ESD110-B1 Series Datasheet by Infineon Technologies

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Power Management & Multimarket
Data Sheet
Revision 1.4, 2014-10-23
Final
ESD110-B1 Series
Bi-directional, 18.5 V (AC), 0.3 pF, 0201, 0402, RoHS and Halogen Free compliant
ESD110-B1-02ELS
ESD110-B1-02EL
Protection Device
TVS (Transient Voltage Suppressor)
Edition 2014-10-23
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2014 Infineon Technologies AG
All Rights Reserved.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com)
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
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ESD110-B1 Series
Product Overview
Final Data Sheet 3 Revision 1.4, 2014-10-23
1 Product Overview
1.1 Features
ESD / transient protection according to:
IEC61000-4-2 (ESD): ±15 kV (air), ±12 kV (contact)
IEC61000-4-5 (Surge): ±2 A (tp = 8 / 20 µs)
Bi-directional, working voltage up to VRWM = ±18.5 V (AC)
Ultra-low capacitance: CL = 0.3 pF (typical)
Low clamping voltage: VCL = 28 V (typical) at ITLP = 16 A
Very low reverse current: IR < 1 nA (typical)
Pb-free (RoHS compliant) and halogen free package
1.2 Application Examples
ESD Protection of RF signal lines in Near Field Communication (NFC) applications
1.3 Product Description
Figure 1-1 Pin Configuration and Schematic Diagram
Table 1-1 Part Information
Type Package Configuration Marking code
ESD110-B1-02ELS TSSLP-2-4 1 line, bi-directional X
ESD110-B1-02EL TSLP-2-20 1 line, bi-directional XX
PinConf_and_SchematicDiag.vsd
Pin 1
Pin 2
Pin 1 Pin 2
Pin 1 marking
(lasered)
@neon Dynamwc vesws‘ance Revevse wuvkmg vohage max
ESD110-B1 Series
Maximum Ratings
Final Data Sheet 4 Revision 1.4, 2014-10-23
2 Maximum Ratings
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible damage to the integrated circuit.
3 Electrical Characteristics at TA = 25 °C, unless otherwise specified
Figure 3-1 Definitions of electrical characteristics
Table 2-1 Maximum Ratings at TA = 25 °C, unless otherwise specified1)
1) Device is electrically symmetrical
Parameter Symbol Values Unit
ESD air discharge2)
ESD contact discharge2)
2) VESD according to IEC61000-4-2
VESD ±15
±12
kV
Peak pulse power3) PPK 58 W
Peak pulse current3)
3) Non-repetitive current pulse 8/20µs exponential decay waveform according to IEC61000-4-5
IPP ±2 A
Operating temperature TOP -40 to 125 °C
Storage temperature Tstg -55 to 150 °C
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@neon
ESD110-B1 Series
Electrical Characteristics at TA = 25 °C, unless otherwise specified
Final Data Sheet 5 Revision 1.4, 2014-10-23
Table 3-1 DC Characteristics at TA = 25 °C, unless otherwise specified1)
1) Device is electrically symmetrical
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Reverse working voltage VRWM -18.5 18.5 V for AC voltages (NFC)
-15 15 for DC voltages
Trigger voltage Vt1 20––V
Holding voltage Vh20 21 26 V TA = 25 °C, IT = 0.5 mA
–19TA = 125 °C, IT = 0.5 mA
Reverse leakage current IR–<130nAT
A = 25 °C, VR = 18.5 V
–10– T
A = 125 °C, VR = 18.5 V
Table 3-2 AC Characteristics at TA = 25 °C, unless otherwise specified
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Line capacitance CL0.15 0.3 0.5 pF VR = 0 V, f = 1 MHz
0.15 0.3 0.5 VR = 0 V, f = 1 GHz
Serie inductance LS 0.2 nH ESD110-B1-02ELS
0.4 – ESD110-B1-02EL
Table 3-3 ESD and Surge Characteristics at TA = 25 °C, unless otherwise specified1)
1) Device is electrically symmetrical
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Clamping voltage2)
