; T2 [4] -125 - - - -165
Reflow soldering is the only recommended soldering method.
Fig 14. Reflow soldering footprint PESDxL5UF (SOT886)
sot886_fr
solder lands
occupied area
solder paste
Dimensions in mm
0.425
(6×)
1.250
0.675
1.700
0.325
(6×)
0.270
(6×)
0.370
(6×)
0.500
0.500
H m + + fllr , :WW: , Lr ‘\ ‘47 ‘‘‘‘ FH H 3%: , \
PESDXL5UF_V_Y_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 8 January 2008 13 of 17
NXP Semiconductors PESDxL5UF/V/Y
Low capacitance unidirectional fivefold ESD protection diode arrays
Reflow soldering is the only recommended soldering method.
Fig 15. Reflow soldering footprint PESDxL5UV (SOT666)
Fig 16. Reflow soldering footprint PESDxL5UY (SOT363/SC-88)
solder lands
solder resist
placement area
occupied area
0.075
Dimensions in mm
2.75
2.45
2.10
1.60
1.20
2.20
2.50
2.00 1.70 1.00 0.30 (2×)
0.15
(4×)
0.375
(4×)
0.40
(6×)
0.55
(2×)
sot363
1.20
2.40
0.50
(4×)
0.40
(2×)0.90 2.10
0.50
(4×)
0.60
(2×)
2.35
2.65
solder lands
solder resist
occupied area
solder paste
Dimensions in mm
PESDXL5UF_V_Y_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 8 January 2008 14 of 17
NXP Semiconductors PESDxL5UF/V/Y
Low capacitance unidirectional fivefold ESD protection diode arrays
Fig 17. Wave soldering footprint PESDxL5UY (SOT363/SC-88)
solder lands
solder resist
occupied area
1.15
3.75
transport direction during soldering
1.000.30 4.00
4.50
5.25
sot363
Dimensions in mm
PESDXL5UF_V_Y_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 8 January 2008 15 of 17
NXP Semiconductors PESDxL5UF/V/Y
Low capacitance unidirectional fivefold ESD protection diode arrays
11. Revision history
Table 11. Revision history
Document ID Release date Data sheet status Change notice Supersedes
PESDXL5UF_V_Y_2 20080108 Product data sheet - PESD3V3L5UV_
PESD5V0L5UV_1
PESD3V3L5UY_
PESD5V0L5UY_1
Modifications: The format of this data sheet has been redesigned to comply with the new
identity guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Type numbers PESD3V3L5UF and PESD5V0L5UF added
Table 1 “Product overview”: added
Section 4 “Marking”: marking code for PESD3V3L5UV amended
Section 4 “Marking”: marking code for PESD5V0L5UV amended
Section 4 “Marking”: marking code for PESD3V3L5UY amended
Section 4 “Marking”: marking code for PESD5V0L5UY amended
Figure 7: added
Section 9 “Packing information”: added
Section 10 “Soldering”: added
Section 12 “Legal information”: updated
PESD3V3L5UV_PESD5V0L5UV_1 20040323 Product specification - -
PESD3V3L5UY_PESD5V0L5UY_1 20040323 Product specification - -
PESDXL5UF_V_Y_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 8 January 2008 16 of 17
NXP Semiconductors PESDxL5UF/V/Y
Low capacitance unidirectional fivefold ESD protection diode arrays
12. Legal information
12.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
12.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: salesaddresses@nxp.com
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
founded by PHILIPS
NXP Semiconductors PESDxL5UF/V/Y
Low capacitance unidirectional fivefold ESD protection diode arrays
© NXP B.V. 2008. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 8 January 2008
Document identifier: PESDXL5UF_V_Y_2
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
14. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 2
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 3
4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4
6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
7 Application information. . . . . . . . . . . . . . . . . . 10
8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11
9 Packing information. . . . . . . . . . . . . . . . . . . . . 12
10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 15
12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 16
12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 16
12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
12.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 16
13 Contact information. . . . . . . . . . . . . . . . . . . . . 16
14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

Products related to this Datasheet

TVS DIODE 5V 12V 6TSSOP
TVS DIODE 3.3V 12V 6TSSOP
TVS DIODE 5V 12V 6TSSOP
TVS DIODE 3.3V 12V 6XSON SOT886
TVS DIODE 5V 12V SOT666
TVS DIODE 5V 12V SOT666
TVS DIODE 5V 12V 6XSON SOT886
TVS DIODE 5V 12V SOT666
TVS DIODE 3.3V 12V 6TSSOP
TVS DIODE 5V 12V 6TSSOP
TVS DIODE 3.3V 12V 6XSON SOT886
TVS DIODE 5V 12V 6TSSOP
TVS DIODE 3.3V 12V SOT666
TVS DIODE 5V 12V SOT666
TVS DIODE 3.3V 12V 6TSSOP
TVS DIODE 5V 12V 6TSSOP
TVS DIODE 5V 12V 6XSON SOT886
TVS DIODE 5V 12V 6XSON SOT886
TVS DIODE 5V 12V SOT666
TVS DIODE 3.3V 12V SOT666
TVS DIODE 3.3V 12V 6XSON SOT886
TVS DIODE 3.3V 12V SOT666
TVS DIODE 5V 12V 6TSSOP
TVS DIODE 5V 12V SOT666
TVS DIODE 5V 12V SOT363