NTJD5121N, NVJD5121N Datasheet by ON Semiconductor

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© Semiconductor Components Industries, LLC, 2015
May, 2019 Rev. 9
1Publication Order Number:
NTJD5121N/D
NTJD5121N, NVJD5121N
MOSFET – Power, Dual,
N-Channel With ESD
Protection, SC-88
60 V, 295 mA
Features
Low RDS(on)
Low Gate Threshold
Low Input Capacitance
ESD Protected Gate
NV Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AECQ101 Qualified and
PPAP Capable
This is a PbFree Device
Applications
Low Side Load Switch
DCDC Converters (Buck and Boost Circuits)
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter Symbol Value Unit
DraintoSource Voltage VDSS 60 V
GatetoSource Voltage VGS ±20 V
Continuous Drain
Current (Note 1)
Steady
State
TA = 25°CID295 mA
TA = 85°C 212
t 5 s TA = 25°C 304
TA = 85°C 219
Power Dissipation
(Note 1)
Steady
State
TA = 25°C PD250 mW
t 5 s 266
Pulsed Drain Current tp = 10 msIDM 900 mA
Operating Junction and Storage Temperature TJ, TSTG 55 to
150
°C
Source Current (Body Diode) IS210 mA
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s) TL260 °C
GateSource ESD Rating (HBM) ESDHBM 2000 V
GateSource ESD Rating (MM) ESDMM 200 V
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE RATINGS
Top View
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SC88 (SOT363)
D1
G2
S2
S1
G1
6
5
4
1
2
3
V(BR)DSS RDS(on) MAX ID Max
60 V
1.6 W @ 10 V
2.5 W @ 4.5 V
295 mA
D2
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MARKING DIAGRAM &
PIN ASSIGNMENT
XX M G
G
1
6
1
XX = Device Code
M = Date Code
G= PbFree Package
D1 G2 S2
S1 G1 D2
(Note: Microdot may be in either location)
SC88/SOT363
CASE 419B
STYLE 26
See detailed ordering and shipping information ion page 6 of
this data sheet.
ORDERING INFORMATION
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NTJD5121N, NVJD5121N
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2
Parameter Symbol Value Unit
JunctiontoAmbient – Steady State RqJA 467 °C/W
JunctiontoAmbient – t 5 s RqJA 412
JunctiontoLead – Steady State RqJL 252
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [2 oz] including traces).
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NTJD5121N, NVJD5121N
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3
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated)
Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA60 V
DraintoSource Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJID = 250 mA, ref to 25°C92 mV/°C
Zero Gate Voltage Drain Current IDSS VGS = 0 V,
VDS = 60 V
TJ = 25°C 1.0 mA
TJ = 125°C 500
GatetoSource Leakage Current IGSS VDS = 0 V, VGS = ±20 V±10 mA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA1.0 1.7 2.5 V
Negative Threshold Temperature
Coefficient
VGS(TH)/TJ4.0 mV/°C
DraintoSource On Resistance RDS(on) VGS = 10 V, ID = 500 mA 1.0 1.6 W
VGS = 4.5 V, ID = 200 mA 1.2 2.5
Forward Transconductance gFS VDS = 5 V, ID = 200 mA 80 S
Gate Resistance RG536 W
CHARGES AND CAPACITANCES
Input Capacitance CISS
VGS = 0 V, f = 1.0 MHz,
VDS = 20 V
26 pF
Output Capacitance COSS 4.4
Reverse Transfer Capacitance CRSS 2.5
Total Gate Charge QG(TOT)
VGS = 4.5 V, VDS = 25 V,
ID = 200 mA
0.9 nC
Threshold Gate Charge QG(TH) 0.2
GatetoSource Charge QGS 0.3
GatetoDrain Charge QGD 0.28
SWITCHING CHARACTERISTICS (Note 3)
TurnOn Delay Time td(on)
VGS = 4.5 V, VDD = 25 V,
ID = 200 mA, RG = 25 W
22 ns
Rise Time tr34
TurnOff Delay Time td(off) 34
Fall Time tf32
DRAINSOURCE DIODE CHARACTERISTICS
Forward Diode Voltage VSD VGS = 0 V,
IS = 200 mA
TJ = 25°C 0.8 1.2 V
TJ = 85°C 0.7
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: pulse width 300 ms, duty cycle 2%.
