NTLJD3119C Datasheet by ON Semiconductor

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© Semiconductor Components Industries, LLC, 2016
May, 2019 Rev. 5
1Publication Order Number:
NTLJD3119C/D
NTLJD3119C
MOSFET – Power,
Complementary, WDFN
2X2 mm
20 V/-20 V, 4.6 A/-4.1 A
Features
Complementary NChannel and PChannel MOSFET
WDFN Package with Exposed Drain Pad for Excellent Thermal
Conduction
Footprint Same as SC88 Package
Leading Edge Trench Technology for Low On Resistance
1.8 V Gate Threshold Voltage
Low Profile (< 0.8 mm) for Easy Fit in Thin Environments
This is a PbFree Device
Applications
Synchronous DCDC Conversion Circuits
Load/Power Management of Portable Devices like PDAs, Cellular
Phones and Hard Drives
Color Display and Camera Flash Regulators
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter Symbol Value Unit
DraintoSource Voltage NCh VDSS 20 V
PCh 20
GatetoSource Voltage NCh VGS ±8.0 V
PCh
NChannel
Continuous Drain
Current (Note 1)
Steady
State
TA = 25°CID3.8 A
TA = 85°C 2.8
t 5 s TA = 25°C 4.6
PChannel
Continuous Drain
Current (Note 1)
Steady
State
TA = 25°CID3.3 A
TA = 85°C2.4
t 5 s TA = 25°C4.1
Power Dissipation
(Note 1)
Steady
State TA = 25°C
PD1.5 W
t 5 s 2.3
NChannel
Continuous Drain
Current (Note 2)
Steady
State
TA = 25°CID2.6 A
TA = 85°C 1.9
PChannel
Continuous Drain
Current (Note 2)
Steady
State
TA = 25°CID2.3 A
TA = 85°C1.6
Power Dissipation
(Note 2)
Steady
State TA = 25°CPD0.71 W
Pulsed Drain Current NCh tp = 10 msIDM 18 A
PCh 20
Operating Junction and Storage Temperature TJ, TSTG 55 to
150
°C
Lead Temperature for Soldering Purposes
(1/8 from case for 10 s)
TL260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
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JM = Specific Device Code
M = Date Code
G= PbFree Package
(Note: Microdot may be in either location)
WDFN6
CASE 506AN
MARKING
DIAGRAM
Device Package Shipping
ORDERING INFORMATION
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
D2 D1
Pin 1
1
2
3
6
5
4
S1
G1
D2
D1
G2
S2
(Top View)
PIN CONNECTIONS
D1
D2
NTLJD3119CTAG WDFN6
(PbFree)
3000/Tape & Reel
NChannel
20 V
PChannel
20 V
85 mW @ 2.5 V
65 mW @ 4.5 V
100 mW @ 4.5 V
135 mW @ 2.5 V
RDS(on) MAX
2.0 A
2.0 A
ID MAXV(BR)DSS
120 mW @ 1.8 V
200 mW @ 1.8 V
NTLJD3119CTBG WDFN6
(PbFree)
3000/Tape & Reel
3.8 A
1.7 A
4.1 A
1.6 A
JM M
1
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2
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
2. Surface Mounted on FR4 Board using the minimum recommended pad size
of 30 mm2, 2 oz Cu.
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3
THERMAL RESISTANCE RATINGS
Parameter Symbol Max Unit
SINGLE OPERATION (SELFHEATED)
JunctiontoAmbient – Steady State (Note 3) RqJA 83
°C/W
JunctiontoAmbient – Steady State Min Pad (Note 4) RqJA 177
JunctiontoAmbient – t 5 s (Note 3) RqJA 54
DUAL OPERATION (EQUALLY HEATED)
JunctiontoAmbient – Steady State (Note 3) RqJA 58
°C/W
JunctiontoAmbient – Steady State Min Pad (Note 4) RqJA 133
JunctiontoAmbient – t 5 s (Note 3) RqJA 40
3. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).
