PMEGxx10BEA,V Datasheet by Nexperia USA Inc.

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DATA SHEET
Product data sheet
Supersedes data of 2004 Apr 02
2004 Jun 14
DISCRETE SEMICONDUCTORS
PMEGXX10BEA;
PMEGXX10BEV
1 A very low VF MEGA Schottky
barrier rectifier
F MEGA Schottky QUICK REFERENCE D SYMBOL PARA I; lorward VR reverse MD package SOT23- PINNING PIN PMEGXX1OBEA (see on 1 2 PMEGXX1DBEV (see 1, 2, 5, a 3, 4 ns. Planar Maximum Elficiency General Application (MEGA) Schottky barrier rectilier with an integrated guard ring tor 1 stress protection, encapsulated in a very small 500323 | 7%» (50776) and ultra small SOT666 SMD plastic package. MARKING TVPE NUMBER MARKING CODE PMEGZO1OBEA V1 PMEGSO1OBEA V2 PMEG401OBEA V3 PMEGZO1OBEV G6 PMEGSO1OBEV GS PMEG401OBEV (34 H H H 4% 0 LI Ll Li 1 2 3 2004 Jun 14 2
2004 Jun 14 2
NXP Semiconductors Product data sheet
1 A very low VF MEGA Schottky
barrier rectifier
PMEGXX10BEA;
PMEGXX10BEV
FEATURES
Forward current: 1 A
Reverse voltages: 20 V, 30 V, 40 V
Very low forward voltage
Ultra small and very small plastic SMD package
Power dissipation comparable to SOT23.
APPLICATIONS
High efficiency DC-to-DC conversion
Voltage clamping
Protection circuits
Low voltage rectification
Blocking diodes
Low power consumption applications.
DESCRIPTION
Planar Maximum Efficiency General Application (MEGA)
Schottky barrier rectifier with an integrated guard ring for
stress protection, encapsulated in a very small SOD323
(SC-76) and ultra small SOT666 SMD plastic package.
MARKING
QUICK REFERENCE DATA
PINNING
TYPE NUMBER MARKING CODE
PMEG2010BEA V1
PMEG3010BEA V2
PMEG4010BEA V3
PMEG2010BEV G6
PMEG3010BEV G5
PMEG4010BEV G4
SYMBOL PARAMETER MAX. UNIT
IFforward current 1 A
VRreverse voltage 20; 30; 40 V
PIN DESCRIPTION
PMEGXX10BEA (see Fig.1)
1cathode
2anode
PMEGXX10BEV (see Fig.2)
1, 2, 5, 6 cathode
3, 4 anode
sym00
1
12
2
1
Fig.1 Simplified outline (SOD323; SC-76) and
symbol.
The marking bar indicates the cathode.
123
456
sym03
8
1
,2
5
,6 3,
4
Fig.2 Simplified outline (SOT666) and symbol.
2004 Jun 14 3
NXP Semiconductors Product data sheet
1 A very low VF MEGA Schottky
barrier rectifier
PMEGXX10BEA;
PMEGXX10BEV
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Refer to SOD323 (SC-76) and SOT666 standard mounting conditions.
2. Only valid if pins 3 and 4 are connected in parallel (SOT666 package).
3. For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses
PR are a significant part of the total power losses. Nomograms for determining the reverse power losses PR and IF(AV)
rating will be available on request.
TYPE NUMBER PACKAGE
NAME DESCRIPTION VERSION
PMEGXX10BEA plastic surface mounted package; 2 leads SOD323
PMEGXX10BEV plastic surface mounted package; 6 leads SOT666
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VRcontinuous reverse voltage
PMEG2010BEA/PMEG2010BEV 20 V
PMEG3010BEA/PMEG3010BEV 30 V
PMEG4010BEA/PMEG4010BEV 40 V
IFcontinuous forward current Ts 55 °C; note 1 1 A
IFRM repetitive peak forward current tp 1 ms; δ 0.5; note 2 3.5 A
IFSM non-repetitive peak forward current tp = 8 ms; square wave;
note 2
10 A
Tjjunction temperature note 3 150 °C
Tamb operating ambient temperature note 3 65 +150 °C
Tstg storage temperature 65 +150 °C
2004 Jun 14 4
NXP Semiconductors Product data sheet
1 A very low VF MEGA Schottky
barrier rectifier
PMEGXX10BEA;
PMEGXX10BEV
THERMAL CHARACTERISTICS
Notes
1. Refer to SOD323 (SC-76) standard mounting conditions.
2. For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses
PR are a significant part of the total power losses. Nomograms for determining the reverse power losses PR and IF(AV)
rating will be available on request.
