101A (Ta) Single FETs, MOSFETs

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
EPC2302
EPC2302
TRANS GAN 100V DIE .0018OHM
EPC
951
In Stock
1 : 7,68000 €
Cut Tape (CT)
3.000 : 3,51330 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
100 V
101A (Ta)
5V
1.8mOhm @ 50A, 5V
2.5V @ 14mA
23 nC @ 5 V
+6V, -4V
3200 pF @ 50 V
-
-
-40°C ~ 150°C (TJ)
-
-
Surface Mount
7-QFN (3x5)
7-PowerWQFN
EPC2302
EPC2302ENGRT
TRANS GAN 100V DIE .0018OHM
EPC
0
In Stock
1 : 7,54000 €
Cut Tape (CT)
12.000 : 3,91296 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Obsolete
N-Channel
GaNFET (Gallium Nitride)
100 V
101A (Ta)
5V
1.8mOhm @ 50A, 5V
2.5V @ 14mA
23 nC @ 5 V
+6V, -4V
3200 pF @ 50 V
-
-
-40°C ~ 150°C (TJ)
-
-
Surface Mount
7-QFN (3x5)
7-PowerWQFN
Showing
of 2

101A (Ta) Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.