1.7A (Ta) Single FETs, MOSFETs

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of 68

Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
NTR5198NLT1G MOSFET N-CH 60V 1.7A SOT23-3 onsemi	47.667 In Stock	1 : 0,35000 € Cut Tape (CT) 3.000 : 0,07690 € Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	1.7A (Ta)	4.5V, 10V	155mOhm @ 1A, 10V	2.5V @ 250µA	2.8 nC @ 4.5 V	±20V	182 pF @ 25 V	-	900mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
AO7400 MOSFET N-CH 30V 1.7A SC70-3 Alpha & Omega Semiconductor Inc.	56.358 In Stock	1 : 0,45000 € Cut Tape (CT) 3.000 : 0,09987 € Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	30 V	1.7A (Ta)	2.5V, 10V	85mOhm @ 1.5A, 10V	1.4V @ 250µA	4.82 nC @ 4.5 V	±12V	390 pF @ 15 V	-	350mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SC-70-3	SC-70, SOT-323
FDN5630 MOSFET N-CH 60V 1.7A SUPERSOT3 onsemi	36.116 In Stock	1 : 0,50000 € Cut Tape (CT) 3.000 : 0,11366 € Tape & Reel (TR)	PowerTrench®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	1.7A (Ta)	6V, 10V	100mOhm @ 1.7A, 10V	3V @ 250µA	10 nC @ 10 V	±20V	400 pF @ 15 V	-	500mW (Ta)	-55°C ~ 155°C (TJ)	-	-	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
NVR5198NLT1G MOSFET N-CH 60V 1.7A SOT23-3 onsemi	1.283 In Stock	1 : 0,51000 € Cut Tape (CT) 3.000 : 0,11818 € Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	1.7A (Ta)	4.5V, 10V	155mOhm @ 1A, 10V	2.5V @ 250µA	5.1 nC @ 10 V	±20V	182 pF @ 25 V	-	900mW (Ta)	-55°C ~ 150°C (TJ)	Automotive	AEC-Q101	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
FDN335N MOSFET N-CH 20V 1.7A SUPERSOT3 onsemi	20.249 In Stock	1 : 0,60000 € Cut Tape (CT) 3.000 : 0,13851 € Tape & Reel (TR)	PowerTrench®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	20 V	1.7A (Ta)	2.5V, 4.5V	70mOhm @ 1.7A, 4.5V	1.5V @ 250µA	5 nC @ 4.5 V	±8V	310 pF @ 10 V	-	500mW (Ta)	-55°C ~ 155°C (TJ)	-	-	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
NDS355AN MOSFET N-CH 30V 1.7A SUPERSOT3 onsemi	67.157 In Stock	1 : 0,69000 € Cut Tape (CT) 3.000 : 0,16439 € Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	1.7A (Ta)	4.5V, 10V	85mOhm @ 1.9A, 10V	2V @ 250µA	5 nC @ 5 V	±20V	195 pF @ 15 V	-	500mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
FDN5632N-F085 MOSFET N-CH 60V 1.7A SUPERSOT3 onsemi	48.656 In Stock	1 : 0,88000 € Cut Tape (CT) 3.000 : 0,21716 € Tape & Reel (TR)	PowerTrench®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	1.7A (Ta)	4.5V, 10V	82mOhm @ 1.7A, 10V	3V @ 250µA	12 nC @ 10 V	±20V	475 pF @ 15 V	-	1.1W (Ta)	-55°C ~ 150°C (TJ)	Automotive	AEC-Q101	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
CSD25480F3T MOSFET P-CH 20V 1.7A 3PICOSTAR Texas Instruments	8.865 In Stock	1 : 1,14000 € Cut Tape (CT) 250 : 0,41076 € Tape & Reel (TR)	FemtoFET™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	20 V	1.7A (Ta)	1.8V, 8V	132mOhm @ 400mA, 8V	1.2V @ 250µA	0.91 nC @ 10 V	-12V	155 pF @ 10 V	-	500mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	3-PICOSTAR	3-XFDFN
