Single FETs, MOSFETs

Results: 27
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Showing
of 27
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
1.127
In Stock
1 : 4,82000 €
Cut Tape (CT)
1.000 : 1,77292 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
8.1A (Tc)
15V, 18V
233.9mOhm @ 3A, 18V
5.1V @ 900µA
7.9 nC @ 18 V
+20V, -7V
290 pF @ 800 V
-
80W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
TO-247-3
G2R1000MT17D
SIC MOSFET N-CH 4A TO247-3
GeneSiC Semiconductor
6.477
In Stock
1 : 5,21000 €
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
5A (Tc)
20V
1.2Ohm @ 2A, 20V
5.5V @ 500µA
11 nC @ 20 V
+25V, -10V
111 pF @ 1000 V
-
44W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
PG-TO263-7-12
IMBG120R350M1HXTMA1
SICFET N-CH 1.2KV 4.7A TO263
Infineon Technologies
1.199
In Stock
1 : 5,24000 €
Cut Tape (CT)
1.000 : 1,97625 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
4.7A (Tc)
-
468mOhm @ 2A, 18V
5.7V @ 1mA
5.9 nC @ 18 V
+18V, -15V
196 pF @ 800 V
-
65W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
TO-247-3
G3R450MT17D
SIC MOSFET N-CH 9A TO247-3
GeneSiC Semiconductor
2.539
In Stock
1 : 6,90000 €
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
9A (Tc)
15V
585mOhm @ 4A, 15V
2.7V @ 2mA
18 nC @ 15 V
±15V
454 pF @ 1000 V
-
88W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
PG-TO263-7-12
IMBG120R140M1HXTMA1
SICFET N-CH 1.2KV 18A TO263
Infineon Technologies
726
In Stock
1 : 7,06000 €
Cut Tape (CT)
1.000 : 2,94418 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
18A (Tc)
-
189mOhm @ 6A, 18V
5.7V @ 2.5mA
13.4 nC @ 18 V
+18V, -15V
491 pF @ 800 V
-
107W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
TO-247-3
G3R75MT12D
SIC MOSFET N-CH 41A TO247-3
GeneSiC Semiconductor
2.280
In Stock
1 : 10,05000 €
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
41A (Tc)
15V
90mOhm @ 20A, 15V
2.69V @ 7.5mA
54 nC @ 15 V
+22V, -10V
1560 pF @ 800 V
-
207W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
TO-247-4 Top
G3R75MT12K
SIC MOSFET N-CH 41A TO247-4
GeneSiC Semiconductor
1.076
In Stock
1 : 10,31000 €
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
41A (Tc)
15V
90mOhm @ 20A, 15V
2.69V @ 7.5mA
54 nC @ 15 V
+22V, -10V
1560 pF @ 800 V
-
207W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4
TO-247-4
TO-247-3L
UJ4C075060K3S
SICFET N-CH 750V 28A TO247-3
onsemi
14.481
In Stock
1 : 10,51000 €
Tube
-
Tube
Active
N-Channel
SiCFET (Cascode SiCJFET)
750 V
28A (Tc)
-
74mOhm @ 20A, 12V
6V @ 10mA
37.8 nC @ 15 V
±20V
1422 pF @ 100 V
-
155W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
TO-247-3
NTHL040N120M3S
SIC MOS TO247-3L 40MOHM 1200V M3
onsemi
2.984
In Stock
103.950
Factory
1 : 10,54000 €
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
54A (Tc)
18V
54mOhm @ 20A, 18V
4.4V @ 10mA
75 nC @ 18 V
+22V, -10V
1700 pF @ 800 V
-
231W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
TO-247-3 HiP
SCT20N120
SICFET N-CH 1200V 20A HIP247
STMicroelectronics
614
In Stock
1 : 12,37000 €
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
20A (Tc)
20V
290mOhm @ 10A, 20V
3.5V @ 1mA
45 nC @ 20 V
+25V, -10V
650 pF @ 400 V
-
175W (Tc)
-55°C ~ 200°C (TJ)
-
-
Through Hole
HiP247™
TO-247-3
TO-247-4 Top
G3R40MT12K
SIC MOSFET N-CH 71A TO247-4
GeneSiC Semiconductor
1.958
In Stock
1 : 16,92000 €
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
71A (Tc)
15V
48mOhm @ 35A, 15V
2.69V @ 10mA
106 nC @ 15 V
±15V
2929 pF @ 800 V
-
333W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4
TO-247-4
TO-247-4 Top
G3R30MT12K
SIC MOSFET N-CH 90A TO247-4
GeneSiC Semiconductor
1.251
In Stock
1 : 21,57000 €
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
90A (Tc)
15V
36mOhm @ 50A, 15V
2.69V @ 12mA
155 nC @ 15 V
±15V
3901 pF @ 800 V
-
400W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4
TO-247-4
TO-247-4 Top
G3R12MT12K
1200V 12M TO-247-4 G3R SIC MOSFE
GeneSiC Semiconductor
