MMBF2201NT1 Datasheet by ON Semiconductor

View All Related Products | Download PDF Datasheet
Publication Order Number:
MMBF2201NT1/D
© Semiconductor Components Industries, LLC, 2013
August, 2013 Rev. 7
1
MMBF2201N, NVF2201N
Power MOSFET
300 mAmps, 20 Volts
NChannel SC70/SOT323
These miniature surface mount MOSFETs low RDS(on) assure
minimal power loss and conserve energy, making these devices ideal
for use in small power management circuitry. Typical applications are
dcdc converters, power management in portable and
batterypowered products such as computers, printers, PCMCIA
cards, cellular and cordless telephones.
Features
Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Miniature SC70/SOT323 Surface Mount Package Saves
Board Space
NVF Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AECQ101
Qualified and PPAP Capable*
These Devices are PbFree and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
DraintoSource Voltage VDSS 20 Vdc
GatetoSource Voltage Continuous VGS ±20 Vdc
Drain Current
Continuous @ TA = 25°C
Continuous @ TA = 70°C
Pulsed Drain Current (tp 10 ms)
ID
ID
IDM
300
240
750
mAdc
Total Power Dissipation @ TA = 25°C
(Note 1)
Derate above 25°C
PD150
1.2
mW
mW/°C
Operating and Storage Temperature Range TJ, Tstg 55 to 150 °C
Thermal Resistance, JunctiontoAmbient RqJA 833 °C/W
Maximum Lead Temperature for Soldering
Purposes, for 10 seconds
TL260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Mounted on G10/FR4 glass epoxy board using minimum recommended
footprint.
3
1
2
NChannel
300 mAMPS, 20 VOLTS
RDS(on) = 1 W
Device Package Shipping
ORDERING INFORMATION
SC70/SOT323
CASE 419
STYLE 8
MARKING DIAGRAM
AND PIN ASSIGNMENT
http://onsemi.com
N1 = Device Code
M = Date Code*
G= PbFree Package
*Date Code orientation may vary depending
upon manufacturing location.
(Note: Microdot may be in either location)
MMBF2201NT1G SOT323
(PbFree)
3000 / Tape &
Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1
Gate
3
Drain
2
Source
2
3
1
N1 M G
G
NVF2201NT1G* SOT323
(PbFree)
3000 / Tape &
Reel
v55 : 45 v :InumA \\a—
MMBF2201N, NVF2201N
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(VGS = 0 Vdc, ID = 10 mA)
V(BR)DSS 20 Vdc
Zero Gate Voltage Drain Current
(VDS = 16 Vdc, VGS = 0 Vdc)
(VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
1.0
10
mAdc
GateBody Leakage Current (VGS = ±20 Vdc, VDS = 0) IGSS ±100 nAdc
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
(VDS = VGS, ID = 250 mAdc)
VGS(th) 1.0 1.7 2.4 Vdc
Static DraintoSource OnResistance
(VGS = 10 Vdc, ID = 300 mAdc)
(VGS = 4.5 Vdc, ID = 100 mAdc)
rDS(on)
0.75
1.0
1.0
1.4
W
Forward Transconductance (VDS = 10 Vdc, ID = 200 mAdc) gFS 450 mMhos
DYNAMIC CHARACTERISTICS
Input Capacitance (VDS = 5.0 V) Ciss 45 pF
Output Capacitance (VDS = 5.0 V) Coss 25
Transfer Capacitance (VDG = 5.0 V) Crss 5.0
SWITCHING CHARACTERISTICS (Note 3)
TurnOn Delay Time
(VDD = 15 Vdc, ID = 300 mAdc,
RL = 50 W)
td(on) 2.5 ns
Rise Time tr2.5
TurnOff Delay Time td(off) 15
Fall Time tf0.8
Gate Charge (See Figure 5) QT1400 pC
