NTR5198NL Datasheet by ON Semiconductor

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© Semiconductor Components Industries, LLC, 2013
June, 2019 Rev. 2
1Publication Order Number:
NTR5198NL/D
NTR5198NL
MOSFET – Power, Single,
N-Channel, Logic Level,
SOT-23
60 V, 155 mW
Features
Small Footprint Industry Standard Surface Mount SOT23 Package
Low RDS(on) for Low Conduction Losses and Improved Efficiency
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter Symbol Value Unit
DraintoSource Voltage VDSS 60 V
GatetoSource Voltage VGS ±20 V
Continuous Drain
Current RYJmb
(Notes 1, 2, 3, and 4)
Steady
State
TA = 25°CID2.2 A
TA = 100°C 1.6
Power Dissipation
RYJmb
(Notes 1 and 3)
TA = 25°CPD1.5 W
TA = 100°C 0.6
Continuous Drain
Current RqJA
(Note 1, 2, 3, and 4)
Steady
State
TA = 25°CID1.7 A
TA = 100°C 1.2
Power Dissipation RqJA
(Notes 1 and 3)
TA = 25°CPD0.9 W
TA = 100°C 0.4
Pulsed Drain Current TA = 25°C,
tp =10 ms
IDM 27 A
Operating Junction and Storage Temperature TJ,
Tstg
55 to
150
°C
Source Current (Body Diode) IS1.9 A
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
TL260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. The entire application environment impacts the thermal resistance values
shown, they are not constants and are only valid for the particular conditions
noted.
2. Psi (Y) is used as required per JESD5112 for packages in which
substantially less than 100% of the heat flows to single case surface.
3. Surfacemounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
4. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
G
D
S
Device Package Shipping
ORDERING INFORMATION
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60 V
205 mW @ 4.5 V
155 mW @ 10 V
RDS(on) TYP
2.2 A
ID MAXV(BR)DSS
SOT23
CASE 318
STYLE 21
MARKING DIAGRAM/
PIN ASSIGNMENT
2
1
3
NChannel
NTR5198NLT1G SOT23
(PbFree)
3000 /
Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
AA6 = Device Code
M = Date Code*
G= PbFree Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
3
Drain
1
Gate
2
Source
AA6 M G
G
NTR5198NLT3G SOT23
(PbFree)
10000 /
Tape & Reel
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2
THERMAL RESISTANCE RATINGS
Parameter Symbol Max Unit
JunctiontoLead #3 Drain (Notes 2 and 3) RYJmb 86 °C/W
JunctiontoAmbient Steady State (Note 3) RqJA 139 °C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA60 V
DraintoSource Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJReference to 25°C, ID = 250 mA70 mV/°C
Zero Gate Voltage Drain Current IDSS VGS = 0 V,
VDS = 60 V
TJ = 25°C 1.0 mA
TJ = 125°C 10
GatetoSource Leakage Current IGSS VDS = 0 V, VGS = "20 V "100 nA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA1.5 2.5 V
Threshold Temperature Coefficient VGS(TH)/TJReference to 25°C, ID = 250 mA6.5 mV/°C
DraintoSource OnResistance RDS(on) VGS = 10 V, ID = 1 A 107 155 mW
VGS = 4.5 V, ID = 1 A 142 205
Forward Transconductance gFS VDS = 5.0 V, ID = 1 A 3 S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance Ciss
VGS = 0 V, f = 1.0 MHz,
VDS = 25 V
182 pF
Output Capacitance Coss 25
Reverse Transfer Capacitance Crss 16
Total Gate Charge QG(TOT) VDS = 48 V,
ID = 1 A
VGS = 4.5 V 2.8 nC
VGS = 10 V 5.1
Threshold Gate Charge QG(TH)
VDS = 48 V, ID = 1 A
VGS = 10 V
0.3
GatetoSource Charge QGS 0.8
GatetoDrain Charge QGD 1.5
Plateau Voltage VGP 3.1 V
Gate Resistance RG8W
SWITCHING CHARACTERISTICS (Note 6)
TurnOn Delay Time td(on)
VDS = 30 V, VGS = 10 V,
ID = 1 A, RG = 10 W
5ns
Rise Time tr7
TurnOff Delay Time td(off) 13
Fall Time tf2
DRAINSOURCE DIODE CHARACTERISTICS
Forward Diode Voltage VSD VGS = 0 V,
IS = 1 A
TJ = 25°C 0.8 1.2 V
TJ = 125°C 0.6
Reverse Recovery Time trr
IS = 1 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms
12 ns
Charge Time ta9
Discharge Time tb3
Reverse Recovery Stored Charge QRR 6 nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
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3
TYPICAL CHARACTERISTICS
Figure 1. OnRegion Characteristics Figure 2. Transfer Characteristics
VDS, DRAINTOSOURCE VOLTAGE (V) VGS, GATETOSOURCE VOLTAGE (V)
