BSS138N Datasheet by Infineon Technologies

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BSS138N
SIPMOS® Small-Signal-Transistor
Features
• N-channel
• Enhancement mode
• Logic level
• dv/dt rated
• Pb-free lead-plating; RoHS compliant
• Qualified according to AEC Q101
• Halogen free according to IEC61249-2-21
VDS 60 V
RDS(on),max 3.5 Ω
ID0.23 A
Product Summary
PG-SOT-23
Type Package Tape and Reel Marking
BSS138N PG-SOT-23 H6327: 3000 SKs
BSS138N PG-SOT-23 H6433: 10000 SKs
Rev. 2.86 page 1 2012-04-17
Parameter Symbol Conditions Unit
Continuous drain current IDTA=25 °C 0.23 A
TA=70 °C 0.18
Pulsed drain current ID,pulse TA=25 °C 0.92
Reverse diode dv/dtdv/dt
ID=0.23 A, VDS=48 V,
di/dt=200 A/µs,
Tj,max=150 °C
6 kV/µs
Gate source voltage VGS ±20 V
ESD sensitivity JESD22-A114 (HBM) Class 0 (<250V)
Power dissipation Ptot TA=25 °C 0.36 W
Operating and storage temperature Tj, Tstg -55 ... 150 °C
IEC climatic category; DIN IEC 68-1 55/150/56
Value
Rev. 2.86 page 1 2012-04-17
(ifineon ,
BSS138N
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance,
junction - minimal footprint RthJA - - 350 K/W
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS VGS= 0 V, ID=250 µA 60 - - V
Gate threshold voltage VGS(th) VGS=V DS, ID=26 µA 0.6 1.0 1.4
Drain-source leakage current ID (off)
VDS=60 V,
VGS=0 V, Tj=25 °C - - 0.1 µA
VDS=60 V,
VGS=0 V, Tj=150 °C --5
Values
Rev. 2.86 page 2 2012-04-17
Gate-source leakage current IGSS VGS=20 V, VDS=0 V - 1 10 nA
Drain-source on-state resistance RDS(on) VGS=4.5 V, ID=0.03 A - 3.3 4.0 Ω
VGS=4.5 V, ID=0.19 A - 3.5 6.0
VGS=10 V, ID=0.23 A - 2.2 3.5
Transconductance gfs
|VDS|>2|ID|RDS(on)max,
ID=0.18 A 0.1 0.2 - S
Rev. 2.86 page 2 2012-04-17
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BSS138N
Parameter Symbol Conditions Unit
min. typ. max.
D
y
namic characteristics
Input capacitance Ciss -3241pF
Output capacitance Coss - 7.2 9.5
Reverse transfer capacitance Crss - 2.8 3.8
Turn-on delay time td(on) - 2.3 3.5 ns
Rise time tr- 3.0 4.5
Turn-off delay time td(off) - 6.7 10
Fall time tf- 8.2 12.3
Gate Charge Characteristics
Gate to source charge Qgs - 0.10 0.14 nC
Gate to drain charge Qgd - 0.3 0.4
Gate charge total Qg- 1.0 1.4
Gate plateau voltage Vplateau - 3.3 - V
Values
VGS=0 V, VDS=25 V,
f=1 MHz
VDD=30 V, VGS=10 V,
ID=0.23 A, RG=6 Ω
VDD=48 V, ID=0.23 A,
VGS=0 to 10 V
Rev. 2.86 page 3 2012-04-17
Reverse Diode
Diode continous forward current IS- - 0.23 A
Diode pulse current IS,pulse - - 0.92
Diode forward voltage VSD
VGS=0 V, IF=0.23 A,
Tj=25 °C - 0.83 1.2 V
Reverse recovery time trr - 9.1 14.5 ns
Reverse recovery charge Qrr - 3.3 5 nC
VR=30 V, IF=0.23 A,
diF/dt=100 A/µs
TA=25 °C
Rev. 2.86 page 3 2012-04-17
(ifineon §
BSS138N
1 Power dissipation 2 Drain current
Ptot=f(TA)ID=f(TA); VGS10 V
0
0.1
0.2
0.3
0.4
0 40 80 120 160
Ptot [W]
TA[°C]
0
0.05
0.1
0.15
0.2
0.25
0 40 80 120 160
ID[A]
TA[°C]
Rev. 2.86 page 4 2012-04-17
3 Safe operating area 4 Max. transient thermal impedance
ID=f(VDS); TA=25 °C; D=0 ZthJA=f(tp)
parameter: tpparameter: D=tp/T
100 ms
10 µs
100 µs
1 ms
10 ms
DC
10-3
10-2
10-1
100
101
1 10 100
ID[A]
VDS [V]
limited by on-state
resistance
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
10-5 10-4 10-3 10-2 10-1 100101
100
101
102
103
ZthJA [K/W]
tp[s]
0
0.1
0.2
0.3
0.4
0 40 80 120 160
Ptot [W]
TA[°C]
0
0.05
0.1
0.15
0.2
0.25
0 40 80 120 160
