PZT3904T1G Datasheet by ON Semiconductor

View All Related Products | Download PDF Datasheet
0N Semicom‘luctor® ULIU
© Semiconductor Components Industries, LLC, 2013
September, 2013 − Rev. 6 1Publication Order Number:
PZT3904T1/D
PZT3904T1G
General Purpose Transistor
NPN Silicon
Features
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
CollectorEmitter Voltage VCEO 40 Vdc
CollectorBase Voltage VCBO 60 Vdc
EmitterBase Voltage VEBO 6.0 Vdc
Collector Current − Continuous IC200 mAdc
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation (Note 1)
TA = 25°CPD1.5
12 W
mW/°C
Thermal Resistance
Junction−to−Ambient (Note 1) RqJA 83.3
°C/W
Thermal Resistance
Junction−to−Lead #4 RqJA 35
°C/W
Junction and Storage Temperature
Range TJ, Tstg 55 to +150 °C
1. FR−4 with 1 oz and 713 mm2 of copper area.
http://onsemi.com
COLLECTOR
2, 4
1
BASE
3
EMITTER
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
Device Package Shipping
ORDERING INFORMATION
PZT3904T1G SOT−223
(Pb−Free)
1,000 / Tape & Ree
l
SOT−223
CASE 318E
STYLE 1
MARKING DIAGRAM
1
AYW
1AM G
G
1AM = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
G= Pb−Free Package
(Note: Microdot may be in either location)
SPZT3904T1G SOT−223
(Pb−Free)
1,000 / Tape & Ree
l
123
4
ELECTRICAL CHARACTERISTICS (TA = 25°C Characteristic ‘ i | ‘ OFF CHARACTERISTICS (Note 2) CCHCCICrrEmIIIer Breakdown VoIIage INdIe 3) {IO = CCHCCICrrBaSe Breakdown vdIIage HG = m “Ade, EmrIIereBase Breakdown vdIIage (IE = 10 “Ada, ic Base Cum" Current (VCE = 30 Vdc, vEB e 3.0 Vch CCHCCICI Cuiofl Curreni IVCE e 30 Vdc. vEB = 3.0 v ON CHARACTERISTICS mm 3) DC Currem GaIrI (Note 2) (ic = .1 mAdC vCE = .0 WC) ic - 1.0 mAdC vc - 1.0 WC) 0 mAcIc, ch 1.0 Vch o mAcIc, ch 1.0 Vch 00 mAdc, vCE = 1 o VdC) CoiiecmpEmmer Samrandn vdIIage (Note 3) (IC 0 mac. IE - 1.0 mAdC) (ic 0 mAcIc, IE : 5.0 mAdC) Base eEmIIIer Saiuramn VoIIage (Nate 3) (IC 0 mAcIc, IE : 1.0 mAdC) (IC 0 mAcIc, IE : 5.u mAdC) SMALL—SIGNAL CHARACTERISTICS CurrenIeGaIn , Bandedih PrdducI IIC =10 rnAdc, Output Capacuance IVCE = 5.0 Vdc iE = o I = 1,0 M Input CapaCIlanCe (VEE : 05 Vdc IC : n, I = I 0 MH Input Impedance (VCE : Io Vdc, IC =1 0 mAcIc, I e VoIIage Feedback Ram (VCE e In Vdc. ic e 1.0 mA SmaHrSIgnai Curreni GaIrI (VCE =10 Vdc, IC =10 OquuI AdrmIIance IVCE =10 Vdc. IC = 1.0 mAdC I NCISe FIgure (VCE e 50 Vdc, IC = 100 “Add, R SWITCHING CHARACTERISTICS BeIay TIme (Vcc RISe TIme 'c = Siorage TIme Fali TIme IC = ‘ 2. FFLS =10 X 0.75 X 0,062 In 3. PuIse Tesi. PuiSe WIdIh s 300 us. Duiy CycIe s Figure 1. Delay and Rise Time Figure 2. Storage and Fall Tim Equivaleni Tesl Circuit Equivaleni Tesl Circuit hllp ://onsemi.com 2
PZT3904T1G
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS (Note 2)
CollectorEmitter Breakdown Voltage (Note 3) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 40 Vdc
CollectorBase Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CBO 60 −
EmitterBase Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 6.0 −
Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) IBL 50 nAdc
Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) ICEX − 50
ON CHARACTERISTICS (Note 3)
DC Current Gain (Note 2)
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 50 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
HFE 40
70
100
60
30
300
CollectorEmitter Saturation Voltage (Note 3)
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
VCE(sat)
0.2
0.3
Vdc
BaseEmitter Saturation Voltage (Note 3)
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
VBE(sat) 0.65
0.85
0.95
Vdc
SMALL−SIGNAL CHARACTERISTICS
CurrentGain − Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) fT300 − MHz
Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Cobo 5.0 pF
Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo − 8.0
Input Impedance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) hie 1.0 10 kW
Voltage Feedback Ratio (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) hre 0.5 8.0 X 10−4
SmallSignal Current Gain (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) hfe 100 400
Output Admittance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) hoe 1.0 40 mMhos
Noise Figure (VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 kW, f = 1.0 kHz) nF 5.0 dB
SWITCHING CHARACTERISTICS
Delay Time (VCC = 3.0 Vdc, VBE = −0.5 Vdc,
IC = 10 mAdc, IB1 = 1.0 mAdc)
td 35 ns
Rise Time tr− 35
Storage Time (VCC = 3.0 Vdc,
IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc)
