Single FETs, MOSFETs

Results: 3
Manufacturer
Diodes IncorporatedInfineon Technologies
Series
-HEXFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
30 V60 V100 V
Current - Continuous Drain (Id) @ 25°C
2.1A (Ta)6.2A (Ta)33A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 10V4.5V, 10V10V
Rds On (Max) @ Id, Vgs
25mOhm @ 4A, 10V44mOhm @ 16A, 10V250mOhm @ 1A, 10V
Vgs(th) (Max) @ Id
1.8V @ 250µA3V @ 250µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
9.7 nC @ 10 V18.4 nC @ 10 V71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
551 pF @ 30 V873 pF @ 15 V1960 pF @ 25 V
Power Dissipation (Max)
900mW (Ta)1.8W (Ta), 14W (Tc)130W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
SOT-223-3SOT-23-3TO-220AB
Package / Case
TO-220-3TO-236-3, SC-59, SOT-23-3TO-261-4, TO-261AA
Stocking Options
Environmental Options
Media
Marketplace Product
3Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
DMN3023L-7
MOSFET N-CH 30V 6.2A SOT23
Diodes Incorporated
200.658
In Stock
5.859.000
Factory
1 : 0,34000 €
Cut Tape (CT)
3.000 : 0,09167 €
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
6.2A (Ta)
2.5V, 10V
25mOhm @ 4A, 10V
1.8V @ 250µA
18.4 nC @ 10 V
±20V
873 pF @ 15 V
-
900mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
TO-220AB PKG
IRF540NPBF
MOSFET N-CH 100V 33A TO220AB
Infineon Technologies
135.299
In Stock
1 : 0,81000 €
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
100 V
33A (Tc)
10V
44mOhm @ 16A, 10V
4V @ 250µA
71 nC @ 10 V
±20V
1960 pF @ 25 V
-
130W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
SOT-223-3
DMP6250SE-13
MOSFET P-CH 60V 2.1A SOT223
Diodes Incorporated
5.787
In Stock
40.000
Factory
1 : 0,64000 €
Cut Tape (CT)
2.500 : 0,24404 €
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
2.1A (Ta)
4.5V, 10V
250mOhm @ 1A, 10V
3V @ 250µA
9.7 nC @ 10 V
±20V
551 pF @ 30 V
-
1.8W (Ta), 14W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223-3
TO-261-4, TO-261AA
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of 3

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.