2) Please refer to Application Note AN210[1]. TLP parameter: Z0 = 50 Ω , tp = 100ns, tr = 300ps
VCL – 3035VITLP = 16 A, tp = 100 ns
–3944 ITLP = 30 A, tp = 100 ns
Clamping voltage3)
3) Non-repetitive current pulse 8/20µs exponential decay waveform according to IEC61000-4-5
VCL –1924 IPP = 1 A, tp = 8/20 μs
–2429 IPP = 2 A, tp = 8/20 μs
Dynamic resistance2) RDYN –0.6Ωtp = 100 ns
@neon
ESD110-B1 Series
Typical Characteristics Diagrams
Final Data Sheet 6 Revision 1.4, 2014-10-23
4 Typical Characteristics Diagrams
Typical characteristics diagrams at TA=25°C, unless otherwise specified
Figure 4-1 Reverse leakage current: IR = f(VR)
Figure 4-2 Line capacitance: CL = f(VR)
10-12
10-11
10-10
10-9
10-8
10-7
10-6
10-5
10-4
10-3
0 5 10 15 20
IR [A]
VR [V]
0
0.1
0.2
0.3
0.4
0.5
0.6
0 2 4 6 8 10 12 14 16 18 20
CL [pF]
VR [V]
1 MHz
1 GHz
@neon
ESD110-B1 Series
Typical Characteristics Diagrams
Final Data Sheet 7 Revision 1.4, 2014-10-23
Figure 4-3 Clamping voltage (ESD): VCL = f(t), 8 kV positiv pulse from pin 1 to pin 2
Figure 4-4 Clamping voltage (ESD): VCL = f(t), 8 kV negativ pulse from pin 1 to pin 2
-20
0
20
40
60
80
100
120
140
160
-50 0 50 100 150 200 250 300 350 400 450
VCL [V]
tp [ns]
Scope: 6 GHz, 20 GS/s
VCL-max-peak = 142 V
VCL-30ns-peak = 26 V
-160
-140
-120
-100
-80
-60
-40
-20
0
20
-50 0 50 100 150 200 250 300 350 400 450
VCL [V]
tp [ns]
Scope: 6 GHz, 20 GS/s
VCL-max-peak = -144 V
VCL-30ns-peak = -25 V
@neon
ESD110-B1 Series
Typical Characteristics Diagrams
Final Data Sheet 8 Revision 1.4, 2014-10-23
Figure 4-5 Clamping voltage (ESD): VCL = f(t), 15 kV positiv pulse from pin 1 to pin 2
Figure 4-6 Clamping voltage (ESD): VCL = f(t), 15 kV negativ pulse from pin 1 to pin 2
-25
0
25
50
75
100
125
150
175
200
-50 0 50 100 150 200 250 300 350 400 450
VCL [V]
tp [ns]
Scope: 6 GHz, 20 GS/s
VCL-max-peak = 187 V
VCL-30ns-peak = 33 V
-200
-175
-150
-125
-100
-75
-50
-25
0
25
-50 0 50 100 150 200 250 300 350 400 450
VCL [V]
tp [ns]
Scope: 6 GHz, 20 GS/s
VCL-max-peak = -181 V
VCL-30ns-peak = -31 V
@neon
ESD110-B1 Series
Typical Characteristics Diagrams
Final Data Sheet 9 Revision 1.4, 2014-10-23
Figure 4-7 Clamping voltage (TLP): ITLP = f(VTLP) [1], pin 1 to pin 2
-30
-25
-20
-15
-10
-5
0
5
10
15
20
25
30
-40 -35 -30 -25 -20 -15 -10 -5 0 5 10 15 20 25 30 35 40
-15
-12.5
-10
-7.5
-5
-2.5
0
2.5
5
7.5
10
12.5
15
ITLP [A]
Equivalent VIEC [kV]
VTLP [V]
ESD110-B1 Series
RDYN
RDYN = 0.6 Ω
RDYN = 0.6 Ω
@neon
ESD110-B1 Series
Typical Characteristics Diagrams
Final Data Sheet 10 Revision 1.4, 2014-10-23
Figure 4-8 Clamping voltage(Surge): IPP = f(VCL)
-2.5
-2
-1.5
-1
-0.5
0
0.5
1
1.5
2
2.5
-30 -25 -20 -15 -10 -5 0 5 10 15 20 25 30
IPP [A]
VCL [V]
@neon
ESD110-B1 Series
Typical Characteristics Diagrams
Final Data Sheet 11 Revision 1.4, 2014-10-23
Figure 4-9 Insertion loss vs. frequency in a 50 system
-16
-14
-12
-10
-8
-6
-4
-2
0
10 100 1000 10000
Insertion Loss [dB]
f [MHz]
ESD110-B1-02EL
ESD110-B1-02ELS
ESD110-B1 Series
Application Information
Final Data Sheet 12 Revision 1.4, 2014-10-23
5 Application Information
Figure 5-1 Bi-directional ESD / Transient protection for NFC Frontend [3]
ESD18V_application example .vsd
Lo opan te nna
~1µH
GND
loop+
loop-
Mobile phone differential antenna
loop
GND
Mobile phone single ended antenna
TX-
RX
-
TX+
GND
NFC Module
TX/RX section
Caps should be high
voltage type to be save
regards the residual
ESD peak
RF=13.56MHz
signal vs . GND<+-18Vp
+Vsignal vs . -Vsignal <36V!!!
