FMMT596 Datasheet by Diodes Incorporated

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Issue 4 - July 2007 1 www.zetex.com
© Zetex Semiconductors plc 2007
FMMT596
SOT 23 PNP silicon planar high voltage transistor
Ordering information
Device marking
596
Absolute maximum ratings
Device Reel size
(inches
Tape width
(mm)
Quantity
per reel
FMMT596TA 7 8 3,000
Parameter Symbol Value Unit
Collector-base voltage VCBO -220 V
Collector-emitter voltage VCEO -200 V
Emitter-base voltage VEBO -5 V
Peak pulse current ICM -1 A
Continuous collector current IC-0.3 A
Base current IB-200 mA
Power dissipation at Tamb=25°C Ptot 500 mW
Operating and storage temperature range Tj:Tstg -55 to +150 °C
C
E
B
Pinout - top view
C
E
B
FMMT596
Issue 4 - July 2007 2 www.zetex.com
© Zetex Semiconductors plc 2007
Electrical characteristics (Tamb = 25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown
voltage
V(BR)CBO -220 V IC=-100A
Collector-emitter breakdown
voltage
V(BR)CEO -200 V IC=-10mA (*)
NOTES:
(*) Measured under pulsed conditions. Pulse width = 300s. Duty cycle 2%.
Emitter-base breakdown
voltage
V(BR)EBO -5 V IE=-100A
Collector cut-off current ICBO -100 nA VCB=-200V
Emitter cut-off current IEBO -100 nA VEB=-4V
Collector-emitter cut-off
current
ICES -100 nA VCES=-200V
Collector-emitter saturation
voltage
VCE(sat) -0.2
-0.35
V
V
IC=-100mA, IB=-10mA,
IB=-250mA,
IB=-25mA(*)
Base-emitter saturation
voltage
VBE(sat) -1.0 V IC=-250mA, IB=-25mA(*)
Base-emitter turn-on voltage VBE(on) -0.9 V IC=-250mA,
VCE=-10V(*)
Static forward current
transfer ratio
hFE 100 IC=-1mA, VCE=-10V
100 IC=-100mA, VCE=-10V(*)
85 300 IC=-250mA, VCE=-10V(*)
35 IC=-400mA, VCE=-10V(*)
Transition frequency fT150 MHz IC=-50mA, VCE=-10V,
f=100MHz
Output capacitance Cobo 10 pF VCB=-10V, f=1MHz
Switching times td 22 ns IC=-200mA, VCC=-80V
Ib1=Ib2=-20mA
tr 19
ts 472
tf 70
Switching times td 44 ns IC=-100mA, VCC=-80V
Ib1=Ib2=-10mA
tr 31
ts 665
tf 76
FMMT596
Issue 4 - July 2007 3 www.zetex.com
© Zetex Semiconductors plc 2007
Typucal characteristics
1mA
0
0.1
0.2
0.3
0.4 +25°C
IC/IB=10
IC/IB=50
10mA 100mA
IC-collector current
VCE(sat) v IC
VCE(sat)- (V)
1A 1mA
0
0.1
0.2
0.3
0.4
-55°C
+25°C
+100°C
IC/IB=10
10mA 100mA
IC-collector current
VCE(sat) v IC
VCE(sat)- (V)
1mA
1mA
0
80
160
240
320
+100°C
+25°C
-55°C
VCE=10V
10mA 100mA
IC-collector current
hFE v IC
hFE - typical gain
1A 1mA
0
0.2
0.4
0.6
0.8
1.0
-55°C
+25°C
+100°C
-55°C
+25°C
+100°C
IC/IB=10
VCE=10V
10mA 100mA
IC-collector current
VBE(sat) v IC
VBE(sat)- (V)
1mA
1mA
0
0.4
0.2
0.6
0.8
1.0
10mA 100mA
IC-collector current
VBE(on) v IC
VBE(on)- (V)
1A 0.1V
0.001
0.01
0.1
1
DC
1s
100ms
1ms
100s
1V 10V
VCE-collector emitter voltage (V)
Safe operating area
IC-collector current (A)
100V 1000V
FMMT596
Issue 4 - July 2007 4 www.zetex.com
© Zetex Semiconductors plc 2007
Package outline - SOT23
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
Dim. Millimeters Inches Dim. Millimeters Inches
Min. Max. Min. Max. Min. Max. Min. Max.
A - 1.12 - 0.044 e1 1.90 NOM 0.075 NOM
A1 0.01 0.10 0.0004 0.004 E 2.10 2.64 0.083 0.104
b 0.30 0.50 0.012 0.020 E1 1.20 1.40 0.047 0.055
c 0.085 0.20 0.003 0.008 L 0.25 0.60 0.0098 0.0236
D 2.80 3.04 0.110 0.120 L1 0.45 0.62 0.018 0.024
e0.95 NOM0.037 NOM-----
E
e
L
e1
D
A
c
E1
L1
A1
b
3 leads
FMMT596
Issue 4 - July 2007 5 www.zetex.com
© Zetex Semiconductors plc 2007
Intentionally left blank
FMMT596
Issue 4 - July 2007 6 www.zetex.com
© Zetex Semiconductors plc 2007
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© 2007 Published by Zetex Semiconductors plc
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