Single FETs, MOSFETs

Results: 18
Drain to Source Voltage (Vdss)
25 V30 V34 V40 V55 V60 V75 V80 V85 V100 V
Current - Continuous Drain (Id) @ 25°C
190mA (Ta)13A (Ta), 53A (Tc)17A (Ta), 71A (Tc)17A (Ta), 85A (Tc)24A (Ta), 100A (Tc)30A (Tc)39A (Ta), 180A (Tc)45A (Tc)50A (Tc)70A (Tc)80A (Tc)95A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V6V, 10V10V
Rds On (Max) @ Id, Vgs
1.2mOhm @ 30A, 10V2.7mOhm @ 55A, 10V2.9mOhm @ 50A, 10V4.5mOhm @ 30A, 10V5.1mOhm @ 30A, 10V5.2mOhm @ 80A, 10V5.3mOhm @ 30A, 10V5.7mOhm @ 30A, 10V6.4mOhm @ 95A, 10V6.5mOhm @ 70A, 10V7mOhm @ 73A, 10V7.5mOhm @ 50A, 10V8.3mOhm @ 20A, 10V9.1mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
2V @ 100µA2V @ 250µA2V @ 40µA2V @ 50µA2V @ 80µA2.2V @ 11µA2.2V @ 250µA2.3V @ 13µA3.5V @ 33µA3.5V @ 73µA3.8V @ 91µA4V @ 125µA4V @ 130µA4V @ 26µA
Gate Charge (Qg) (Max) @ Vgs
0.6 nC @ 10 V10 nC @ 4.5 V18 nC @ 10 V22 nC @ 5 V25 nC @ 5 V25 nC @ 10 V29 nC @ 10 V32 nC @ 10 V34 nC @ 10 V35 nC @ 10 V41 nC @ 5 V56 nC @ 10 V57 nC @ 5 V68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
20.9 pF @ 25 V1600 pF @ 30 V1730 pF @ 40 V1800 pF @ 15 V2350 pF @ 25 V2550 pF @ 25 V2653 pF @ 15 V2700 pF @ 15 V3110 pF @ 15 V3140 pF @ 25 V3840 pF @ 40 V4750 pF @ 37.5 V5090 pF @ 15 V6690 pF @ 40 V
Power Dissipation (Max)
500mW (Ta)2.2W (Ta), 36W (Tc)2.3W (Ta), 42W (Tc)2.5W (Ta), 50W (Tc)2.8W (Ta), 78W (Tc)2.8W (Ta), 89W (Tc)36W (Tc)58W (Tc)68W (Tc)79W (Tc)83W (Tc)94W (Tc)136W (Tc)150W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-40°C ~ 150°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
MG-WDSON-2, CanPAK M™PG-SOT23-3-5PG-TDSON-8-1PG-TO220-3PG-TO220-3-1PG-TO252-3PG-TO252-3-11PG-TO252-3-23PG-TO262-3PG-TO263-3-2
Package / Case
3-WDSON8-PowerTDFNTO-220-3TO-236-3, SC-59, SOT-23-3TO-252-3, DPAK (2 Leads + Tab), SC-63TO-262-3 Long Leads, I2PAK, TO-262AATO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
INFINFBF799
BSS119NH7796
SMALL SIGNAL N-CHANNEL MOSFET
Infineon Technologies
10.000
Marketplace
6.918 : 0,03566 €
Bulk
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
100 V
190mA (Ta)
4.5V, 10V
6Ohm @ 190mA, 10V
2.3V @ 13µA
0.6 nC @ 10 V
±20V
20.9 pF @ 25 V
-
500mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
PG-SOT23-3-5
TO-236-3, SC-59, SOT-23-3
INFINFBF799
BSS119NH7978XTSA1
SMALL SIGNAL N-CHANNEL MOSFET
Infineon Technologies
15.000
Marketplace
2.597 : 0,10699 €
Bulk
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
100 V
190mA (Ta)
4.5V, 10V
6Ohm @ 190mA, 10V
2.3V @ 13µA
0.6 nC @ 10 V
±20V
20.9 pF @ 25 V
-
500mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
PG-SOT23-3-5
TO-236-3, SC-59, SOT-23-3
TEXTISCSD86336Q3DT
BSC884N03MSG
N-CHANNEL POWER MOSFET
Infineon Technologies
9.149
Marketplace
799 : 0,33881 €
Bulk
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
34 V
17A (Ta), 85A (Tc)
4.5V, 10V
4.5mOhm @ 30A, 10V
2V @ 250µA
34 nC @ 10 V
±20V
2700 pF @ 15 V
-
2.5W (Ta), 50W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8-1
8-PowerTDFN
N-CHANNEL POWER MOSFET
BSF083N03LQG
N-CHANNEL POWER MOSFET
Infineon Technologies
6.000
Marketplace
717 : 0,37448 €
Bulk
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
30 V
13A (Ta), 53A (Tc)
4.5V, 10V
8.3mOhm @ 20A, 10V
2.2V @ 250µA
18 nC @ 10 V
±20V
1800 pF @ 15 V
-
2.2W (Ta), 36W (Tc)
-40°C ~ 150°C (TJ)
Surface Mount
MG-WDSON-2, CanPAK M™
3-WDSON
MC78M05BTG
IPP230N06L3G
N-CHANNEL POWER MOSFET
Infineon Technologies
9.620
Marketplace
693 : 0,38339 €
Bulk
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
60 V
30A (Tc)
4.5V, 10V
23mOhm @ 30A, 10V
2.2V @ 11µA
10 nC @ 4.5 V
±20V
1600 pF @ 30 V
-
36W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3
TO-220-3
N-CHANNEL POWER MOSFET
BSB053N03LPG
N-CHANNEL POWER MOSFET
Infineon Technologies
5.000
Marketplace
693 : 0,38339 €
Bulk
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
30 V
17A (Ta), 71A (Tc)
4.5V, 10V
5.3mOhm @ 30A, 10V
2.2V @ 250µA
29 nC @ 10 V
±20V
2700 pF @ 15 V
-
2.3W (Ta), 42W (Tc)
-40°C ~ 150°C (TJ)
Surface Mount
MG-WDSON-2, CanPAK M™
3-WDSON