4. Surface Mounted on FR4 Board using the minimum recommended pad size (30 mm2, 2 oz Cu).
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4
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter Symbol N/P Test Conditions Min Typ Max Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage V(BR)DSS N
VGS = 0 V
ID = 250 mA20 V
PID = 250 mA20
DraintoSource Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJN 10.4 mV/°C
P 9.95
Zero Gate Voltage Drain Current IDSS N VGS = 0 V, VDS = 16 V
TJ = 25 °C
1.0 mA
P VGS = 0 V, VDS = 16 V 1.0
N VGS = 0 V, VDS = 16 V
TJ = 85 °C
10
P VGS = 0 V, VDS = 16 V 10
GatetoSource Leakage Current IGSS N VDS = 0 V, VGS = ±8.0 V ±100 nA
P VDS = 0 V, VGS = ±8.0 V ±100
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage VGS(TH) N
VGS = VDS
ID = 250 mA0.4 0.7 1.0 V
PID = 250 mA0.4 0.7 1.0
Gate Threshold Temperature
Coefficient
VGS(TH)/TJN3.0 mV/°C
P 2.44
DraintoSource On Resistance RDS(on) N VGS = 4.5 V , ID = 3.8 A 37 65 mW
P VGS = 4.5 V , ID = 4.1 A 75 100
N VGS = 2.5 V , ID = 2.0 A 46 85
P VGS = 2.5 V, ID = 2.0 A 101 135
N VGS = 1.8 V , ID = 1.7 A 65 120
P VGS = 1.8 V, ID = 1.6 A 150 200
Forward Transconductance gFS N VDS = 10 V, ID = 1.7 A 4.2 S
P VDS = 5.0 V , ID = 2.0 A 3.1
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance CISS N
f = 1.0 MHz, VGS = 0 V
VDS = 10 V 271 pF
P VDS = 10 V 531
Output Capacitance COSS N VDS = 10 V 72
P VDS = 10 V 91
Reverse Transfer Capacitance CRSS N VDS = 10 V 43
P VDS = 10 V 56
Total Gate Charge QG(TOT) N VGS = 4.5 V, VDS = 10 V, ID = 3.8 A 3.7 nC
P VGS = 4.5 V, VDS = 10 V, ID = 2.0 A 5.5
Threshold Gate Charge QG(TH) N VGS = 4.5 V, VDS = 10 V, ID = 3.8 A 0.3
P VGS = 4.5 V, VDS = 10 V, ID = 2.0 A 0.7
GatetoSource Charge QGS N VGS = 4.5 V, VDS = 10 V, ID = 3.8 A 0.6
P VGS = 4.5 V, VDS = 10 V, ID = 2.0 A 1.0
GatetoDrain Charge QGD N VGS = 4.5 V, VDS = 10 V, ID = 3.8 A 1.0
P VGS = 4.5 V, VDS = 10 V, ID = 2.0 A 1.4
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5
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter UnitMaxTypMinTest ConditionsN/PSymbol
SWITCHING CHARACTERISTICS (Note 6)
TurnOn Delay Time td(ON)
NVGS = 4.5 V, VDD = 16 V,
ID = 1.0 A, RG = 2.0 W
3.8 ns
Rise Time tr4.7
TurnOff Delay Time td(OFF) 11.1
Fall Time tf5.8
TurnOn Delay Time td(ON)
PVGS = 4.5 V, VDD = 10 V,
ID = 2.0 A, RG = 2.0 W
5.2
Rise Time tr13.2
TurnOff Delay Time td(OFF) 13.7
Fall Time tf19.1
DRAINSOURCE DIODE CHARACTERISTICS
Forward Diode Voltage VSD N
VGS = 0 V, TJ = 25 °C
IS = 1.0 A 0.69 1.0 V
P IS = 1.0 A 0.75 1.0
N
VGS = 0 V, TJ = 125 °C
IS = 1.0 A 0.52
P IS = 1.0 A 0.64
Reverse Recovery Time tRR N
VGS = 0 V,
dIS / dt = 100 A/ms
IS = 1.0 A 10.2 ns
P IS = 1.0 A 16.2
Charge Time taN IS = 1.0 A 6.0
P IS = 1.0 A 10.6
Discharge Time tbN IS = 1.0 A 4.2
P IS = 1.0 A 5.6
Reverse Recovery Charge QRR N IS = 1.0 A 3.0 nC
P IS = 1.0 A 5.7
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
:4v«oz.2v
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6
TYPICAL PERFORMANCE CURVES NCHANNEL (TJ = 25°C unless otherwise noted)
212104
VGS = 0 V
TJ = 100°C
