7.3A (Tc) Single FETs, MOSFETs

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of 77

Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
FCD620N60ZF MOSFET N-CH 600V 7.3A DPAK onsemi	7.298 In Stock	1 : 2,31000 € Cut Tape (CT) 2.500 : 0,69148 € Tape & Reel (TR)	HiPerFET™, Polar™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	600 V	7.3A (Tc)	10V	620mOhm @ 3.6A, 10V	5V @ 250µA	36 nC @ 10 V	±20V	1135 pF @ 25 V	-	89W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
SPP07N60C3XKSA1 MOSFET N-CH 650V 7.3A TO220-3 Infineon Technologies	500 In Stock	1 : 2,58000 € Tube	CoolMOS™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	7.3A (Tc)	10V	600mOhm @ 4.6A, 10V	3.9V @ 350µA	27 nC @ 10 V	±20V	790 pF @ 25 V	-	83W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO220-3-1	TO-220-3
IPD60R600C6ATMA1 MOSFET N-CH 600V 7.3A TO252-3 Infineon Technologies	6.169 In Stock	1 : 1,55000 € Cut Tape (CT) 2.500 : 0,41718 € Tape & Reel (TR)	CoolMOS™ C6	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	600 V	7.3A (Tc)	10V	600mOhm @ 2.4A, 10V	3.5V @ 200µA	20.5 nC @ 10 V	±20V	440 pF @ 100 V	-	63W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TO252-3	TO-252-3, DPAK (2 Leads + Tab), SC-63
SPA07N60C3XKSA1 MOSFET N-CH 650V 7.3A TO220-FP Infineon Technologies	146 In Stock	1 : 2,44000 € Tube	CoolMOS™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	7.3A (Tc)	10V	600mOhm @ 4.6A, 10V	3.9V @ 250µA	27 nC @ 10 V	±20V	790 pF @ 25 V	-	32W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO220-3-31	TO-220-3 Full Pack
SPD07N60C3ATMA1 LOW POWER_LEGACY Infineon Technologies	2.209 In Stock	1 : 2,58000 € Cut Tape (CT) 2.500 : 0,78716 € Tape & Reel (TR)	CoolMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	600 V	7.3A (Tc)	10V	600mOhm @ 4.6A, 10V	3.9V @ 350µA	27 nC @ 10 V	±20V	790 pF @ 25 V	-	83W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TO252-3-313	TO-252-3, DPAK (2 Leads + Tab), SC-63
IPD60R600P6ATMA1 MOSFET N-CH 600V 7.3A TO252-3 Infineon Technologies	4.776 In Stock	1 : 1,39000 € Cut Tape (CT) 2.500 : 0,36617 € Tape & Reel (TR)	CoolMOS™ P6	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	600 V	7.3A (Tc)	10V	600mOhm @ 2.4A, 10V	4.5V @ 200µA	12 nC @ 10 V	±20V	557 pF @ 100 V	-	63W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TO252-3	TO-252-3, DPAK (2 Leads + Tab), SC-63
PJMF600N65E1_T0_00001 650V SUPER JUNCITON MOSFET Panjit International Inc.	1.950 In Stock	1 : 2,16000 € Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	700 V	7.3A (Tc)	10V	600mOhm @ 2.1A, 10V	4V @ 250µA	17 nC @ 10 V	±30V	554 pF @ 400 V	-	32W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	ITO-220AB-F	TO-220-3 Full Pack, Isolated Tab
IGD70R200D2SAUMA1 HV GAN DISCRETES Infineon Technologies	2.497 In Stock	1 : 1,94000 € Cut Tape (CT) 2.500 : 0,56165 € Tape & Reel (TR)	CoolGaN™ G5	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	GaNFET (Gallium Nitride)	700 V	7.3A (Tc)	-	-	1.6V @ 710µA	-	-10V	91 pF @ 400 V	-	21W (Tc)	-40°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TO252-3-U03	TO-252-3, DPAK (2 Leads + Tab), SC-63