ts− 200
Fall Time tf− 50
2. FR−5 = 1.0 0.75 0.062 in.
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
Figure 1. Delay and Rise Time
Equivalent Test Circuit Figure 2. Storage and Fall Time
Equivalent Test Circuit
+3 V
275
10 k
1N916 CS < 4 pF*
+3 V
275
10 k
CS < 4 pF*
< 1 ns
-0.5 V
+10.9 V
300 ns
DUTY CYCLE = 2%
< 1 ns
-9.1 V
+10.9 V
DUTY CYCLE = 2%
t1
0
10 < t1 < 500 ms
* Total shunt capacitance of test jig and connectors
PZT3904T1G
http://onsemi.com
3
TYPICAL TRANSIENT CHARACTERISTICS
Figure 3. Capacitance
REVERSE BIAS VOLTAGE (VOLTS)
2.0
3.0
5.0
7.0
10
1.0
0.1
Figure 4. Charge Data
IC, COLLECTOR CURRENT (mA)
5000
1.0
VCC = 40 V
IC/IB = 10
Q, CHARGE (pC)
3000
2000
1000
500
300
200
700
100
50
70
2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
CAPACITANCE (pF)
1.0 2.0 3.0 5.0 7.0 10 20 30 40
0.2 0.3 0.5 0.7
QT
QA
Cibo
Cobo
TJ = 25°C
TJ = 125°C
Figure 5. TurnOn Time
IC, COLLECTOR CURRENT (mA)
70
100
200
300
500
50
Figure 6. Rise Time
IC, COLLECTOR CURRENT (mA)
TIME (ns)
1.0 2.0 3.0 10 20 70
5100
t , RISE TIME (ns)
Figure 7. Storage Time
IC, COLLECTOR CURRENT (mA)
Figure 8. Fall Time
IC, COLLECTOR CURRENT (mA)
5.0 7.0 30 50 200
10
30
7
20
70
100
200
300
500
50
1.0 2.0 3.0 10 20 70
5100
5.0 7.0 30 50 200
10
30
7
20
70
100
200
300
500
50
1.0 2.0 3.0 10 20 70
5100
5.0 7.0 30 50 200
10
30
7
20
70
100
200
300
500
50
1.0 2.0 3.0 10 20 70
5100
5.0 7.0 30 50 200
10
30
7
20
r
t , FALL TIME (ns)
f
t , STORAGE TIME (ns)
s
VCC = 40 V
IC/IB = 10
VCC = 40 V
IB1 = IB2
IC/IB = 20
IC/IB = 10
IC/IB = 10
tr @ VCC = 3.0 V
td @ VOB = 0 V
40 V
15 V
2.0 V
IC/IB = 10
IC/IB = 20
IC/IB = 10
IC/IB = 20
ts = ts - 1/8 tf
IB1 = IB2
PZT3904T1G
http://onsemi.com
4
TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(VCE = 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)
Figure 9.
f, FREQUENCY (kHz)
4
6
8
10
12
2
0.1
Figure 10.
