53A (Ta) Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
EPC2015C GANFET N-CH 40V 53A DIE EPC	13.286 In Stock	1 : 5,07000 € Cut Tape (CT) 2.500 : 1,96565 € Tape & Reel (TR)	eGaN®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Not For New Designs	N-Channel	GaNFET (Gallium Nitride)	40 V	53A (Ta)	5V	4mOhm @ 33A, 5V	2.5V @ 9mA	8.7 nC @ 5 V	+6V, -4V	1180 pF @ 20 V	-	-	-40°C ~ 150°C (TJ)	-	-	Surface Mount	Die	Die
PSMN018-100ESFQ NEXPERIA PSMN018 - NEXTPOWER 100 NXP Semiconductors	4.976 Marketplace	616 : 0,42106 € Bulk	-	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	100 V	53A (Ta)	7V, 10V	18mOhm @ 15A, 10V	4V @ 1mA	21.4 nC @ 10 V	±20V	1482 pF @ 50 V	-	111W (Ta)	-55°C ~ 175°C (TJ)	-	-	Through Hole	I2PAK	TO-262-3 Long Leads, I2PAK, TO-262AA
AM60N04-12D MOSFET N-CH 40V 53A TO-252 Analog Power Inc.	5.700 Marketplace	1 : 0,64000 € Bulk	-	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	40 V	53A (Ta)	4.5V, 10V	12mOhm @ 20A, 10V	1V @ 250µA (Min)	19 nC @ 4.5 V	±20V	1826 pF @ 15 V	-	50W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252 (DPAK)	TO-252-3, DPak (2 Leads + Tab), SC-63

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.