CDMSJ2207.3-650 SL SUPER JUNCTION MOSFETS Central Semiconductor Corp	500 In Stock	1 : 2,89000 € Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	7.3A (Tc)	10V	600mOhm @ 2.1A, 10V	4V @ 250µA	17 nC @ 10 V	30V	554 pF @ 400 V	-	32W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220FP	TO-220-3 Full Pack
FQI7N10LTU MOSFET N-CH 100V 7.3A I2PAK Fairchild Semiconductor	4.000 Marketplace	649 : 0,39730 € Tube	QFET®	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	100 V	7.3A (Tc)	5V, 10V	350mOhm @ 3.65A, 10V	2V @ 250µA	6 nC @ 5 V	±20V	290 pF @ 25 V	-	3.75W (Ta), 40W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-262 (I2PAK)	TO-262-3 Long Leads, I2PAK, TO-262AA
IPP60R600P6XKSA1 MOSFET N-CH 600V 7.3A TO220-3 Infineon Technologies	0 In Stock 111.633 Marketplace	336 : 0,76869 € Bulk	CoolMOS™ P6	Bulk Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	600 V	7.3A (Tc)	10V	600mOhm @ 2.4A, 10V	4.5V @ 200µA	12 nC @ 10 V	±20V	557 pF @ 100 V	-	63W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO220-3	TO-220-3
SPA07N60C2 N-CHANNEL POWER MOSFET Infineon Technologies	1.403 Marketplace	337 : 0,76869 € Bulk	CoolMOS™	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	600 V	7.3A (Tc)	10V	600mOhm @ 4.6A, 10V	5.5V @ 350µA	35 nC @ 10 V	±20V	970 pF @ 25 V	-	32W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO220-3-31	TO-220-3 Full Pack
IPD65R600C6BTMA1 MOSFET N-CH 650V 7.3A TO252-3 Infineon Technologies	0 In Stock 12.500 Marketplace	330 : 0,78597 € Bulk	CoolMOS™	Tape & Reel (TR) Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	650 V	7.3A (Tc)	10V	600mOhm @ 2.1A, 10V	3.5V @ 210µA	23 nC @ 10 V	±20V	440 pF @ 100 V	-	63W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TO252-3	TO-252-3, DPAK (2 Leads + Tab), SC-63
FQP7P20 MOSFET P-CH 200V 7.3A TO220-3 Fairchild Semiconductor	1.518 Marketplace	319 : 0,81188 € Tube	QFET®	Tube	Obsolete	P-Channel	MOSFET (Metal Oxide)	200 V	7.3A (Tc)	10V	690mOhm @ 3.65A, 10V	5V @ 250µA	25 nC @ 10 V	±30V	770 pF @ 25 V	-	90W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220-3	TO-220-3
IPA60R600E6XKSA1 MOSFET N-CH 600V 7.3A TO220-FP Infineon Technologies	0 In Stock 1.105 Marketplace	500 : 0,59880 € Tube 319 : 0,81188 € Bulk	CoolMOS™	Bulk Tube	Last Time Buy	N-Channel	MOSFET (Metal Oxide)	600 V	7.3A (Tc)	10V	600mOhm @ 2.4A, 10V	3.5V @ 200µA	20.5 nC @ 10 V	±20V	440 pF @ 100 V	-	28W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO220-FP	TO-220-3 Full Pack
IPP65R600C6XKSA1 MOSFET N-CH 650V 7.3A TO220-3 Infineon Technologies	0 In Stock 267.850 Marketplace	315 : 0,82051 € Tube	CoolMOS™	Tube Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	650 V	7.3A (Tc)	10V	600mOhm @ 2.1A, 10V	3.5V @ 210µA	23 nC @ 10 V	±20V	440 pF @ 100 V	-	63W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO220-3	TO-220-3
IPP65R600E6XKSA1 MOSFET N-CH 650V 7.3A TO220-3 Infineon Technologies	0 In Stock 24.580 Marketplace	315 : 0,82051 € Bulk	CoolMOS™	Bulk Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	650 V	7.3A (Tc)	10V	600mOhm @ 2.1A, 10V	3.5V @ 210µA	23 nC @ 10 V	±20V	440 pF @ 100 V	-	63W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO220-3	TO-220-3