543210
0
1
2
3
4
431
0
2
4
6
15
Figure 3. OnResistance vs. GatetoSource
Voltage
Figure 4. OnResistance vs. Drain Current and
Gate Voltage
VGS, GATE VOLTAGE (V) ID, DRAIN CURRENT (A)
10987653
0.05
0.10
0.15
0.30
0.35
0.45
0.50
210
0.05
0.10
0.25
0.35
0.40
0.50
Figure 5. OnResistance Variation with
Temperature
Figure 6. Breakdown Voltage Variation with
Temperature
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)
150125100502502550
0.6
1.0
1.5
2.0
1005002550
0.900
1.000
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
RDS(on), DRAINTOSOURCE RESISTANCE (W)
RDS(on), DRAINTOSOURCE RESISTANCE (W)
RDS(on), DRAINTOSOURCE RESISTANCE (Normalized)
BVDSS, NORMALIZED BREAKDOWN VOLTAGE
0.20
0.40
75
ID = 250 mA
VGS = 4.5 V
TJ = 25°C
VDS = 5 V
TJ = 150°C
TJ = 55°C
ID = 1 A
TJ = 25°C
TJ = 25°C
VGS = 10 V
VGS = 4.5 V
ID = 1 A
VGS = 10 V
VGS = 6.0 V
VGS = 3.4 V
VGS = 3.2 V
VGS = 3.8 V
4
0.25
3
0.15
0.20
0.30
0.45
5
6
7
8
9
10
11
12
13
14
15
VGS = 5.0 V
VGS = 10 V
VGS = 3.6 V
VGS = 3.0 V VGS = 4.0 V
25
1
3
5
7
8
10
12
9
11
13
14
5468791110 12 1413 15
0.7
0.8
0.9
1.1
1.2
1.3
1.4
1.6
1.7
1.8
1.9
25 75 125 150
0.925
0.950
0.975
1.025
1.050
1.075
1.100
1.125
1.150
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4
TYPICAL CHARACTERISTICS
QT
Figure 7. Threshold Voltage Variation with
Temperature
Figure 8. DraintoSource Leakage Current
vs. Voltage
TJ, JUNCTION TEMPERATURE (°C) VDS, DRAINTOSOURCE VOLTAGE (V)
150100252550
0.60
0.80
1.00
1.20
603550
1
10
100
1000
10,000
Figure 9. Capacitance Variation Figure 10. GatetoSource and
DraintoSource Voltage vs. Total Charge
VDS, DRAINTOSOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC)
60100
0
25
275
5.51.00.50
0
1
3
5
7
9
12
VGS(th), NORMALIZED THRESHOLD VOLTAGE
IDSS, LEAKAGE (nA)
C, CAPACITANCE (pF)
VGS, GATETOSOURCE VOLTAGE (V)
TJ = 25°C
f = 1 MHz
VGS = 0 V
CISS
2
4
6
8
10
ID = 250 mA
0 50 75 125
0.70
0.90
1.10
0.65
0.85
1.05
0.75
0.95
1.15
Figure 11. Resistive Switching Time Variation
vs. Gate Resistance
Figure 12. Diode Forward Voltage vs. Current
RG, GATE RESISTANCE (W)VSD, SOURCETODRAIN VOLTAGE (V)
100101
0.1
10
100
1.11.00.50.4
0.1
10
t, TIME (ns)
IS, SOURCE CURRENT (A)
VDD = 30 V
ID = 1 A
VGS = 10 V
tr
tf
td(off)
td(on) 1
10 15 20 25 30 40 5045 55
TJ = 85°C
TJ = 125°C
TJ = 150°C
52015 3025 4035 45 5550
50
75
100
125
150
175
200
225
250
COSS
CRSS
11
1.5 2.52.0 3.0 3.5 4.0 4.5 5.0
VDS = 48 V
ID = 1 A
TJ = 25°C
0
5
15
25
35
45
60
10
20
30
40
50
55
VDS, DRAINTOSOURCE VOLTAGE (V)
VGS
VDS
QGS QGD
1
TJ = 25°C
TJ = 125°C
TJ = 150°C
TJ = 85°C
TJ = 55°C
TJ = 100°C
0.6 0.7 0.8 0.9
V55 s Smg‘e Pulse Tc : 2590 Thermal len — - — Package Lxmxl
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5
TYPICAL CHARACTERISTICS
t, TIME (sec)
10.1 100.01 1000.00001 10000.000001
1
100
1000
R(t), EFFECTIVE TRANSIENT THERMAL RESPONSE (°C/W)
0.0010.0001
Single Pulse
50% Duty Cycle
20%
10%
5%
2%
1%
10
Figure 13. Maximum Rated Forward Biased
Safe Operating Area
VDS, DRAINTOSOURCE VOLTAGE (V)
1001010.1
0.01
0.1
1
10
100
ID, DRAIN CURRENT (A)
VGS 10 V
Single Pulse
TC = 25°C10 mS
100 mS
1 mS
10 mS
dc
RDS(on) Limit
Thermal Limit
Package Limit
Figure 14. Thermal Impedance (JunctiontoAmbient)
RqJA Steady State = 139°C/W
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6
PACKAGE DIMENSIONS
SOT23 (TO236)
CASE 31808
ISSUE AR
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
SOLDERING FOOTPRINT*
VIEW C
L
0.25
L1
e
EE
b
A
SEE VIEW C
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.000
b0.37 0.44 0.50 0.015
c0.08 0.14 0.20 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.30 0.43 0.55 0.012
0.039 0.044
0.002 0.004
0.017 0.020
0.006 0.008
0.114 0.120
0.051 0.055
0.075 0.080
0.017 0.022
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
HE
0.35 0.54 0.69 0.014 0.021 0.027
c
0−−− 10 0 −−− 10
T____
T
3X
TOP VIEW
SIDE VIEW
END VIEW
2.90
0.80
DIMENSIONS: MILLIMETERS
0.90
PITCH
3X
3X 0.95
RECOMMENDED
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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