MMBT5087LT Datasheet by ON Semiconductor

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0N Semiconductor® www.0nsemi.com 4%” L4
© Semiconductor Components Industries, LLC, 1994
October, 2016 − Rev. 6 1Publication Order Number:
MMBT5087LT1/D
MMBT5087L
Low Noise Transistor
PNP Silicon
Features
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
CollectorEmitter Voltage VCEO −50 Vdc
CollectorBase Voltage VCBO −50 Vdc
EmitterBase Voltage VEBO −3.0 Vdc
Collector Current − Continuous IC−50 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board,
(Note 1) TA = 25°C
Derate above 25°C
PD225
1.8 mW
mW/°C
Thermal Resistance, Junction−to−Ambient RqJA 556 °C/W
Total Device Dissipation Alumina
Substrate, (Note 2) TA = 25°C
Derate above 25°C
PD300
2.4 mW
mW/°C
Thermal Resistance, Junction−to−Ambient RqJA 417 °C/W
Junction and Storage Temperature TJ, Tstg −55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
SOT−23 (TO−236)
CASE 318
STYLE 6
Device Package Shipping
ORDERING INFORMATION
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
MMBT5087LT1G,
NSVMMBT5087LT1G
SOT−23
(Pb−Free)
3,000 / Tape &
Reel
1
2
3
MMBT5087LT3G,
NSVMMBT5087LT3G
SOT−23
(Pb−Free)
10,000 / Tape &
Reel
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
1
2Q M G
G
2Q = Device Code
M = Date Code*
G= Pb−Free Package
(Note: Microdot may be in either location)
MARKING DIAGRAM
COLLECTOR
3
1
BASE
2
EMITTER
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(IC = −1.0 mAdc, IB = 0) V(BR)CEO −50 − Vdc
Collector−Base Breakdown Voltage
(IC = −100 mAdc, IE = 0) V(BR)CBO −50 − Vdc
Collector Cutoff Current
(VCB = −10 Vdc, IE = 0)
(VCB = −35 Vdc, IE = 0)
ICBO
−10
−50
nAdc
ON CHARACTERISTICS
DC Current Gain
(IC = −100 mAdc, VCE = −5.0 Vdc)
(IC = −1.0 mAdc, VCE = −5.0 Vdc)
(IC = −10 mAdc, VCE = −5.0 Vdc)
hFE 250
250
250
800
Collector−Emitter Saturation Voltage
(IC = −10 mAdc, IB = −1.0 mAdc) VCE(sat) −0.3 Vdc
Base−Emitter Saturation Voltage
(IC = −10 mAdc, IB = −1.0 mAdc) VBE(sat) 0.85 Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain — Bandwidth Product
(IC = −500 mAdc, VCE = −5.0 Vdc, f = 20 MHz) fT40 − MHz
Output Capacitance
(VCB = −5.0 Vdc, IE = 0, f = 1.0 MHz) Cobo 4.0 pF
Small−Signal Current Gain
(IC = −1.0 mAdc, VCE = −5.0 Vdc, f = 1.0 kHz) hfe 250 900
Noise Figure
(IC = −20 mAdc, VCE = −5.0 Vdc, RS = 10 kW, f = 1.0 kHz)
(IC = −100 mAdc, VCE = −5.0 Vdc, RS = 3.0 kW, f = 1.0 kHz)
NF
2.0
2.0
dB
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
TYPICAL NOISE CHARACTERISTICS
(VCE = −5.0 Vdc, TA = 25°C)
Figure 1. Noise Voltage
f, FREQUENCY (Hz)
5.0
7.0
10
3.0
Figure 2. Noise Current
f, FREQUENCY (Hz)
1.0
10 20 50 100 200 500 1.0k 2.0k 5.0k 10k
1.0
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.1
BANDWIDTH = 1.0 Hz
RS 0
IC = 10 mA
100 mA
en, NOISE VOLTAGE (nV)
In, NOISE CURRENT (pA)
30 mA
BANDWIDTH = 1.0 Hz
RS ≈∞
IC = 1.0 mA
300 mA
100 mA
30 mA
10 mA
10 20 50 100 200 500 1.0k 2.0k 5.0k 10k
2.0 1.0 mA
0.2
300 mA
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NOISE FIGURE CONTOURS
(VCE = −5.0 Vdc, TA = 25°C)
500k
100
200
500
1.0k
10k
5.0k
20k
50k
100k
200k
2.0k
1.0M
500k
100
200
500
1.0k
10k
5.0k
20k
50k
100k
200k
2.0k
1.0M
Figure 3. Narrow Band, 100 Hz
IC, COLLECTOR CURRENT (mA)
Figure 4. Narrow Band, 1.0 kHz
IC, COLLECTOR CURRENT (mA)
10
0.5 dB
BANDWIDTH = 1.0 Hz
RS, SOURCE RESISTANCE (OHMS)
RS, SOURCE RESISTANCE (OHMS)
Figure 5. Wideband
IC, COLLECTOR CURRENT (mA)
10
10 Hz to 15.7 kHz
RS, SOURCE RESISTANCE (OHMS)
Noise Figure is Defined as:
NF +20 log10ƪen2)4KTRS)In2RS2
4KTRSƫ1ń2
= Noise Voltage of the Transistor referred to the input. (Figure 3)
= Noise Current of the Transistor referred to the input. (Figure 4)
= Boltzman’s Constant (1.38 x 10−23 j/°K)
= Temperature of the Source Resistance (°K)
= Source Resistance (Ohms)
en
In
K
T
RS
1.0 dB
2.0 dB
3.0 dB
20 30 50 70 100 200 300 500 700 1.0k 10 20 30 50 70 100 200 300 500 700 1.0k
500k
100
200
500
1.0k
10k
5.0k
20k
50k
100k
200k
2.0k
1.0M
20 30 50 70 100 200 300 500 700 1.0k
BANDWIDTH = 1.0 Hz
5.0 dB
0.5 dB
1.0 dB
2.0 dB
3.0 dB
5.0 dB
0.5 dB
1.0 dB
2.0 dB
3.0 dB
5.0 dB
sic to 125°C 5% to two
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TYPICAL STATIC CHARACTERISTICS
Figure 6. Collector Saturation Region