IPD65R600E6BTMA1 MOSFET N-CH 650V 7.3A TO252-3 Infineon Technologies	0 In Stock 2.500 Marketplace	311 : 0,83778 € Bulk	CoolMOS™	Tape & Reel (TR) Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	650 V	7.3A (Tc)	10V	600mOhm @ 2.1A, 10V	3.5V @ 210µA	23 nC @ 10 V	±20V	440 pF @ 100 V	-	63W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TO252-3	TO-252-3, DPAK (2 Leads + Tab), SC-63
SPD07N60S5BTMA1 N-CHANNEL POWER MOSFET Infineon Technologies	336 Marketplace	295 : 0,88098 € Bulk	CoolMOS™	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	600 V	7.3A (Tc)	10V	600mOhm @ 4.6A, 10V	5.5V @ 350µA	35 nC @ 10 V	±20V	970 pF @ 25 V	-	83W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TO252	TO-252-3, DPAK (2 Leads + Tab), SC-63
SPI07N65C3XKSA1 N-CHANNEL POWER MOSFET Infineon Technologies	23.000 Marketplace	229 : 1,13144 € Bulk	CoolMOS™	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	650 V	7.3A (Tc)	10V	600mOhm @ 4.6A, 10V	3.9V @ 350µA	27 nC @ 10 V	±20V	790 pF @ 25 V	-	83W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO262-3-1	TO-262-3 Long Leads, I2PAK, TO-262AA
SPU07N60C3BKMA1 MOSFET N-CH 650V 7.3A TO251-3 Infineon Technologies	0 In Stock 458 Marketplace	224 : 1,15737 € Bulk	CoolMOS™	Bulk Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	650 V	7.3A (Tc)	10V	600mOhm @ 4.6A, 10V	3.9V @ 350µA	27 nC @ 10 V	±20V	790 pF @ 25 V	-	83W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO251-3-21	TO-251-3 Short Leads, IPAK, TO-251AA
SPI07N60C3XKSA1 MOSFET N-CH 600V 7.3A TO262-3 Infineon Technologies	0 In Stock 89.720 Marketplace	189 : 1,37328 € Bulk	CoolMOS™	Bulk Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	600 V	7.3A (Tc)	10V	600mOhm @ 4.6A, 10V	3.9V @ 350µA	27 nC @ 10 V	±20V	790 pF @ 25 V	-	83W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO262-3-1	TO-262-3 Long Leads, I2PAK, TO-262AA
DMP6110SVT-7 MOSFET P-CH 60V 7.3A TSOT26 Diodes Incorporated	630 In Stock	1 : 0,77000 € Cut Tape (CT) 3.000 : 0,17980 € Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	60 V	7.3A (Tc)	4.5V, 10V	105mOhm @ 4.5A, 10V	3V @ 250µA	17.2 nC @ 10 V	±20V	969 pF @ 30 V	-	1.2W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TSOT-23-6	SOT-23-6 Thin, TSOT-23-6
IPB60R600C6ATMA1 MOSFET N-CH 600V 7.3A D2PAK Infineon Technologies	0 In Stock 51 Marketplace	51 : 5,07863 € Bulk	CoolMOS™ C6	Tape & Reel (TR) Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	600 V	7.3A (Tc)	10V	600mOhm @ 2.4A, 10V	3.5V @ 200µA	20.5 nC @ 10 V	±20V	440 pF @ 100 V	-	63W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IPA65R600E6XKSA1 MOSFET N-CH 650V 7.3A TO220-FP Infineon Technologies	0 In Stock	1 : 1,87000 € Tube	CoolMOS™	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	650 V	7.3A (Tc)	10V	600mOhm @ 2.1A, 10V	3.5V @ 210µA	23 nC @ 10 V	±20V	440 pF @ 100 V	-	28W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO220-FP	TO-220-3 Full Pack

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Single FET, MOSFETs

Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

n-channel MOSFETs: where electrons are the primary carriers.
p-channel MOSFETs: where holes are the primary carriers.

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.

Single FET, MOSFETs

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