Single FETs, MOSFETs

Results: 3
Stocking Options
Environmental Options
Media
Marketplace Product
3Results

Showing
of 3
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
TL431BFDT-QR
2N7002P,215
MOSFET N-CH 60V 360MA TO236AB
Nexperia USA Inc.
478.119
In Stock
1 : 0,15000 €
Cut Tape (CT)
3.000 : 0,03027 €
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
60 V
360mA (Ta)
10V
1.6Ohm @ 500mA, 10V
2.4V @ 250µA
0.8 nC @ 4.5 V
±20V
50 pF @ 10 V
-
350mW (Ta)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
AO3422
AO3422
MOSFET N-CH 55V 2.1A SOT23-3
Alpha & Omega Semiconductor Inc.
583.837
In Stock
1 : 0,52000 €
Cut Tape (CT)
3.000 : 0,11465 €
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
55 V
2.1A (Ta)
2.5V, 4.5V
160mOhm @ 2.1A, 4.5V
2V @ 250µA
3.3 nC @ 4.5 V
±12V
300 pF @ 25 V
-
1.25W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3
3-SMD, SOT-23-3 Variant
SIS176LDN-T1-GE3
SIS472BDN-T1-GE3
MOSFET N-CH 30V 15.3A/38.3A PPAK
Vishay Siliconix
2.171
In Stock
1 : 0,87000 €
Cut Tape (CT)
3.000 : 0,20981 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
15.3A (Ta), 38.3A (Tc)
4.5V, 10V
7.5mOhm @ 10A, 10V
2.4V @ 250µA
21.5 nC @ 10 V
+20V, -16V
1000 pF @ 15 V
-
3.2W (Ta), 19.8W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PowerPAK® 1212-8
PowerPAK® 1212-8
Showing
of 3

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.