ID[A]
TA[°C]
Rev. 2.86 page 4 2012-04-17
(ifineon ’I I / “K
BSS138N
5 Typ. output characteristics 6 Typ. drain-source on resistance
ID=f(VDS); Tj=25 °C RDS(on)=f(ID); Tj=25 °C
parameter: VGS parameter: VGS
2.9 V 3.2 V 3.5 V 4 V
4.5 V
5 V
7 V
10 V
0
2
4
6
8
10
0 0.1 0.2 0.3 0.4 0.5
RDS(on) [Ω]
ID[A]
2.9 V
3.2 V
3.5 V
4 V
4.5 V
5 V7 V
10 V
0
0.1
0.2
0.3
0.4
0.5
0.6
012345
ID[A]
VDS [V]
Rev. 2.86 page 5 2012-04-17
7 Typ. transfer characteristics 8 Typ. forward transconductance
ID=f(VGS); |VDS|>2|ID|RDS(on)max gfs=f(ID); Tj=25 °C
2.9 V 3.2 V 3.5 V 4 V
4.5 V
5 V
7 V
10 V
0
2
4
6
8
10
0 0.1 0.2 0.3 0.4 0.5
RDS(on) [Ω]
ID[A]
0
0.1
0.2
0.3
0.4
0.5
0.6
012345
ID[A]
VGS [V]
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.00 0.10 0.20 0.30 0.40
gfs [S]
ID[A]
2.9 V
3.2 V
3.5 V
4 V
4.5 V
5 V7 V
10 V
0
0.1
0.2
0.3
0.4
0.5
0.6
012345
ID[A]
VDS [V]
Rev. 2.86 page 5 2012-04-17
\\\
BSS138N
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
RDS(on)=f(Tj); ID=0.23 A; VGS=10 V VGS(th)=f(Tj); VDS=VGS; ID=26 µA
parameter: ID
typ
98 %
0
2
4
6
8
-60 -20 20 60 100 140
RDS(on) [Ω]
Tj[°C]
typ
98 %
2 %
0
0.4
0.8
1.2
1.6
2
-60 -20 20 60 100 140
VGS(th) [V]
Tj[°C]
Rev. 2.86 page 6 2012-04-17
11 Typ. capacitances 12 Forward characteristics of reverse diode
C=f(VDS); VGS=0 V; f=1 MHz; Tj=25°C IF=f(VSD)
parameter: Tj
typ
98 %
0
2
4
6
8
-60 -20 20 60 100 140
RDS(on) [Ω]
Tj[°C]
typ
98 %
2 %
0
0.4
0.8
1.2
1.6
2
-60 -20 20 60 100 140
VGS(th) [V]
Tj[°C]
Ciss
Coss
Crss
100
101
102
0 102030
C[pF]
VDS [V]
25 °C
150 °C
25 °C, 98%
150 °C, 98%
10-3
10-2
10-1
100
00.40.81.21.622.4
IF[A]
VSD [V]
Rev. 2.86 page 6 2012-04-17
(ifineon \\
BSS138N
13 Typ. gate charge 14 Drain-source breakdown voltage
VGS=f(Qgate); ID=0.23 A pulsed VBR(DSS)=f(Tj); ID=250 µA
parameter: VDD
50
55
60
65
70
-60 -20 20 60 100 140 180
VBR(DSS) [V]
Tj[°C]
12 V
30 V
48 V
0
2
4
6
8
10
12
0 0.2 0.4 0.6 0.8 1
VGS [V]
Qgate [nC]
Rev. 2.86 page 7 2012-04-17
50
55
60
65
70
-60 -20 20 60 100 140 180
VBR(DSS) [V]
Tj[°C]
12 V
30 V
48 V
0
2
4
6
8
10
12
0 0.2 0.4 0.6 0.8 1
VGS [V]
Qgate [nC]
Rev. 2.86 page 7 2012-04-17
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BSS138N
Packa
g
e Outline:
Footprint: Packaging:
Rev. 2.86 page 8 2012-04-17
Dimensions in mm
Rev. 2.86 page 8 2012-04-17
0/. Infineon, Due to technical requirements, components may contain dangerous substances.
BSS138N
Published by
Infineon Technologies AG
Bereich Kommunikation
St.-Martin-Straße 53
D-81541 München
©
Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as
warranted characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices, please contact your
nearest Infineon Technologies office in Germany or our Infineon Technologies representatives worldwide
(see address list).
Warnings
Due to technical requirements, components may contain dangerous substances.
Rev. 2.86 page 9 2012-04-17
yg
For information on the types in question, please contact your nearest Infineon Technologies office.
Infineon Technologies' components may only be used in life-support devices or systems with the
expressed written approval of Infineon Technologies if a failure of such components can reasonably
be expected to cause the failure of that life-support device or system, or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 2.86 page 9 2012-04-17

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