18A (Ta) Single FETs, MOSFETs

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
MOSFET N-CH 30V 18A 8SO
Infineon Technologies
4.200
In Stock
1 : 0,89000 €
Cut Tape (CT)
4.000 : 0,20647 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
18A (Ta)
4.5V, 10V
4.8mOhm @ 18A, 10V
2.35V @ 50µA
26 nC @ 4.5 V
±20V
2315 pF @ 15 V
-
2.5W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
MOSFET N-CH 40V 18A 8SO
Infineon Technologies
7.382
In Stock
1 : 1,55000 €
Cut Tape (CT)
4.000 : 0,39530 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
18A (Ta)
4.5V, 10V
5mOhm @ 17A, 10V
2.25V @ 250µA
50 nC @ 4.5 V
±20V
4500 pF @ 20 V
-
2.5W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
10.000
In Stock
1 : 1,56000 €
Cut Tape (CT)
5.000 : 0,39406 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
150 V
18A (Ta)
10V
33mOhm @ 9A, 10V
4V @ 300µA
10.6 nC @ 10 V
±20V
1100 pF @ 75 V
-
1.6W (Ta), 57W (Tc)
150°C (TJ)
-
-
Surface Mount
8-SOP Advance (5x5)
8-PowerVDFN
eGaN Series
GANFET N-CH 100V 18A DIE
EPC
12.473
In Stock
1 : 2,94000 €
Cut Tape (CT)
2.500 : 0,93927 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
100 V
18A (Ta)
5V
16mOhm @ 11A, 5V
2.5V @ 3mA
4.5 nC @ 5 V
+6V, -4V
420 pF @ 50 V
-
-
-40°C ~ 150°C (TJ)
-
-
Surface Mount
Die
Die
EPC2212
GANFET N-CH 100V 18A DIE
EPC
94.891
In Stock
1 : 3,40000 €
Cut Tape (CT)
2.500 : 1,14440 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
100 V
18A (Ta)
5V
13.5mOhm @ 11A, 5V
2.5V @ 3mA
4 nC @ 5 V
+6V, -4V
407 pF @ 50 V
-
-
-40°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
Die
Die
FDS86242
MOSFET N-CH 60V 18A 8SOIC
onsemi
7.308
In Stock
1 : 3,70000 €
Cut Tape (CT)
2.500 : 1,28227 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
18A (Ta)
8V, 10V
4.5mOhm @ 18A, 10V
4V @ 250µA
90 nC @ 10 V
±20V
6410 pF @ 30 V
-
2.5W (Ta), 5W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
NJVMJD32CG
MOSFET N-CH 60V 18A DPAK
onsemi
3.300
In Stock
1 : 1,49000 €
Cut Tape (CT)
2.500 : 0,40973 €
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
18A (Ta)
5V
65mOhm @ 9A, 5V
2V @ 250µA
22 nC @ 5 V
±15V
675 pF @ 25 V
-
2.1W (Ta), 55W (Tj)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
FDS86242
MOSFET N-CH 40V 18A 8SOIC
onsemi
3.412
In Stock
20.000
Factory
1 : 1,70000 €
Cut Tape (CT)
2.500 : 0,47862 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
18A (Ta)
4.5V, 10V
4.3mOhm @ 18A, 10V
3V @ 250µA
86 nC @ 10 V
±20V
5680 pF @ 15 V
-
2.5W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
EPC2202
GANFET N-CH 80V 18A DIE
EPC
34.955
In Stock
1 : 3,33000 €
Cut Tape (CT)
2.500 : 1,11201 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
80 V
18A (Ta)
5V
17mOhm @ 11A, 5V
2.5V @ 3mA
4 nC @ 5 V
+5.75V, -4V
415 pF @ 50 V
-
-
-40°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
Die
Die
RXH070N03TB1
MOSFET P-CH 30V 18A 8SOP
Rohm Semiconductor
2.372
In Stock
1 : 2,98000 €
Cut Tape (CT)
2.500 : 0,95655 €
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
18A (Ta)
4.5V, 10V
5.4mOhm @ 18A, 10V
2.5V @ 5mA
160 nC @ 10 V
±20V
7200 pF @ 15 V
-
1.4W (Ta)
150°C (TJ)
-
-
Surface Mount
8-SOP
8-SOIC (0.154", 3.90mm Width)
344
In Stock
1 : 4,17000 €
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
650 V
18A (Ta)
10V
155mOhm @ 9A, 10V
4V @ 730µA
29 nC @ 10 V
±30V
1635 pF @ 300 V
-
150W (Tc)
150°C
-
-
Through Hole
TO-220
TO-220-3
8.783
In Stock
1 : 1,29000 €
Cut Tape (CT)
3.000 : 0,33887 €
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
30 V
18A (Ta)
4.5V, 10V
5.5mOhm @ 18A, 10V
2.5V @ 250µA
124 nC @ 10 V
±20V
7270 pF @ 15 V
-
3W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
4.938
In Stock
1 : 4,71000 €
Cut Tape (CT)
2.500 : 1,36099 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
650 V
18A (Ta)
10V
170mOhm @ 9A, 10V
4V @ 730µA
29 nC @ 10 V
±30V
1635 pF @ 300 V
-
150W (Tc)
150°C
-
-
Surface Mount
4-DFN-EP (8x8)
4-VSFN Exposed Pad
MJD44H11-1G
