Transistors - FETs, MOSFETs - Arrays

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Cut Tape (CT)Digi-Reel®Tape & Reel (TR)

Configuration

2 N-Channel (Dual) Common Source2 N-Channel (Half Bridge)

Drain to Source Voltage (Vdss)

30V60V100V120V

Current - Continuous Drain (Id) @ 25°C

1.7A3.4A9.5A, 38A10A (Ta), 40A (Ta)23A

Rds On (Max) @ Id, Vgs

6.3mOhm @ 20A, 5V8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V11.5mOhm @ 20A, 5V, 2.7mOhm @ 20A, 5V60mOhm @ 4A, 5V70mOhm @ 2A, 5V

Vgs(th) (Max) @ Id

2.5V @ 3mA, 2.5V @ 12mA2.5V @ 4mA, 2.5V @ 16mA2.5V @ 5.5mA2.5V @ 600µA2.5V @ 700µA

Gate Charge (Qg) (Max) @ Vgs

0.73nC @ 5V0.8nC @ 5V2.7nC @ 5V, 12nC @ 5V4.9nC @ 15V, 19nC @ 15V7nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds

75pF @ 50V80pF @ 60V300pF @ 30V, 1200pF @ 30V475pF @ 15V, 1960pF @ 15V800pF @ 50V

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	Technology	Configuration	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package

EPC2106 GANFET TRANS SYM 100V BUMPED DIE EPC	99.317 In Stock	1 : 1,58000 € Cut Tape (CT) 2.500 : 0,79472 € Tape & Reel (TR)	eGaN®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	GaNFET (Gallium Nitride)	2 N-Channel (Half Bridge)	-	100V	1.7A	70mOhm @ 2A, 5V	2.5V @ 600µA	0.73nC @ 5V	75pF @ 50V	-	-40°C ~ 150°C (TJ)	Surface Mount	Die	Die
EPC2104 GAN TRANS SYMMETRICAL HALF BRIDG EPC	2.192 In Stock	1 : 8,00000 € Cut Tape (CT) 500 : 5,70286 € Tape & Reel (TR)	eGaN®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	GaNFET (Gallium Nitride)	2 N-Channel (Half Bridge)	-	100V	23A	6.3mOhm @ 20A, 5V	2.5V @ 5.5mA	7nC @ 5V	800pF @ 50V	-	-40°C ~ 150°C (TJ)	Surface Mount	Die	Die
EPC2110 GANFET 2NCH 120V 3.4A DIE EPC	15.015 In Stock	1 : 2,07000 € Cut Tape (CT) 2.500 : 1,03597 € Tape & Reel (TR)	eGaN®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	GaNFET (Gallium Nitride)	2 N-Channel (Dual) Common Source	-	120V	3.4A	60mOhm @ 4A, 5V	2.5V @ 700µA	0.8nC @ 5V	80pF @ 60V	-	-40°C ~ 150°C (TJ)	-	Die	Die
EPC2100 GAN TRANS ASYMMETRICAL HALF BRID EPC	286 In Stock	1 : 5,77000 € Cut Tape (CT) 500 : 3,79200 € Tape & Reel (TR)	eGaN®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	GaNFET (Gallium Nitride)	2 N-Channel (Half Bridge)	-	30V	10A (Ta), 40A (Ta)	8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V	2.5V @ 4mA, 2.5V @ 16mA	4.9nC @ 15V, 19nC @ 15V	475pF @ 15V, 1960pF @ 15V	-	-40°C ~ 150°C (TJ)	Surface Mount	Die	Die
EPC2101 GAN TRANS ASYMMETRICAL HALF BRID EPC	161 In Stock	1 : 8,00000 € Cut Tape (CT) 500 : 5,20694 € Tape & Reel (TR)	eGaN®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	GaNFET (Gallium Nitride)	2 N-Channel (Half Bridge)	-	60V	9.5A, 38A	11.5mOhm @ 20A, 5V, 2.7mOhm @ 20A, 5V	2.5V @ 3mA, 2.5V @ 12mA	2.7nC @ 5V, 12nC @ 5V	300pF @ 30V, 1200pF @ 30V	-	-40°C ~ 150°C (TJ)	Surface Mount	Die	Die

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Transistors - FETs, MOSFETs - Arrays

Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.