4.2A (Ta) Single FETs, MOSFETs

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of 67

Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
DMG2305UX-13 MOSFET P-CH 20V 4.2A SOT23 Diodes Incorporated	194.542 In Stock	1 : 0,26000 € Cut Tape (CT) 10.000 : 0,04331 € Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	20 V	4.2A (Ta)	1.8V, 4.5V	52mOhm @ 4.2A, 4.5V	900mV @ 250µA	10.2 nC @ 4.5 V	±8V	808 pF @ 15 V	-	1.4W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
DMG2305UX-7 MOSFET P-CH 20V 4.2A SOT23 Diodes Incorporated	63.748 In Stock	1 : 0,26000 € Cut Tape (CT) 3.000 : 0,05180 € Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	20 V	4.2A (Ta)	1.8V, 4.5V	52mOhm @ 4.2A, 4.5V	900mV @ 250µA	10.2 nC @ 4.5 V	±8V	808 pF @ 15 V	-	1.4W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
DMG3414U-7 MOSFET N-CH 20V 4.2A SOT23-3 Diodes Incorporated	50.022 In Stock	1 : 0,63000 € Cut Tape (CT) 3.000 : 0,14353 € Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	20 V	4.2A (Ta)	1.8V, 4.5V	25mOhm @ 8.2A, 4.5V	900mV @ 250µA	9.6 nC @ 4.5 V	±8V	829.9 pF @ 10 V	-	780mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
AO6420 MOSFET N-CH 60V 4.2A 6TSOP Alpha & Omega Semiconductor Inc.	129.064 In Stock	1 : 0,66000 € Cut Tape (CT) 3.000 : 0,15604 € Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	4.2A (Ta)	4.5V, 10V	60mOhm @ 4.2A, 10V	3V @ 250µA	11.5 nC @ 10 V	±20V	540 pF @ 30 V	-	2W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	6-TSOP	SC-74, SOT-457
DMN2075U-7 MOSFET N-CH 20V 4.2A SOT23-3 Diodes Incorporated	61.023 In Stock	1 : 0,30000 € Cut Tape (CT) 3.000 : 0,06153 € Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	20 V	4.2A (Ta)	2.5V, 4.5V	38mOhm @ 3.6A, 4.5V	1V @ 250µA	7 nC @ 4.5 V	±8V	594.3 pF @ 10 V	-	800mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
DMG3404L-7 MOSFET N-CH 30V 4.2A SOT23 Diodes Incorporated	12.104 In Stock	1 : 0,39000 € Cut Tape (CT) 3.000 : 0,08309 € Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	4.2A (Ta)	4.5V, 10V	25mOhm @ 5.8A, 10V	2V @ 250µA	13.2 nC @ 10 V	±20V	641 pF @ 15 V	-	780mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
DMG2302U-7 MOSFET N-CH 20V 4.2A SOT23-3 Diodes Incorporated	23.646 In Stock	1 : 0,44000 € Cut Tape (CT) 3.000 : 0,09464 € Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	20 V	4.2A (Ta)	2.5V, 4.5V	90mOhm @ 3.6A, 4.5V	1V @ 50µA	7 nC @ 4.5 V	±8V	594.3 pF @ 10 V	-	800mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
DMG3414UQ-7 MOSFET N-CH 20V 4.2A SOT23-3 Diodes Incorporated	1.885 In Stock	1 : 0,49000 € Cut Tape (CT) 3.000 : 0,10723 € Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	20 V	4.2A (Ta)	1.8V, 4.5V	25mOhm @ 8.2A, 4.5V	900mV @ 250µA	9.6 nC @ 4.5 V	±8V	829.9 pF @ 10 V	-	780mW	-55°C ~ 150°C (TJ)	Automotive	AEC-Q101	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
SSM3K123TU,LF MOSFET N-CH 20V 4.2A UFM Toshiba Semiconductor and Storage	11.339 In Stock	1 : 0,52000 € Cut Tape (CT) 3.000 : 0,11489 € Tape & Reel (TR)	U-MOSIII	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	20 V	4.2A (Ta)	1.5V, 4V	28mOhm @ 3A, 4V	1V @ 1mA	13.6 nC @ 4 V	±10V	1010 pF @ 10 V	-	500mW (Ta)	150°C (TJ)	-	-	Surface Mount	UFM	3-SMD, Flat Leads
