PowerPAK® 1212-8 Single FETs, MOSFETs

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
SIS176LDN-T1-GE3
MOSFET P-CH 100V 10.8A PPAK
Vishay Siliconix
20.629
In Stock
1 : 0,80000 €
Cut Tape (CT)
3.000 : 0,19433 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
100 V
10.8A (Tc)
4.5V, 10V
132mOhm @ 3.8A, 10V
2.6V @ 250µA
16.5 nC @ 10 V
±20V
515 pF @ 50 V
-
27.8W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PowerPAK® 1212-8
PowerPAK® 1212-8
SIS176LDN-T1-GE3
MOSFET P-CH 30V 18A PPAK 1212-8
Vishay Siliconix
36.564
In Stock
1 : 0,82000 €
Cut Tape (CT)
3.000 : 0,20047 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
18A (Tc)
4.5V, 10V
9.4mOhm @ 15A, 10V
2.5V @ 250µA
110 nC @ 10 V
±20V
4280 pF @ 15 V
-
3.7W (Ta), 52W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PowerPAK® 1212-8
PowerPAK® 1212-8
SIS176LDN-T1-GE3
MOSFET N-CH 30V 12A PPAK1212-8
Vishay Siliconix
33.709
In Stock
1 : 0,82000 €
Cut Tape (CT)
3.000 : 0,20047 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
12A (Tc)
4.5V, 10V
24mOhm @ 7.8A, 10V
2.5V @ 250µA
12 nC @ 10 V
±20V
435 pF @ 15 V
-
3.2W (Ta), 15.6W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PowerPAK® 1212-8
PowerPAK® 1212-8
SIS176LDN-T1-GE3
MOSFET P-CH 30V 50A PPAK1212-8
Vishay Siliconix
14.812
In Stock
1 : 0,94000 €
Cut Tape (CT)
3.000 : 0,23342 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
50A (Tc)
4.5V, 10V
10.6mOhm @ 11A, 10V
2.5V @ 250µA
66 nC @ 10 V
±25V
1930 pF @ 15 V
-
3.7W (Ta), 52W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PowerPAK® 1212-8
PowerPAK® 1212-8
SIS176LDN-T1-GE3
MOSFET P-CH 20V 35A PPAK1212-8
Vishay Siliconix
20.356
In Stock
1 : 0,98000 €
Cut Tape (CT)
3.000 : 0,24425 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
35A (Tc)
2.5V, 10V
4.4mOhm @ 20A, 10V
1.5V @ 250µA
183 nC @ 10 V
±12V
5590 pF @ 10 V
-
3.7W (Ta), 52W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PowerPAK® 1212-8
PowerPAK® 1212-8
SIS176LDN-T1-GE3
MOSFET N-CH 40V 25.4A/94A PPAK
Vishay Siliconix
60.890
In Stock
1 : 0,99000 €
Cut Tape (CT)
3.000 : 0,24963 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
25.4A (Ta), 94A (Tc)
4.5V, 10V
3.25mOhm @ 10A, 10V
2.4V @ 250µA
50 nC @ 10 V
+20V, -16V
2530 pF @ 20 V
-
3.7W (Ta), 52W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PowerPAK® 1212-8
PowerPAK® 1212-8
SIS176LDN-T1-GE3
MOSFET N-CH 20V 43.7A/162A PPAK
Vishay Siliconix
33.194
In Stock
1 : 1,02000 €
Cut Tape (CT)
3.000 : 0,25767 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
43.7A (Ta), 162A (Tc)
2.5V, 10V
1.1mOhm @ 10A, 10V
1.5V @ 250µA
53 nC @ 10 V
+12V, -8V
3415 pF @ 10 V
-
3.7W (Ta), 52W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PowerPAK® 1212-8
PowerPAK® 1212-8
SIS176LDN-T1-GE3
MOSFET N-CH 20V 16A PPAK 1212-8
Vishay Siliconix
23.490
In Stock
1 : 1,06000 €
Cut Tape (CT)
3.000 : 0,27099 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
16A (Tc)
4.5V, 10V
9.5mOhm @ 10A, 10V
2.3V @ 250µA
23 nC @ 10 V
±20V
880 pF @ 10 V
-
3.5W (Ta), 27.7W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PowerPAK® 1212-8
PowerPAK® 1212-8
PowerPAK 1212-8
MOSFET N-CH 40V 16A PPAK1212-8
Vishay Siliconix
201
In Stock
1 : 1,15000 €
Cut Tape (CT)
3.000 : 0,29484 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
16A (Tc)
4.5V, 10V
8mOhm @ 10A, 10V
2.5V @ 250µA
35 nC @ 10 V
