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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Technology
Configuration
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
eGaN Series
EPC2106
GANFET TRANS SYM 100V BUMPED DIE
EPC
99.317
In Stock
1 : 1,58000 €
Cut Tape (CT)
2.500 : 0,79472 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveGaNFET (Gallium Nitride)2 N-Channel (Half Bridge)-100V1.7A70mOhm @ 2A, 5V2.5V @ 600µA0.73nC @ 5V75pF @ 50V--40°C ~ 150°C (TJ)Surface MountDieDie
eGaN Series
EPC2104
GAN TRANS SYMMETRICAL HALF BRIDG
EPC
2.192
In Stock
1 : 8,00000 €
Cut Tape (CT)
500 : 5,70286 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveGaNFET (Gallium Nitride)2 N-Channel (Half Bridge)-100V23A6.3mOhm @ 20A, 5V2.5V @ 5.5mA7nC @ 5V800pF @ 50V--40°C ~ 150°C (TJ)Surface MountDieDie
eGaN Series
EPC2110
GANFET 2NCH 120V 3.4A DIE
EPC
15.015
In Stock
1 : 2,07000 €
Cut Tape (CT)
2.500 : 1,03597 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveGaNFET (Gallium Nitride)2 N-Channel (Dual) Common Source-120V3.4A60mOhm @ 4A, 5V2.5V @ 700µA0.8nC @ 5V80pF @ 60V--40°C ~ 150°C (TJ)-DieDie
eGaN Series
EPC2100
GAN TRANS ASYMMETRICAL HALF BRID
EPC
286
In Stock
1 : 5,77000 €
Cut Tape (CT)
500 : 3,79200 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveGaNFET (Gallium Nitride)2 N-Channel (Half Bridge)-30V10A (Ta), 40A (Ta)8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V2.5V @ 4mA, 2.5V @ 16mA4.9nC @ 15V, 19nC @ 15V475pF @ 15V, 1960pF @ 15V--40°C ~ 150°C (TJ)Surface MountDieDie
eGaN Series
EPC2101
GAN TRANS ASYMMETRICAL HALF BRID
EPC
161
In Stock
1 : 8,00000 €
Cut Tape (CT)
500 : 5,20694 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveGaNFET (Gallium Nitride)2 N-Channel (Half Bridge)-60V9.5A, 38A11.5mOhm @ 20A, 5V, 2.7mOhm @ 20A, 5V2.5V @ 3mA, 2.5V @ 12mA2.7nC @ 5V, 12nC @ 5V300pF @ 30V, 1200pF @ 30V--40°C ~ 150°C (TJ)Surface MountDieDie
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Transistors - FETs, MOSFETs - Arrays


Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.