683
In Stock
1 : 59,36000 €
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
157A (Tc)
15V, 18V
13mOhm @ 100A, 18V
2.7V @ 50mA
288 nC @ 15 V
+22V, -10V
9335 pF @ 800 V
-
567W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4
TO-247-4
IPW65R099CFD7AXKSA1
IMW120R220M1HXKSA1
SICFET N-CH 1.2KV 13A TO247-3
Infineon Technologies
958
In Stock
1 : 5,12000 €
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
13A (Tc)
15V, 18V
286mOhm @ 4A, 18V
5.7V @ 1.6mA
8.5 nC @ 18 V
+23V, -7V
289 pF @ 800 V
-
75W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-3-41
TO-247-3
IPW65R099CFD7AXKSA1
IMW120R140M1HXKSA1
SICFET N-CH 1.2KV 19A TO247-3
Infineon Technologies
167
In Stock
1 : 7,09000 €
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
19A (Tc)
15V, 18V
182mOhm @ 6A, 18V
5.7V @ 2.5mA
13 nC @ 18 V
+23V, -7V
454 pF @ 800 V
-
94W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-3-41
TO-247-3
TO-247-3L
UF3C120400K3S
SICFET N-CH 1200V 7.6A TO247-3
onsemi
231
In Stock
1 : 8,48000 €
Tube
-
Tube
Active
N-Channel
SiCFET (Cascode SiCJFET)
1200 V
7.6A (Tc)
12V
515mOhm @ 5A, 12V
6V @ 10mA
27 nC @ 15 V
±25V
740 pF @ 100 V
-
100W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
PG-TO247-4-1
IMZ120R090M1HXKSA1
SICFET N-CH 1.2KV 26A TO247-4
Infineon Technologies
207
In Stock
1 : 8,67000 €
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
26A (Tc)
15V, 18V
117mOhm @ 8.5A, 18V
5.7V @ 3.7mA
21 nC @ 18 V
+23V, -7V
707 pF @ 800 V
-
115W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-4-1
TO-247-4
C2D10120D
C3M0160120D
SICFET N-CH 1200V 17A TO247-3
Wolfspeed, Inc.
3.362
In Stock
1 : 9,11000 €
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
17A (Tc)
15V
208mOhm @ 8.5A, 15V
3.6V @ 2.33mA
38 nC @ 15 V
+15V, -4V
632 pF @ 1000 V
-
97W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
TO-247-3L
UF4C120070K3S
1200V/70MOHM, SIC, FAST CASCODE,
onsemi
625
In Stock
1 : 11,76000 €
Tube
-
Tube
Active
N-Channel
SiCFET (Cascode SiCJFET)
1200 V
27.5A (Tc)
-
91mOhm @ 20A, 12V
6V @ 10mA
37.8 nC @ 15 V
±20V
1370 pF @ 800 V
-
217W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
TO-247-3
STW12N120K5
MOSFET N-CH 1200V 12A TO247
STMicroelectronics
1.170
In Stock
1 : 8,44000 €
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
1200 V
12A (Tc)
10V
690mOhm @ 6A, 10V
5V @ 100µA
44.2 nC @ 10 V
±30V
1370 pF @ 100 V
-
250W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
TO-263-8
G3R160MT12J
SIC MOSFET N-CH 19A TO263-7
GeneSiC Semiconductor
415
In Stock
1 : 6,95000 €
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
19A (Tc)
15V
208mOhm @ 10A, 15V
2.7V @ 5mA (Typ)
23 nC @ 15 V
+20V, -10V
724 pF @ 800 V
-
128W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
TO-263-8
G3R60MT07J
750V 60M TO-263-7 G3R SIC MOSFET
GeneSiC Semiconductor
198
In Stock
1 : 10,24000 €
Tube
Tube
Active
-
SiCFET (Silicon Carbide)
750 V
-
-
-
-
-
+20V, -10V
-
-
-
-
-
-
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
TO-247-3
MSC180SMA120B
MOSFET 1200V 25A TO-247
Microchip Technology
99
In Stock
1 : 8,32000 €
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
1200 V
21A (Tc)
5V, 20V
225mOhm @ 8A, 20V
4.5V @ 500µA
36 nC @ 20 V
+23V, -10V
530 pF @ 1000 V
-
147W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
70
In Stock
1 : 11,77000 €
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
20A (Tc)
18V
182mOhm @ 10A, 18V
5V @ 1mA
24 nC @ 18 V
+25V, -10V
691 pF @ 800 V
-
107W (Tc)
175°C
-
-
Through Hole
TO-247
TO-247-3
IMW65R039M1HXKSA1
IMW65R083M1HXKSA1
SILICON CARBIDE MOSFET, PG-TO247
Infineon Technologies
15
In Stock
1 : 6,78000 €
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
24A (Tc)
18V
111mOhm @ 11.2A, 18V
5.7V @ 3.3mA
19 nC @ 18 V
+20V, -2V
624 pF @ 400 V
-
104W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-3-41
TO-247-3
Showing
of 27

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.