Single FETs, MOSFETs

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	Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
	RUM001L02T2CL MOSFET N-CH 20V 100MA VMT3 Rohm Semiconductor	24.389 In Stock	1 : 0,29000 € Cut Tape (CT) 8.000 : 0,03501 € Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	20 V	100mA (Ta)	1.2V, 4.5V	3.5Ohm @ 100mA, 4.5V	1V @ 100µA	±8V	7.1 pF @ 10 V	-	150mW (Ta)	150°C (TJ)	-	-	Surface Mount	VMT3	SOT-723
	SSM3J65CTC,L3F MOSFET P-CH 20V 700MA CST3C Toshiba Semiconductor and Storage	6.404 In Stock	1 : 0,38000 € Cut Tape (CT) 10.000 : 0,06916 € Tape & Reel (TR)	U-MOSVII	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	20 V	700mA (Ta)	1.2V, 4.5V	500mOhm @ 500mA, 4.5V	1V @ 1mA	±10V	48 pF @ 10 V	-	500mW (Ta)	150°C	-	-	Surface Mount	CST3C	SC-101, SOT-883

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.