GaNFET (Gallium Nitride) Single FETs, MOSFETs

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
EPC2203
GANFET N-CH 80V 1.7A DIE
EPC
26.819
In Stock
1 : 1,24000 €
Cut Tape (CT)
2.500 : 0,33296 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
80 V
1.7A (Ta)
5V
80mOhm @ 1A, 5V
2.5V @ 600µA
0.83 nC @ 5 V
+5.75V, -4V
88 pF @ 50 V
-
-
-40°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
Die
Die
eGaN Series
GANFET NCH 15V 3.4A DIE
EPC
22.734
In Stock
1 : 1,48000 €
Cut Tape (CT)
2.500 : 0,40860 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
15 V
3.4A (Ta)
5V
30mOhm @ 1.5A, 5V
2.5V @ 1mA
0.93 nC @ 5 V
-
105 pF @ 6 V
-
-
-40°C ~ 150°C (TJ)
-
-
Surface Mount
Die
Die
EPC2070
TRANS GAN DIE 100V .022OHM
EPC
2.380
In Stock
1 : 1,48000 €
Cut Tape (CT)
2.500 : 0,40860 €
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
100 V
1.7A (Ta)
5V
23mOhm @ 3A, 5V
2.5V @ 1.5mA
2.5 nC @ 5 V
+6V, -4V
386 pF @ 50 V
-
-
-40°C ~ 150°C (TJ)
-
-
Surface Mount
Die
Die
EPC2051
GANFET N-CH 100V 1.7A DIE
EPC
59.055
In Stock
1 : 1,57000 €
Cut Tape (CT)
2.500 : 0,43832 €
Tape & Reel (TR)
Tape & Reel (TR)
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Active
N-Channel
GaNFET (Gallium Nitride)
100 V
1.7A (Ta)
5V
25mOhm @ 3A, 5V
2.5V @ 1.5mA
2.1 nC @ 5 V
+6V, -4V
258 pF @ 50 V
-
-
-40°C ~ 150°C (TJ)
-
-
Surface Mount
Die
Die
eGaN Series
GANFET N-CH 100V 1.7A DIE
EPC
1.283.593
In Stock
1 : 1,66000 €
Cut Tape (CT)
2.500 : 0,46776 €
Tape & Reel (TR)
Tape & Reel (TR)
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N-Channel
GaNFET (Gallium Nitride)
100 V
1.7A (Ta)
5V
550mOhm @ 100mA, 5V
2.5V @ 80µA
0.12 nC @ 5 V
+6V, -4V
14 pF @ 50 V
-
-
-40°C ~ 150°C (TJ)
-
-
Surface Mount
Die
Die
eGaN Series
GANFET N-CH 100V 500MA DIE
EPC
121.099
In Stock
1 : 1,66000 €
Cut Tape (CT)
2.500 : 0,46776 €
Tape & Reel (TR)
Tape & Reel (TR)
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Active
N-Channel
GaNFET (Gallium Nitride)
100 V
500mA (Ta)
5V
3.3Ohm @ 50mA, 5V
2.5V @ 20µA
0.044 nC @ 5 V
+6V, -4V
8.4 pF @ 50 V
-
-
-40°C ~ 150°C (TJ)
-
-
Surface Mount
Die
Die
eGaN Series
GANFET N-CH 100V 1.7A DIE
EPC
30.600
In Stock
1 : 1,66000 €
Cut Tape (CT)
2.500 : 0,46776 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
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Active
N-Channel
GaNFET (Gallium Nitride)
100 V
1.7A (Ta)
5V
65mOhm @ 1A, 5V
2.5V @ 600µA
0.91 nC @ 5 V
+6V, -4V
90 pF @ 50 V
-
-
-40°C ~ 150°C (TJ)
-
-
Surface Mount
Die
Die
eGaN Series
GANFET N-CH 60V 1.7A DIE
EPC
27.593
In Stock
1 : 1,66000 €
Cut Tape (CT)
2.500 : 0,46776 €
Tape & Reel (TR)
Tape & Reel (TR)
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Active
N-Channel
GaNFET (Gallium Nitride)
60 V
1.7A (Ta)
5V
45mOhm @ 1A, 5V
2.5V @ 800µA
1.15 nC @ 5 V
+6V, -4V
115 pF @ 30 V
-
-
-40°C ~ 150°C (TJ)
-
-
Surface Mount
Die
Die
eGaN Series
GANFET N-CH 40V 10A DIE OUTLINE
EPC
7.901
In Stock
1 : 1,86000 €
Cut Tape (CT)
2.500 : 0,53558 €
Tape & Reel (TR)
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Active
N-Channel
GaNFET (Gallium Nitride)
40 V
10A (Ta)
5V
16mOhm @ 10A, 5V
2.5V @ 2mA