TJ = 150°C
20
100
1000
10000
6 8 14 16 18
1
0.14
32
0.1
0410
1.5
1.2
1.4
1.0
0.8
0.7
0 0.5 21
VDS, DRAINTOSOURCE VOLTAGE (V)
ID, DRAIN CURRENT (AMPS)
0
VGS, GATETOSOURCE VOLTAGE (V)
Figure 1. OnRegion Characteristics Figure 2. Transfer Characteristics
ID, DRAIN CURRENT (AMPS)
1.0
0.07
5.02.0
0.05
0.04
0.03 6.0
Figure 3. OnResistance versus Drain Current
VGS, GATETOSOURCE VOLTAGE (V)
Figure 4. OnResistance versus Drain Current
and Gate Voltage
ID, DRAIN CURRENT (A)
RDS(on), DRAINTOSOURCE RESISTANCE (W)
RDS(on), DRAINTOSOURCE RESISTANCE (W)
Figure 5. OnResistance Variation with
Temperature
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. DraintoSource Leakage Current
versus Voltage
VDS, DRAINTOSOURCE VOLTAGE (V)
RDS(on), DRAINTOSOURCE RESISTANCE
(NORMALIZED)
IDSS, LEAKAGE (nA)
10
50 5025025 75 125100
13
2
4
VDS 10 V
TJ = 25°C
TJ = 55°C
TJ = 100°C
VGS = 1.8 V
ID = 3.8 A
VGS = 4.5 V
6
0.1
2
0
10
1.5
TJ = 25°C
VGS = 4 V to 2.2 V
1.8 V
4
8
4
0.06
0.08
TJ = 25°C
ID = 3.8 A
150
2.5
2.0 V
1.4 V
1.6 V
1.2 V
TJ = 25°C
0.12
0.06
0.02
0.04
VGS = 4.5 V
VGS = 2.5 V
2
0.08
0.09
4.03.0 56789
1.3
1.1
0.9
1.5 2.5 3.5
6
8
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7
TYPICAL PERFORMANCE CURVES NCHANNEL (TJ = 25°C unless otherwise noted)
1 10 100
1
100
tr
td(off)
td(on)
tf
10
VDD = 16 V
ID = 1.0 A
VGS = 4.5 V
5 5 15 20
GATETOSOURCE OR DRAINTOSOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
Figure 7. Capacitance Variation
400
0
VGS VDS
300
100
010
VDS = 0 V TJ = 25°C
Coss
Crss
500
600
Ciss
Figure 8. GateToSource and DrainToSource
Voltage versus Total Charge
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
RG, GATE RESISTANCE (W)
t, TIME (ns)
2
0
0.4
VSD, SOURCETODRAIN VOLTAGE (V)
IS, SOURCE CURRENT (AMPS)
VGS = 0 V
Figure 10. Diode Forward Voltage versus Current
0.9
0.5
0.6
1
10
TJ = 25°C
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
0
3
0
QG, TOTAL GATE CHARGE (nC)
5
4
123
ID = 3.8 A
TJ = 25°C
VGS
QGS QGD
QT
2
1
4
0
20
12
8
4
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
VDS
16
200
VGS = 0 V
1.5
0.80.70.5
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8
TYPICAL PERFORMANCE CURVES PCHANNEL (TJ = 25°C unless otherwise noted)
12
0.15
5
1.4
1.6
1.2
0.8
0.6
10000
0 4.521
VDS, DRAINTOSOURCE VOLTAGE (V)
ID, DRAIN CURRENT (AMPS)
0
VGS, GATETOSOURCE VOLTAGE (V)
Figure 11. OnRegion Characteristics Figure 12. Transfer Characteristics
ID, DRAIN CURRENT (AMPS)
1.0 2.01.5
Figure 13. OnResistance versus Drain
Current
ID, DRAIN CURRENT (A)
Figure 14. OnResistance versus Drain
Current and Gate Voltage
ID, DRAIN CURRENT (A)
RDS(on), DRAINTOSOURCE RESISTANCE (W)
RDS(on), DRAINTOSOURCE RESISTANCE (W)
Figure 15. OnResistance Variation with
Temperature
TJ, JUNCTION TEMPERATURE (°C)
Figure 16. DraintoSource Leakage Current
versus Voltage
VDS, DRAINTOSOURCE VOLTAGE (V)
RDS(on), DRAINTOSOURCE RESISTANCE
(NORMALIZED)
IDSS, LEAKAGE (nA)
50 5025025 75 125100
1
212104
3
1
2
VDS 10 V
TJ = 25°C
TJ = 55°C
TJ = 125°C
VGS = 0 V
ID = 2.2 A
VGS = 4.5 V
3
TJ = 100°C
TJ = 150°C
2
0
1.5
TJ = 25°C
20
