48A (Ta) Single FETs, MOSFETs

Results: 21
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
EPC2306
TRANS GAN 100V .0038OHM 3X5PQFN
EPC
21.747
In Stock
1 : 4,30000 €
Cut Tape (CT)
3.000 : 1,58269 €
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
100 V
48A (Ta)
5V
3.8mOhm @ 25A, 5V
2.5V @ 7mA
16.3 nC @ 5 V
+6V, -4V
2366 pF @ 50 V
-
-
-40°C ~ 150°C (TJ)
-
-
Surface Mount
7-QFN (3x5)
7-PowerWQFN
EPC2307
TRANS GAN 200V .010OHM 7QFN
EPC
8.006
In Stock
1 : 4,30000 €
Cut Tape (CT)
3.000 : 1,58269 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
200 V
48A (Ta)
5V
10mOhm @ 16A, 5V
2.5V @ 4mA
10.6 nC @ 5 V
+6V, -4V
1401 pF @ 100 V
-
-
-40°C ~ 150°C (TJ)
-
-
Surface Mount
7-QFN (3x5)
7-PowerWQFN
EPC2308
TRANS GAN 150V .006OHM 7QFN
EPC
7.690
In Stock
1 : 4,41000 €
Cut Tape (CT)
3.000 : 1,63544 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
150 V
48A (Ta)
5V
6mOhm @ 15A, 5V
2.5V @ 5mA
13.8 nC @ 5 V
+6V, -4V
2103 pF @ 75 V
-
-
-40°C ~ 150°C (TJ)
-
-
Surface Mount
7-QFN (3x5)
7-PowerWQFN
EPC2053
GANFET N-CH 100V 48A DIE
EPC
7.205
In Stock
1 : 6,20000 €
Cut Tape (CT)
2.500 : 2,58506 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
100 V
48A (Ta)
5V
3.8mOhm @ 25A, 5V
2.5V @ 9mA
14.8 nC @ 5 V
+6V, -4V
1895 pF @ 50 V
-
-
-40°C ~ 150°C (TJ)
-
-
Surface Mount
Die
Die
eGaN Series
GANFET N-CH 200V 48A DIE
EPC
10.507
In Stock
1 : 8,74000 €
Cut Tape (CT)
500 : 4,06224 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
200 V
48A (Ta)
5V
8mOhm @ 20A, 5V
2.5V @ 7mA
11 nC @ 5 V
+6V, -4V
1140 pF @ 100 V
-
-
-40°C ~ 150°C (TJ)
-
-
Surface Mount
Die
Die
eGaN Series
GANFET N-CH 150V 48A DIE
EPC
1.960
In Stock
1 : 9,20000 €
Cut Tape (CT)
500 : 4,34712 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
150 V
48A (Ta)
-
7mOhm @ 25A, 5V
2.5V @ 9mA
10 nC @ 5 V
-
1140 pF @ 75 V
-
-
-
-
-
Surface Mount
Die
Die
EPC2234
TRANS GAN AEC 160V .008OHM 24BGA
EPC
4.327
In Stock
1 : 10,80000 €
Cut Tape (CT)
500 : 5,36004 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
160 V
48A (Ta)
5V
8mOhm @ 20A, 5V
2.5V @ 7mA
13.8 nC @ 5 V
+5.5V, -4V
1386 pF @ 100 V
-
-
-40°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
24-BGA (4.6x2.6)
24-VFBGA
EPC2306ENGRT
TRANS GAN 100V .0038OHM3X5MM QFN
EPC
1.940
In Stock
1 : 5,33000 €
Cut Tape (CT)
3.000 : 2,11025 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
100 V
48A (Ta)
5V
3.8mOhm @ 25A, 5V
2.5V @ 7mA
16.3 nC @ 5 V
+6V, -4V
2366 pF @ 50 V
-
-
-40°C ~ 150°C (TJ)
-
-
Surface Mount
7-QFN (3x5)
7-PowerWQFN
EPC2307ENGRT
TRANS GAN 200V .010OHM 7QFN
EPC
18.019
In Stock
1 : 6,30000 €
Cut Tape (CT)
3.000 : 2,63781 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
200 V
48A (Ta)
5V
10mOhm @ 16A, 10V
2.5V @ 4mA
10.6 nC @ 5 V
+6V, -4V
1401 pF @ 100 V
-
-
-40°C ~ 150°C (TJ)
-
-
Surface Mount
7-QFN (3x5)
7-PowerWQFN
eGaN Series
GANFET N-CH 100V 48A DIE
EPC
4.931
In Stock
1 : 7,24000 €
Cut Tape (CT)
500 : 3,17592 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
100 V
48A (Ta)
5V
4mOhm @ 30A, 5V
2.5V @ 11mA
15 nC @ 5 V
+6V, -4V
1530 pF @ 50 V
-
-
-40°C ~ 150°C (TJ)
-
-
Surface Mount
Die
Die
eGaN Series
GANFET N-CH 80V 48A DIE
EPC
13.284
In Stock
1 : 8,35000 €
Cut Tape (CT)
500 : 3,83010 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
80 V
48A (Ta)
5V
3.2mOhm @ 30A, 5V
2.5V @ 12mA
13 nC @ 5 V
+6V, -4V
1410 pF @ 40 V
-
-
-40°C ~ 150°C (TJ)
-
-
Surface Mount
Die
