Single FETs, MOSFETs

Results: 7
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Showing
of 7
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
EPC2054
EPC2054
TRANS GAN 200V DIE 43MOHM
EPC
58.941
In Stock
1 : 2,39000 €
Cut Tape (CT)
2.500 : 0,72755 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
200 V
3A (Ta)
5V
43mOhm @ 1A, 5V
2.5V @ 1mA
4.3 nC @ 5 V
+6V, -4V
573 pF @ 100 V
-
-
-40°C ~ 150°C (TJ)
-
-
Surface Mount
Die
Die
eGaN Series
EPC8010
GANFET N-CH 100V 4A DIE
EPC
8.386
In Stock
1 : 2,95000 €
Cut Tape (CT)
2.500 : 0,90944 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
100 V
4A (Ta)
5V
160mOhm @ 500mA, 5V
2.5V @ 250µA
0.48 nC @ 5 V
+6V, -4V
55 pF @ 50 V
-
-
-40°C ~ 150°C (TJ)
-
-
Surface Mount
Die
Die
EPC22xx
EPC2207
TRANS GAN 200V DIE .022OHM
EPC
19.805
In Stock
1 : 3,07000 €
Cut Tape (CT)
2.500 : 0,96315 €
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
200 V
14A (Ta)
5V
22mOhm @ 14A, 5V
2.5V @ 2mA
5.9 nC @ 5 V
+6V, -4V
600 pF @ 100 V
-
-
-40°C ~ 150°C (TJ)
-
-
Surface Mount
Die
Die
eGaN Series
EPC2045
GANFET N-CH 100V 16A DIE
EPC
29.865
In Stock
1 : 4,63000 €
Cut Tape (CT)
2.500 : 1,67528 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
N-Channel
GaNFET (Gallium Nitride)
100 V
16A (Ta)
5V
7mOhm @ 16A, 5V
2.5V @ 5mA
6.5 nC @ 5 V
+6V, -4V
685 pF @ 50 V
-
-
-40°C ~ 150°C (TJ)
-
-
Surface Mount
Die
Die
EPC2050
EPC2050
TRANS GAN BUMPED DIE
EPC
8.190
In Stock
1 : 6,44000 €
Cut Tape (CT)
2.500 : 2,60864 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
350 V
6.3A (Ta)
5V
180mOhm @ 6A, 5V
2.5V @ 1mA
4 nC @ 5 V
+6V, -4V
628 pF @ 280 V
-
-
-40°C ~ 150°C (TJ)
-
-
Surface Mount
Die
Die
eGaN Series
EPC2034C
GANFET N-CH 200V 48A DIE
EPC
20.528
In Stock
1 : 9,91000 €
Cut Tape (CT)
500 : 4,60700 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
N-Channel
GaNFET (Gallium Nitride)
200 V
48A (Ta)
5V
8mOhm @ 20A, 5V
2.5V @ 7mA
11 nC @ 5 V
+6V, -4V
1140 pF @ 100 V
-
-
-40°C ~ 150°C (TJ)
-
-
Surface Mount
Die
Die
EPC2308
EPC2308
TRANS GAN 150V .006OHM 7QFN
EPC
10.904
In Stock
1 : 5,00000 €
Cut Tape (CT)
3.000 : 1,85477 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
150 V
48A (Ta)
5V
6mOhm @ 15A, 5V
2.5V @ 5mA
13.8 nC @ 5 V
+6V, -4V
2103 pF @ 75 V
-
-
-40°C ~ 150°C (TJ)
-
-
Surface Mount
7-QFN (3x5)
7-PowerWQFN
Showing
of 7

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.