VGS = 1.9 V to 6 V
1.5 V
3
1000
4
4
0
4
TJ = 25°C
150 10
2.5
1.4 V
1.3 V
1.2 V
TJ = 25°C
VGS = 4.5 V
TJ = 55°C
TJ = 100°C
0
VGS = 4.5 V
VGS = 2.5 V
6 8 14 16 18
20.5
2.5 3
5
3.5
1.6 V
1.7 V
1
3
5
0.05
100
2.51.50.5
0.5
1.5
2.5
3.5
4.5
1.8 V
0.1
0.05
0.1
0.04
0.07
0.06
0.08
0.09
4
1.0
‘rC : 25= T J : 150) S‘NGLE PULSE — Rusmn» L‘M'T THERMAL LIM‘T
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9
TYPICAL PERFORMANCE CURVES PCHANNEL (TJ = 25°C unless otherwise noted)
5 5 15 20
GATETOSOURCE OR DRAINTOSOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
Figure 17. Capacitance Variation
800
0
VGS VDS
1000
400
010
VDS = 0 V TJ = 25°C
Coss
Crss
1200
Ciss
Figure 18. GateToSource and DrainToSource
Voltage versus Total Charge
Figure 19. Resistive Switching Time
Variation versus Gate Resistance
RG, GATE RESISTANCE (W)
1 10 100
1000
1
t, TIME (ns)
100
tr
td(off)
td(on)
tf
10
VDD = 15 V
ID = 2.2 A
VGS = 4.5 V 2.5
0
0
VSD, SOURCETODRAIN VOLTAGE (V)
VGS = 0 V
Figure 20. Diode Forward Voltage versus Current
1.0
1
0.6
2
Figure 21. Maximum Rated Forward Biased
Safe Operating Area
TJ = 25°C
-VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
0
3
0
QG, TOTAL GATE CHARGE (nC)
5
4
43
ID = 2.2 A
TJ = 25°C
VGS
QGS QGD
QT
2
1
5
8
0
20
12
4
-VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
VDS
16
3
0.80.40.2
Is, SOURCE CURRENT (AMPS)
600
200
1.5
0.5 TJ = 150°C
621
0.1 0.7 0.90.50.3
0.1 1 100
VDS, DRAINTOSOURCE VOLTAGE (V)
1
100
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
10
10
TC = 25°C
TJ = 150°C
SINGLE PULSE
1 ms
100 ms
10 ms
dc
10 ms
0.1
0.01
ID, DRAIN CURRENT (AMPS)
*See Note 2 on Page 1
VGS = 0 V
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10
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
Figure 22. Thermal Response
t, TIME (s)
1
1000
0.1
0.2
0.02
D = 0.5
0.05
0.01
SINGLE PULSE
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) TA = P(pk) RqJA(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
100 1000100.10.0010.00010.000001
0.1
100
10
10.010.00001
*See Note 2 on Page 1
EFFECTIVE TRANSIENT THERMAL RESISTANCE
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11
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED
TERMINAL AND IS MEASURED BETWEEN
0.15 AND 0.30 mm FROM THE TERMINAL TIP.
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
SEATING
PLANE
0.10 C
A3
A
A1
0.10 C
WDFN6 2x2, 0.65P
CASE 506AN
ISSUE G
DIM
A
MIN MAX
MILLIMETERS
0.70 0.80
A1 0.00 0.05
A3 0.20 REF
b0.25 0.35
D2.00 BSC
D2 0.57 0.77
0.90 1.10
E2.00 BSC
0.25 REF
E2
e0.65 BSC
K
0.20 0.30
L
0.95 BSCF
PIN ONE
REFERENCE
0.08 C
0.10 C
NOTE 4
A0.10 C
NOTE 3
L
e
D2
E2
b
B
3
6
6X
1
K4
0.05 C
D2
MOUNTING FOOTPRINT*
BOTTOM VIEW
SOLDERMASK DEFINED
DIMENSIONS: MILLIMETERS
L1
DETAIL A
L
OPTIONAL
CONSTRUCTIONS
L
DETAIL B
MOLD CMPDEXPOSED Cu
OPTIONAL
CONSTRUCTIONS
DETAIL A
DETAIL B
A
B
TOP VIEW
C
SIDE VIEW
PLATING
--- 0.10
L1
A0.10 CB
A0.10 CB
6X 0.45
2.30
1.10
0.82
2X
1.80
0.65
PITCH
6X 0.39
1
PACKAGE
OUTLINE
F
D
E
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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