±20V
1800 pF @ 25 V
-
62.5W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PowerPAK® 1212-8
PowerPAK® 1212-8
SIS176LDN-T1-GE3
MOSFET N-CH 60V 15.8A/52A PPAK
Vishay Siliconix
11.402
In Stock
1 : 1,17000 €
Cut Tape (CT)
3.000 : 0,30415 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
15.8A (Ta), 52A (Tc)
4.5V, 10V
7.2mOhm @ 10A, 10V
2.5V @ 250µA
30 nC @ 10 V
±20V
1235 pF @ 30 V
-
3.6W (Ta), 39W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PowerPAK® 1212-8
PowerPAK® 1212-8
SIS176LDN-T1-GE3
MOSFET P-CH 30V 35A PPAK1212-8
Vishay Siliconix
102.178
In Stock
1 : 1,20000 €
Cut Tape (CT)
3.000 : 0,31301 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
35A (Tc)
4.5V, 10V
12.3mOhm @ 13.9A, 10V
2.5V @ 250µA
59 nC @ 10 V
±25V
1800 pF @ 15 V
-
3.7W (Ta), 52W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PowerPAK® 1212-8
PowerPAK® 1212-8
SIS176LDN-T1-GE3
MOSFET N-CH 40V 35A PPAK 1212-8
Vishay Siliconix
20.499
In Stock
1 : 1,29000 €
Cut Tape (CT)
3.000 : 0,33887 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
35A (Tc)
4.5V, 10V
7.6mOhm @ 16.2A, 10V
2.2V @ 250µA
40 nC @ 10 V
±20V
1530 pF @ 20 V
-
3.8W (Ta), 52W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PowerPAK® 1212-8
PowerPAK® 1212-8
SIS176LDN-T1-GE3
MOSFET P-CH 200V 3.8A PPAK1212-8
Vishay Siliconix
19.113
In Stock
1 : 1,32000 €
Cut Tape (CT)
3.000 : 0,34913 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
200 V
3.8A (Tc)
6V, 10V
1.05Ohm @ 1A, 10V
4V @ 250µA
25 nC @ 10 V
±20V
666 pF @ 50 V
-
3.7W (Ta), 52W (Tc)
-50°C ~ 150°C (TJ)
-
-
Surface Mount
PowerPAK® 1212-8
PowerPAK® 1212-8
PowerPAK 1212-8
MOSFET N-CH 200V 14.1A PPAK
Vishay Siliconix
21.486
In Stock
1 : 1,39000 €
Cut Tape (CT)
3.000 : 0,37005 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
200 V
14.1A (Tc)
7.5V, 10V
105mOhm @ 7A, 10V
4V @ 250µA
14 nC @ 7.5 V
±20V
608 pF @ 100 V
-
57W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PowerPAK® 1212-8
PowerPAK® 1212-8
PowerPAK 1212-8
MOSFET N-CH 80V 18A PPAK1212-8
Vishay Siliconix
7.957
In Stock
1 : 1,42000 €
Cut Tape (CT)
3.000 : 0,37908 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
18A (Tc)
4.5V, 10V
21mOhm @ 10A, 10V
2.5V @ 250µA
21 nC @ 10 V
±20V
1358 pF @ 40 V
-
62.5W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PowerPAK® 1212-8
PowerPAK® 1212-8
SIS176LDN-T1-GE3
MOSFET P-CH 30V 35A PPAK1212-8
Vishay Siliconix
12.419
In Stock
1 : 1,43000 €
Cut Tape (CT)
3.000 : 0,38373 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
35A (Tc)
4.5V, 10V
7mOhm @ 15A, 10V
2.5V @ 250µA
126 nC @ 10 V
±20V
4427 pF @ 15 V
-
3.7W (Ta), 52W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PowerPAK® 1212-8
PowerPAK® 1212-8
SIS176LDN-T1-GE3
MOSFET N-CH 60V 40A PPAK1212-8
Vishay Siliconix
6.339
In Stock
1 : 1,48000 €
Cut Tape (CT)
3.000 : 0,39736 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
40A (Tc)
4.5V, 10V
8.5mOhm @ 20A, 10V
2.6V @ 250µA
32 nC @ 10 V
±20V
1320 pF @ 30 V
-
3.7W (Ta), 52W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PowerPAK® 1212-8
PowerPAK® 1212-8
SIS176LDN-T1-GE3
MOSFET N-CH 100V 30A PPAK1212-8
Vishay Siliconix
10.743
In Stock
1 : 1,68000 €
Cut Tape (CT)
3.000 : 0,46461 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
30A (Tc)
4.5V, 10V
23.5mOhm @ 10A, 10V
3V @ 250µA
29 nC @ 10 V
±20V
802 pF @ 50 V
-