Die
IRG4RC10UTRPBF
MOSFET N-CH 30V 48A TO263AB
Fairchild Semiconductor
20.289
Marketplace
387 : 0,65840 €
Bulk
Bulk
Obsolete
N-Channel
MOSFET (Metal Oxide)
30 V
48A (Ta)
4.5V, 10V
13mOhm @ 26A, 10V
3V @ 250µA
18 nC @ 5 V
±20V
1250 pF @ 15 V
-
52W (Tc)
-65°C ~ 175°C (TJ)
-
-
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
INFINFIPAN60R360PFD7SXKSA1
MOSFET N-CH 30V 48A TO220-3
Fairchild Semiconductor
61.536
Marketplace
356 : 0,70904 €
Tube
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
30 V
48A (Ta)
4.5V, 10V
13mOhm @ 26A, 10V
3V @ 250µA
18 nC @ 5 V
±20V
1250 pF @ 15 V
-
52W (Tc)
-65°C ~ 175°C (TJ)
-
-
Through Hole
TO-220-3
TO-220-3
IRG4RC10UTRPBF
N-CHANNEL POWER MOSFET
Fairchild Semiconductor
172.284
Marketplace
180 : 1,40122 €
Bulk
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
30 V
48A (Ta)
4.5V, 10V
12mOhm @ 24A, 10V
3V @ 250µA
18 nC @ 5 V
±20V
1250 pF @ 15 V
-
52W (Tc)
-65°C ~ 175°C (TJ)
-
-
Surface Mount
TO-263AB
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
INFINFIPAN60R360PFD7SXKSA1
MOSFET N-CH 30V 48A TO220-3
Fairchild Semiconductor
106.637
Marketplace
179 : 1,41810 €
Tube
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
30 V
48A (Ta)
4.5V, 10V
12mOhm @ 24A, 10V
3V @ 250µA
18 nC @ 5 V
±20V
1250 pF @ 15 V
-
52W (Tc)
-65°C ~ 175°C (TJ)
-
-
Through Hole
TO-220-3
TO-220-3
TO-220-3
MOSFET N-CH 30V 48A TO220-3
onsemi
0
In Stock
400 : 1,23448 €
Tube
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
30 V
48A (Ta)
4.5V, 10V
12mOhm @ 24A, 10V
3V @ 250µA
18 nC @ 5 V
±20V
1250 pF @ 15 V
-
52W (Tc)
-65°C ~ 175°C (TJ)
-
-
Through Hole
TO-220-3
TO-220-3
eGaN Series
GANFET N-CH 200V 48A DIE
EPC
0
In Stock
1 : 6,61000 €
Cut Tape (CT)
500 : 3,41860 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Obsolete
N-Channel
GaNFET (Gallium Nitride)
200 V
48A (Ta)
5V
10mOhm @ 20A, 5V
2.5V @ 7mA
8.8 nC @ 5 V
+6V, -4V
950 pF @ 100 V
-
-
-40°C ~ 150°C (TJ)
-
-
Surface Mount
Die
Die
TO-220-3
MOSFET N-CH 30V 48A TO220-3
onsemi
0
In Stock
Obsolete
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
30 V
48A (Ta)
4.5V, 10V
13mOhm @ 26A, 10V
3V @ 250µA
18 nC @ 5 V
±20V
1250 pF @ 15 V
-
52W (Tc)
-65°C ~ 175°C (TJ)
-
-
Through Hole
TO-220-3
TO-220-3
TO-263
MOSFET N-CH 30V 48A TO263AB
onsemi
0
In Stock
Obsolete
Tape & Reel (TR)
Obsolete
N-Channel
MOSFET (Metal Oxide)
30 V
48A (Ta)
4.5V, 10V
13mOhm @ 26A, 10V
3V @ 250µA
18 nC @ 5 V
±20V
1250 pF @ 15 V
-
52W (Tc)
-65°C ~ 175°C (TJ)
-
-
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
0
In Stock
Obsolete
Tape & Reel (TR)
Obsolete
N-Channel
MOSFET (Metal Oxide)
30 V
48A (Ta)
4.5V, 10V
2.2mOhm @ 24A, 10V
2.3V @ 1mA
74 nC @ 10 V
±20V
6200 pF @ 10 V
-
1.6W (Ta), 63W (Tc)
150°C (TJ)
-
-
Surface Mount
8-SOP Advance (5x5)
8-PowerVDFN
MFT6N48T252
MOSFET N 60V 48A 188W TO-252
Meritek
0
Marketplace
Unavailable
Unavailable in your selected currency
-
Strip
Active
N-Channel
MOSFET (Metal Oxide)
60 V
48A (Ta)
-
-
-
21 nC @ 50 V
-
1290 pF @ 50 V
-
-
-
-
-
-
-
-
Showing
of 21

Single FET, MOSFETs


Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

  • Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
  • Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

  1. High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
  2. Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
  3. High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.