3. Switching characteristics are independent of operating junction temperatures.
25°C , a ‘ , 125 c -55°c T J : 125°C ’ TJ : 5%/ TJ :1251: ,M w n : a“ T J : 25°C ’...--— ,fl’r \ T J : 25%: TJ : —55¢c ”dd” T J : .55°c ID : 500 mA DHAI NATO! SOURCE H
NTJD5121N, NVJD5121N
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TYPICAL PERFORMANCE CURVES
(TJ = 25°C unless otherwise noted)
0
0.4
0.8
1.2
1.6
012345
VDS, DRAINTOSOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 1. OnRegion Characteristics
TJ = 25°C
5 V VGS = 10
4.5 V
4.2 V 4 V
3.8 V
3.6 V
3.4 V
3.2 V
3 V
2.4 V
2.8 V
2.6 V
2.2 V
0
0.2
0.4
0.6
0.8
1
1.2
012345
Figure 2. Transfer Characteristics
VGS, GATETOSOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
55°C
25°C
VDS 10 V
TJ = 125°C
0
0.4
0.8
1.2
1.6
2
2.4
0 0.2 0.4 0.6 0.8 1
Figure 3. OnResistance vs. Drain Current and
Temperature
ID, DRAIN CURRENT (A)
RDS(on), DRAINTOSOURCE RESISTANCE (W)
TJ = 125°C
VGS = 4.5 V
TJ = 85°C
TJ = 25°C
TJ = 55°C
0
0.4
0.8
1.2
1.6
2
2.4
0 0.2 0.4 0.6 0.8 1
Figure 4. OnResistance vs. Drain Current and
Temperature
ID, DRAIN CURRENT (A)
RDS(on), DRAINTOSOURCE RESISTANCE (W)
TJ = 125°C
VGS = 10 V
TJ = 55°C
TJ = 25°C
TJ = 85°C
0.8
1.2
1.6
2
2.4
246810
Figure 5. OnResistance versus
GatetoSource Voltage
VGS, GATETOSOURCE VOLTAGE (V)
RDS(on), DRAINTOSOURCE RESISTANCE (W)
ID = 500 mA
ID = 200 mA
0.6
0.8
1
1.2
1.4
1.6
1.8
50 25 0 25 50 75 100 125 150
Figure 6. OnResistance Variation with
Temperature
TJ, JUNCTION TEMPERATURE (°C)
ID = 0.2 A
VGS = 4.5 V and 10 V
RDS(on), DRAINTOSOURCE
RESISTANCE (NORMALIZED)
4.5 V
10 V
NTJD5121N, NVJD5121N
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5
TYPICAL PERFORMANCE CURVES
(TJ = 25°C unless otherwise noted)
0
10
20
30
40
0 4 8 12 16 20
Figure 7. Capacitance Variation
DRAINTOSOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
TJ = 25°C
VGS = 0 V
Coss
Ciss
Crss
0
1
2
3
4
5
0 0.2 0.4 0.6 0.8 1
Figure 8. GatetoSource and
DraintoSource Voltage vs. Total Charge
Qg, TOTAL GATE CHARGE (nC)
VGS, GATETOSOURCE VOLTAGE (V)
ID = 0.2 A
TJ = 25°C
VDD = 25 V
0.01
0.1
1
0.4 0.6 0.8 1 1.2
Figure 9. Diode Forward Voltage vs. Current
VSD, SOURCETODRAIN VOLTAGE (V)
IS, SOURCE CURRENT (A)
VGS = 0 V
TJ = 25°C
TJ = 85°C
1.0
1.2
1.4
1.6
1.8
2.0
2.2
50 25 0 25 50 75 100 125 150
Figure 10. Threshold Voltage with Temperature
TJ, JUNCTION TEMPERATURE (°C)
ID = 250 mA
VGS, GATETOSOURCE VOLTAGE (V)
2.4
1.1
1.3
1.5
1.7
1.9
2.1
2.3
2.5
r(t), EFFECTIVE TRANSIENT THERMAL RESPONSE
PULSE TIME t,(s)
10
1000
SINGLE PULSE
100 10001010.10.010.000001
1
0.2
D = 0.5
0.01
0.02
0.1
0.05
Figure 11. Thermal Response
100
0.0010.00010.00001
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NTJD5121N, NVJD5121N
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6
Table 1. ORDERING INFORMATION
Part Number
Marking
(XX) Package Shipping
NTJD5121NT1G TF SC88
(PbFree)
