90A (Ta) Single FETs, MOSFETs

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of 27

Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
TJ90S04M3L,LXHQ MOSFET P-CH 40V 90A DPAK Toshiba Semiconductor and Storage	5.293 In Stock	1 : 1,98000 € Cut Tape (CT) 2.000 : 0,56961 € Tape & Reel (TR)	U-MOSVI	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	40 V	90A (Ta)	4.5V, 10V	4.3mOhm @ 45A, 10V	2V @ 1mA	172 nC @ 10 V	+10V, -20V	7700 pF @ 10 V	-	180W (Tc)	175°C	Automotive	AEC-Q101	Surface Mount	DPAK+	TO-252-3, DPAK (2 Leads + Tab), SC-63
EPC2206 GANFET N-CH 80V 90A DIE EPC	406.574 In Stock	1 : 4,48000 € Cut Tape (CT) 500 : 1,77008 € Tape & Reel (TR)	eGaN®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	GaNFET (Gallium Nitride)	80 V	90A (Ta)	5V	2.2mOhm @ 29A, 5V	2.5V @ 13mA	19 nC @ 5 V	+6V, -4V	1940 pF @ 40 V	-	-	-40°C ~ 150°C (TJ)	Automotive	AEC-Q101	Surface Mount	Die	Die
EPC2066 TRANSISTOR GAN 40V .001OHM EPC	4.278 In Stock	1 : 6,30000 € Cut Tape (CT) 1.000 : 2,63781 € Tape & Reel (TR)	eGaN®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	GaNFET (Gallium Nitride)	40 V	90A (Ta)	5V	1.1mOhm @ 50A, 5V	2.5V @ 28mA	33 nC @ 5 V	+6V, -4V	4523 pF @ 20 V	-	-	-40°C ~ 150°C (TJ)	-	-	Surface Mount	Die	Die
EPC2024 GANFET NCH 40V 60A DIE EPC	4.164 In Stock	1 : 7,93000 € Cut Tape (CT) 500 : 3,57688 € Tape & Reel (TR)	eGaN®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	GaNFET (Gallium Nitride)	40 V	90A (Ta)	5V	1.5mOhm @ 37A, 5V	2.5V @ 19mA	-	+6V, -4V	2100 pF @ 20 V	-	-	-40°C ~ 150°C (TJ)	-	-	Surface Mount	Die	Die
EPC2020 GANFET N-CH 60V 90A DIE EPC	4.318 In Stock	1 : 7,99000 € Cut Tape (CT) 500 : 3,60852 € Tape & Reel (TR)	eGaN®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	GaNFET (Gallium Nitride)	60 V	90A (Ta)	5V	2.2mOhm @ 31A, 5V	2.5V @ 16mA	16 nC @ 5 V	+6V, -4V	1780 pF @ 30 V	-	-	-40°C ~ 150°C (TJ)	-	-	Surface Mount	Die	Die
EPC2022 GANFET N-CH 100V 90A DIE EPC	23.024 In Stock	1 : 8,53000 € Cut Tape (CT) 1.000 : 3,93562 € Tape & Reel (TR)	eGaN®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	GaNFET (Gallium Nitride)	100 V	90A (Ta)	5V	3.2mOhm @ 25A, 5V	2.5V @ 12mA	-	+6V, -4V	1500 pF @ 50 V	-	-	-40°C ~ 150°C (TJ)	-	-	Surface Mount	Die	Die
EPC2021 GANFET N-CH 80V 90A DIE EPC	2.575 In Stock	1 : 8,54000 € Cut Tape (CT) 1.000 : 3,18648 € Tape & Reel (TR)	eGaN®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	GaNFET (Gallium Nitride)	80 V	90A (Ta)	5V	2.5mOhm @ 29A, 5V	2.5V @ 14mA	15 nC @ 5 V	+6V, -4V	1650 pF @ 40 V	-	-	-40°C ~ 150°C (TJ)	-	-	Surface Mount	Die	Die
TJ90S04M3L,LQ PB-F POWER MOSFET TRANSISTOR DPA Toshiba Semiconductor and Storage	439 In Stock	1 : 2,48000 € Cut Tape (CT) 2.000 : 0,75125 € Tape & Reel (TR)	U-MOSVI	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	40 V	90A (Ta)	4.5V, 10V	4.3mOhm @ 45A, 10V	2V @ 1mA	172 nC @ 10 V	+10V, -20V	7700 pF @ 10 V	-	180W (Tc)	175°C	Automotive	AEC-Q101	Surface Mount	DPAK+	TO-252-3, DPAK (2 Leads + Tab), SC-63