SOURCEDRAIN DIODE CHARACTERISTICS
Continuous Current IS 0.3 A
Pulsed Current ISM 0.75
Forward Voltage (Note 3) VSD 0.85 V
2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
3. Switching characteristics are independent of operating junction temperature.
TYPICAL CHARACTERISTICS
Figure 1. Typical Drain Characteristics
VDS, DRAIN-SOURCE VOLTAGE (VOLTS)
Figure 2. On Resistance versus Temperature
TEMPERATURE (°C)
ID, DRAIN CURRENT (AMPS)
RDS, ON RESISTANCE (OHMS)
0.5
0.6
0.7
0.8
0.9
1.0
0
4087910
0.6
0.8
1.0
1.2
1.4
1.6
0
-60123 56
0.1
0.2
0.3
0.4
0.4
0.2
-40 -20 0 20 40 60 80 100 120 140 160
VGS = 4 V
VGS = 3.5 V
VGS = 2.5 V
VGS = 3 V
VGS = 4.5 V
VGS = 10 V
ID = 100 mA
ID = 300 mA
MMBF2201N, NVF2201N
http://onsemi.com
3
TYPICAL CHARACTERISTICS
C, CAPACITANCE (pF)
Figure 3. On Resistance versus GateSource
Voltage
GATE-SOURCE VOLTAGE (VOLTS)
Figure 4. On Resistance versus Drain Current
ID, DRAIN CURRENT (AMPS)
RDS, ON RESISTANCE (OHMS)
Figure 5. SourceDrain Forward Voltage
VSD, SOURCE-DRAIN FORWARD VOLTAGE (VOLTS)
Figure 6. Capacitance Variation
VDS, DRAIN-SOURCE VOLTAGE (VOLTS)
Figure 7. Transfer Characteristics
VGS, GATE-SOURCE VOLTAGE (VOLTS)
2
4
6
8
10
0
7096810
0.2
0.4
0.6
0.8
1.0
1.2
0
0.10 0.5
0.01
0.1
1.0
0.001
0.10
20
25
30
35
40
45
0
40 8 12 16 20
241 3 5 0.2 0.3 0.4 0.80.6 0.7
RDS, ON RESISTANCE (OHMS)
IS, SOURCE CURRENT (AMPS)
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 2 6 10 14 18
5
10
15
0.2
0.4
0.6
0.8
0.9
1.0
0
0.50 2.51.0 1.5 2.0 4.03.0 3.5
ID, DRAIN CURRENT (AMPS)
4.5
0.3
0.5
0.7
0.1
ID = 300 mA VGS = 4.5 V
VGS = 10 V
VGS = 0 V
F = 1 mHz
Ciss
Coss
Crss
-55
150
25
nnnnnnnnnnn any Dmduch havem s ccccc
MMBF2201N, NVF2201N
http://onsemi.com
4
PACKAGE DIMENSIONS
SC70 (SOT323)
CASE 41904
ISSUE N
AA2
D
e1
b
e
E
A1
c
L
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
0.05 (0.002)
1.9
0.075
0.65
0.025
0.65
0.025
0.9
0.035
0.7
0.028 ǒmm
inchesǓ
SCALE 10:1
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
HE
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.80 0.90 1.00 0.032
INCHES
A1 0.00 0.05 0.10 0.000
A2 0.70 REF
b0.30 0.35 0.40 0.012
c0.10 0.18 0.25 0.004
D1.80 2.10 2.20 0.071
E1.15 1.24 1.35 0.045
e1.20 1.30 1.40 0.047
0.035 0.040
0.002 0.004
0.014 0.016
0.007 0.010
0.083 0.087
0.049 0.053
0.051 0.055
NOM MAX
L
2.00 2.10 2.40 0.079 0.083 0.095
HE
e1 0.65 BSC
0.38
0.028 REF
0.026 BSC
0.015
0.20 0.56 0.008 0.022
STYLE 8:
PIN 1. GATE
2. SOURCE
3. DRAIN
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
N. American Technical Support: 8002829855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81358171050
MMBF2201NT1/D
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 3036752175 or 8003443860 Toll Free USA/Canada
Fax: 3036752176 or 8003443867 Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your loca
l
Sales Representative

Products related to this Datasheet

MOSFET N-CH 20V 300MA SOT-323
MOSFET N-CH 20V 300MA SOT-323
MOSFET N-CH 20V 300MA SOT-323
MOSFET N-CH 20V 300MA SOT-323
MOSFET N-CH 20V 0.3A SC70
MOSFET N-CH 20V 0.3A SC70
MOSFET N-CH 20V 0.3A SC70