3000 / Tape & Reel
NTJD5121NT2G TF SC88
(PbFree)
3000 / Tape & Reel
NVJD5121NT1G VTF SC88
(PbFree)
3000 / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
Eiiii+7777|$ DE m Mac 34.1%?” TOP VIEW n ms azu U25 onus anus mm: c nos m5 U22 om none was DETA‘LA n ‘BU 2m: 22a mm: 0075 was 7A Emmi an- L4 F” T gm RE SOLDER oxso-H- mm L’ ,,+,,T Mai, 0,65 *4 k F‘TCH SIDE VIEW ‘For addmena‘ Informahcn detafls‘ p‘ease download Mounlmg Techniques R munaucm and the am \he Hng m a 7mm
NTJD5121N, NVJD5121N
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7
PACKAGE DIMENSIONS
SC88/SC706/SOT363
CASE 419B02
ISSUE Y
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRU-
SIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END.
4. DIMENSIONS D AND E1 AT THE OUTERMOST EXTREMES OF
THE PLASTIC BODY AND DATUM H.
5. DATUMS A AND B ARE DETERMINED AT DATUM H.
6. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE
LEAD BETWEEN 0.08 AND 0.15 FROM THE TIP.
7. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION.
ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN
EXCESS OF DIMENSION b AT MAXIMUM MATERIAL CONDI-
TION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER
RADIUS OF THE FOOT.
Cddd M
123
A1
A
c
654
E
b
6X DIM MIN NOM MAX
MILLIMETERS
A−−− −−− 1.10
A1 0.00 −−− 0.10
ddd
b0.15 0.20 0.25
C0.08 0.15 0.22
D1.80 2.00 2.20
−−− −−− 0.043
0.000 −−− 0.004
0.006 0.008 0.010
0.003 0.006 0.009
0.070 0.078 0.086
MIN NOM MAX
INCHES
0.10 0.004
E1 1.15 1.25 1.35
e0.65 BSC
L0.26 0.36 0.46
2.00 2.10 2.20
0.045 0.049 0.053
0.026 BSC
0.010 0.014 0.018
0.078 0.082 0.086
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
0.65
0.66
6X
DIMENSIONS: MILLIMETERS
0.30
PITCH
2.50
6X
RECOMMENDED
TOP VIEW
SIDE VIEW END VIEW
bbb H
B
SEATING
PLANE
DETAIL A E
A2 0.70 0.90 1.00 0.027 0.035 0.039
L2 0.15 BSC 0.006 BSC
aaa 0.15 0.006
bbb 0.30 0.012
ccc 0.10 0.004
A-B D
aaa C
2X 3 TIPS
D
E1
D
e
A
2X
aaa H D
2X
D
L
PLANE
DETAIL A
H
GAGE
L2
C
ccc C
A2
6X
STYLE 26:
PIN 1. SOURCE 1
2. GATE 1
3. DRAIN 2
4. SOURCE 2
5. GATE 2
6. DRAIN 1
ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
at www.onsemi.com/site/pdf/PatentMarking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended,
or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which
the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or
unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable
copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
N. American Technical Support: 8002829855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81358171050
NTJD5121N/D
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 3036752175 or 8003443860 Toll Free USA/Canada
Fax: 3036752176 or 8003443867 Toll Free USA/Canada
Email: orderlit@onsemi.com
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Order Literature: http://www.onsemi.com/orderlit
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