ZVP1320F Datasheet by Diodes Incorporated

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Product Line 01 Diodes Incorporated ZHEX Lemma Gmun TU LKJ MT ZVP1320F 1 cl 3 Document number DSSSSBI Rev 4 , 2 WWW.diOdeS.COm
ZVP1320F
Document number: DS33391 Rev. 4 - 2
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200V P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET IN SOT23
Features and Benefits
V
(BR)DSS > -200V
R
DS(on) 80Ω @ VGS = -10V
Maximum continuous drain current ID = -35mA
“Lead Free”, RoHS Compliant (Note 1)
Halogen and Antimony Free. "Green" Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
Weight: 0.001 grams (approximate)
Ordering Information (Note 3)
Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel
ZVP1320FTA MT 7 8 3000
Notes: 1. No purposefully added lead
2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
SOT23
Device symbol Pin-Out
Top View
Top View
MT = Product Type Marking Code
D
S
G
m5 P'°“"°‘”"”‘ ,D Diodes Incorporated ZVP1320F 2 cl 3 Document number DSSSSBI Rev 4 , 2 WWW.di0dES.CDm
ZVP1320F
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Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Drain-Source Voltage VDSS -200 V
Gate-Source Voltage VGSS ±20 V
Continuous Drain Current ID -35 mA
Pulsed Drain Current (Note 5) IDM -400 mA
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Power Dissipation (Note 4) PD 350 mW
Thermal Resistance, Junction to Ambient (Note 4) RθJA 357 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Notes: 4. For a device mounted on 25mm X 25mm X 1.6mm FR-4 PCV with high coverage of single sided 1oz copper, in still air condition.
5. Device mounted on minimum recommended pad layout test board, 10μs pulse duty cycle = 1%.
Producl Line 01 Diodes Incorporaied rm=2suc 15X25mm FRI 1 ox copper D=0 5 Single Pulse D=0.05 D=0 I 1m Thermal Resistan 1000;: 10m 100m 1 1o Pulse Width (5) Transient Thermal Impedance 100 1k ,. (140 E o 35 \ E 030 ... ‘3 025 .2 020 o g 015 3 0 mo “- 005 X gout) 25X25mm FRI 15: Dapper \ \ \\ \ 120 140 160 o 20 40 so so 100 Temperature (°C) Derating Curve _» o 0 Maximum Power (W) ... o 100p Smgle Pulse Tm=25"c 25X25mm FRI! 10: r. r 1m 10m 100m 1 10 Pulse Width (5) Pulse Power Dissipation 100 1k January 2012 $7 Blades lncurporalefl
ZVP1320F
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Thermal Characteristics
m5 P'°“"°‘”"”‘ ,D Diodes Incorporated ZVP1320F 40H! Januavy 2012 Document number DSC33391 Hey 4 , 2 www.diodes.cnm ©Dmdes hvcmpumled
ZVP1320F
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Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage BVDSS -200 - - V
VGS = 0V, ID = -1mA
Zero Gate Voltage Drain Current TJ = 25°C IDSS - -
-1
-20 µA VDS = -200V, VGS = 0V
VDS = -160V, VGS = 0V, TA = 125°C
Gate-Source Leakage IGSS - - ±20 nA
VGS = ±20V, VDS = 0V
On-State Drain Current ID
(
on
)
-100 - - mA
VGS = -10V, VDS = -15V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage VGS
(
th
)
-1.5 - -3.5 V
VDS = VGS, ID = -1mA
Static Drain-Source On-Resistance RDS
(
on
)
- - 80
Ω VGS = -10V, ID = -50mA
Forward Transconductance gfs 25 - - mS
VDS = -15V, ID = -50mA
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance Ciss - - 50
pF VDS = -25V, VGS = 0V,
f = 1.0MHz
Output Capacitance Coss - - 15
pF
Reverse Transfer Capacitance Crss - - 5
pF
Turn-On Delay Time tD
(
on
)
- - 8
ns
VDS = -25V, ID = -50mA
Turn-On Rise Time t
r
- - 8
ns
Turn-Off Delay Time tD
(
off
)
- - 8
ns
Turn-Off Fall Time tf - - 16
ns
Notes: 6. Short duration pulse test used to minimize self-heating effect.
