ZHCS400 Datasheet by Diodes Incorporated

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m5” ZHCS400 1 cl 6 Document number D533215 Rev E , 2 WWW.di0dES.COm
ZHCS400
Document number: DS33215 Rev. 8 - 2
1 of 6
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© Diodes Incorporated
ZHCS400
40V SURFACE MOUNT SCHOTTKY BARRIER DIODE
Product Summary
V
R = 40V
I
F = 0.40A
I
R = 40μA
Description and Applications
This compact SOD323 packaged Schottky diode offers users an
excellent performance combination comprising high current operation,
extremely low leakage and low forward voltage ensuring suitability for
applications requiring efficient operation at higher temperatures
(above 85°C) see Operational efficiency chart on page 4.
DC – DC Converters
Mobile Telecomms
PCMCIA
Features and Benefits
Low VF
High Current Capability (IF = 0.40A)
Miniature Surface Mount Package
Low VF, fast switching Schottky
Package thermally rated to 150°C
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOD323
Case Material: UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: Cathode Band
Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.004 grams (approximate)
Ordering Information (Note 1)
Device Packaging Shipping
ZHCS400TA SOD323 3,000/Tape & Reel
ZHCS400TC SOD323 10,000/Tape & Reel
Notes: 1. For Packaging Details, go to our website at http://www.diodes.com.
Marking Information
Top View
BD = Product Type Marking Code
SOD323
BD
Cathode
Anode
TSTG 400 U ‘P 200 Dues '3 new *4 nc-m m Smul: m“ IODu 1m Ium 100m ‘ to 100 Ik PulseWidlh Transient Thermal Resistance 400m 200m PD - Power Dissipation (Wans) \ 50 Ion TA- Ambiem Temperamre ('CD 150 ZHCS400 Document number 0533215 Rev. 5 , 2 2015 www.diodes.com
ZHCS400
Document number: DS33215 Rev. 8 - 2
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ZHCS400
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol Value Units
Continuous Reverse Voltage VR 40 V
Continuous Forward Current IF 400 mA
Forward Voltage @IF = 400mA VF 500 mV
Average Peak Forward Current; D.C. = 50% IFAV 1000 mA
Continuous Drain Current (Note x) t
100
μ
s IFSM 6.75 A
t
10ms 3 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation, TA = 25°C PD 250 mW
Storage Temperature Range TSTG -55 to +150 °C
E 1'6 _ Duty Cycle =0.25 v 7 Ti:85°C .8 1-4 _ If: Rated Current / o ,/ L g 1.2 E / / 8 1.0 ( .9 Tu ZLLSS ' — E 0.8 / Zl-IICS Selrwes ‘ i enesi o 20510152025303540 Reverse Voltage (V) Operational Efficiency Example ZHCS400 sols Document number 0533215 Rev 372 www.diodes.com
ZHCS400
Document number: DS33215 Rev. 8 - 2
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ZHCS400
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Reverse Breakdown Voltage V
(
BR
)
R 40 60 - V
IR = 200μA
Forward Voltage VF
- 270 300
mV
IF = 50mA
- 300 350 IF = 100mA
- 370 460 IF = 250mA
- 425 500 IF = 400mA
- 550 670 IF = 750mA
- 640 780 IF = 1,000mA
- 810 1050 IF = 1,500mA
- 440 - IF = 500mA, TA = 100°C
Reverse Current IR - 15 40
μA VR = 30V
Diode Capacitance CD - 20 - pF
f = 1MHz, VR = 25V
Operational efficiency chart
The operational efficiency chart indicates the beneficial use of the ZLLS series diodes in applications requiring higher voltage, higher temperature
operation. Circuits requiring low voltage low temperature operation will benefit from using Zetex low VF ZHCS series diodes.
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ZHCS400
Document number: DS33215 Rev. 8 - 2
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www.diodes.com March 2012
© Diodes Incorporated
ZHCS400
ZHCS400
Document number: DS33215 Rev. 8 - 2
5 of 6
www.diodes.com March 2012
© Diodes Incorporated
ZHCS400
Package Outline Dimensions
Suggested Pad Layout
SOD323
Dim Min Max
A 0.25 0.35
B 1.20 1.40
C 2.30 2.70
H 1.60 1.80
J 0.00 0.10
K 1.0 1.1
L 0.20 0.40
M 0.10 0.15
α 0° 8°
All Dimensions in mm
Dimensions Value (in mm)
Z 3.75
G 1.05
X 0.65
Y 1.35
C 2.40
K
L
MJ
C
H
BA
Z
X
C
GY
m5” ZHCS400 6 cl 6 Document number D533215 Rev E , 2 WWW.diOdeS.COm
ZHCS400
Document number: DS33215 Rev. 8 - 2
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© Diodes Incorporated
ZHCS400
IMPORTANT NOTICE
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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1. are intended to implant into the body, or
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Copyright © 2012, Diodes Incorporated
www.diodes.com

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