IRG4RC10UTRPBF
IPD06N03LAG
N-CHANNEL POWER MOSFET
Infineon Technologies
25.570
Marketplace
611 : 0,43689 €
Bulk
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
25 V
50A (Tc)
4.5V, 10V
5.7mOhm @ 30A, 10V
2V @ 40µA
22 nC @ 5 V
±20V
2653 pF @ 15 V
-
83W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO252-3-11
TO-252-3, DPAK (2 Leads + Tab), SC-63
MJD32CTF-ON
IPF05N03LAG
N-CHANNEL POWER MOSFET
Infineon Technologies
22.500
Marketplace
547 : 0,49038 €
Bulk
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
25 V
50A (Tc)
4.5V, 10V
5.1mOhm @ 30A, 10V
2V @ 50µA
25 nC @ 5 V
±20V
3110 pF @ 15 V
-
94W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO252-3-23
TO-252-3, DPAK (2 Leads + Tab), SC-63
SGP15N60XKSA1
IPP139N08N3G
N-CHANNEL POWER MOSFET
Infineon Technologies
11.261
Marketplace
495 : 0,54388 €
Bulk
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
80 V
45A (Tc)
6V, 10V
13.9mOhm @ 45A, 10V
3.5V @ 33µA
25 nC @ 10 V
±20V
1730 pF @ 40 V
-
79W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3
TO-220-3
TEXTISCSD86336Q3DT
BSC029N025SG
N-CHANNEL POWER MOSFET
Infineon Technologies
4.999
Marketplace
371 : 0,72218 €
Bulk
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
25 V
24A (Ta), 100A (Tc)
4.5V, 10V
2.9mOhm @ 50A, 10V
2V @ 80µA
41 nC @ 5 V
±20V
5090 pF @ 15 V
-
2.8W (Ta), 78W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8-1
8-PowerTDFN
IRG4RC10UTRPBF
IPB03N03LAG
N-CHANNEL POWER MOSFET
Infineon Technologies
703
Marketplace
297 : 0,90051 €
Bulk
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
25 V
80A (Tc)
4.5V, 10V
2.7mOhm @ 55A, 10V
2V @ 100µA
57 nC @ 5 V
±20V
7027 pF @ 15 V
-
150W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-3-2
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
5.508
Marketplace
278 : 0,96291 €
Bulk
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
30 V
39A (Ta), 180A (Tc)
4.5V, 10V
1.2mOhm @ 30A, 10V
2.2V @ 250µA
169 nC @ 10 V
±20V
16900 pF @ 15 V
-
2.8W (Ta), 89W (Tc)
-40°C ~ 150°C (TJ)
Surface Mount
MG-WDSON-2, CanPAK M™
3-WDSON
ONSONSNTSB30100CTG
IPD50N04S308ATMA1
IPD50N04 - 20V-40V N-CHANNEL AUT
Infineon Technologies
125.808
Marketplace
434 : 0,61521 €
Bulk
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
40 V
50A (Tc)
10V
7.5mOhm @ 50A, 10V
4V @ 40µA
35 nC @ 10 V
±20V
2350 pF @ 25 V
-
68W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO252-3
TO-252-3, DPAK (2 Leads + Tab), SC-63
49.890
Marketplace
304 : 0,88270 €
Bulk
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
40 V
70A (Tc)
10V
6.5mOhm @ 70A, 10V
4V @ 26µA
32 nC @ 10 V
±20V
2550 pF @ 25 V
-
58W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3-1
TO-220-3
MC78M05BTG
SPP80N06S209
N-CHANNEL POWER MOSFET
Infineon Technologies
894
Marketplace
400 : 0,66870 €
Bulk
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
55 V
80A (Tc)
10V
9.1mOhm @ 50A, 10V
4V @ 125µA
80 nC @ 10 V
±20V
3140 pF @ 25 V
-
190W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3-1
TO-220-3
MC78M05BTG
IPP070N08N3G
N-CHANNEL POWER MOSFET
Infineon Technologies
609
Marketplace
400 : 0,66870 €
Bulk
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
80 V
80A (Tc)
6V, 10V
7mOhm @ 73A, 10V
3.5V @ 73µA
56 nC @ 10 V
±20V
3840 pF @ 40 V
-
136W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3
TO-220-3
ISL9N302AS3
IPI052NE7N3G
N-CHANNEL POWER MOSFET
Infineon Technologies
396
Marketplace
396 : 0,73111 €
Bulk
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
75 V
80A (Tc)
10V
5.2mOhm @ 80A, 10V
3.8V @ 91µA
68 nC @ 10 V
±20V
4750 pF @ 37.5 V
-
150W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
PG-TO262-3
TO-262-3 Long Leads, I2PAK, TO-262AA
SGP15N60XKSA1
IPP08CNE8NG
N-CHANNEL POWER MOSFET
Infineon Technologies
425
Marketplace
315 : 0,84702 €
Bulk
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
85 V
95A (Tc)
10V
6.4mOhm @ 95A, 10V
4V @ 130µA
99 nC @ 10 V
±20V
6690 pF @ 40 V
-
167W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3
TO-220-3
Showing
of 18

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.