RS, SOURCE RESISTANCE (k W)
0
NF, NOISE FIGURE (dB)
1.0 2.0 4.0 10 20 40
0.2 0.4
0100
4
6
8
10
12
2
14
0.1 1.0 2.0 4.0 10 20 40
0.2 0.4 100
NF, NOISE FIGURE (dB)
f = 1.0 kHz IC = 1.0 mA
IC = 0.5 mA
IC = 50 mA
IC = 100 mA
SOURCE RESISTANCE = 200 W
IC = 1.0 mA
SOURCE RESISTANCE = 200 W
IC = 0.5 mA
SOURCE RESISTANCE = 500 W
IC = 100 mA
SOURCE RESISTANCE = 1.0 k
IC = 50 mA
Figure 11. Current Gain
IC, COLLECTOR CURRENT (mA)
70
100
200
300
50
Figure 12. Output Admittance
IC, COLLECTOR CURRENT (mA)
h , CURRENT GAIN
h , OUTPUT ADMITTANCE ( mhos)
Figure 13. Input Impedance
IC, COLLECTOR CURRENT (mA)
Figure 14. Voltage Feedback Ratio
IC, COLLECTOR CURRENT (mA)
30
100
50
5
10
20
2.0
3.0
5.0
7.0
10
1.0
0.1 0.2 1.0 2.0 5.0
0.5 10
0.3 0.5 3.0
0.7
2.0
5.0
10
20
1.0
0.2
0.5
oe
h , VOLTAGE FEEDBACK RATIO (X 10 )
re
h , INPUT IMPEDANCE (k OHMS)
ie
0.1 0.2 1.0 2.0 5.0 10
0.3 0.5 3.0
0.1 0.2 1.0 2.0 5.0 10
0.3 0.5 3.0
2
1
0.1 0.2 1.0 2.0 5.0 10
0.3 0.5 3.0
fe
m
-4
h PARAMETERS
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C)
+25% To MZSCC Uvc FOR VcELszw , 55‘0 TO +25°C
PZT3904T1G
http://onsemi.com
5
TYPICAL STATIC CHARACTERISTICS
Figure 15. DC Current Gain
IC, COLLECTOR CURRENT (mA)
0.3
0.5
0.7
1.0
2.0
0.2
0.1
h , DC CURRENT GAIN (NORMALIZED)
0.5 2.0 3.0 10 50 70
0.2 0.3
0.1 100
1.00.7 200
30205.0 7.0
FE
VCE = 1.0 V
TJ = +125°C
+25°C
-55°C
Figure 16. Collector Saturation Region
IB, BASE CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
0.1
V , COLLECTOR EMITTER VOLTAGE (VOLTS)
0.5 2.0 3.0 100.2 0.3
01.00.7 5.0 7.0
CE
IC = 1.0 mA
TJ = 25°C
0.070.050.030.020.01
10 mA 30 mA 100 mA
Figure 17. “ON” Voltages
IC, COLLECTOR CURRENT (mA)
0.4
0.6
0.8
1.0
1.2
0.2
Figure 18. Temperature Coefficients
IC, COLLECTOR CURRENT (mA)
V, VOLTAGE (VOLTS)
1.0 2.0 5.0 10 20 50
0100
-0.5
0
0.5
1.0
0 60 80 120 140 160 180
20 40 100
COEFFICIENT (mV/ C)
200
-1.0
-1.5
-2.0
200
°
TJ = 25°C
VBE(sat) @ IC/IB =10
VCE(sat) @ IC/IB =10
VBE @ VCE =1.0 V
+25°C TO +125°C
-55°C TO +25°C
+25°C TO +125°C
-55°C TO +25°C
qVC FOR VCE(sat)
qVB FOR VBE(sat)
PZT3904T1G
http://onsemi.com
6
TYPICAL CHARACTERISTICS
Figure 19. Safe Operating Area
VCE, COLLECTOR−EMITTER VOLTAGE (V)
101
0.01
0.1
IC, COLLECTOR CURRENT (A)
10 ms
1.0 s
1
100
oaa 05¢ m5 nus: 0037 Hum LE % 57m 700 73:: MM 0275 mm 1 , 1 7,7,4," ,7, 1 1 L W1, W ,1,,,,\ v 1 1 1 age 1””
PZT3904T1G
http://onsemi.com
7
PACKAGE DIMENSIONS
SOT−223 (TO−261)
CASE 318E−04
ISSUE N
A1
b1
D
E
b
e
e1
4
123
0.08 (0003)
A
L1
C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCH.
1.5
0.059 ǒmm
inchesǓ
SCALE 6:1
3.8
0.15
2.0
0.079
6.3
0.248
2.3
0.091
2.3
0.091
2.0
0.079
SOLDERING FOOTPRINT*
HEDIM
AMIN NOM MAX MIN
MILLIMETERS
1.50 1.63 1.75 0.060
INCHES
A1 0.02 0.06 0.10 0.001
b0.60 0.75 0.89 0.024
b1 2.90 3.06 3.20 0.115
c0.24 0.29 0.35 0.009
D6.30 6.50 6.70 0.249
E3.30 3.50 3.70 0.130
e2.20 2.30 2.40 0.087
0.85 0.94 1.05 0.033
0.064 0.068
0.002 0.004
0.030 0.035
0.121 0.126
0.012 0.014
0.256 0.263
0.138 0.145
0.091 0.094
0.037 0.041
NOM MAX
L1 1.50 1.75 2.00 0.060
6.70 7.00 7.30 0.264 0.069 0.078
0.276 0.287
HE
e1
0°10°0°10°
q
q
L
L0.20 −−− −−− 0.008 −−− −−−
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where
personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and
its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,
any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
P
UBLICATION ORDERING INFORMATION
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
PZT3904T1/D
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your loc
al
Sales Representative

Products related to this Datasheet

TRANS NPN 40V 0.2A SOT223
TRANS NPN 40V 0.2A SOT223
TRANS NPN 40V 0.2A SOT223
TRANS NPN 40V 0.2A SOT223
TRANS NPN 40V 0.2A SOT223
TRANS NPN 40V 0.2A SOT223