TK90S06N1L,LXHQ MOSFET N-CH 60V 90A DPAK Toshiba Semiconductor and Storage	6.771 In Stock	1 : 1,91000 € Cut Tape (CT) 2.000 : 0,54698 € Tape & Reel (TR)	U-MOSVIII-H	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	90A (Ta)	4.5V, 10V	3.3mOhm @ 45A, 10V	2.5V @ 500µA	81 nC @ 10 V	±20V	5400 pF @ 10 V	-	157W (Tc)	175°C	Automotive	AEC-Q101	Surface Mount	DPAK+	TO-252-3, DPAK (2 Leads + Tab), SC-63
TK90S06N1L,LQ MOSFET N-CH 60V 90A TO252-3 Toshiba Semiconductor and Storage	4.119 In Stock	1 : 2,49000 € Cut Tape (CT) 2.000 : 0,75442 € Tape & Reel (TR)	U-MOSVIII-H	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	90A (Ta)	4.5V, 10V	3.3mOhm @ 45A, 10V	2.5V @ 500µA	81 nC @ 10 V	±20V	5400 pF @ 10 V	-	157W (Tc)	175°C (TJ)	-	-	Surface Mount	DPAK+	TO-252-3, DPAK (2 Leads + Tab), SC-63
NTP90N02G MOSFET N-CH 24V 90A TO220AB onsemi	0 In Stock 4.645 Marketplace	757 : 0,33764 € Tube	-	Tube Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	24 V	90A (Ta)	4.5V, 10V	5.8mOhm @ 90A, 10V	3V @ 250µA	29 nC @ 4.5 V	±20V	2120 pF @ 20 V	-	85W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220	TO-220-3
NTB90N02T4 MOSFET N-CH 24V 90A D2PAK onsemi	0 In Stock 180.000 Marketplace	699 : 0,36296 € Bulk	-	Tape & Reel (TR) Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	24 V	90A (Ta)	4.5V, 10V	5.8mOhm @ 90A, 10V	3V @ 250µA	29 nC @ 4.5 V	±20V	2120 pF @ 20 V	-	85W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	D2PAK	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
FDU6676AS MOSFET N-CH 30V 90A IPAK Fairchild Semiconductor	1.708 Marketplace	699 : 0,36296 € Tube	PowerTrench®	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	90A (Ta)	4.5V, 10V	5.8mOhm @ 16A, 10V	3V @ 250µA	64 nC @ 10 V	±20V	2470 pF @ 15 V	-	70W (Ta)	-55°C ~ 150°C (TJ)	-	-	Through Hole	IPAK	TO-251-3 Short Leads, IPAK, TO-251AA
NTB90N02T4G MOSFET N-CH 24V 90A D2PAK onsemi	0 In Stock 5.795 Marketplace	356 : 0,70904 € Bulk	-	Tape & Reel (TR) Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	24 V	90A (Ta)	4.5V, 10V	5.8mOhm @ 90A, 10V	3V @ 250µA	29 nC @ 4.5 V	±20V	2120 pF @ 20 V	-	85W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	D2PAK	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
NTP90N02 MOSFET N-CH 24V 90A TO220AB onsemi	0 In Stock 2.880 Marketplace	50 : 0,75960 € Tube 757 : 0,33764 € Tube	-	Tube Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	24 V	90A (Ta)	4.5V, 10V	5.8mOhm @ 90A, 10V	3V @ 250µA	29 nC @ 4.5 V	±20V	2120 pF @ 20 V	-	85W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220	TO-220-3
BUK624R5-30C PFET, 90A I(D), 30V, 0.0075OHM, Nexperia USA Inc.	10.000 Marketplace	245 : 1,02980 € Bulk	-	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	30 V	90A (Ta)	4.5V, 10V	4.5mOhm @ 25A, 10V	2.8V @ 1mA	78 nC @ 10 V	±16V	4707 pF @ 25 V	-	158W (Ta)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63
FDD6676AS MOSFET N-CH 30V 90A TO252 Fairchild Semiconductor	209.310 Marketplace	209 : 1,21550 € Bulk	PowerTrench®	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	90A (Ta)	4.5V, 10V	5.7mOhm @ 16A, 10V	3V @ 1mA	64 nC @ 10 V	±20V	2500 pF @ 15 V	-	70W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252 (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