MOSFET N-CH 60V 18A IPAK
onsemi
0
In Stock
2.765
Marketplace
1.397 : 0,18137 €
Tube
-
Tube
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
60 V
18A (Ta)
10V
60mOhm @ 9A, 10V
4V @ 250µA
30 nC @ 10 V
±20V
710 pF @ 25 V
-
2.1W (Ta), 55W (Tj)
-55°C ~ 175°C (TJ)
-
-
Through Hole
IPAK
TO-251-3 Short Leads, IPAK, TO-251AA
AO4410
SOP-8 MOSFETS ROHS
UMW
2.677
In Stock
1 : 0,48000 €
Cut Tape (CT)
Cut Tape (CT)
Active
N-Channel
MOSFET (Metal Oxide)
30 V
18A (Ta)
4.5V, 10V
5.5mOhm @ 18A, 10V
1.5V @ 250µA
85 nC @ 10 V
±12V
10500 pF @ 15 V
-
3.1W (Ta)
150°C (TJ)
-
-
Surface Mount
8-SOP
8-SOIC (0.154", 3.90mm Width)
182.500
Marketplace
357 : 0,72552 €
Bulk
-
Bulk
Obsolete
N-Channel
MOSFET (Metal Oxide)
30 V
18A (Ta)
-
5.6mOhm @ 9A, 10V
-
16 nC @ 4.5 V
-
2440 pF @ 10 V
-
2W (Ta)
150°C (TJ)
-
-
Surface Mount
8-SOP
8-SOIC (0.154", 3.90mm Width)
INFINFIPAN60R360PFD7SXKSA1
FOR 60V MOTOR DRIVERS
Sanyo
30.739
Marketplace
271 : 0,95871 €
Bulk
-
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
60 V
18A (Ta)
-
55mOhm @ 9A, 10V
-
19 nC @ 10 V
-
775 pF @ 20 V
-
2W (Ta), 20W (Tc)
150°C (TJ)
-
-
Through Hole
TO-220ML
TO-220-3 Full Pack
L78L08A
MOSFET N-CH 30V 18A 8SOIC
UMW
3.000
In Stock
3.000 : 0,28685 €
Tape & Reel (TR)
*
Tape & Reel (TR)
Active
N-Channel
MOSFET (Metal Oxide)
30 V
18A (Ta)
4.5V, 10V
4.8mOhm @ 18A, 10V
2.35V @ 50µA
-
±20V
-
-
2.5W (Ta)
-55°C ~ 155°C (TJ)
-
-
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
210.000
Marketplace
158 : 1,64101 €
Bulk
-
Bulk
Obsolete
N-Channel
MOSFET (Metal Oxide)
20 V
18A (Ta)
-
5.8mOhm @ 18A, 10V
2.5V @ 1mA
16 nC @ 5 V
-
1800 pF @ 10 V
-
-
-
-
-
Surface Mount
8-DFN3333 (3.3x3.3)
8-VDFN Exposed Pad
INFINFIPAN60R360PFD7SXKSA1
MOSFET N-CH 60V 18A TO220AB
Renesas Electronics Corporation
1.523
Marketplace
152 : 1,71013 €
Bulk
-
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
60 V
18A (Ta)
-
65mOhm @ 9A, 10V
2V @ 1mA
-
±20V
1300 pF @ 10 V
-
60W (Tc)
150°C
-
-
Through Hole
TO-220AB
TO-220-3
FDS86242
MOSFET N-CH 30V 18A 8SOIC
onsemi
1.033
In Stock
1 : 2,29000 €
Cut Tape (CT)
Tape & Reel (TR)
Cut Tape (CT)
Obsolete
N-Channel
MOSFET (Metal Oxide)
30 V
18A (Ta)
4.5V, 10V
4.8mOhm @ 18A, 10V
3V @ 1mA
41 nC @ 10 V
±20V
2670 pF @ 15 V
-
2.5W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
8-SOIC
MOSFET N-CH 30V 18A 8SOIC
Fairchild Semiconductor
73.001
Marketplace
94 : 2,76383 €
Bulk
Bulk
Obsolete
N-Channel
MOSFET (Metal Oxide)
30 V
18A (Ta)
4.5V, 10V
4mOhm @ 18A, 10V
3V @ 250µA
48 nC @ 5 V
±20V
3845 pF @ 15 V
-
2.5W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
MOSFET N-CH 30V 18A 8SO
Infineon Technologies
0
In Stock
9.695
Marketplace
Discontinued at Digi-Key
Tube
Tube
Discontinued at Digi-Key
N-Channel
MOSFET (Metal Oxide)
30 V
18A (Ta)
4.5V, 10V
4.8mOhm @ 18A, 10V
2.35V @ 50µA
26 nC @ 4.5 V
±20V
2315 pF @ 15 V
-
2.5W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
AMR416N
MOSFET N-CH 100V 75A DFN5X6
Analog Power Inc.
3.300
Marketplace
1 : 1,01000 €
Bulk
-
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
100 V
18A (Ta)
4.5V, 10V
10mOhm @ 10A, 10V
1V @ 250µA
51 nC @ 4.5 V
±20V
7442 pF @ 15 V
-
5W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-DFN (5x6)
8-PowerVDFN
8-SOIC
SMALL SIGNAL FIELD-EFFECT TRANSI
Fairchild Semiconductor
360.713
Marketplace
209 : 1,24373 €
Bulk
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
30 V
18A (Ta)
4.5V, 10V
4.8mOhm @ 18A, 10V
3V @ 1mA
41 nC @ 10 V
±20V
2670 pF @ 15 V
-
2.5W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
Showing
of 76

Single FET, MOSFETs


Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

  • Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
  • Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

  1. High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
  2. Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
  3. High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.