Product Line 01 Diodes Incorporated ZETEX Vus Drain Source Voltage (Volts) C7Capamlance (pF) V53: 720V 7IUV m z; 7w E - 77v : e 8 45V 5 e C, 75V is 74V 0 74 7a 712 716 720 724 728 732 736 760 Vos- Drain Source Voltage lVolts) Output Characteristics 40 7E 75 In ,4 760mA -40mA -2 -20mA U 0 72 74 76 78 710 VcsGate Source Voltage (Volts) Voltage Saturation Characteristics 50 an 30 Cl» 20 10 can 0 Cr» D 20 40 760 750 400 VDs—Drain Source Voltaae (Volts) Capacitance v drain-source voltage gfs-Forward Transconductancems) ersu V55; 71w 720V A -1DV E 712:: W E 7qu '7“ 2 rev 5 -so c 750 -5v E D Van LI: '2” -4v 0 o -2 74 76 -s -10 VDS - Drain Source Voltage (Volts) Saturation Characteristics ,140 A 425 <1: i="" e="" "="" e="" 7100="" v05.="" “’="" 710v="" :—="" 750="" o="" e="" 760="" e="" d="" 740="" o="" "="" 720="" ,="" ,="" ,="" i)="" 0="" 72="" 74="" 75="" 7b="" 710="" v65="" gate="" source="" voltage="" (volts)="" transfer="" characteristics="" o="" 720="" 749="" 760="" an="" 7100="" .120="" ld-drain="" current="" {maj="" transconductance="" v="" drain="" current="" january="" 2012="" ©dmdes="" lncurpmalefl="">
ZVP1320F
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Electrical Characteristics
. . ( . Diodeslncorporated zmx so 50 VDS: »50V 400V -200V 4|) 30 20 1D 0 VGS-Gate Source Voltage (Volts) o 72 74 75 Va 40 VGs-Gate Source Voltage (Volts) Transconductance v gate-source voltage glsAFarward Transconduclance (ms) 0 1 0 2 0 3 0 4 0 5 D E D Q-Charge (nC) Gate charge v gate-source voltage 2.4 o o o 2.2 2.0 1.8 16 14 1.2 1 O 0.3 0.6 D A ,1 40 40° 4000 740 -20 D 20 AD 60 BO 100 120140 150180 Iquain Current lmA) _ T-Temnerature (“Cl On-reSIstance v drain current Normalised Rnsmm and VG$(th) vs Temperature Normalised RDSlon) and VGSuhl 10 RDSlon) ADrain Source Resistance (£2) 8 ZVP132OF 9 ol 3 Document number DSSSSSI Rev. A - 2 WWW.dI0dBS.COm
ZVP1320F
Document number: DS33391 Rev. 4 - 2
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Electrical Characteristics (cont.)
m5 P'°“”°‘”""‘ ,D Diodes Incorporated ZHEX —> ._
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Package Outline Dimensions
Suggested Pad Layout
SOT23
Dim Min Max Typ
A 0.37 0.51 0.40
B 1.20 1.40 1.30
C 2.30 2.50 2.40
D 0.89 1.03 0.915
F 0.45 0.60 0.535
G 1.78 2.05 1.83
H 2.80 3.00 2.90
J 0.013 0.10 0.05
K 0.903 1.10 1.00
K1 - - 0.400
L 0.45 0.61 0.55
M 0.085 0.18 0.11
α 0° 8° -
All Dimensions in mm
Dimensions Value (in mm)
Z 2.9
X 0.8
Y 0.9
C 2.0
E 1.35
A
M
JL
D
F
BC
H
K
G
K1
XE
Y
C
Z
m5 P'°““°‘”"”‘ ,D Diodes Incorporated ZHEX January 2012 © Dmdes hvcuvpmaled
ZVP1320F
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IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2012, Diodes Incorporated
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