RJK0702DPN-E0#T2 MOSFET N-CH 75V 90A TO220AB Renesas Electronics Corporation	14.917 Marketplace	100 : 2,53230 € Tube	-	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	75 V	90A (Ta)	-	4.8mOhm @ 45A, 10V	-	89 nC @ 10 V	-	6450 pF @ 10 V	-	150W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3
RJK0702DPP-E0#T2 MOSFET N-CH 75V 90A TO220FP Renesas Electronics Corporation	1.650 Marketplace	100 : 2,53230 € Tube	-	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	75 V	90A (Ta)	-	4.8mOhm @ 45A, 10V	-	89 nC @ 10 V	-	6450 pF @ 10 V	-	30W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220FP	TO-220-3 Full Pack
AM110P06-06B MOSFET P-CH -60V 90A TO-263 Analog Power Inc.	994 Marketplace	1 : 7,92000 € Bulk	-	Bulk	Active	P-Channel	MOSFET (Metal Oxide)	60 V	90A (Ta)	4.5V, 10V	6mOhm @ 90A, 10V	1V @ 250µA	162 nC @ 4.5 V	±20V	18517 pF @ 15 V	-	300W (Ta)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
AM90N15-20P MOSFET N-CH 150V 90A TO-220 Analog Power Inc.	2.300 Marketplace	1 : 2,25000 € Bulk	-	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	150 V	90A (Ta)	5.5V, 10V	24mOhm @ 100A, 10V	1V @ 250µA	123 nC @ 5.5 V	±20V	9857 pF @ 15 V	-	300W (Ta)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220	TO-220-3
XPH2R404PS,L1XHQ 40V UMOS9-H SOP ADVANCE(WF) 2.4M Toshiba Semiconductor and Storage	0 In Stock Check Lead Time	5.000 : 0,35036 € Tape & Reel (TR)	U-MOSIX-H	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	40 V	90A (Ta)	6V, 10V	2.4mOhm @ 45A, 10V	3V @ 300µA	40 nC @ 10 V	+20V, -8V	2500 pF @ 10 V	-	3W (Ta), 93W (Tc)	175°C	Automotive	AEC-Q101	Surface Mount	8-SOP Advance (5x5)	8-PowerVDFN
FDD6676AS MOSFET N-CH 30V 90A TO252 onsemi	0 In Stock	2.500 : 0,71668 € Tape & Reel (TR)	PowerTrench®	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	90A (Ta)	4.5V, 10V	5.7mOhm @ 16A, 10V	3V @ 1mA	64 nC @ 10 V	±20V	2500 pF @ 15 V	-	70W (Ta)	-55°C ~ 155°C (TJ)	-	-	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
NTB90N02 MOSFET N-CH 24V 90A D2PAK onsemi	0 In Stock	Obsolete	-	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	24 V	90A (Ta)	4.5V, 10V	5.8mOhm @ 90A, 10V	3V @ 250µA	29 nC @ 4.5 V	±20V	2120 pF @ 20 V	-	85W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	D2PAK	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
NTB90N02G MOSFET N-CH 24V 90A D2PAK onsemi	0 In Stock	Obsolete	-	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	24 V	90A (Ta)	4.5V, 10V	5.8mOhm @ 90A, 10V	3V @ 250µA	29 nC @ 4.5 V	±20V	2120 pF @ 20 V	-	85W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	D2PAK	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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Single FET, MOSFETs

Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

n-channel MOSFETs: where electrons are the primary carriers.
p-channel MOSFETs: where holes are the primary carriers.

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.

Single FET, MOSFETs

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