DMP2043UCA3-7 MOSFET P-CH 20V 4.2A X2DSN1010-3 Diodes Incorporated	6.328 In Stock	1 : 0,60000 € Cut Tape (CT) 5.000 : 0,12672 € Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	20 V	4.2A (Ta)	2.5V, 4.5V	45mOhm @ 1A, 4.5V	1.2V @ 250µA	1.9 nC @ 4.5 V	-20V	425 pF @ 10 V	-	650mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	X2-DSN1010-3	3-XFDFN
DMP6110SFDF-13 MOSFET P-CH 60V 4.2A 6UDFN Diodes Incorporated	4.574 In Stock	1 : 0,63000 € Cut Tape (CT) 10.000 : 0,12381 € Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	60 V	4.2A (Ta)	4.5V, 10V	110mOhm @ 4.5A, 10V	3V @ 250µA	17.2 nC @ 10 V	±20V	969 pF @ 30 V	-	1.97W (Ta)	-55°C ~ 150°C (TJ)	Automotive	AEC-Q101	Surface Mount	U-DFN2020-6 (Type F)	6-UDFN Exposed Pad
SSM6K403TU,LF MOSFET N-CH 20V 4.2A UF6 Toshiba Semiconductor and Storage	2.869 In Stock	1 : 0,52000 € Cut Tape (CT) 3.000 : 0,11489 € Tape & Reel (TR)	U-MOSIII	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	20 V	4.2A (Ta)	1.5V, 4V	28mOhm @ 3A, 4V	1V @ 1mA	16.8 nC @ 4 V	±10V	1050 pF @ 10 V	-	500mW (Ta)	150°C (TJ)	-	-	Surface Mount	UF6	6-SMD, Flat Leads
DMP2033UVT-7 MOSFET P-CH 20V 4.2A TSOT-26 Diodes Incorporated	2.090 In Stock 69.000 Factory	1 : 0,57000 € Cut Tape (CT) 3.000 : 0,12866 € Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	20 V	4.2A (Ta)	1.8V, 4.5V	65mOhm @ 4.2A, 4.5V	900mV @ 250µA	10.4 nC @ 4.5 V	±8V	845 pF @ 15 V	-	1.2W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TSOT-26	SOT-23-6 Thin, TSOT-23-6
ZXMN7A11KTC MOSFET N-CH 70V 4.2A TO252-3 Diodes Incorporated	3.371 In Stock	1 : 1,16000 € Cut Tape (CT) 2.500 : 0,29772 € Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	70 V	4.2A (Ta)	4.5V, 10V	130mOhm @ 4.4A, 10V	1V @ 250µA	7.4 nC @ 10 V	±20V	298 pF @ 40 V	-	2.11W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252-3	TO-252-3, DPAK (2 Leads + Tab), SC-63
DMP2305UVT-7 MOSFET P-CH 20V 4.2A TSOT26 Diodes Incorporated	1.645 In Stock 24.000 Factory	1 : 0,51000 € Cut Tape (CT) 3.000 : 0,11348 € Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	20 V	4.2A (Ta)	1.8V, 4.5V	60mOhm @ 4.2A, 4.5V	900mV @ 250µA	7.6 nC @ 4.5 V	±8V	727 pF @ 20 V	-	1.4W	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TSOT-26	SOT-23-6 Thin, TSOT-23-6
DMG2302UQ-13 MOSFET N-CH 20V 4.2A SOT23-3 Diodes Incorporated	14.992 In Stock	1 : 0,57000 € Cut Tape (CT) 10.000 : 0,11011 € Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	20 V	4.2A (Ta)	2.5V, 4.5V	90mOhm @ 3.6A, 4.5V	1V @ 50µA	7 nC @ 4.5 V	±8V	594.3 pF @ 10 V	-	800mW (Ta)	-55°C ~ 150°C (TJ)	Automotive	AEC-Q101	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
DMG2302UQ-7 MOSFET N-CH 20V 4.2A SOT23-3 Diodes Incorporated	1.810 In Stock	1 : 0,57000 € Cut Tape (CT) 3.000 : 0,12809 € Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	20 V	4.2A (Ta)	2.5V, 4.5V	90mOhm @ 3.6A, 4.5V	1V @ 50µA	7 nC @ 4.5 V	±8V	594.3 pF @ 10 V	-	800mW (Ta)	-55°C ~ 150°C (TJ)	Automotive	AEC-Q101	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