IC, COLLECTOR CURRENT (mA)
1.4
Figure 7. Collector Characteristics
IC, COLLECTOR CURRENT (mA)
V, VOLTAGE (VOLTS)
1.0 2.0 5.0 10 20 50
1.6
100
TJ = 25°C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE(on) @ VCE = 1.0 V
*qVC for VCE(sat)
qVB for VBE
0.1 0.2 0.5
Figure 8. “On” Voltages
IB, BASE CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
0
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.002
TA = 25°C
IC = 1.0 mA 10 mA 100 mA
Figure 9. Temperature Coefficients
50 mA
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
40
60
80
100
20
0
0
IC, COLLECTOR CURRENT (mA)
TA = 25°C
PULSE WIDTH = 300 ms
DUTY CYCLE 2.0%
IB = 400 mA
350 mA
300 mA250 mA
200 mA
*APPLIES for IC/IB hFE/2
25°C to 125°C
-55°C to 25°C
25°C to 125°C
-55°C to 25°C
0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 5.0 10 15 20 25 30 35 40
1.2
1.0
0.8
0.6
0.4
0.2
02.4
0.8
0
1.6
0.8
1.0 2.0 5.0 10 20 50 100
0.1 0.2 0.5
V, TEMPERATURE COEFFICIENTS (mV/ C)°θ
150 mA
100 mA
50 mA
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TYPICAL DYNAMIC CHARACTERISTICS
C, CAPACITANCE (pF)
Figure 10. Turn−On Time
IC, COLLECTOR CURRENT (mA)
500
Figure 11. Turn−Off Time
IC, COLLECTOR CURRENT (mA)
2.0 5.0 10 20 30 50
1000
Figure 12. Current−Gain — Bandwidth Product
IC, COLLECTOR CURRENT (mA)
Figure 13. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
3.01.0
500
0.5
10
t, TIME (ns)
t, TIME (ns)
f, CURRENT-GAIN — BANDWIDTH PRODUCT (MHz)
T
5.0
7.0
10
20
30
50
70
100
300
7.0 70 100
VCC = 3.0 V
IC/IB = 10
TJ = 25°C
td @ VBE(off) = 0.5 V
tr
10
20
30
50
70
100
200
300
500
700
-2.0
-1.0
VCC = -3.0 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
ts
tf
50
70
100
200
300
0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50
TJ = 25°C
VCE = 20 V
5.0 V
1.0
2.0
3.0
5.0
7.0
0.1 0.2 0.5 1.0 2.0 5.0 10 20 500.05
Cib
Cob
200
-3.0 -5.0 -7.0 -20
-10 -30 -50 -70 -100
TJ = 25°C
MMBT5087L
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Figure 14. Thermal Response
t, TIME (ms)
1.0
0.01
r(t) TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.7
0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k 100k
D = 0.5
0.2
0.1
0.05
0.02
0.01 SINGLE PULSE
DUTY CYCLE, D = t1/t2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1 (SEE AN569/D)
ZqJA(t) = r(t) RqJA
TJ(pk) − TA = P(pk) ZqJA(t)
t1
t2
P(pk)
FIGURE 16
TJ, JUNCTION TEMPERATURE (°C)
104
-4
0
IC, COLLECTOR CURRENT (nA)
Figure 15. Typical Collector Leakage Current
DESIGN NOTE: USE OF THERMAL RESPONSE DATA
A train of periodical power pulses can be represented by
the model as shown in Figure 16. Using the model and the
device thermal response the normalized effective transient
thermal resistance of Figure 14 was calculated for various
duty cycles.
To find ZqJA(t), multiply the value obtained from Figure
14 by the steady state value RqJA.
Example:
Dissipating 2.0 watts peak under the following conditions:
t1 = 1.0 ms, t2 = 5.0 ms (D = 0.2)
Using Figure 14 at a pulse width of 1.0 ms and D = 0.2, the
reading of r(t) is 0.22.
The peak rise in junction temperature is therefore
DT = r(t) x P(pk) x RqJA = 0.22 x 2.0 x 200 = 88°C.
For more information, see ON Semiconductor Application
Note AN569/D, available from the Literature Distribution
Center or on our website at www.onsemi.com.
10-2
10-1
100
101
102
103
-2
0
0 + 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160
VCC = 30 V
ICEO
ICBO
AND
ICEX @ VBE(off) = 3.0 V
+ D j m7 * ‘71, "ii: EL {1 EJ‘T ; i i @%
MMBT5087L
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7
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
SOLDERING FOOTPRINT*
VIEW C
L
0.25
L1
e
EE
b
A
SEE VIEW C
DIM
AMIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.000
b0.37 0.44 0.50 0.015
c0.08 0.14 0.20 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.30 0.43 0.55 0.012
0.039 0.044
0.002 0.004
0.017 0.020
0.006 0.008
0.114 0.120
0.051 0.055
0.075 0.080
0.017 0.022
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
HE
0.35 0.54 0.69 0.014 0.021 0.027
c0 −−− 10 0 −−− 10
T°°°°
T
3X
TOP VIEW
SIDE VIEW END VIEW
2.90
0.80
DIMENSIONS: MILLIMETERS
0.90
PITCH
3X
3X 0.95
RECOMMENDED
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
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