2.5 nC @ 5 V
+6V, -4V
300 pF @ 20 V
-
-
-40°C ~ 150°C (TJ)
-
-
Surface Mount
Die
Die
EPC2057
TRANS GAN 50V .0085OHM 4LGA
EPC
11.216
In Stock
1 : 1,92000 €
Cut Tape (CT)
2.500 : 0,55474 €
Tape & Reel (TR)
-
Tape & Reel (TR)
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Active
N-Channel
GaNFET (Gallium Nitride)
50 V
9.6A (Ta)
5V
8.5mOhm @ 6A, 5V
2.5V @ 2mA
3.5 nC @ 5 V
+6V, -4V
444 pF @ 25 V
-
-
-40°C ~ 150°C (TJ)
-
-
Surface Mount
Die
Die
EPC2052
GANFET N-CH 100V 8.2A DIE
EPC
100.986
In Stock
1 : 1,94000 €
Cut Tape (CT)
2.500 : 0,56430 €
Tape & Reel (TR)
-
Tape & Reel (TR)
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Active
N-Channel
GaNFET (Gallium Nitride)
100 V
8.2A (Ta)
5V
13.5mOhm @ 11A, 5V
2.5V @ 3mA
4.5 nC @ 5 V
+6V, -4V
575 pF @ 50 V
-
-
-40°C ~ 150°C (TJ)
-
-
Surface Mount
Die
Die
eGaN Series
GANFET N-CH 80V 6.8A DIE
EPC
87.034
In Stock
1 : 2,00000 €
Cut Tape (CT)
2.500 : 0,58336 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
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Active
N-Channel
GaNFET (Gallium Nitride)
80 V
6.8A (Ta)
5V
25mOhm @ 6A, 5V
2.5V @ 2mA
2.4 nC @ 5 V
+6V, -4V
210 pF @ 40 V
-
-
-40°C ~ 150°C (TJ)
-
-
Surface Mount
Die
Die
EPC2054
TRANS GAN 200V DIE 43MOHM
EPC
56.669
In Stock
1 : 2,11000 €
Cut Tape (CT)
2.500 : 0,64152 €
Tape & Reel (TR)
Tape & Reel (TR)
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Active
N-Channel
GaNFET (Gallium Nitride)
200 V
3A (Ta)
5V
43mOhm @ 1A, 5V
2.5V @ 1mA
4.3 nC @ 5 V
+6V, -4V
573 pF @ 100 V
-
-
-40°C ~ 150°C (TJ)
-
-
Surface Mount
Die
Die
EPC2252
TRANSGAN 80V.011OHM AECQ101 9BGA
EPC
16.456
In Stock
1 : 2,19000 €
Cut Tape (CT)
2.500 : 0,64948 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
80 V
8.2A (Ta)
-
11mOhm @ 11A, 5V
2.5V @ 2.5mA
4.3 nC @ 5 V
+6V, -4V
576 pF @ 50 V
-
-
-40°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
Die
Die
eGaN Series
GANFET N-CH 100V 4A DIE
EPC
20.081
In Stock
1 : 2,60000 €
Cut Tape (CT)
2.500 : 0,80190 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
100 V
4A (Ta)
5V
160mOhm @ 500mA, 5V
2.5V @ 250µA
0.48 nC @ 5 V
+6V, -4V
55 pF @ 50 V
-
-
-40°C ~ 150°C (TJ)
-
-
Surface Mount
Die
Die
eGaN Series
GANFET N-CH 100V 6A DIE OUTLINE
EPC
11.108
In Stock
1 : 2,60000 €
Cut Tape (CT)
2.500 : 0,80190 €
Tape & Reel (TR)
Tape & Reel (TR)
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N-Channel
GaNFET (Gallium Nitride)
100 V
6A (Ta)
5V
30mOhm @ 6A, 5V
2.5V @ 1.2mA
2.2 nC @ 5 V
+6V, -4V
220 pF @ 50 V
-
-
-40°C ~ 150°C (TJ)
-
-
Surface Mount
Die
Die
EPC22xx
TRANS GAN 200V DIE .022OHM
EPC
23.314
In Stock
1 : 2,70000 €
Cut Tape (CT)
2.500 : 0,84452 €
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
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Active
N-Channel
GaNFET (Gallium Nitride)
200 V
14A (Ta)
5V
22mOhm @ 14A, 5V
2.5V @ 2mA
5.9 nC @ 5 V
+6V, -4V
600 pF @ 100 V
-
-
-40°C ~ 150°C (TJ)
-
-
Surface Mount
Die
Die
EPC2204
TRANS GAN 100V DIE 5.6MOHM
EPC
91.547
In Stock
1 : 2,73000 €
Cut Tape (CT)
2.500 : 0,85465 €
Tape & Reel (TR)
Tape & Reel (TR)
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Active