3. Device mounted on an FR4 printed-circuit board with copper clad 10 × 10 mm.
4. Solder point of cathode tab.
5. Refer to SOT666 standard mounting conditions.
6. Only valid if pins 3 and 4 are connected in parallel (SOT666 package).
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
Note
1. Pulse test: tp 300 μs; δ 0.02.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
PMEGXX10BEA (SOD323)
Rth(j-a) thermal resistance from junction to
ambient
in free air; notes 1 and 2 450 K/W
in free air; notes 2 and 3 210 K/W
Rth(j-s) thermal resistance from junction to
soldering point
note 4 90 K/W
PMEGXX10BEV (SOT666)
Rth(j-a) thermal resistance from junction to
ambient
in free air; notes 2 and 5 405 K/W
in free air; notes 2 and 6 215 K/W
Rth(j-s) thermal resistance from junction to
soldering point
note 4 80 K/W
SYMBOL PARAMETER CONDITIONS
PMEG2010BEA/
PMEG2010BEV PMEG3010BEA/
PMEG3010BEV PMEG4010BEA/
PMEG4010BEV UNIT
TYP. MAX. TYP. MAX. TYP. MAX.
VFforward voltage IF = 0.1 mA 90 130 90 130 95 130 mV
IF = 1 mA 150 190 150 200 155 210 mV
IF = 10 mA 210 240 215 250 220 270 mV
IF = 100 mA 280 330 285 340 295 350 mV
IF = 500 mA 355 390 380 430 420 470 mV
IF = 1 000 mA 420 500 450 560 540 640 mV
IRcontinuous
reverse current
VR = 10 V; note 1 15 40 12 30 720 μA
VR = 20 V; note 1 40 200 −−−−μA
VR = 30 V; note 1 −−40 150 − − μA
VR = 40 V; note 1 −−−−30 100 μA
Cddiode capacitance VR = 1 V; f = 1 MHz 66 80 55 70 43 50 pF
2004 Jun 14 5
NXP Semiconductors Product data sheet
1 A very low VF MEGA Schottky
barrier rectifier
PMEGXX10BEA;
PMEGXX10BEV
GRAPHICAL DATA
handbook, halfpage
0.6
VF (V)
0.4
IF
(mA)
0.20
104
103
102
10
1
101
MHC673
(1) (2) (3)
Fig.3 Forward current as a function of forward
voltage; typical values.
PMEG2010BEA/PMEG2010BEV
(1) Tamb = 150 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
handbook, halfpage
20105015
MHC674
105
104
103
102
10
1
VR (V)
IR
(μA) (1)
(3)
(2)
Fig.4 Reverse current as a function of reverse
voltage; typical values.
PMEG2010BEA/PMEG2010BEV
(1) Tamb = 150 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
handbook, halfpage
0 5 10 20
VR (V)
120
140
100
0
40
20
80
60
15
Cd
(pF)
MHC675
Fig.5 Diode capacitance as a function of reverse
voltage; typical values.
PMEG2010BEA/PMEG2010BEV
Tamb = 25 °C; f = 1 MHz.
handbook, halfpage
0.6
VF (V)
0.4
IF
(mA)
0.20
104
103
102
10
1
101
MHC676
(1) (2) (3)
Fig.6 Forward current as a function of forward
voltage; typical values.
PMEG3010BEA/PMEG3010BEV
(1) Tamb = 150 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
2004 Jun 14 6
NXP Semiconductors Product data sheet
1 A very low VF MEGA Schottky
barrier rectifier
PMEGXX10BEA;
PMEGXX10BEV
30
VR (V)
1050202515
IR
(μA)
105
104
103
102
10
1
MHC677
(1)
(3)
(2)
Fig.7 Reverse current as a function of reverse
voltage; typical values.
PMEG3010BEA/PMEG3010BEV
(1) Tamb = 150 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
handbook, halfpage
0 5 10 20
VR (V)
120
100
0
40
20
80
60
15
Cd
(pF)
MHC678
Fig.8 Diode capacitance as a function of reverse
voltage; typical values.