E MI LP f ilt e r
Antenna
m at ching
Interconnection
top/bottom shell
external pads
Main PCB / Top shell Bottom shell
Caps should be high
voltage type to be save
regards the residual
ESD peak
RF=13.56MHz
signal vs . GND<+-18Vp
Interconnection
top /bottom shell
external pads
TX-
RX
-
TX+
GND
NFC Module
TX/RX section
E MI LP f ilt e r
Antenna
m at ching
Main PCB / Top shell Bottom shell
infineon vs.
ESD110-B1 Series
Package Information
Final Data Sheet 13 Revision 1.4, 2014-10-23
6 Package Information
6.1 TSSLP-2-4
Figure 6-1 TSSLP-2-4: Package outline
Figure 6-2 TSSLP-2-4: Footprint
Figure 6-3 TSSLP-2-4: Packing
Figure 6-4 TSSLP-2-4: Marking (example) Table 1-1 “Part Information” on Page 3
TSSLP-2-3, -4-PO V01
±0.05
0.32
1
2
±0.035
0.2
1)
0.62
±0.05
+0.01
0.31-0.02
1) Dimension applies to plated terminals
Pin 1
marking
1)
±0.035
0.26
0.05 MAX.
Bottom viewTop view
0.355
0.27
0.19
0.19
0.19
Copper Solder mask Stencil apertures
0.57
0.24
0.62
0.32
0.24
0.14
TSSLP-2-3, -4-FP V02
Ex
4
Ey
0.35
Pin 1
marking
8
TSSLP-2-3, -4-MK V01
Pin 1 marking
1
Type code
infineon ‘ 0.93
ESD110-B1 Series
Package Information
Final Data Sheet 14 Revision 1.4, 2014-10-23
6.2 TSLP-2-20
Figure 6-5 TSLP-2-20: Package overview
Figure 6-6 TSLP-2-20: Footprint
Figure 6-7 TSLP-2-20: Packing
Figure 6-8 TSLP-2-20: Marking example Table 1-1 “Part Information” on Page 3
TSLP-2-19, -20-PO V01
±0.05
0.6
1
2
±0.05
0.65
±0.035
0.25 1)
1±0.05
0.05 MAX.
+0.01
0.31-0.02
1) Dimension applies to plated terminals
Pin 1
marking
1)
±0.035
0.5
Bottom viewTop view
TSLP-2-19, -20-FP V01
0.45
0.28
0.28
0.38
0.93
Copper Solder mask Stencil aperture
s
0.35
1
0.6
0.35
0.3
0.76
4
1.16
0.4
Pin 1
marking
8
TSLP-2-19, -20-TP V02
Type code
Pin 1 marking
TSLP-2-19, -20-MK V01
12
infineon
ESD110-B1 Series
References
Final Data Sheet 15 Revision 1.4, 2014-10-23
References
[1] Infineon AG - Application Note AN210: Effective ESD Protection design at System Level Using VF-TLP
Characterization Methodology
[2] Infineon AG - Recommendations for PCB Assembly of Infineon TSLP and TSSLP Packages
[3] Infineon AG - Application Note AN244: Tailored ESD Protection for the NFC Frontend
@neon
ESD110-B1 Series
Final Data Sheet 16 Revision 1.4, 2014-10-23
Trademarks of Infineon Technologies AG
AURIX™, BlueMoon™, COMNEON™, C166™, CROSSAVE™, CanPAK™, CIPOS™, CoolMOS™, CoolSET™,
CORECONTROL™, DAVE™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™,
EiceDRIVER™, EUPEC™, FCOS™, HITFET™, HybridPACK™, ISOFACE™, I²RF™, IsoPACK™, MIPAQ™,
ModSTACK™, my-d™, NovalithIC™, OmniTune™, OptiMOS™, ORIGA™, PROFET™, PRO-SIL™,
PRIMARION™, PrimePACK™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SMARTi™,
SmartLEWIS™, TEMPFET™, thinQ!™, TriCore™, TRENCHSTOP™, X-GOLD™, XMM™, X-PMU™,
XPOSYS™.
Other Trademarks
Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, PRIMECELL™,
REALVIEW™, THUMB™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership.
Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation
Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation.
FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of
Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of
INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of
Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. Mifare™ of NXP.
MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA
MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of
OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF
Micro Devices, Inc. SIRIUS™ of Sirius Sattelite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™
of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co.
TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™
of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas
Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes
Zetex Limited.
Last Trademarks Update 2010-06-09
Revision History: Rev. 1.3, 2014-04-08
Page or Item Subjects (major changes since previous revision)
Revision 1.4, 2014-10-23
4 Table 2-1) updated
Published by Infineon Technologies AG
www.infineon.com

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