N-Channel
GaNFET (Gallium Nitride)
100 V
29A (Ta)
5V
6mOhm @ 16A, 5V
2.5V @ 4mA
7.4 nC @ 5 V
+6V, -4V
851 pF @ 50 V
-
-
-40°C ~ 150°C (TJ)
-
-
Surface Mount
Die
Die
EPC2055
GANFET N-CH 40V 29A DIE
EPC
25.622
In Stock
1 : 2,75000 €
Cut Tape (CT)
2.500 : 0,86520 €
Tape & Reel (TR)
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Active
N-Channel
GaNFET (Gallium Nitride)
40 V
29A (Ta)
5V
4.2mOhm @ 15A, 5V
2.5V @ 7mA
8.5 nC @ 5 V
+6V, -4V
1254 pF @ 20 V
-
-
-40°C ~ 150°C (TJ)
-
-
Surface Mount
Die
Die
eGaN Series
GANFET N-CH 100V 18A DIE
EPC
28.293
In Stock
1 : 2,87000 €
Cut Tape (CT)
2.500 : 0,91796 €
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Active
N-Channel
GaNFET (Gallium Nitride)
100 V
18A (Ta)
5V
16mOhm @ 11A, 5V
2.5V @ 3mA
4.5 nC @ 5 V
+6V, -4V
420 pF @ 50 V
-
-
-40°C ~ 150°C (TJ)
-
-
Surface Mount
Die
Die
EPC2204A
TRANS GAN 80V .006OHM AECQ101
EPC
18.264
In Stock
1 : 3,11000 €
Cut Tape (CT)
2.500 : 1,02558 €
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Active
N-Channel
GaNFET (Gallium Nitride)
80 V
29A (Ta)
5V
6mOhm @ 16A, 5V
2.5V @ 4mA
7.4 nC @ 5 V
+6V, -4V
851 pF @ 50 V
-
-
-40°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
Die
Die
EPC2012C
GANFET N-CH 200V 5A DIE OUTLINE
EPC
2.676
In Stock
1 : 3,13000 €
Cut Tape (CT)
2.500 : 1,03402 €
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N-Channel
GaNFET (Gallium Nitride)
200 V
5A (Ta)
5V
100mOhm @ 3A, 5V
2.5V @ 1mA
1.3 nC @ 5 V
+6V, -4V
140 pF @ 100 V
-
-
-40°C ~ 150°C (TJ)
-
-
Surface Mount
Die
Die
GAN7R0-150LBEZ
150 V, 7 MOHM GALLIUM NITRIDE (G
Nexperia USA Inc.
3.787
In Stock
1 : 3,18000 €
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2.500 : 1,05512 €
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GaNFET (Gallium Nitride)
150 V
28A
5V
7mOhm @ 10A, 5V
2.1V @ 5mA
7.6 nC @ 5 V
+6V, -4V
865 pF @ 85 V
-
28W
-40°C ~ 150°C (TJ)
-
-
Surface Mount
3-FCLGA (3.2x2.2)
3-VLGA
EPC2212
GANFET N-CH 100V 18A DIE
EPC
94.590
In Stock
1 : 3,33000 €
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2.500 : 1,11843 €
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N-Channel
GaNFET (Gallium Nitride)
100 V
18A (Ta)
5V
13.5mOhm @ 11A, 5V
2.5V @ 3mA
4 nC @ 5 V
+6V, -4V
407 pF @ 50 V
-
-
-40°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
Die
Die
eGaN Series
GANFET N-CH 40V 4A DIE
EPC
970
In Stock
1 : 3,62000 €
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2.500 : 1,25560 €
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N-Channel
GaNFET (Gallium Nitride)
40 V
4A (Ta)
5V
110mOhm @ 500mA, 5V
2.5V @ 250µA
0.45 nC @ 5 V
+6V, -4V
52 pF @ 20 V
-
-
-40°C ~ 150°C (TJ)
-
-
Surface Mount
Die
Die
Showing
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Single FET, MOSFETs


Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

  • Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
  • Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

  1. High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
  2. Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
  3. High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.