PMEG3010BEA/PMEG3010BEV
Tamb = 25 °C; f = 1 MHz.
handbook, halfpage
0.6
VF (V)
0.4
IF
(mA)
0.20
104
103
102
10
1
101
MHC679
(1) (2) (3)
Fig.9 Forward current as a function of forward
voltage; typical values.
PMEG4010BEA/PMEG4010BEV
(1) Tamb = 150 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
handbook, halfpage
402010030
MHC680
105
104
103
102
10
1
VR (V)
IR
(μA) (1)
(3)
(2)
Fig.10 Reverse current as a function of reverse
voltage; typical values.
PMEG4010BEA/PMEG4010BEV
(1) Tamb = 150 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
2004 Jun 14 7
NXP Semiconductors Product data sheet
1 A very low VF MEGA Schottky
barrier rectifier
PMEGXX10BEA;
PMEGXX10BEV
handbook, halfpage
0 5 10 20
100
0
80
15
60
40
20
MHC681
VR (V)
Cd
(pF)
Fig.11 Diode capacitance as a function of reverse
voltage; typical values.
PMEG4010BEA/PMEG4010BEV
Tamb = 25 °C; f = 1 MHz.
2mm LA_A_A_A_A_A_A_A_AJ_A_A_A_A_A_A_A_A_AJ 5:312 DIMENSIONS (mm m Ihe orlglnal dlmenslans) A UNIT A ma‘x hp 1: D E Hg LP a v 11 040 025 1a 135 27 045 025 mm 08 “05 025 010 16 115 23 015 015 “2 Note 1 The mamng bar mmcates me camode OUTLINE REFERENCES Eu VERSION IEC JEDEC JEITA PR SOD323 5.0776 g@ 2004 Jun 14
2004 Jun 14 8
NXP Semiconductors Product data sheet
1 A very low VF MEGA Schottky
barrier rectifier
PMEGXX10BEA;
PMEGXX10BEV
PACKAGE OUTLINES
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
SOD323 SC-76
SOD32
03-12-17
06-03-16
Note
1. The marking bar indicates the cathode
UNIT A
mm 0.05
1.1
0.8 0.40
0.25 0.25
0.10 1.8
1.6 1.35
1.15 2.7
2.3 0.45
0.15
A1
max
DIMENSIONS (mm are the original dimensions)
lastic surface-mounted package; 2 leads
01
(1)
21
2 mm
scale
bpc D E HDQ
0.25
0.15
Lpv
0.2
A
D
A
E
Lp
bp
detail X
A1
c
Q
HDvA
M
X
sca‘e DIMENSIONS (mm are the original dimensions) UNIT up c D E e 2‘ ME Lp w y a 27 a 18 1 7 1 a 1 7 o 3 mm on nos 15 n “7 ”5 15 ow 0‘ 0‘ OUTLINE REFERENCES EUROPEAN ISSUE D VERSION .Ec JEDEC JEI” PROJECIION E}@ W 2004 Jun 14 9
2004 Jun 14 9
NXP Semiconductors Product data sheet
1 A very low VF MEGA Schottky
barrier rectifier
PMEGXX10BEA;
PMEGXX10BEV
UNIT bpcDE e1HELpw
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION ISSUE DATE
04-11-08
06-03-16
IEC JEDEC JEITA
mm 0.27
0.17 0.18
0.08 1.7
1.5 1.3
1.1 0.5
e
1.0 1.7
1.5 0.1
y
0.1
DIMENSIONS (mm are the original dimensions)
0.3
0.1
SOT666
bp
pin 1 index
D
e1
e
A
Lp
detail X
HE
E
A
S
0 1 2 mm
scale
A
0.6
0.5
c
X
123
456
Plastic surface-mounted package; 6 leads SOT66
6
YS
wMA
2004 Jun 14 10
NXP Semiconductors Product data sheet
1 A very low VF MEGA Schottky
barrier rectifier
PMEGXX10BEA;
PMEGXX10BEV
DATA SHEET STATUS
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for product
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product specification.
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does not give any representations or warranties,
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of such information and shall have no liability for the
consequences of use of such information.
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reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
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Applications Applications that are described herein for
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warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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Quick reference data The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
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Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Printed in The Netherlands R76/04/pp11 Date of release: 2004 Jun 14 Document order number: 9397 750 13234

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