DMN10H099SFG-7 MOSFET N-CH 100V 4.2A PWRDI3333 Diodes Incorporated	1.611 In Stock 10.000 Factory	1 : 0,91000 € Cut Tape (CT) 2.000 : 0,22875 € Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	4.2A (Ta)	6V, 10V	80mOhm @ 3.3A, 10V	3V @ 250µA	25.2 nC @ 10 V	±20V	1172 pF @ 50 V	-	980mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	POWERDI3333-8	8-PowerVDFN
NVGS3130NT1G MOSFET N-CH 20V 4.2A 6TSOP onsemi	2.881 In Stock	1 : 1,46000 € Cut Tape (CT) 3.000 : 0,39525 € Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	20 V	4.2A (Ta)	2.5V, 4.5V	24mOhm @ 5.6A, 4.5V	1.4V @ 250µA	20.3 nC @ 4.5 V	±8V	935 pF @ 16 V	-	600mW (Ta)	-55°C ~ 150°C (TJ)	Automotive	AEC-Q101	Surface Mount	6-TSOP	SOT-23-6 Thin, TSOT-23-6
ZXMN10A25KTC MOSFET N-CH 100V 4.2A TO252-3 Diodes Incorporated	4.509 In Stock	1 : 1,64000 € Cut Tape (CT) 2.500 : 0,44766 € Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	4.2A (Ta)	6V, 10V	125mOhm @ 2.9A, 10V	4V @ 250µA	17.16 nC @ 10 V	±20V	859 pF @ 50 V	-	2.11W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252-3	TO-252-3, DPAK (2 Leads + Tab), SC-63
PJQ4463AP_R2_00001 60V P-CHANNEL ENHANCEMENT MODE M Panjit International Inc.	9.945 In Stock	1 : 0,64000 € Cut Tape (CT) 5.000 : 0,14024 € Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	60 V	4.2A (Ta)	4.5V, 10V	68mOhm @ 6A, 10V	2.5V @ 250µA	17 nC @ 10 V	±20V	879 pF @ 30 V	-	2.1W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	DFN3333-8	8-PowerVDFN
PJQ4463AP-AU_R2_000A1 60V P-CHANNEL ENHANCEMENT MODE M Panjit International Inc.	11.962 In Stock	1 : 0,70000 € Cut Tape (CT) 5.000 : 0,15612 € Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	60 V	4.2A (Ta)	4.5V, 10V	68mOhm @ 6A, 10V	2.5V @ 250µA	17 nC @ 10 V	±20V	879 pF @ 30 V	-	2.1W (Ta)	-55°C ~ 150°C (TJ)	Automotive	AEC-Q101	Surface Mount	DFN3333-8	8-PowerVDFN
AO4486 MOSFET N-CH 100V 4.2A 8SOIC Alpha & Omega Semiconductor Inc.	7.079 In Stock	1 : 1,18000 € Cut Tape (CT) 3.000 : 0,30724 € Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	100 V	4.2A (Ta)	4.5V, 10V	79mOhm @ 3A, 10V	2.7V @ 250µA	20 nC @ 10 V	±20V	942 pF @ 50 V	-	3.1W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
AO3414A 20V 4.2A 400MW 35MR@4.5V,3.6A 1. UMW	6.012 In Stock	1 : 0,15000 € Cut Tape (CT) 3.000 : 0,05726 € Tape & Reel (TR)	UMW	Tape & Reel (TR) Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	20 V	4.2A (Ta)	1.8V, 4.5V	26mOhm @ 4.2A, 4.5V	1V @ 250µA	6.2 nC @ 4.5 V	±8V	436 pF @ 10 V	-	1.4W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
AO3407A 30V 4.1A 52MR@10V,4.1A 1.4W 3V@2 UMW	2.890 In Stock	1 : 0,17000 € Cut Tape (CT) 3.000 : 0,06638 € Tape & Reel (TR)	UMW	Cut Tape (CT)	Active	P-Channel	MOSFET (Metal Oxide)	30 V	4.2A (Ta)	4.5V, 10V	52mOhm @ 4.1A, 10V	3V @ 250µA	14.3 nC @ 4.5 V	±20V	700 pF @ 15 V	-	1.4W (Ta)	150°C (TJ)	-	-	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3

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Single FET, MOSFETs

Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

n-channel MOSFETs: where electrons are the primary carriers.
p-channel MOSFETs: where holes are the primary carriers.

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.

Single FET, MOSFETs

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