3.7W (Ta), 52W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PowerPAK® 1212-8
PowerPAK® 1212-8
SIS176LDN-T1-GE3
MOSFET N-CH 100V 30A PPAK1212-8
Vishay Siliconix
832
In Stock
1 : 1,85000 €
Cut Tape (CT)
3.000 : 0,51850 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
30A (Tc)
4.5V, 10V
29mOhm @ 10A, 10V
3V @ 250µA
21.5 nC @ 10 V
±20V
611 pF @ 50 V
-
3.7W (Ta), 52W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PowerPAK® 1212-8
PowerPAK® 1212-8
SIS176LDN-T1-GE3
MOSFET P-CH 40V 18A PPAK1212-8
Vishay Siliconix
1.586
In Stock
1 : 2,05000 €
Cut Tape (CT)
3.000 : 0,58614 €
Tape & Reel (TR)
Tape & Reel (TR)
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Active
P-Channel
MOSFET (Metal Oxide)
40 V
18A (Tc)
4.5V, 10V
25mOhm @ 9.3A, 10V
3V @ 250µA
62 nC @ 10 V
±20V
1980 pF @ 20 V
-
3.7W (Ta), 39W (Tc)
-50°C ~ 150°C (TJ)
-
-
Surface Mount
PowerPAK® 1212-8
PowerPAK® 1212-8
SIS176LDN-T1-GE3
MOSFET P-CH 60V 3.6A PPAK1212-8
Vishay Siliconix
70.108
In Stock
1 : 2,16000 €
Cut Tape (CT)
3.000 : 0,61539 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
3.6A (Ta)
4.5V, 10V
65mOhm @ 5.7A, 10V
3V @ 250µA
25 nC @ 10 V
±20V
-
-
1.5W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PowerPAK® 1212-8
PowerPAK® 1212-8
SIS176LDN-T1-GE3
MOSFET P-CH 60V 3.6A PPAK1212-8
Vishay Siliconix
11.932
In Stock
1 : 2,16000 €
Cut Tape (CT)
3.000 : 0,62437 €
Tape & Reel (TR)
Tape & Reel (TR)
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Active
P-Channel
MOSFET (Metal Oxide)
60 V
3.6A (Ta)
4.5V, 10V
65mOhm @ 5.7A, 10V
3V @ 250µA
25 nC @ 10 V
±20V
-
-
1.5W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PowerPAK® 1212-8
PowerPAK® 1212-8
SIS176LDN-T1-GE3
MOSFET N-CH 75V 16A PPAK1212-8
Vishay Siliconix
39.390
In Stock
1 : 2,43000 €
Cut Tape (CT)
3.000 : 0,72335 €
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N-Channel
MOSFET (Metal Oxide)
75 V
16A (Tc)
4.5V, 10V
37mOhm @ 7.2A, 10V
3V @ 250µA
24 nC @ 10 V
±20V
840 pF @ 35 V
-
3.8W (Ta), 52W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PowerPAK® 1212-8
PowerPAK® 1212-8
SIS176LDN-T1-GE3
MOSFET N-CH 20V 12.5A PPAK1212-8
Vishay Siliconix
21.159
In Stock
1 : 2,43000 €
Cut Tape (CT)
3.000 : 0,72335 €
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N-Channel
MOSFET (Metal Oxide)
20 V
12.5A (Ta)
2.5V, 4.5V
6.2mOhm @ 19.5A, 4.5V
1.5V @ 250µA
27 nC @ 4.5 V
±12V
-
-
1.5W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PowerPAK® 1212-8
PowerPAK® 1212-8
SIS176LDN-T1-GE3
MOSFET P-CH 150V 8.9A PPAK1212-8
Vishay Siliconix
7.724
In Stock
1 : 2,43000 €
Cut Tape (CT)
3.000 : 0,72335 €
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Tape & Reel (TR)
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P-Channel
MOSFET (Metal Oxide)
150 V
8.9A (Tc)
6V, 10V
295mOhm @ 4A, 10V
4V @ 250µA
42 nC @ 10 V
±20V
1190 pF @ 50 V
-
3.7W (Ta), 52W (Tc)
-50°C ~ 150°C (TJ)
-
-
Surface Mount
PowerPAK® 1212-8
PowerPAK® 1212-8
Showing
of 238

Single FET, MOSFETs


Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

  • Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
  • Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

  1. High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
  2. Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
  3. High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.