EPC2203 GANFET N-CH 80V 1.7A DIE EPC	26.819 In Stock	1 : 1,24000 € Cut Tape (CT) 2.500 : 0,33296 € Tape & Reel (TR)	eGaN®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	GaNFET (Gallium Nitride)	80 V	1.7A (Ta)	5V	80mOhm @ 1A, 5V	2.5V @ 600µA	0.83 nC @ 5 V	+5.75V, -4V	88 pF @ 50 V	-	-	-40°C ~ 150°C (TJ)	Automotive	AEC-Q101	Surface Mount	Die	Die
NTF2955T1G MOSFET P-CH 60V 1.7A SOT223 onsemi	16.749 In Stock	1 : 1,44000 € Cut Tape (CT) 1.000 : 0,44296 € Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	60 V	1.7A (Ta)	10V	185mOhm @ 2.4A, 10V	4V @ 1mA	14.3 nC @ 10 V	±20V	492 pF @ 25 V	-	1W (Ta)	-55°C ~ 155°C (TJ)	-	-	Surface Mount	SOT-223 (TO-261)	TO-261-4, TO-261AA
EPC2070 TRANS GAN DIE 100V .022OHM EPC	2.380 In Stock	1 : 1,48000 € Cut Tape (CT) 2.500 : 0,40860 € Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	GaNFET (Gallium Nitride)	100 V	1.7A (Ta)	5V	23mOhm @ 3A, 5V	2.5V @ 1.5mA	2.5 nC @ 5 V	+6V, -4V	386 pF @ 50 V	-	-	-40°C ~ 150°C (TJ)	-	-	Surface Mount	Die	Die
EPC2051 GANFET N-CH 100V 1.7A DIE EPC	59.055 In Stock	1 : 1,57000 € Cut Tape (CT) 2.500 : 0,43832 € Tape & Reel (TR)	eGaN®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	GaNFET (Gallium Nitride)	100 V	1.7A (Ta)	5V	25mOhm @ 3A, 5V	2.5V @ 1.5mA	2.1 nC @ 5 V	+6V, -4V	258 pF @ 50 V	-	-	-40°C ~ 150°C (TJ)	-	-	Surface Mount	Die	Die
EPC2037 GANFET N-CH 100V 1.7A DIE EPC	1.283.591 In Stock	1 : 1,66000 € Cut Tape (CT) 2.500 : 0,46776 € Tape & Reel (TR)	eGaN®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	GaNFET (Gallium Nitride)	100 V	1.7A (Ta)	5V	550mOhm @ 100mA, 5V	2.5V @ 80µA	0.12 nC @ 5 V	+6V, -4V	14 pF @ 50 V	-	-	-40°C ~ 150°C (TJ)	-	-	Surface Mount	Die	Die
EPC2036 GANFET N-CH 100V 1.7A DIE EPC	30.570 In Stock	1 : 1,66000 € Cut Tape (CT) 2.500 : 0,46776 € Tape & Reel (TR)	eGaN®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	GaNFET (Gallium Nitride)	100 V	1.7A (Ta)	5V	65mOhm @ 1A, 5V	2.5V @ 600µA	0.91 nC @ 5 V	+6V, -4V	90 pF @ 50 V	-	-	-40°C ~ 150°C (TJ)	-	-	Surface Mount	Die	Die
EPC2035 GANFET N-CH 60V 1.7A DIE EPC	27.593 In Stock	1 : 1,66000 € Cut Tape (CT) 2.500 : 0,46776 € Tape & Reel (TR)	eGaN®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	GaNFET (Gallium Nitride)	60 V	1.7A (Ta)	5V	45mOhm @ 1A, 5V	2.5V @ 800µA	1.15 nC @ 5 V	+6V, -4V	115 pF @ 30 V	-	-	-40°C ~ 150°C (TJ)	-	-	Surface Mount	Die	Die
CSD25480F3 MOSFET P-CH 20V 1.7A 3PICOSTAR Texas Instruments	77.468 In Stock	1 : 0,29000 € Cut Tape (CT) 3.000 : 0,06009 € Tape & Reel (TR)	FemtoFET™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	20 V	1.7A (Ta)	1.8V, 8V	132mOhm @ 400mA, 8V	1.2V @ 250µA	0.91 nC @ 4.5 V	-12V	155 pF @ 10 V	-	500mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	3-PICOSTAR	3-XFDFN
ZXMN3B01FTA MOSFET N-CH 30V 1.7A SOT23-3 Diodes Incorporated	16.365 In Stock 390.000 Factory	1 : 0,69000 € Cut Tape (CT) 3.000 : 0,15881 € Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	1.7A (Ta)	2.5V, 4.5V	150mOhm @ 1.7A, 4.5V	700mV @ 250µA (Min)	2.93 nC @ 4.5 V	±12V	258 pF @ 15 V	-	625mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
