MMSD4148T(1,3) Datasheet by ON Semiconductor

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0N Semiconductor® www.0nsem i .com
© Semiconductor Components Industries, LLC, 2016
June, 2016 − Rev. 13 1Publication Order Number:
MMSD4148T1/D
MMSD4148, SMMSD4148
Switching Diode
Features
SOD−123 Surface Mount Package
High Breakdown Voltage
Fast Speed Switching Time
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable*
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Continuous Reverse Voltage VR100 V
Forward Current IF200 mA
Forward Surge Current t < 1 sec
(Note 1) t = 1 msec IFSM 1.0
2.0 A
Repetitive Peak Forward Current
(Pulse Wave = 1 sec, Duty Cycle = 66%) IFRM 0.5 A
Operating and Storage Junction Temperature
Range TJ, Tstg −55 to
+150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Typical Values
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board (Note 2)
TA = 25°C
Derate above 25°C
PD425
3.4
mW
mW/°C
Thermal Resistance Junction−to−Ambient RqJA 290 °C/W
2. FR−5 = 1.0 oz Cu, 1.0 inz pad
Device Package Shipping
ORDERING INFORMATION
SOD−123
CASE 425
STYLE 1
1
CATHODE
2
ANODE
MMSD4148T1G SOD−123
(Pb−Free) 3,000 /
Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
5I = Device Code
M = Date Code
G= Pb−Free Package
www.onsemi.com
(Note: Microdot may be in either location)
MMSD4148T3G SOD−123
(Pb−Free) 10,000 /
Tape & Reel
15I M G
G
MARKING DIAGRAM
SMMSD4148T1G* SOD−123
(Pb−Free) 3,000 /
Tape & Reel
SMMSD4148T3G* SOD−123
(Pb−Free) 10,000 /
Tape & Reel
www.cmsemi .com
MMSD4148, SMMSD4148
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(IBR = 100 mA) V(BR) 100 − V
Reverse Voltage Leakage Current
(VR = 20 V)
(VR = 75 V)
IR
25
5.0 nA
mA
Forward Voltage
(IF = 10 mA) VF 1000 mV
Diode Capacitance
(VR = 0 V, f = 1.0 MHz) CD 4.0 pF
Reverse Recovery Time
(IF = IR = 10 mA) (Figure 1) trr 4.0 ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.
2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
3. tp » trr
+10 V 2 k
820 W
0.1 mF
DUT
VR
100 mH
0.1 mF
50 W OUTPUT
PULSE
GENERATOR
50 W INPUT
SAMPLING
OSCILLOSCOPE
trtpt
10%
90%
IF
IR
trr t
iR(REC) = 1 mA
OUTPUT PULSE
(IF = IR = 10 mA; measured
at iR(REC) = 1 mA)
IF
INPUT SIGNAL
Figure 1. Recovery Time Equivalent Test Circuit
MMSD4148, SMMSD4148
www.onsemi.com
3
IR, REVERSE CURRENT (A)μ
100
0.2 0.4
VF, FORWARD VOLTAGE (VOLTS)
0.6 0.8 1.0 1.2
10
1.0
0.1
TA = 85°C
10
0
VR, REVERSE VOLTAGE (VOLTS)
1.0
0.1
0.01
0.001 10 20 30 40 50
0.68
0
VR, REVERSE VOLTAGE (VOLTS)
0.64
0.60
0.56
0.52
CD, DIODE CAPACITANCE (pF)
246 8
IF, FORWARD CURRENT (mA)
TA = 25°C
TA = -40°C
TA = 150°C
TA = 125°C
TA = 85°C
TA = 55°C
TA = 25°C
Figure 2. Forward Voltage
Figure 3. Leakage Current
Figure 4. Capacitance
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SOD123
CASE 42504
ISSUE G
DATE 07 OCT 2009
SCALE 5:1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
E
b
DA
L
C
1
2
A1
DIM MIN NOM MAX
MILLIMETERS INCHES
A0.94 1.17 1.35 0.037
A1 0.00 0.05 0.10 0.000
b0.51 0.61 0.71 0.020
c
1.60
0.15
0.055D1.40 1.80
E2.54 2.69 2.84 0.100
---
3.68 0.140
L0.25
3.86
0.010
HE
0.046
0.002
0.024
0.063
0.106
0.145
0.053
0.004
0.028
0.071
0.112
0.152
MIN NOM MAX
3.56
HE
---
--- ---
0.006
--- ---
--- ---
GENERIC
MARKING DIAGRAM*
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
*This information is generic. Please refer to device data
sheet for actual part marking. PbFree indicator, “G” or
microdot “ G”, may or may not be present.
XXX = Specific Device Code
M = Date Code
G= PbFree Package
XXXMG
G
1
STYLE 1:
PIN 1. CATHODE
2. ANODE
1.22
0.048
0.91
0.036
2.36
0.093
4.19
0.165
ǒmm
inchesǓ
SCALE 10:1
q
--- ---
q00
10 10
°°° °
(Note: Microdot may be in either location)
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
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PAGE 1 OF 1
SOD123
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www.onsemi.com
1
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