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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
IGBT Type
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
MIW40N65-BP
MIW40N65-BP
IGBT 650V 40A TO-247
Micro Commercial Co
305
In Stock
1 : 4,26000 €
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Last Time BuyTrench Field Stop650 V80 A120 A2.4V @ 15V, 40A280 W3.3mJ (on), 1.4mJ (off)Standard165 nC62ns/265ns600V, 40A, 10Ohm, 15V41 ns-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247-3
MIW40N120-BP
MIW40N120-BP
IGBT 1200V 40A TO-247
Micro Commercial Co
0
In Stock
1.800 : 4,07356 €
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ActiveTrench Field Stop1200 V80 A160 A2.4V @ 15V, 40A277 W3.3mJ (on), 1.4mJ (off)Standard239 nC62ns/265ns600V, 40A, 10Ohm, 15V80 ns-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247-3
0
In Stock
1 : 4,93000 €
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ActiveTrench Field Stop650 V85 A200 A1.95V @ 15V, 50A326 W1.27mJ (on), 650µJ (off)Standard450 nC55ns/319ns300V, 50A, 10Ohm, 15V--40°C ~ 175°C (TJ)Through HoleTO-247-3TO-247AB
0
In Stock
1 : 5,59000 €
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Last Time BuyTrench Field Stop650 V80 A200 A1.9V @ 15V, 50A250 W1.59mJ (on), 1.34mJ (off)Standard186 nC69ns/404ns400V, 50A, 10Ohm, 15V88 ns-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247-3
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Transistors - IGBTs - Single


Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.