ZXMN10A11GTA MOSFET N-CH 100V 1.7A SOT223 Diodes Incorporated	4.619 In Stock 89.000 Factory	1 : 0,97000 € Cut Tape (CT) 1.000 : 0,27148 € Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	100 V	1.7A (Ta)	6V, 10V	350mOhm @ 2.6A, 10V	4V @ 250µA	5.4 nC @ 10 V	±20V	274 pF @ 50 V	-	2W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-223-3	TO-261-4, TO-261AA
ZXMP6A13GTA MOSFET P-CH 60V 1.7A SOT223 Diodes Incorporated	2.988 In Stock	1 : 0,97000 € Cut Tape (CT) 1.000 : 0,27148 € Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	60 V	1.7A (Ta)	4.5V, 10V	390mOhm @ 900mA, 10V	1V @ 250µA	5.9 nC @ 10 V	±20V	219 pF @ 30 V	-	2W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-223-3	TO-261-4, TO-261AA
ZXM61N02FTC MOSFET N-CH 20V 1.7A SOT23-3 Diodes Incorporated	17.824 In Stock	1 : 0,71000 € Cut Tape (CT) 10.000 : 0,14251 € Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	20 V	1.7A (Ta)	2.7V, 4.5V	180mOhm @ 930mA, 4.5V	700mV @ 250µA (Min)	3.4 nC @ 4.5 V	±12V	160 pF @ 15 V	-	625mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
ZXMP10A17GTA MOSFET P-CH 100V 1.7A SOT223 Diodes Incorporated	1.931 In Stock 29.000 Factory	1 : 1,02000 € Cut Tape (CT) 1.000 : 0,28929 € Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	100 V	1.7A (Ta)	6V, 10V	350mOhm @ 1.4A, 10V	4V @ 250µA	10.7 nC @ 10 V	±20V	424 pF @ 50 V	-	2W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-223-3	TO-261-4, TO-261AA
SI4464DY-T1-GE3 MOSFET N-CH 200V 1.7A 8SO Vishay Siliconix	2.081 In Stock	1 : 1,94000 € Cut Tape (CT) 2.500 : 0,56430 € Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	200 V	1.7A (Ta)	6V, 10V	240mOhm @ 2.2A, 10V	4V @ 250µA	18 nC @ 10 V	±20V	-	-	1.5W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
SI7820DN-T1-GE3 MOSFET N-CH 200V 1.7A PPAK1212-8 Vishay Siliconix	10.988 In Stock	1 : 2,37000 € Cut Tape (CT) 3.000 : 0,70693 € Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	200 V	1.7A (Ta)	6V, 10V	240mOhm @ 2.6A, 10V	4V @ 250µA	18 nC @ 10 V	±20V	-	-	1.5W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PowerPAK® 1212-8	PowerPAK® 1212-8
SI7820DN-T1-E3 MOSFET N-CH 200V 1.7A PPAK1212-8 Vishay Siliconix	5.079 In Stock	1 : 2,37000 € Cut Tape (CT) 3.000 : 0,70693 € Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	200 V	1.7A (Ta)	6V, 10V	240mOhm @ 2.6A, 10V	4V @ 250µA	18 nC @ 10 V	±20V	-	-	1.5W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PowerPAK® 1212-8	PowerPAK® 1212-8
R6002ENHTB1 600V 1.7A SOP8, LOW-NOISE POWER Rohm Semiconductor	1.565 In Stock	1 : 1,46000 € Cut Tape (CT) 2.500 : 0,40263 € Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	600 V	1.7A (Ta)	10V	3.4Ohm @ 500mA, 10V	4V @ 1mA	6.5 nC @ 10 V	±20V	65 pF @ 25 V	-	2W (Ta)	150°C (TJ)	-	-	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)

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Single FET, MOSFETs

Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

n-channel MOSFETs: where electrons are the primary carriers.
p-channel MOSFETs: where holes are the primary carriers.

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.

Single FET, MOSFETs

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